Active Pixel Sensor (APS) Testbed
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Active Pixel Sensor (APS) Camera CMOS↗
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256X256 CMOS Active Pixel Sensor Camera-on-a-Chip
A CMOS imaging sensor is described that uses active pixel sensor (APS) technology which permits the integration of the detector array with on-chip timing, control and signal chain electronics. This sensor has been used to implement a CMOS APS camera-on-a-chip.
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A Single Chip CMOS APS Digital Camera
A complete programmable digital camera-on-a-chip based on low power active pixel sensor technology is implemented as a single CMOS integrated circuit.
imaging sensor camera-on-a-chip digital camera↗
Integrated imaging sensor systems with CMOS active pixel sensor technology
This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.
double sampling↗
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
Space Microelectronics Image Sensors APS Digital I↗
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
Space Microelectronics Image Sensors APS Digital I↗
Multi-MGy Radiation Hardened Camera for Nuclear Facilities
There is an increasing interest in developing cameras for surveillance systems to monitor nuclear facilities or nuclear waste storages. Particularly, for today's and the next generation of nuclear facilities increasing safety requirements consecutive to Fukushima Daiichi's disaster have to be considered. For some applications, radiation tolerance needs to overcome doses in the MGy(SiO{sub 2}) range whereas the most tolerant commercial or prototypes products based on solid state image sensors withstand doses up to few kGy. The objective of this work is to present the radiation hardening strategy developed by our research groups to enhance the tolerance to ionizing radiations of the various subparts of these imaging systems by working simultaneously at the component and system design levels. Developing radiation-hardened camera implies to combine several radiation-hardening strategies. In our case, we decided not to use the simplest one, the shielding approach. This approach is efficient but limits the camera miniaturization and is not compatible with its future integration in remote-handling or robotic systems. Then, the hardening-by-component strategy appears mandatory to avoid the failure of one of the camera subparts at doses lower than the MGy. Concerning the image sensor itself, the used technology is a CMOS Image Sensor (CIS) designed by ISAE team with custom pixel designs used to mitigate the total ionizing dose (TID) effects that occur well below the MGy range in classical image sensors (e.g. Charge Coupled Devices (CCD), Charge Injection Devices (CID) and classical Active Pixel Sensors (APS)), such as the complete loss of functionality, the dark current increase and the gain drop. We'll present at the conference a comparative study between these radiation-hardened pixel radiation responses with respect to conventional ones, demonstrating the efficiency of the choices made. The targeted strategy to develop the complete radiation hard camera electronics will be exposed. Another important element of the camera is the optical system that transports the image from the scene to the image sensor. This arrangement of glass-based lenses is affected by radiations through two mechanisms: the radiation induced absorption and the radiation induced refractive index changes. The first one will limit the signal to noise ratio of the image whereas the second one will directly affect the resolution of the camera. We'll present at the conference a coupled simulation/experiment study of these effects for various commercial glasses and present vulnerability study of typical optical systems to radiations at MGy doses. The last very important part of the camera is the illumination system that can be based on various technologies of emitting devices like LED, SLED or lasers. The most promising solutions for high radiation doses will be presented at the conference. In addition to this hardening-by-component approach, the global radiation tolerance of the camera can be drastically improve by working at the system level, combining innovative approaches eg. for the optical and illumination systems. We'll present at the conference the developed approach allowing to extend the camera lifetime up to the MGy dose range. (authors)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
CMOS Image Sensors: Electronic Camera On A Chip
Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.
Space Microelectronics Image Sensors APS Digital I↗
JPL CMOS Active Pixel Sensor Technology
This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.
Space Microelectronics Image Sensors APS Digital I↗
High Energy Micron Scale Pixel Hybrid Detector
The objective of this technology development project has been to fabricate and characterize a new X-ray area image sensor innovation designed for high efficiency detection and imaging of hard X-rays (>20 KeV) with micron scale pixel resolution. A key technology component consists of a monolithic hybrid X-ray detector built by layering an amorphous Selenium X-ray photoconductor film directly deposited on a small pitch (7.8μm) CMOS active pixel readout array. A specific goal of this work is to provide a new detector tool to researchers working with synchrotron light sources, to extend the depth of exploration into nanoscale structures, and do so cost effectively. Early generation X-ray imaging detector tools fail to provide adequate resolving power and efficiency at high energies and our innovation provides a solution. A majority of proposed phase I tasks were completed. Those tasks included, in collaboration with KA Imaging, successful fabrication of specified a-Se layers on a 1Mpixel CMOS readout array to create the direct hybrid X-ray imaging array, packaging of the imaging array, assembly of electronics into a shielded detector box, loading user interface software for camera control and image capture, and performing initial (no X-ray) detector evaluation at Farrier Microengineering facilities. After initial tests, extensive testing using the X-ray beam line 1-BM source at Argonne National Laboratory Advanced Photon Source(ANL-APS) was performed. Imaging performance studies were conducted at multiple X-ray beam energies. Studies included X-ray response vs. X-ray energy, vs. applied detector field strength (HV), response linearity vs. integration time, MTF vs. beam energy, image lag measurements, and micron scale resolution pattern target imaging. This high energy micron scale X-ray detection technology is a first of a kind to be evaluated at the ANL-APS and is supported by Dr. Antonino Miceli, head of the detector physics group. Accomplishments include the first successful demonstration of a 1Mpix amorphous Selenium on CMOS readout direct hybrid X-ray imaging detector at a DOE sponsored National Laboratory. Modeled performance predictions were confirmed, proving micron scale resolution as well as an order of magnitude increase in conversion efficiency over conventional scintillator detector performance. A discovery of evidence of propagation-based phase contrast edge enhancement was unplanned and will be exploited in future experiments. This phase 1 technology demonstration verifies the efficacy of proposed high energy micron scale pixel X-ray hybrid a-Se imaging array products. The new detector products will cost effectively replace early generation detector technologies that currently fail to address increasing demand for tools to study nano structures and physical processes at high X-ray energies above 20keV. For example, current systems for transmission X-ray microscopy have low efficiency and available large pixel (~55µm) direct detectors do not offer sufficient resolution for Bragg fringe imaging at high energies. This detector innovation will solve these inadequacies. The new detector technology will compete in a $50M scientific X-ray detector market, growing at 6%, and will benefit Microtomography(µCT), X-ray diffractometry (XRD), Coherent Diffraction Imaging (CDI) applications. One application specified by Dr. Miceli at ANL is the 3D reconstruction of compact crystals at high energies requires small pixel high efficiency X-ray detectors. Farrier Microengineering, working with colleagues at KA Imaging and the University of Waterloo, successfully achieved the critical objectives of the Phase I proposal. We have proven the technical feasibility of this innovation by building and successfully testing a 1Mpixel a-Se/CMOS hybrid direct X-ray imaging array. Our commercialization roadmap of detector products will be implemented during a phase II project. We will demonstrate a migration of the technology to larger detector array sizes, improved temporal performance with detector layer engineering, and improved environmental and operational stability. Manufacturability and cost effectiveness are key objectives and product designs will leverage current state of the art CMOS wafer fabrication quality and volume manufacturing economics.
36 MATERIALS SCIENCE↗