Examination of the thermal variation of the mean square atomic displacements in zinc and evaluation of the associated Debye temperature.
Mean square atomic displacements variation with temperature in Zn, evaluating Debye temperature
Katz, J. L.↗
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Results for “ATOMIC DISPLACEMENTS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effect of low-temperature deuteron irradiation on some type-II superconductors.
Low temperature deuteron irradiation effect on type II superconductors noting atomic displacement, resistivity increase and transition temperature decrease
TRANSITION POINT↗
An X-ray single crystal investigation of iron- rich alloys of iron and aluminum. II - Diffuse scattering measurements of short-range order in alloys containing 14.0 and 18.3 at. percent aluminum
Fe rich Fe-Al alloys single crystals, determining three dimensional order and atomic displacements coefficients by X ray diffuse scattering
Epperson, J. E.↗
Computer simulation of screw dislocation in aluminum
The atomic structure in a 110 screw dislocation core for aluminum is obtained by computer simulation. The lattice statics technique is employed since it entails no artificially imposed elastic boundary around the defect. The interatomic potential has no adjustable parameters and was derived from pseudopotential theory. The resulting atomic displacements were allowed to relax in all three dimensions.
Esterling, D. M.↗
Modified lattice-statics approach to dislocation calculations. I - Formalism
A modified lattice-statics method to calculate the atomic displacements associated with a screw dislocation is outlined. The model incorporates an anharmonic region wherein the forces are derived from a pair potential. Appropriate energy and force expressions are derived. The modifications necessary for the implementation of the conjugate-gradient function minimization method are also derived.
Esterling, D. M.↗
Variable-Energy Ion Beams For Modification Of Surfaces
Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.
Chutjian, Ara↗
Dielectrics for long term space exposure and spacecraft charging: A briefing
Charging of dielectrics is a bulk, not a surface property. Radiation driven charge stops within the bulk and is not quickly conducted to the surface. Very large electric fields develop in the bulk due to this stopped charge. At space radiation levels, it typically requires hours or days for the internal electric fields to reach steady state. The resulting electric fields are large enough to produce electrical failure within the insulator. This type failure is thought to produce nearly all electric discharge anomalies. Radiation also induces bond breakage, creates reactive radicals, displaces atoms and, in general, severely changes the chemistry of the solid state material. Electric fields can alter this process by reacting with charged species, driving them through the solid. Irradiated polymers often lose as much as a percent of their mass, or more, at exposures typical in space. Very different aging or contaminant emission can be induced by the stopped charge electric fields. These radiation effects are detailed.
Frederickson, A. R.↗
Molecular dynamics investigation of radiation damage in semiconductors
Results of a molecular dynamics investigation of the effects of radiation damage on the crystallographic structure of semiconductors are reported. Particular cosiderastion is given to the formation of point defects and small defect complexes in silicon at the end of a radiation-damage cascade. The calculations described make use of the equivalent crystal theory of Smith and Banerjea (1988). Results on the existence of an atomic displacement threshold, the defect formation energy, and some crystallographic information on the defects observed are reported.
Good, Brian S.↗
Proton Nonionizing Energy Loss (NIEL) for Device Applications
Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.
