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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Fractional Quantum Anomalous Hall Effect

The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.

bilayer↗
DOE OSTI2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

FOS: Physical sciences↗
DOE OSTI2025

Enhancing anomalous Hall effect with suppressed ferromagnetism in the SrTiO 3 -confined bilayer heterostructure of ultrathin SrRuO 3 and SrIrO 3

Ferromagnetism is an essential ingredient for anomalous Hall effect. SrRuO 3 is a representative ferromagnetic oxide that exhibits anomalous Hall effect even down to the monolayer confinement limit. Paramagnetic metal SrIrO 3 , on the other hand, becomes an antiferromagnetic insulator when confined to a monolayer. Here, in this study, we show that, by forming a confined bilayer structure of SrRuO 3 and SrIrO 3 monolayers with SrTiO 3 spacers, the anomalous Hall effect is significantly enhanced while the ferromagnetism as well as the perpendicular magnetic anisotropy are suppressed. These effects originate from interfacial Ru–Ir hybridization that modifies the electronic structure in the vicinity of the Fermi level. Our work demonstrates that confined bilayer heterostructure is an useful design for exploring the synergistic combination of interfacial coupling and quantum confinement of complex oxides.

anomalous hall effect↗
DOE OSTI2024

Recent progress of MnBi 2 Te 4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi 2 Te 4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi 2 Te 4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi 2 Te 4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Furthermore, understanding how the breakdown of the QAHE occurs in MnBi 2 Te 4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi 2 Te 4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi 2 Te 4 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Giant coercivity and enhanced intrinsic anomalous Hall effect at vanishing magnetization in a compensated kagome ferrimagnet

Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a substantial magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet TbMn 6 Sn 6 has been reported to host a large intrinsic anomalous Hall effect. Here, we demonstrate that doping the Mn sites with Cr drives the system toward magnetic compensation. For nearly compensated compositions at low temperatures, giant coercive fields exceeding 14 T are observed. Additionally, Cr doping markedly enhances the intrinsic anomalous Hall effect, which can be attributed to a shift in the Fermi level. Our results extend the range of unique magnetic states observed in kagome materials, demonstrating that chemical doping is an effective strategy to tune and realize these states.

DeStefano, Jonathan M. [Univ. of Washington, Seatt↗
DOE OSTI2026

Intrinsic even-odd thickness-driven anomalous Hall effect in epitaxial MnBi2⁢Te4 thin films

We demonstrate precise control of magnetism in MnBi2⁢Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures, we minimize detrimental self-doping effects and accurately target integer-layer films. X-ray diffraction and reflectivity provide quantitative measures of film quality and thickness. When these macroscale probes of structure and thickness are integrated with magnetotransport measurements, a striking even-odd layer dependence of the anomalous Hall effect is revealed. Odd-layer films exhibit a large hysteresis up to the Néel temperature (∼25K), consistent with noncompensated antiferromagnetism, while even-layer films show minimal response, as expected for an antiferromagnet. The sign of the anomalous Hall effect exhibits a sign reversal for intrinsic magnetism versus magnetism associated with defects. This work identifies critical factors for inducing pure, noncompensated ferromagnetism and reveals the characteristics of the intrinsic anomalous Hall effect in MnBi2⁢Te4, which together is a step toward realizing the zero-field quantum anomalous Hall effect in topological materials.

Mallick, Deb [ORNL] (ORCID:000900005806411X)↗
DOE OSTI2025

Metallicity and anomalous Hall effect in epitaxially strained, atomically thin RuO 2 films

The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO 2 , a debated metallic altermagnetic candidate. Previously, AHE in RuO 2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully strained 2 nm TiO 2 /t nm RuO 2 /TiO 2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a noncompensated magnetic ground state and reconfigures magnetic ordering in RuO 2 (110) thin films. These findings establish ultrathin RuO 2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies.

