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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Na Diffusion and Device Performance of AgBr Treated CuGaSe 2 Thin Films

Previous work demonstrated that uniform CuGaSe2 (CGS) thin films with large grains could be grown using a short AgBr vapor treatment during growth. Here, devices made with this treated CGS showed better performance compared to devices made with standard material. Here, it is shown that AgBr treated CGS device performance worsens over time and is attributed to the suppression of Na diffusion. A NaF post-deposition treatment is shown to effectively introduce Na into the AgBr treated CGS film and prevent device degradation.

14 SOLAR ENERGY↗
DOE OSTI2022

Grain Enhancement in Polycrystalline CuGaSe 2 by AgBr Vapor Treatment

Copper Gallium diselenide (CuGaSe 2 or CGS) thin film were deposited using a three-stage thermal co-evaporation process on molybdenum coated soda lime glass. Recrystallization was carried after the second stage by flashing AgBr for 2 mins. The change in morphology, structure and depth profile were studied after the treatment. SEM and XRD showed an increase in grain size and enhanced crystallinity. Here, a decrease in sodium profile after the treatment was observed through SIMS measurements. Overall, AgBr treatment of CGS seems to be promising for the improvement of film quality, which could help with enhanced device fabrication in the future.

14 SOLAR ENERGY↗
DOE OSTI2022

Homogeneous CuGaSe 2 growth by the CuPRO process with In-Situ AgBr treatment

Homogeneous CuGaSe 2 thin film growth is limited by slow kinetics of formation. A modified growth process was previously developed to address this issue but requires two separate long, high temperature anneals. Here, we demonstrate that a short AgBr treatment can replace this modified growth process. The AgBr works as a transport agent to catalyze CuGaSe 2 formation and atomic mobility. Furthermore, this treatment results in large grains with homogeneous composition through the bulk. Solar cells made with this material show better performance.

14 SOLAR ENERGY↗
DOE OSTI2022

High-Rate and Low-Temperature Fabrication of Cu(In,Ga)Se 2 Solar Cells Using AgBr Induced Recrystallization

We present results demonstrating a three-stage, high-rate, low-temperature deposition process for Cu(In,Ga)Se 2 solar cells including a recrystallization step after the second stage, catalyzed by AgBr. The entire deposition and recrystallization process takes place below 450 °C in less than 15 min. Device results with efficiencies exceeding 16% are shown. Here, we achieve very high levels of grain growth and a greater than a 5% absolute increase in device performance because of the recrystallization step relative to an identical process not involving AgBr.

14 SOLAR ENERGY↗
DOE OSTI2020

Materials Data on AgBr by Materials Project

AgBr is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Ag1+ is bonded to six equivalent Br1- atoms to form a mixture of corner and edge-sharing AgBr6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Ag–Br bond lengths are 2.93 Å. Br1- is bonded to six equivalent Ag1+ atoms to form a mixture of corner and edge-sharing BrAg6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AgBr by Materials Project

AgBr is Halite, Rock Salt-like structured and crystallizes in the monoclinic P2_1/m space group. The structure is three-dimensional. Ag1+ is bonded to six equivalent Br1- atoms to form a mixture of corner and edge-sharing AgBr6 octahedra. The corner-sharing octahedra tilt angles range from 4–11°. There are a spread of Ag–Br bond distances ranging from 2.88–2.97 Å. Br1- is bonded to six equivalent Ag1+ atoms to form a mixture of corner and edge-sharing BrAg6 octahedra. The corner-sharing octahedra tilt angles range from 4–11°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AgBr by Materials Project

AgBr is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Ag1+ is bonded in a body-centered cubic geometry to eight equivalent Br1- atoms. All Ag–Br bond lengths are 3.12 Å. Br1- is bonded in a body-centered cubic geometry to eight equivalent Ag1+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Epitaxial Electrodeposition of Wide Bandgap Cuprous Bromide on Silver via a Silver Bromide Buffer Layer

