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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,783 records · Page 99
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Shock remagnetization associated with meteorite impact at planetary surfaces

The stages of a cratering event are considered together with four distinct magnetization volumes, taking into account the jetted material, the ejecta, the impact melt, and shock-compressed material which remains in situ. Shock classifications are discussed along with mineralogical aspects of shock remagnetization, the behavior of iron sulfides, defect cubic spinels, ilmenite-hematite series, the Fe-Ti-O system, alloys phases, and silicates. Remagnetization mechanisms considered include a first order reversible crystallographic transition in bcc iron-nickel, a second order Curie point transition in fcc iron-nickel, shock-induced anisotropy, and shock melting of iron containing silicates. Experimental results are reported together with a hypothetical crater model.

Wasilewski, P. J.↗
NASA NTRS2014

Biosentinel: Developing a Space Radiation Biosensor

Ionizing radiation presents a major challenge to human exploration and long-term residence in space. The deep-space radiation spectrum includes highly energetic particles that generate double strand breaks (DSBs), deleterious DNA lesions that are usually repaired without errors via homologous recombination (HR), a conserved pathway in all eukaryotes. While progress identifying and characterizing biological radiation effects using Earth-based facilities has been significant, no terrestrial source duplicates the unique space radiation environment.We are developing a biosensor-based nanosatellite to fly aboard NASAs Space Launch System Exploration Mission 1, expected to launch in 2017 and reach a 1AU (astronomic unit) heliocentric orbit. Our biosensor (called BioSentinel) uses the yeast S. cerevisiae to measure DSBs in response to ambient space radiation. The BioSentinel strain contains engineered genetic defects that prevent growth until and unless a radiation-induced DSB near a reporter gene activates the yeasts HR repair mechanisms. Thus, culture growth and metabolic activity directly indicate a successful DSB-and-repair event. In parallel, HR-defective and wild type strains will provide survival data. Desiccated cells will be carried within independent culture microwells, built into 96-well microfluidic cards. Each microwell set will be activated by media addition at different time points over 18 months, and cell growth will be tracked continuously via optical density. One reserve set will be activated only in the occurrence of a solar particle event. Biological measurements will be compared to data provided by onboard physical dosimeters and to Earth-based experiments.BioSentinel will conduct the first study of biological response to space radiation outside Low Earth Orbit in over 40 years. BioSentinel will thus address strategic knowledge gaps related to the biological effects of space radiation and will provide an adaptable platform to perform human-relevant measurements in multiple space environments. We hope that it can therefore be used on the ISS, on and around other planetary bodies as well as other exploration platforms as a self-contained system that will allow us to compare and calibrate different radiation environments.BioSentinels results will be critical for improving interpretation of the effects of space radiation exposure, and for reducing the risk associated with long-term human exploration.

space radiation↗
DOE OSTI2014

Anisotropic In distribution in InGaN core-shell nanowires

In this work, we investigate the local atomic structure of defect-free homogeneous and self-organized core-shell structure nanowires by means of X-ray Absorption Fine Structure (XAFS) Spectroscopy at the In L{sub III} and K edges and Multiwavelength Anomalous Diffraction. The results are interpreted by comparison of the experimental data with X-ray absorption calculations carried out with ab initio structural models. Extended-XAFS data analysis at In K-edge shows an anisotropic In distribution in the second nearest neighbors pointing out to a deviation from randomness in In distribution for the core-shell sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe 2

Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This “brain-like” computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe 2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe 2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance–voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. In conclusion, as local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.

2D material↗
DOE OSTI2014

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces

An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

How far do electrons delocalize?

Electron delocalization is central to chemical bonding, but it is also a fundamentally nonclassical and nonintuitive quantum mechanical phenomenon. Tools to quantify and visualize electron delocalization help to understand, teach, and predict chemical reactivity. We develop a new approach to quantify and visualize electron delocalization in real space. Our electron delocalization range function EDR(r{sup -vector};u) quantifies the degree to which electrons at point r{sup -vector} in a calculated wavefunction delocalize over length scale u. Its predictions are physically reasonable. For example, EDR(r{sup -vector};u=0.25 bohr) is close to one at points r{sup -vector} in the cores of first-row atoms, consistent with the localization of core electrons to ∼0.25 bohr. EDR(r{sup -vector};u=1 bohr) is close to one at points r{sup -vector} in typical covalent bonds, consistent with electrons delocalizing over the length of the bond. Our approach provides a rich representation of atomic shell structure; covalent and ionic bonding; the delocalization of excited states, defects, and solvated electrons; metallic and insulating systems; and bond stretching and strong correlation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2011

