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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Measurements of pulse-height defect in Au-Si detectors for H, He, C, N, O, Ne, Ar, Kr from about 2 to 400 keV/nucleon

We report measurements of pulse-height defects in Si surface-barrier detectors for a variety of ions and energies. We find: (1) for ions up to Ne our measurements agree remarkably well with calculations based on energy loss and nuclear defect theory, (2) for heavier ions we find systematic deviations, (3) there is no evidence of a dead layer at the Si-Au interface, and (4) our measurements are consistently reproducible for detectors fabricated in our laboratory.

Ipavich, F. M.↗
NASA NTRS1982

The effect of solute on the homogeneous crystal nucleation frequency in metallic melts

A complete calculation that extends the classical theory for crystal nucleation in pure melts to binary alloys has been made. Using a regular solution model, approximate expressions have been developed for the free energy change upon crystallization as a function of solute concentration. They are used, together with model-based estimates of the interfacial tension, to calculate the nucleation frequency. The predictions of the theory for the maximum attainable undercooling are compared with existing experimental results for non-glass forming alloys. The theory is also applied to several easy glass-forming alloys (Pd-Si, Au-Si, Fe-B) for qualitative comparison with the present experimental experience on the ease of glass formation, and for assessment of the potential for formation of the glass in bulk.

Thompson, C. V.↗
NASA NTRS1988

Observation of interface band structure by ballistic-electron-emission microscopy

The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.

Bell, L. D.↗
NASA NTRS1988

Spatially resolved ballistic electron spectroscopy of subsurface interfaces

Buried interfaces have traditionally been inaccessible to direct investigation by surface-sensitive techniques. A unique and novel electronic probe, which is sensitive to subsurface electronic structure, has been utilized to probe Schottky barrier interfaces. The method, ballistic electron emission microscopy (BEEM), is based on scanning tunnelling microscopy (STM) techniques. A theoretical treatment has been developed to describe the ballistic electron spectra obtained by BEEM and this treatment is applied to data obtained on the Au-Si Schottky barrier interface system. Excellent agreement between experiment and theory is obtained. In addition, the treatment predicts nanometer spatial resolution for interface imaging by BEEM.

Bell, L. D.↗
NASA NTRS1989

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