Jun, Insoo↗
Space Weathering of Olivine in Lunar Soils: A Comparison to Itokawa Regolith Samples
Regolith particles from airless bodies preserve a record of the space weathering processes that occurred during their surface exposure history. These processes have major implications for interpreting remote-sensing data from airless bodies. Solar wind irradiation effects occur in the rims of exposed grains, and impact processes result in the accumulation of vapordeposited elements and other surface-adhering materials. The grains returned from the surface of Itokawa by the Hayabusa mission allow the space weathering "style" of a chondritic, asteroidal "soil" to be compared to the lunar case. Here, we present new studies of space-weathered olivine grains from lunar soils, and compare these results to olivine grains from Itokawa. Samples and Methods: We analyzed microtome thin sections of olivine grains from the 20-45 micron fractions of three lunar soils: 71061, 71501 and 10084 (immature, submature and mature, respectively). Imaging and analytical data were obtained using a JEOL 2500SE 200kV field-emission scanning-transmission electron microscope equipped with a thin-window energy-dispersive x-ray spectrometer. Similar analyses were obtained from three Hayabusa olivine grains. Results and Discussion: We observed lunar grains showing a range of solar flare track densities (from <10(exp 9) to approx.10(exp 12)/sq cm). The lunar olivines all show disordered, highly strained, nanocrystalline rims up to 150-nm thick. The disordered rim thickness is positively correlated with solar flare track density. All of the disordered rims are overlain by a Si-rich amorphous layer, ranging up to 50-nm thick, enriched in elements that are not derived from the host olivine (e.g., Ca, Al, and Ti). The outmost layer represents impact-generated vapor deposits typically observed on other lunar soil grains. The Hayabusa olivine grains show track densities <10(exp 10)/sq cm and display disordered rims 50- to 100-nm thick. The track densities are intermediate to those observed in olivines in immature and submature lunar soils and indicate surface exposures of approx. 10(exp 5) years. The outermost few nanometers of the disordered rims on Hayabusa olivines are more Si-rich and Mg- and Fe-depleted relative to the cores of the grains and likely represent a minor accumulation of impact-generated vapors or sputter deposits. Nanophase Fe metal particles are less abundant in the Hayabusa rims compared to the rims on lunar grains. Conclusions: The Hayabusa and lunar olivine grain rims have widths and microstructures consistent with formation from atomic displacement damage from solar wind ions. The space weathering features in the Hayabusa grains are similar to those observed in olivines from immature to submature lunar soils. A major difference, however, is that the Hayabusa grains appear to lack the hypervelocity impact products (melt spherules, thick vapor deposits, and abundant nanophase Fe metal particles) that are common in lunar soil grains with a similar exposure history.
Keller, L. P.↗
Solar Ion Processing of Itokawa Grains: Constraints on Surface Exposure Times
Analytical TEM observations obtained to date reveal that a significant sub-population of grains returned from the surface of asteroid Itokawa have had their outer 30-100 nm processed by space weathering effects. Although the effects include some surface deposition of condensed impact vapor and isolated impact melt splashes, much of the width of the space weathered outer margins or "rims" on grains is derived from solar wind processing of the original host grain. Similar to what has long been reported for some lunar grains, the ion-processed rims on Itokawa grains exhibit varing degrees and depths of penetration of atomic-displacement ion damage, resulting in complete amorphization for some rims (particularly in plagioclase), or formation of highly defective but still crystalline structures in others (particularly in pyroxene and olivine). Possibly different from lunar grains, however, is the presence of isolated internal cavities or voids in Itokawa grain rims, which may be implantation "bubbles" due to accumulating implanted solar wind H and/or He. For a given mineral exposed at a particular set of long term solar wind conditions, the level of ion damage in a given grain rim, the depth of damage penetration represented by the rim width, and the formation or lack of formation of implantation bubbles can all be linked to the time spent by the grain in an uncovered state on the topmost, space-exposed, regolith surface. For the lunar case, we have previously shown that with reasonable assumptions about solar wind characteristics over time, a model can be developed to estimate this exposure time based on the width of amorphous rims on lunar grains. Here we report on an expansion of the model to cover exposure time information contained in the array of solar ion-induced features in Itokawa grains.
