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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

1/f noise in semiconductor and metal nanocrystal solids

Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

The use of 1/f noise measurements is explored for the purpose of finding faster techniques for electromigration (EM) characterization in advanced microelectronic interconnects, which also enable a better understanding of its underlying physical mechanisms. Three different applications of 1/f noise for EM characterization are explored. First, whether 1/f noise measurements during EM stress can serve as an early indicator of EM damage. Second, whether the current dependence of the noise power spectral density (PSD) can be used for a qualitative comparison of the defect concentration of different interconnects and consequently also their EM lifetime t50. Third, whether the activation energies obtained from the temperature dependence of the 1/f noise PSD correspond to the activation energies found by means of classic EM tests. In this paper, the 1/f noise technique has been used to assess and compare the EM properties of various advanced integration schemes and different materials, as they are being explored by the industry to enable advanced interconnect scaling. More concrete, different types of copper interconnects and one type of tungsten interconnect are compared. The 1/f noise measurements confirm the excellent electromigration properties of tungsten and demonstrate a dependence of the EM failure mechanism on copper grain size and distribution, where grain boundary diffusion is found to be a dominant failure mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Extraction of the spin-glass free-energy landscape from $1/f$ noise measurements

The 1/f resistance noise has been measured in thin CuMn (13.5 at.%) spin-glass films. The temperature and frequency dependence have been analyzed in terms of the landscape of free-energy barriers. Here this analysis provides the full barrier distribution for various thin film thicknesses between 10 nm and 80 nm. The free-energy barrier height distribution's width and energy position have been determined. Contrary to previous models with fixed shape and energy, the free-energy landscape is described by a distribution of barriers that both shifts and changes shape as the temperature is reduced. The dependence of this distribution is in contrast with recent predictions. Using the fluctuation dissipation theorem, the 1/f measurements connect with χ", displaying agreement with other direct measurements of the latter.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions

Magnetic 1/f noise is compared in magnetic tunnel junctions with electron-beam evaporated and sputtered MgO tunnel barriers in the annealing temperature range 350 - 425 Degree-Sign C. The variation of the magnetic noise parameter ({alpha}{sub mag}) of the reference layer with annealing temperature mainly reflects the variation of the pinning effect of the exchange-bias layer. A reduction in {alpha}{sub mag} with bias is associated with the bias dependence of the tunneling magnetoresistance. The related magnetic losses are parameterized by a phase lag {epsilon}, which is nearly independent of bias especially below 100 mV. The similar changes in magnetic noise with annealing temperature and barrier thickness for two types of MgO magnetic tunnel junctions indicate that the barrier layer quality does not affect the magnetic losses in the reference layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Reduction of 1/f noise in graphene after electron-beam irradiation

We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S{sub I}/I{sup 2} (I is the source-drain current) by an order-of magnitude at the radiation dose of 10{sup 4} {mu}C/cm{sup 2}. We analyzed the observed noise reduction in the limiting cases of the mobility and carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n-type part of the space-charge region results in limitation of the current by the tunneling resistance at intermediate currents and shunting of the n-type barrier at high currents. The increase in the average number of tunneling electrons suppresses the 1/f current noise at intermediate currents. The strong growth in the density of current noise at high currents, S{sub J} ∝ J{sup 3}, is attributed to a decrease in the average number of tunneling electrons as the n-type barrier decreases in height and width with increasing forward bias. The tunneling-recombination leakage current along extended defects grows faster than the tunneling injection current, which leads to emission efficiency droop.

36 MATERIALS SCIENCE↗
NASA NTRS2021

Effect of High-K Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high- dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A low-noise level of ~ 2.2  10-10 Hz-1 has been obtained at f = 10 Hz. The origin and physical mechanism of the noise can be interpreted by the McWhorter context, where fluctuations in the carrier number contribute dominantly to the low-frequency noise. Optimizing fabrication processes reduced the number of charged impurities in the graphene field-effect transistors. The study has provided insights into the underlying physical mechanisms of the noise at low-frequency for reducing the noise in graphene-based devices.

Yifei Wang↗
DOE OSTI2014

Low-frequency 1/f noise in MoS{sub 2} transistors: Relative contributions of the channel and contacts

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS{sub 2} field-effect transistors revealing the relative contributions of the MoS{sub 2} channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS{sub 2} transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS{sub 2} transistors, are 2 × 10{sup 19} eV{sup −1}cm{sup −3} and 2.5 × 10{sup 20} eV{sup −1}cm{sup −3} for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS{sub 2} transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS{sub 2} and other van der Waals materials.

