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Materials Data on AgP2 by Materials Project

AgP2 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ag2+ is bonded in a 4-coordinate geometry to four P1- atoms. There are a spread of Ag–P bond distances ranging from 2.52–2.69 Å. There are two inequivalent P1- sites. In the first P1- site, P1- is bonded to three equivalent Ag2+ and two equivalent P1- atoms to form distorted PAg3P2 trigonal bipyramids that share corners with five equivalent PAgP3 tetrahedra, corners with six equivalent PAg3P2 trigonal bipyramids, and an edgeedge with one PAg3P2 trigonal bipyramid. There are one shorter (2.21 Å) and one longer (2.22 Å) P–P bond lengths. In the second P1- site, P1- is bonded to one Ag2+ and three P1- atoms to form PAgP3 tetrahedra that share corners with two equivalent PAgP3 tetrahedra and corners with five equivalent PAg3P2 trigonal bipyramids. The P–P bond length is 2.26 Å.

36 MATERIALS SCIENCE↗

Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

Weizer, Victor G.↗

Sinterless Formation Of Contacts On Indium Phosphide

Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

Weizer, Victor G.↗

Serial-femtosecond crystallography reveals how a phytochrome variant couples chromophore and protein structural changes

The photoreaction and commensurate structural changes of a chromophore within biological photoreceptors elicit conformational transitions of the protein promoting the switch between deactivated and activated states. We investigated how this coupling is achieved in a bacterial phytochrome variant, Agp2-PAiRFP2. Contrary to classical protein crystallography, which only allows probing (cryo-trapped) stable states, we have used time-resolved serial femtosecond x-ray crystallography (tr-SFX) and pump-probe techniques with various illumination and delay times with respect to photoexcitation of the parent Pfr state. Thus, structural data for seven time frames were sorted into groups of molecular events along the reaction coordinate. They range from chromophore isomerization to the formation of Meta-F, the intermediate that precedes the functional relevant secondary structure transition of the tongue. Structural data for the early events were used to calculate the photoisomerization pathway to complement the experimental data. Late events allow identifying the molecular switch that is linked to the intramolecular proton transfer as a prerequisite for the following structural transitions.

59 BASIC BIOLOGICAL SCIENCES↗