Christoffersen, R.↗
Unraveling Solar Wind Space Weathering of Carbon-Rich Asterods: Low-Flux VS. High-Flux Ion Irradiation of Murchison
Introduction: Space weathering processesalter the microstructural, compositional, and optical properties of airless planetary surfaces.Solar wind space weatheringforms ion-damaged rims within the outermost ~100 nm of regolith grains through atomic-displacements and implantation of energetic H+and He+ions[1]. Transmission electron microscope(TEM)studies of space weathered Itokawa and lunar olivine particles reveal predominantly nanocrystalline solar wind-damaged rims with only minor regions of amorphization[2-5]. This finding differs from laboratoryion irradiation experiments in which samples become amorphous at fluences 2-3 orders of magnitude lower than the independentlyconstrained fluences for still-crystalline natural samples [6-7].Ion flux is generally considered to have a secondaryeffectcompared to fluence in these irradiation experiments. However, solar wind irradiation of natural samples occurs at a flux that is ~4-5 orders of magnitude lower than whatisused inlaboratory simulations (e.g., [6,8-9]). Constraining how the very low ion flux of solar wind influences the microstructural, chemical, and spectral alteration of silicate minerals will improve our understanding of solar wind space weathering and aid in the analysis of returned samples from the Hayabusa2 and OSIRIS-REx missions. Here we report results from low-and high-flux ion irradiation experiments on the Murchison (CM2)meteoritewithcomparable total fluences. Methods: We performed low-flux and high-flux He+(4 keV) and H+(1 keV) irradiation experiments on separate, dry-cut Murchison slabs. Low-flux He+irradiation reached a total fluence of 2.1 x 1016ions/cm2(~400 years of exposure at Bennu) using a flux of 3.6 x 1011ions/cm2/s; low-flux H+irradiation reached a total fluence of 3.9 x 1016ions/cm2(~30 years) using a flux of 6.6 x 1011ions/cm2/s. High-flux He+irradiation reached a total fluence of 2.0 x 1016ions/cm2(~400 years)using a flux of 9.1 x 1012ions/cm2/s; high-flux H+irradiation reached a total fluence of 5.8 x 1016ions/cm2(~50 years)using flux of 8.4 x 1012ions/cm2/s. By irradiating to similar total fluences in both the low-flux and high-flux experiments, we can better isolate and evaluatethe effects of ion flux. Differences between unirradiatedand irradiated surfaces are determined using threeanalytical techniques:(1) in situX-ray photoelectron spectroscopy(XPS) reveals changes in surface chemistry,(2) visible to near-infrared spectroscopy (VNIR; 0.35-2.5 μm) highlights changes in spectraltrends, such as albedo and slope, and (3) TEM and energy-dispersive X-ray spectroscopy (EDS) identifieschanges in nanoscale structure and elemental composition within olivine and matrix electron-transparent thin sections prepared using focused ion beam scanning electron microscopy (FIB-SEM). Results and Discussion: XPS analyses of the low-fluxand high-fluxHe+-and H+-irradiated samples showa minorreduction in surface carbon contentand chemicalreduction ofFe3+to Fe2+. The latter result is consistent with the higher Fe2+/Fe3+ratios observed in phyllosilicate-rich space weathered rims of Ryugu grains [10].VNIR analyses suggest that the low-flux H+-irradiated spectrum has a slightly bluer slope (over 0.65-2.5 μm) compared to the unirradiated VNIR spectrum from [9] while the low-flux He+-irradiated spectral slope is comparable to the unirradiated surface. Both the high-flux He+-and H+-irradiated VNIR spectra exhibitslightlyhigheralbedos at shorter wavelengths relativeto their unirradiated counterparts, with He+irradiation yielding a greater change. Thus far, the low-flux He+-irradiated matrix and olivine FIBsections as well as the low-flux H+-irradiated olivine FIBsection have been examined with TEM. The surfaces of all three samplesshowless vesiculation than high-flux/high-fluenceirradiated matrix and olivine samples from [9]. The depth of phyllosilicate amorphization in thelow-fluxHe+-irradiated matrix FIBsection varieslaterally, with crystalline domains occurring as shallow as ~25 nm in some regions. Thelow-flux He+-irradiated olivine FIBsection has acontinuous,~40-90 nm thick ion-affected layer with polycrystalline and amorphous microstructures. The low-flux H+-irradiated olivine sampleexhibits a distinct, ~10-40 nm ion-affected layer whose uppermost ~20 nmin thicker regions is predominantly amorphous.Continuing to compare results from this work to those from [9] will provide a comprehensive understanding of how ion flux impacts the microstructural, chemical, and optical modification of various mineral phases and, in turn,help identify space weathering features from parent body alteration in Hayabusa2 and OSIRIS-REx returned samples.
