SEARCH · Engineering Papers

Results for “AsCl3”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

5 records

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Materials Data on AsCl3 by Materials Project

AsCl3 is Ammonia-like structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is zero-dimensional and consists of four trichloroarsine molecules. As3+ is bonded in a distorted trigonal non-coplanar geometry to three Cl1- atoms. All As–Cl bond lengths are 2.21 Å. There are three inequivalent Cl1- sites. In the first Cl1- site, Cl1- is bonded in a single-bond geometry to one As3+ atom. In the second Cl1- site, Cl1- is bonded in a single-bond geometry to one As3+ atom. In the third Cl1- site, Cl1- is bonded in a single-bond geometry to one As3+ atom.

36 MATERIALS SCIENCE↗

NASA NTRS1971

Epitaxial gallium arsenide wafers

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

Black, J. F.↗

NASA NTRS1982

High efficiency, low cost thin GaAs solar cells

The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

Fan, J. C. C.↗

NASA NTRS1983

Communications and logic systems at millimeter wave frequencies, summary

During the contract period an AsCl3 epitaxial system used to provide buffer layers for FET structures was constructed. A submicron lithographic processes using deep U.V. techniques was developed and, employing these techniques, a working .5 micron gate device was produced. In addition, the development of submicron mixer diodes continued. The gettering of substrates of a technique to improve the mobility of ionimplantated layers was investigated. The result of this experiment showed a correlation between improved hall mobilities and gettered substrates. Finally, several theoretical studies are reported.

Source record↗

DOE OSTI2025

Doping in Efficient Polycrystalline CdSeTe Solar Cells via AsCl 3 Vapor Annealing

Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. Here, in this study, we developed a vapor-based AsCl 3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl 3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl 3 . This approach has led to a long carrier lifetime of over 72 ns, V oc of 850 mV, and power conversion efficiency of ~18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.

14 SOLAR ENERGY↗