NASA Tech Briefs, July 2011

Topics covered include: 1) Collaborative Clustering for Sensor Networks; 2) Teleoperated Marsupial Mobile Sensor Platform Pair for Telepresence Insertion Into Challenging Structures; 3) Automated Verification of Spatial Resolution in Remotely Sensed Imagery; 4) Electrical Connector Mechanical Seating Sensor; 5) In Situ Aerosol Detector; 6) Multi-Parameter Aerosol Scattering Sensor; 7) MOSFET Switching Circuit Protects Shape Memory Alloy Actuators; 8) Optimized FPGA Implementation of Multi-Rate FIR Filters Through Thread Decomposition; 9) Circuit for Communication Over Power Lines; 10) High-Efficiency Ka-Band Waveguide Two-Way Asymmetric Power Combiner; 11) 10-100 Gbps Offload NIC for WAN, NLR, and Grid Computing; 12) Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices; 13) Flight Planning in the Cloud; 14) MPS Editor; 15) Object-Oriented Multi Disciplinary Design, Analysis, and Optimization Tool; 16) Cryogenic-Compatible Winchester Connector Mount and Retaining System for Composite Tubes; 17) Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy; 18) Planar Rotary Piezoelectric Motor Using Ultrasonic Horns; 19) Self-Rupturing Hermetic Valve; 20) Explosive Bolt Dual-Initiated from One Side; 21) Dampers for Stationary Labyrinth Seals; 22) Two-Arm Flexible Thermal Strap; 23) Carbon Dioxide Removal via Passive Thermal Approaches; 24) Polymer Electrolyte-Based Ambient Temperature Oxygen Microsensors for Environmental Monitoring; 25) Pressure Shell Approach to Integrated Environmental Protection; 26) Image Quality Indicator for Infrared Inspections; 27) Micro-Slit Collimators for X-Ray/Gamma-Ray Imaging; 28) Scatterometer-Calibrated Stability Verification Method; 29) Test Port for Fiber-Optic-Coupled Laser Altimeter; 30) Phase Retrieval System for Assessing Diamond Turning and Optical Surface Defects; 31) Laser Oscillator Incorporating a Wedged Polarization Rotator and a Porro Prism as Cavity Mirror; 32) Generic, Extensible, Configurable Push-Pull Framework for Large-Scale Science Missions; 33) Dynamic Loads Generation for Multi-Point Vibration Excitation Problems; 34) Optimal Control via Self-Generated Stochasticity; 35) Space-Time Localization of Plasma Turbulence Using Multiple Spacecraft Radio Links; 36) Surface Contact Model for Comets and Asteroids; 37) Dust Mitigation Vehicle; 38) Optical Coating Performance for Heat Reflectors of the JWST-ISIM Electronic Component; 39) SpaceCube Demonstration Platform; 40) Aperture Mask for Unambiguous Parity Determination in Long Wavelength Imagers; 41) Spaceflight Ka-Band High-Rate Radiation-Hard Modulator; 42) Enabling Disabled Persons to Gain Access to Digital Media; 43) Cytometer on a Chip; 44) Principles, Techniques, and Applications of Tissue Microfluidics; and 45) Two-Stage Winch for Kites and Tethered Balloons or Blimps.

Source record↗
DOE OSTI2017

Development of a bayesian belief network model for the software reliability assessment of nuclear digital I and C safety systems - 206

Since the digital instrumentation and control systems are expected to play an important role for the safety systems in nuclear power plants (NPPs), the need has emerged to not only establish a basis for incorporating software behavior into digital I and C system reliability models, but also to quantify the failure probability of the software used in NPP digital protection systems. In this study, a Bayesian belief network (BBN) model is developed to quantitatively assess software reliability by estimating the number of faults in a software program considering its software development life cycle (SDLC). The model structure and parameters are established based on the information applicable to NPP safety-related systems and the evidence used to construct and quantify the BBN model was collected from three stages of expert elicitation. The software failure probability is estimated from the number of residual defects in a software program at the end of SDLC phase. As a case study, the BBN model was applied to quantify the software reliability of a typical digital protection software having the size of 50 function points and having the Medium development and validation and verification (V and V) qualities. The developed model can be applied to estimate the failure probability for both developing and deployed safety-related NPP software, and such results can be used to evaluate the quality of the digital I and C systems in addition to estimating potential reactor risk due to software failure. (authors)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2015