MBE↗
DOE OSTI2025

Anomalous Hall effect emerging from field-induced Weyl nodes in SmAlSi

The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic Weyl semimetals. However, the AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has rarely been observed experimentally. Different mechanisms have been proposed to account for the emergence of the AHE from different types of magnetic order. Here, in this Letter, we propose a new model that explains the observed AHE in both the AFM and PM states of the noncentrosymmetric Weyl semimetal SmAlSi. The newly proposed mechanism is based on magnetic-field-induced Weyl node evolution, which qualitatively explains the temperature dependence of the anomalous Hall conductivity, which displays unconventional power-law behavior in both the AFM and PM states of SmAlSi.

Gao, Yuxiang [Rice University, Houston, TX (United↗
DOE OSTI2024

Tunable Anomalous Hall Effect in a Kagomé Ferromagnetic Weyl Semimetal

Emerging from the intricate interplay of topology and magnetism, the giant anomalous Hall effect (AHE) is the most known topological property of the recently discovered kagomé ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 with the magnetic Co atoms arranged on a kagomé lattice. Here it is reported that the AHE in Co 3 Sn 2 S 2 can be fine-tuned by an applied magnetic field orientated within ≈2° of the kagomé plane, while beyond this regime, it stays unchanged. Particularly, it can vanish in magnetic fields parallel to the kagomé plane and even decrease in magnetic fields collinear with the spin direction. This tunable AHE can be attributed to local spin switching enabled by the geometrical frustration of the magnetic kagomé lattice, revealing that spins in a kagomé ferromagnet change their switching behavior as the magnetic field approaches the kagomé plane. Furthermore, these results also suggest a versatile way to tune the properties of a kagomé magnet.

anomalous Hall effect↗
DOE OSTI2025

Anomalous Hall effect in the polar magnet Gd 3 ⁢Ni 8 ⁢Sn 4 : A candidate for hosting skyrmions

While recent theoretical studies have positioned noncollinear polar magnets with C nv symmetry as compelling candidates for realizing topological magnetic phases and substantial intrinsic anomalous Hall conductivity, experimental realizations of the same in strongly correlated systems remain rare. Here, we present a large intrinsic anomalous Hall effect and extended topological magnetic ordering in Gd 3 ⁢Ni 8 ⁢Sn 4 with hexagonal C 6v symmetry. Observation of topological Hall response, corroborated by metamagnetic anomalies in isothermal magnetization, peak/hump features in field-evolution of ac susceptibility and longitudinal resistivity suggest the signature of topological magnetic phases. The anomalous Hall effect is quantitatively accounted for by the intrinsic Berry curvature-mediated mechanism. Finally, our results underscore polar magnets as a promising platform to investigate a plethora of emergent electrodynamic responses rooted in the interplay between magnetism and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unconventional Anomalous Hall Effect in Hexagonal Polar Magnet Y 3 Co 8 Sn 4

A rare realization of unconventional anomalous Hall effect (UAHE) both below and above the magnetic transition temperature (T C ) in a hexagonal noncentrosymmetric magnet Y 3 Co 8 Sn 4 , using a combined experimental and ab initio calculations. Occurrence of such UAHE is mainly attributed to the reciprocal ($\mathscr{KS}$) topology (i.e., the presence of topological Weyl points at/near the Fermi level), along with some contribution from the topological magnetic texture (at low temperatures), as inferred from the measured field-dependent ac susceptibility. The effect of UAHE on the measured transport behavior however evolves differently with temperature above and below T C = 53 K, suggesting different physical mechanism responsible in the two phases. A unique planar ferrimagnetic ordering is found to be the most stable state with ab-plane as the easy plane below T C . The simulated net magnetization and the moment per Co atom agrees fairly well with the experimentally measured values. A reasonably large anomalous Hall conductivity (AHC) is also observed in both the phases (above and below T C ) of the present compound, which is again not so ubiquitous. In conclusion, the results underscore the family of R 3 Co 8 Sn 4 (R = rare earth) polar magnets as a compelling backdrop for exploring the synergy of magnetism and topological non-trivial electronic states, pivotal for spintronic applications.