D L Laczniak↗
Radiation damage in scientific charge-coupled devices
Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.
Janesick, James↗
Metal-semiconductor interfacial reactions - Ni/Si system
X-ray photoelectron spectroscopy and channeling measurements with MeV He-4(+) ions have been used to probe the structure of the interface in the Ni/Si system. It is found that reactions occur where Ni is deposited on Si at 10 to the -10th torr: Si atoms are displaced from lattice sites, the Ni atoms are in an Si-rich environment, and the Ni/Si interface is graded in composition. Composition gradients are present at both interfaces in the Si/Ni2/Si/Ni system. For the Ni-Si system, cooling the substrate to 100 K slows down the reaction rate. The temperature dependence of the interfacial reactivity indicates the kinetic nature of metal-semiconductor interfaces.
Cheung, N. W.↗
Analyses of spacecraft polymeric materials
Partial analytical characterizations are made by four different techniques of three polymeric materials used in conjunction with the Space Telescope for samples flown on mission STS-8. The polymers were Tedlar, Kapton H, and Kapton F. The surfaces of the three polymers were attacked and oxidized by atomic oxygen, and fluorine is lost from the surface of Kapton F, largely due to displacement by atomic oxygen.
Worley, S. D.↗
Vacancy-Vacancy Interaction in Copper
The binding energy of two vacancies in a static lattice as a function of their separation and the positions of their displaced neighboring atoms has been calculated using a Morse potential function model for copper. It was found that two vacancies attract one another at separation less than about 7 A. At separations greater than 7 A the vacancies do not interact appreciably. The most stable separation was found to be the first nearest- neighbor separation or the divacancy configuration, for which the binding energy was found to be 0.64 ev. Based on these calculations, it is shown that third-stage annealing in irradiated copper may be accounted for by divacancy migration. The role of the divacancy in copper self-diffusion is also explained.
Girifalco, L. A.↗
Helium vs. Proton Induced Displacement Damage in Electronic Materials
In this project, the specific effects of displacement damage due to the passage of protons and helium nuclei on some typical electronic materials will be evaluated and contrasted. As the electronic material absorbs the energetic proton and helium momentum, degradation of performance occurs, eventually leading to overall failure. Helium nuclei traveling at the same speed as protons are expected to impart more to the material displacement damage; due to the larger mass, and thus momentum, of helium nuclei compared to protons. Damage due to displacement of atoms in their crystalline structure can change the physical properties and hence performance of the electronic materials.
Ringo, Sawnese↗
Iodine Tagging Velocimetry in a Mach 10 Wake
A variation on molecular tagging velocimetry (MTV) [1] designated iodine tagging velocimetry (ITV) is demonstrated. Molecular iodine is tagged by two-photon absorption using an Argon Fluoride (ArF) excimer laser. A single camera measures fluid displacement using atomic iodine emission at 206 nm. Two examples ofMTVfor cold-flowmeasurements areN2OMTV [2] and Femtosecond Laser Electronic Excitation Tagging [3]. These, like most MTV methods, are designed for atmospheric pressure applications. Neither can be implemented at the low pressures (0.1- 1 Torr) in typical hypersonic wakes. Of all the single-laser/singlecamera MTV approaches, only Nitric-Oxide Planar Laser Induced Fluorescence-based MTV [4] has been successfully demonstrated in a Mach 10 wake. Oxygen quenching limits transit times to 500 ns and accuracy to typically 30%. The present note describes the photophysics of the ITV method. Off-body velocimetry along a line is demonstrated in the aerothermodynamically important and experimentally challenging region of a hypersonic low-pressure near-wake in a Mach 10 air wind tunnel. Transit times up to 10 μs are demonstrated with conservative errors of 10%.
Balla, Robert Jeffrey↗