Three-dimensional periodic dielectric structures having photonic Dirac points

The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the .beta.-factor) over large areas, contrary to the conventional wisdom that the .beta.-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

New wide band gap semiconductors are needed to increase the power, voltage, and switching frequency limits of power electronic devices. A recent computational search identified a family of ultrawide band gap (4.8-7.8 eV) group-III orthoborates as promising materials for power electronics, assuming n-type doping could be attained. In this report we test this assumption by investigating the defect chemistry and dopability of rhombohedral calcite-structured AlBO 3 , GaBO 3 , and InBO 3 using first-principles calculations. Of the three, we find InBO 3 to have the most potential for n-type doping without significant compensation by native acceptor defects. Furthermore, Zr is predicted to readily substitute for In and behave as a shallow donor with maximal net donor concentrations exceeding 1 x 10 18 cm -3 under growth conditions typical for this class of materials. We also demonstrate thin film growth of InBO3 and measure its absorption onset, which we find to be consistent with theory. Ultimately, our results confirm the promise of InBO 3 as an n-type ultrawide band gap semiconductor and point to alloying with GaBO 3 and AlBO 3 for further optimization of band gap and electron concentration for high-power applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic Structure of the Au Nanoparticle-TiO 2 Heterojunction: Influence of Nanoparticle Size, Shape, Oxygen Vacancies, and Temperature

The electronic structure of the gold nanoparticle-titanium dioxide (AuNP-TiO 2 ) heterojunction plays a critical role for charge transfer and recombination dynamics that underpin its photocatalytic function. However, building a representative model to capture the key physics remains a significant challenge. Here, we investigate the influence of the AuNP size and shape, as well as oxygen vacancy (V O ) defects at the anatase-phase TiO 2 (101) surface and the temperature of the heterojunction, on its interfacial electronic properties. Using density functional theory (DFT), we compare the closed-shell Au 20 and open-shell Au 19 clusters interfaced with pristine and V O defect TiO 2 surfaces. We find that the presence of a V O defect transforms pure TiO 2 from a p-type to an n-type semiconductor, reversing the interfacial band bending from downward to upward. For the heterosystem, density of states (DOS) analysis shows that V O minimally affects the open-shell Au 19 -TiO 2 system, but it significantly alters the closed-shell Au 20 -TiO 2 system, converting it from p-type to n-type at the Γ-point at 0 K. Furthermore, ab initio molecular dynamics (AIMD) simulations at 300 K reveal significant thermal fluctuations in AuNP positions relative to the TiO 2 surface. These fluctuations result in dynamic variations in the gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) in all systems studied: Au 19 NP-Pristine TiO 2 , Au 20 NP-Pristine TiO 2 , Au 19 NP-V O defect TiO 2 , and Au 20 NP-V O defect TiO 2 . Complementary Bader charge analysis performed at both 0 K and finite-temperature AIMD snapshots supports the emergence of an upward band bending and the formation of a Schottky barrier at the V O containing heterojunctions. Notably, we find that at finite temperature, an Au atom can dynamically passivate the V O , leading to a pronounced widening of the HOMO-LUMO gap in the AuNP-V O defect TiO 2 heterojunctions. Our computational findings underscore the pivotal role of the V O defect and thermal effects in modulating interfacial band alignment, electronic states, and HOMO-LUMO gaps, providing insights for designing Au-TiO 2 heterojunctions with tailored electronic properties.