Cuprous halides are an important class of wide bandgap p-type semiconductors used in opto-electronics. Cuprous bromide (CuBr) shows potential for short-wavelength devices due to a large exciton binding energy (108 meV) and near-ultraviolet bandgap (3.1 eV). However, the growth of high-quality epitaxial CuBr films by electrodeposition has remained a challenge. Here, we introduce a low-cost electrochemical procedure for producing epitaxial CuBr(111) on a Ag(111) substrate by a [111]-oriented silver bromide (AgBr) buffer layer. The AgBr buffer layer forms during the electrodeposition of the CuBr. The mismatch between CuBr(111) and AgBr(111) is –1.3%. A plausible mechanism for nucleation and growth of the epitaxial CuBr is proposed. X-ray techniques including high resolution X-ray diffraction and X-ray pole figures are used to determine the epitaxial relationship. CuBr(100) is also produced on a Ag(100) surface by a AgBr(100) buffer layer that is rotated in-plane 45° relative to the Ag(100) surface. In conclusion, this in-plane rotation reduces the lattice mismatch from +39.5% for an unrotated film to –1.4% for a 45° rotated film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗
DOE OSTI2022

Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 ºC to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Altogether, AgBr seems to be a suitable transport agent and beneficial for device fabrication.

14 SOLAR ENERGY↗
DOE OSTI2020

Metal Halide Scintillators with Fast and Self‐Absorption‐Free Defect‐Bound Excitonic Radioluminescence for Dynamic X‐Ray Imaging

Abstract Scintillators for radiation detection are of great significance in medical imaging, security, and nondestructive inspection. The current challenge for scintillators is to simultaneously achieve high scintillation light yield, fast radioluminescence, simple film fabrication, large X‐ray attenuation efficiency as well as stable and nontoxic compositions; no previous scintillators fulfill all the above requirements. Here, metal halide Rb 2 AgBr 3 , possessing defect‐bound excitonic radioluminescence, is shown as efficient and fast scintillators. This nontoxic and stable scintillator emits from excitons bound to neutral bromine vacancies, enjoying an efficient and spin‐allowed fast emission with minimized self‐absorption. Rb 2 AgBr 3 thus has a high light yield (25 600 photons MeV −1 ), fast scintillation decay time (5.31 ns), and a record value of light yield versus decay time (4821 photons MeV −1 ns −1 ). The close‐space sublimation method is developed for fast and scalable fabrication of oriented Rb 2 AgBr 3 films. The scintillator film is further integrated with commercial flat‐panel imagers, and the spatial resolution reaches 10.2 line pairs per millimeter at the modulation transfer function of 0.2, doubling the resolution of conventional CsI:Tl flat‐panel detectors. The dynamic X‐ray imaging and its use to real‐time monitoring of bone movement without ghosting effect is also demonstrated.

Zhang, Muyi↗
NASA NTRS1980

Fast ion transport in silver halide solid solutions and multiphase systems

The incorporation of homovalent ions, e.g., I(-) in AgBr, leads to a substantial increase in ionic conductivity sigma. The charge compensation concept does not explain the enhancement. AgBr + 30 mol. % AgI exhibits sigma approximately 7/omega/cm at 380 C, which is approximately 170% larger than that of alpha-AgI, the best known superionic conductor, at its melting point. The purely elastic displacement caused by the foreign ion is suggested to be the origin of such a unique behavior. Furthermore, AgI-AgBr two-phase systems display sigma approximately 10 to the 3rd times higher than predicted by the classical theories.

Shahi, K.↗
DOE OSTI2022

Post-deposition Metal Halide Treatment of CuGaSe 2 for Photovoltaic Application

Copper gallium diselenide (CGS) semiconductor thin films were deposited by three-stage thermal co-evaporation process. Post-deposition treatments and recrystallization were performed at various AgBr doses of 40 mg, 60 mg, and 80 mg after the 2 nd stage. The changes in surface morphology were confirmed by SEM. The electrical properties were also modified, as the resistivity of the film decreases with increasing doses. Here, the device performance after the treatment did not change as expected, as the overall device performance only slightly increases in the case of 60 mg of AgBr. Substantial changes in the fabrication process will therefore be required for better device results.