Density functional theory calculations↗
DOE OSTI2025

Interface magnetism and anomalous Hall effect in La 0.7 ⁢Sr 0.3⁢ Mn⁢O 3 /SrIr⁢O 3 bilayers

Epitaxial interfaces combining 3d and 5d transition metal oxides are a fertile playground to examine the interplay between topology and electron correlations. In this work, we explore magnetism and transport of bilayers combining ferromagnetic La 0.7⁢ Sr 0.3⁢ Mn⁢O 3 and the strong spin-orbit coupling material SrIr⁢O 3 . We have found an interfacial magnetic proximity effect driving an intrinsic contribution to the anomalous Hall effect of topological origin. The interfacial proximity interaction is enabled by the Mn-O-Ir bonding reconstruction and depends on layer sequence. While bilayers with the La 0.7⁢ Sr 0.3 ⁢Mn⁢O 3 on top featuring a robust Mn magnetism at the interface show the intrinsic AHE contribution, it is absent in bilayers with the inverted layer sequence (SrIr⁢O 3 layer on top) showing strongly suppressed magnetism at the interface. These results illustrate the leading role of interfacial atomic reconstructions on the interplay between topology and correlations at 3d/5d oxide interfaces. This finding may be of interest in future oxide topological spintronics and spin-orbitronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-temperature anomalous Hall effect driven by frustrated spin fluctuations in the antiferromagnetic delafossite metal PdCrO 2

Metallic delafossite oxides are of exceptional interest due to their ultraclean metallic transport. In the case of PdCrO 2 , this arises in a triangular-lattice antiferromagnet, creating a unique opportunity to study frustrated magnetism in a very clean metal. Here, we combine a chemical vapor transport crystal growth approach with magnetic, thermodynamic, magnetotransport, and neutron scattering measurements to elucidate the striking anomalous Hall effect (AHE) in antiferromagnetic PdCrO 2 . The unconventional AHE (with anomalous Hall conductivity ~10 5 Ω −1 cm −1 ) and a large positive magnetoresistance effect (>1,000%) are shown to exhibit complex temperature dependencies, persisting to almost seven times the Néel temperature (~250 K). These effects are directly compared to elastic neutron scattering, inelastic neutron scattering, and neutron magnetic pair distribution function data, establishing unambiguous links between anomalous magnetotransport properties and directly probed short-range spin fluctuations. The latter occur over a notably broad temperature range due to geometrical magnetic frustration. Connecting to recent experimental and theoretical developments, these findings are discussed in terms of a temperature-dependent interplay between chiral spin order and chiral spin fluctuations, significantly elucidating the high-temperature anomalous magnetotransport in such compounds.

anomalous Hall effect↗
DOE OSTI2025

Diverse magnetic phase diagram and anomalous Hall effect in antiferromagnetic LuMn 6⁢ Sn 6

The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is observed in certain antiferromagnets with noncollinear spin textures and nonvanishing Berry curvature. In this work, we present a rich temperature and magnetic phase diagram with eight distinct magnetic phases for the antiferromagnetic kagome compound LuMn 6 Sn 6 . The Hall effect analysis in LuMn 6 Sn 6 reveals both intriguing physical phenomena and methodological challenges. In the coplanar canted antiferromagnetic phase, we observe an AHE, which likely originates from the intrinsic effects. At low temperatures, upon entering the ferromagnetic phase, the AHE sharply increases and exceeds the conventional limits expected from intrinsic mechanisms. We also demonstrate the limitations of standard experimental methods in extracting the topological contribution to the Hall effect data. In particular, we show that accounting for magnetoresistance anisotropy helps reduce spurious contribution that can mimic topological Hall signals, although it does not fully resolve it. Furthermore, these shortcomings in current approaches in partitioning the Hall response necessitate new tools to interpret transport results in complex magnetic materials such as LuMn 6 Sn 6 .