Mora Perez, Carlos [Lawrence Berkeley National Lab↗
DOE OSTI2022

Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory

Space is the operating environment of a multitude of systems that our society is heavily reliant on today, however, maintaining operability there necessitates special consideration of the electronic systems' tolerance of space radiation. Electronic systems are critically dependent on the electronic properties of their semiconductor components, which are modified by space radiation with an adverse impact on the space system performance. What innate property allows some semiconductors to sustain little damage while others accumulate defects rapidly with dose is poorly understood, which limits the extent to which radiation tolerance can be implemented as a design criterion. Here, to gain insight into what properties are drivers of semiconductor radiation tolerance, the first step is to generate a dataset of the relative radiation tolerance of a broad sampling of semiconductors. To accomplish this, Rutherford backscatter channeling experiments are used to compare the displaced lattice atom buildup in InAs, InP, GaP, GaN, ZnO, MgO, and Si as a function of stepwise alpha particle dose. With this experimental information on radiation-induced incorporation of interstitial defects in hand, hybrid density functional theory electron densities (and their derived quantities) are calculated and their gradient and Laplacian are evaluated to obtain key fundamental information about the interactions in each material. It is shown that simple, undifferentiated values (which are typically used to describe bond strength) are insufficient to predict radiation tolerance. Instead, the curvature of the electron density at bond critical points provides a measure of radiation tolerance consistent with the experimental results obtained. This curvature and associated forces surrounding bond critical points have the potential to disfavor the localization of displaced lattice atoms at these points, favoring their diffusion toward perfect lattice positions. With this criterion to predict radiation tolerance, simple density functional theory simulations can be conducted on potential new materials to gain insight into how they may operate in demanding high radiation environments.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Simultaneous and coordinated rotational switching of all molecular rotors in a network

A range of artificial molecular systems have been created that can exhibit controlled linear and rotational motion. In the development of such systems, a key step is the addition of communication between molecules in a network. Here, we show that a two-dimensional array of dipolar molecular rotors can undergo simultaneous rotational switching by applying an electric field from the tip of a scanning tunnelling microscope. Several hundred rotors made from porphyrin-based double-decker complexes can be simultaneously rotated when in a hexagonal rotor network on a Cu(111) surface by applying biases above ±1 V at 80 K. The phenomenon is observed only in a hexagonal rotor network due to the degeneracy of the ground state dipole rotational energy barrier of the system. Defects are essential to increase electric torque on the rotor network and to stabilize the switched rotor domains. At low biases and low initial rotator angles, slight reorientations of individual rotors can occur resulting in the rotator arms pointing in different directions. In conclusion, analysis reveals that the rotator arm directions here are not random, but are coordinated to minimize energy via cross talk among the rotors through dipolar interactions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Impact of Heat Input and Step Over Distance on Part Geometry for Multi-Bead WAAM Components

Abstract This study investigates the impact of heat input and overlap ratio or stepover distance on part geometry in wire arc additive manufacturing (WAAM). In this work, an experimental approach was taken to quantify the variation in height and aspect ratio of walls at different combinations of overlap and heat input. Multi-bead walls were deposited with the overlap ratio varying from ½, ⅔, and 1 at a low, medium, and high-power set point on the welding power supply. A relationship between heat input, overlap ratio, and the resultant part geometry is established. Trials with an overlap ratio of one and low to medium heat input exhibited greater lack of fusion defects than the high heat input trials. At higher heat input levels, the as-deposited geometry was found to have less variation in height and an increase in aspect ratio compared to lower heat input trials. The aspect ratio of deposited walls ranged from approximately 1, for the low-power trial with an overlap ratio of ½, to approximately 7, for the high-power trial with an overlap ratio of 1. Additionally, the low and medium power trials with an overlap ratio of ⅔ exhibited the least height variation in the top surface for those heat input levels with an average range of 2.9 mm and 1.8 mm respectively. For the high heat input trials, an overlap ratio of 1 was observed to have the least variation in height with a standard deviation of 0.42 mm and an average range of 1.7 mm; however, lack of fusion defects were present in the top surface and the part cross section.

Hussein, Zaky↗
NASA NTRS1987

Absolute instability of the Gaussian wake profile

Linear parallel-flow stability theory has been used to investigate the effect of viscosity on the local absolute instability of a family of wake profiles with a Gaussian velocity distribution. The type of local instability, i.e., convective or absolute, is determined by the location of a branch-point singularity with zero group velocity of the complex dispersion relation for the instability waves. The effects of viscosity were found to be weak for values of the wake Reynolds number, based on the center-line velocity defect and the wake half-width, larger than about 400. Absolute instability occurs only for sufficiently large values of the center-line wake defect. The critical value of this parameter increases with decreasing wake Reynolds number, thereby indicating a shrinking region of absolute instability with decreasing wake Reynolds number. If backflow is not allowed, absolute instability does not occur for wake Reynolds numbers smaller than about 38.