14 SOLAR ENERGY↗
DOE OSTI2023

Revisiting two thiophosphate compounds constituting d 0 transition metal HfP 2 S 6 and d 10 transition metal α-Ag 4 P 2 S 6 as multifunctional materials for combining second harmonic generation response and photocurrent response

Two acentric thiophosphate compounds, HfP 2 S 6 and α-Ag 4 P 2 S 6 , are revisited and studied as infrared nonlinear optical materials. HfP 2 S 6 and α-Ag 4 P 2 S 6 were structurally characterized without any property measurements. Here, in this work, HfP 2 S 6 and α-Ag 4 P 2 S 6 were synthesized via high temperature salt flux reactions. Low-temperature polymorph acentric α-Ag 4 P 2 S 6 was purified and grown as mm-sized crystals with the aid of AgBr flux. The AgBr flux was revealed to play an important role in stabilizing the acentric α-Ag 4 P 2 S 6 . The acentric α-Ag 4 P 2 S 6 transforms to centrosymmetric β-Ag 4 P 2 S 6 at 850(5) K, which is revealed by differential scanning calorimetry (DSC) analysis and powder X-ray diffraction experiments. HfP 2 S 6 and α-Ag 4 P 2 S 6 are discovered by UV-vis spectrum measurements as indirect bandgap semiconductors with bandgaps of 2.2(1) eV and 2.5(1) eV, respectively, which is supported by DFT calculations and TB-LMTO-ASA calculations. The bonding pictures of α-Ag 4 P 2 S 6 were studied by crystal orbital Hamilton population calculations (COHP) coupled with electron localization function (ELF) analysis. DFT calculations predict that HfP 2 S 6 and α-Ag 4 P 2 S 6 would exhibit different optical performances regardless of being constructed from identical [P 2 S 6 ] motifs. HfP 2 S 6 exhibits a low second harmonic generation (SHG) response, ~0.21 × AGS (for the sample of particle size of 25 μm). α-Ag 4 P 2 S 6 possesses moderate SHG response, ~0.61 × AGS (for the sample of particle size of 225 μm) coupled with a high laser damage threshold (LDT) of ~3.2 × AGS. Characteristics of high ambient stability, moderate bandgap and SHG response, type-I phase-matching capability, and high LDT together with the easy growth of large crystals make α-Ag 4 P 2 S 6 attractive for future infrared nonlinear optical applications. Photocurrent measurements found that α-Ag 4 P 2 S 6 and β-Ag 4 P 2 S 6 have high photocurrent response, 165 nA cm -2 and 135 nA cm -2 , respectively. α-Ag 4 P 2 S 6 is a new multifunctional material of the ternary Ag–P–S system, which combines nonlinear optical (NLO) properties and photocurrent response.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Materials Data on AgPbBrO by Materials Project

AgBrPbO crystallizes in the tetragonal P4/nmm space group. The structure is two-dimensional and consists of one AgBr sheet oriented in the (0, 0, 1) direction and one PbO sheet oriented in the (0, 0, 1) direction. In the AgBr sheet, Ag1+ is bonded to five equivalent Br1- atoms to form a mixture of corner and edge-sharing AgBr5 square pyramids. There are four shorter (2.86 Å) and one longer (2.94 Å) Ag–Br bond lengths. Br1- is bonded to five equivalent Ag1+ atoms to form a mixture of corner and edge-sharing BrAg5 square pyramids. In the PbO sheet, Pb2+ is bonded in a 4-coordinate geometry to four equivalent O2- atoms. All Pb–O bond lengths are 2.35 Å. O2- is bonded to four equivalent Pb2+ atoms to form a mixture of corner and edge-sharing OPb4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AgBrO2 by Materials Project

AgBrO2 crystallizes in the monoclinic P2_1/m space group. The structure is two-dimensional and consists of two hydrogen peroxide molecules and one AgBr sheet oriented in the (0, 0, 1) direction. In the AgBr sheet, Ag is bonded in a 5-coordinate geometry to five equivalent Br atoms. There are a spread of Ag–Br bond distances ranging from 2.85–2.88 Å. Br is bonded to five equivalent Ag atoms to form a mixture of distorted corner and edge-sharing BrAg5 square pyramids.

36 MATERIALS SCIENCE↗