Grating groove formation in au and au-ge alloys quarterly report no. 4
Grating groove formation in gold and gold- germanium alloy films - electron micrograph pictures and spectroscopic data
FILM↗
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Grating groove formation in au and au-ge alloys final report, 1964
Grating groove formation in aluminum and aluminum-germanium alloys
GERMANIUM ALLOY↗
Grating groove formation in Au and Au-Ge alloys. Surface polish effects on Au mirrors Final report, 1 Apr. - 30 Sep. 1965
Electron microscopy and vacuum ultraviolet reflectometry of mirror surfaces
ELECTRON MICROSCOPY↗
Effect of Undercooling and Modified Microstructure on the Physical Properties of Material Synthesized in the Drop Tube and Drop Tower
The effects of undercooling and modified microstructure on the physical properties of synthesized materials were investigated. The objectives of this program are: (1) to determine the possible existence of metastable phases and novel physical processes on material prepared in a microgravity environment; and (2) to investigate the feasibility of fabricating advanced electronic devices using material with microstructures obtainable in a microgravity environment. The specific alloys and compounds under study are Au-Ge and immiscible alloys Nb-Ge compounds, and Ga-Bi immiscible alloys, and Ba-Pb-Bi-O. The superconducting and normal state transport properties of the materials under different pressures and in different magnetic fields were determined. The simultaneous study on the physical properties and the microstructure of material will provide information about the potential applications of materials processed in a microgravity environment.
Chu, C. W.↗
Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy
Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.
Peng, C. K.↗