Hultgren, Lennart S.↗
DOE OSTI2013

Defect formation in Cu(In,Ga)Se{sub 2} thin films due to the presence of potassium during growth by low temperature co-evaporation process

Doping the Cu(In,Ga)Se{sub 2} (CIGS) absorber layer with alkaline metals is necessary to process high efficiency solar cells. When growth of CIGS solar cells is performed on soda-lime glass (SLG), the alkaline elements naturally diffuse from the substrate into the absorber layer. On the other hand, when CIGS is grown on alkaline free substrates, the alkaline metals have to be added from another source. In the past, Na was believed to be the most important dopant of the alkaline elements, even though K was also observed to diffuse into CIGS from the SLG. Recently, the beneficial effect of a post deposition treatment with KF was pointed out and enabled the production of a 20.4% CIGS solar cell grown at low substrate temperature (<500 °C). However, possible negative effects of the presence or addition of the alkaline impurities during the low temperature growth process were observed for Na, but were not investigated for K so far. In this study, we investigate in detail the role of K on the defect formation in CIGS layers deposited at low temperature on alkaline free polyimide with intentional addition of K during selected time intervals of the CIGS layer growth. By means of admittance spectroscopy and deep level transient spectroscopy, we identify a deep minority carrier trap at around 280 meV below the conduction band E{sub C} in CIGS layers grown with K. Its influence on recombination and minority carrier lifetime in the absorber layer is investigated with external quantum efficiency measurements and time-resolved photoluminescence. Furthermore, to support the experimental findings device simulations were performed using the software SCAPS.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Orientation gradients in relation to grain boundaries at varying strain level and spatial resolution

The resolution dependence of orientation gradients was studied in a well-annealed 99.9995% pure polycrystalline copper pulled to failure in tension. Owing to the well developed neck, different regions in the sample correspond to different tensile strains. Post-mortem characterization was performed using EBSD on cross-sections containing the tensile axis. Kernel average misorientation (KAM) was calculated as a metric to establish correlation between defect accumulation and microstructural features, with a threshold of 5° to focus on intra-granular gradients. The region with the lowest strain (2%) showed high KAM values adjacent to grain boundaries compared to the grain interior, regardless of the point spacing, i.e. the spatial resolution. However, in the region with the highest strain (13%) a strong dependence on resolution was found. For point spacings of 0.5 μm or smaller, the same correlation of high KAM with locations near boundaries was found. At coarse spacings i.e. low spatial resolution, by contrast, the reverse was found in that the highest KAM values appear in the grain interiors, as previously observed in X-ray microscopy on the same sample which had a similar coarse resolution. An analysis of orientation gradients parallel to, and perpendicular to boundaries suggested that the latter tend to be the larger of the two. This helps to explain why boundary-adjacent points have low KAM values. The conclusion is that measurement of local orientation gradient requires a resolution that is comparable to the dislocation substructure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reconfiguring Plant Metabolism for Biodegradable Plastic Production

For decades, plants have been the subject of genetic engineering to synthesize novel, value-added compounds. Polyhydroxyalkanoates (PHAs), a large class of biodegradable biopolymers naturally synthesized in eubacteria, are among the novel products that have been introduced to make use of plant acetyl-CoA metabolic pathways. It was hoped that renewable PHA production would help address environmental issues associated with the accumulation of nondegradable plastic wastes. However, after three decades of effort synthesizing PHAs, and in particular the simplest form polyhydroxybutyrate (PHB), and seeking to improve their production in plants, it has proven very difficult to reach a commercially profitable rate in a normally growing plant. This seems to be due to the growth defects associated with PHA production and accumulation in plant cells. Here, we review major breakthroughs that have been made in plant-based PHA synthesis using traditional genetic engineering approaches and discuss challenges that have been encountered. Then, from the point of view of plant synthetic biology, we provide perspectives on reprograming plant acetyl-CoA pathways for PHA production, with the goal of maximizing PHA yield while minimizing growth inhibition. Specifically, we suggest genetic elements that can be considered in genetic circuit design, approaches for nuclear genome and plastome modification, and the use of multiomics and mathematical modeling in understanding and restructuring plant metabolic pathways.

59 BASIC BIOLOGICAL SCIENCES↗