Anomalous Hall effect↗
DOE OSTI2024

Unconventional Anomalous Hall Effect Driven by Self‐Intercalation in Covalent 2D Magnet Cr 2 Te 3

Covalent 2D magnets such as Cr 2 Te 3 , which feature self-intercalated magnetic cations located between monolayers of transition-metal dichalcogenide material, offer a unique platform for controlling magnetic order and spin texture, enabling new potential applications for spintronic devices. Here, it is demonstrated that the unconventional anomalous Hall effect (AHE) in Cr 2 Te 3 , characterized by additional humps and dips near the coercive field in AHE hysteresis, originates from an intrinsic mechanism dictated by the self-intercalation. This mechanism is distinctly different from previously proposed mechanisms such as topological Hall effect, or two-channel AHE arising from spatial inhomogeneities. Crucially, multiple Weyl-like nodes emerge in the electronic band structure due to strong spin-orbit coupling, whose positions relative to the Fermi level is sensitively modulated by the canting angles of the self-intercalated Cr cations. These nodes contribute strongly to the Berry curvature and AHE conductivity. This component competes with the contribution from bands that are less affected by the self-intercalation, resulting in a sign change in AHE with temperature and the emergence of additional humps and dips. The findings provide compelling evidence for the intrinsic origin of the unconventional AHE in Cr 2 Te 3 and further establish self-intercalation as a control knob for engineering AHE in complex magnets.

2D magnets↗
DOE OSTI2025

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn 2 PdIn

Noncollinear magnets with near-zero net magnetization and nontrivial bulk electronic topology hold significant promise for spintronic applications, though their scarcity necessitates deliberate design strategies. In this work, a topologically nontrivial electronic structure is reported in metallic Mn 2 PdIn, which crystallizes in the inverse Heusler structure and exhibits a spin-glassy ground state with quenched magnetization. The system features Weyl-type band crossings near the Fermi level and reveals a novel interplay among momentum-space nesting, orbital hybridization, and spin-orbit coupling. Comprehensive magnetotransport measurements reveal a pronounced anomalous Hall effect (AHE) in Mn 2 PdIn. The observed quadratic relationship between the longitudinal and anomalous Hall resistivities highlights the dominance of the intrinsic Berry curvature contribution to the AHE. These findings establish inverse Heusler alloys as compelling platforms for realizing noncollinear magnets that host Weyl-type semimetallic or metallic phases-combining suppressed magnetization with robust electronic transport-thereby offering a promising route toward their seamless integration into next-generation spintronic devices.

Ahmed, Afsar [Saha Institute of Nuclear Physics, K↗
DOE OSTI2025

Tunable superconductivity coexisting with the anomalous Hall effect in a transition metal dichalcogenide

Transition metal dichalcogenides display a high technological potential due to their wide range of electronic ground states. Here, we unveil that by tuning hydrostatic pressure P, a cascade of electronic phase transitions can be induced in the few-layer transition metal dichalcogenide 1 T ’-WS 2 . As P increases, we observe the suppression of superconductivity with the concomitant emergence of an anomalous Hall effect (AHE) at P ≈ 1.15 GPa. Above 1.6 GPa, we uncover a reentrant superconducting state emerging from a state still exhibiting AHE. This superconducting state competes with the AHE state and shows a marked increase in superconducting anisotropy with respect to the ambient pressure phase, suggesting a distinct pairing symmetry. We demonstrate that 1 T ’-WS 2 concomitantly transitions into a strong topological phase with different band orbital characters and Fermi surfaces contributing to the superconductivity. These findings position 1T’-WS 2 as a tunable superconductor, wherein superconductivity, AHE, and band features can be tuned reversibly.

Superconducting properties and materials↗