42 ENGINEERING↗
DOE OSTI2015

Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO{sub 2}/Si) along with those on SiO{sub 2}/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO{sub 2}/Si despite having comparable mobilities at room temperature. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO{sub 2}. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO{sub 2}, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electronic 1/f noise as a probe of dimensional effects on spin-glass dynamics

Over the past decade, spin-glass simulations have improved to the point that they now access time- and length-scales comparable to experiments at the mesoscale. A recent series of thin-film field-cooled/zero-field-cooled magnetization (FC/ZFC) experiments demonstrated activated spin dynamics, with a temperature-independent activation energy proportional to the logarithm of the film thickness and with coefficients in remarkable agreement with the simulation. These measurements require the application of small magnetic fields, which has been shown to affect the spin-glass energy landscape. Measurements of the 1/f noise in metallic spin-glasses have been previously shown to be a sensitive probe of the spin dynamics, and the measurements can be made without applying a magnetic field. In this mini-review, we review these techniques and discuss how transport measurements can fit into the current landscape of spin-glass measurements. We compare previous measurements to more recent measurements on similar films, made with ostensibly different cooling protocols, and compare both the previous and recent measurements to the magnetometry. The transport measurements—taken over a wider range of temperature than magnetometry—suggest that the maximum spin-glass energy barrier height is temperature-dependent, not fixed, possibly due to two-dimensional dynamics. We discuss this possibility, along with future measurements, which may be able to resolve this mystery.

1/f noise↗
DOE OSTI2015

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

We have investigated low-frequency 1/f noise in the boron nitride–graphene–boron nitride heterostructure field-effect transistors on Si/SiO{sub 2} substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ∼30 000 to ∼36 000 cm{sup 2}/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ∼5 × 10{sup −9 }μm{sup 2 }Hz{sup −1}, which is a factor of ×5 – ×10 lower than that in non-encapsulated graphene devices on Si/SiO{sub 2}. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO{sub 2} gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (V{sub SD}). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low V{sub SD} region. We propose that the depinning of the electron-hole puddles is induced at finite V{sub SD}, which may explain this anomalous noise behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Comment on “A case study on the scaling of 1/f noise: La{sub 2∕3}Sr{sub 1∕3}MnO{sub 3} thin films” [J. Appl. Phys. 113, 094901 (2013)]

The problem of non-standard scaling of the 1/f noise in thin manganite films was revisited in the above paper, suggesting the quantum theory of fundamental flicker noise for the interpretation of the unusual dependence of the normalized Hooge parameter on the sample volume. Experimental evidence has been reported, showing that in these materials such volume dependence is, instead, an artifact of extrinsic noise sources, e.g., contact noise. Moreover, the proposed theoretical model implies a linear temperature dependence of the Hooge parameter, which is against the experimental data reported here. Based on these arguments, it is possible to conclude that the quantum theory of fundamental flicker noise cannot be applied to the case of La{sub 2∕3}Sr{sub 1∕3}MnO{sub 3} thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures T{sub s}. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with T{sub s} which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, R{sub sh} and [αμ]{sub eff} increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1986

Low-frequency 1/f noise in the interplanetary magnetic field

Spacecraft observations of the interplanetary magnetic field at 1 AU are shown to have frequency spectra with a 1/f dependence in the range 2.7-80 microHz. It is suggested that the 1/f spectrum results from the superposition of uncorrelated samples of solar surface turbulence that have log-normal distributions of correlation lengths corresponding to a scale-invariant distribution of correlation times over an appropriate range of parameters.

Matthaeus, W. H.↗
NASA NTRS2016

Low Frequency 1/f Noise on QWIPs, nBn, and Superlattice Focal Plane Array

Noise Equivalent Difference Temperature (NE△T) is a standard performance metric for most infrared focal plane array (FPA) systems. The frequency bandwidth and range associated with NE△T is at high frequency and it does not describe the long time noise behavior or the very low frequency noise of the FPA. Very low frequency noise measurement requires data capture that takes longer time duration and sampling interval. This study investigates low frequency noise in QWIP, nBn and LWIR n-type Complementary Barrier Infrared Detector (CBIRD) FPAs. The corner frequencies are extracted from the power spectral density (PSD) as function of frequency. The peak wavelength, quantum efficiency of QWIP detector are 6.2 µm and 2 %, respectively. QWIP FPA has a mean NE△T ~ 25 mK at an operating temperature of 65 K and an integration time of 16 msec. The mean QWIP PSD plot shows a corner frequency of < 0.5 mHz. The nBn FPA with 4 µm cut off and quantum efficiency of 67 % has NE△T ~ 15.6 mK at an integration time ~ 7.52 msec and an operating temperature of 120 K. The nBn has corner frequency of > 50 mHz. Lastly the n-type CBIRD FPA with a 50% cutoff at 8.8 µm and quantum efficiency of ~ 50 % has an NE△T ~ 18.6 mK at an integration time of 1.86 msec and operating temperature 120 K. The superlattice FPA has a corner frequency ~ 10 mHz. The investigation of the tail on the NE△T histogram reveals that its origin is not accounted for entirely by the high noise current, but also it needs the inclusion of lower responsivity for some pixels.

Pepper, B.↗