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At least 1,783 records · Page 99

X-RAY SPECTRAL CUTOFF AND THE LACK OF HARD X-RAY EMISSION FROM TWO ULTRALUMINOUS X-RAY SOURCES M81 X-6 AND HOLMBERG IX X-1

We present broadband X-ray spectral study of two ultraluminous X-ray sources (ULXs), M81 X-6 and Holmberg IX X-1, based on Suzaku and XMM-Newton observations. We perform joint broadband spectral analysis of the brightest sources in the field, i.e., the two ULXs and the active galactic nucleus (AGN) in M81, and demonstrate that the X-ray spectra of the ULXs cut off at energies {approx}> 3 keV with negligible contribution at high energies in the Suzaku HXD/PIN band. The 90% upper limit on the 10-30 keV band luminosity of an underlying broadband power-law component is 3.5 Multiplication-Sign 10{sup 38} erg s{sup -1} for M81 X-6 and 1.2 Multiplication-Sign 10{sup 39} erg s{sup -1} for Holmberg IX X-1. These limits are more than an order of magnitude lower than the bolometric (0.1-30 keV) luminosity of 6.8 Multiplication-Sign 10{sup 39} erg s{sup -1} for M81 X-6 and 1.9 Multiplication-Sign 10{sup 40} erg s{sup -1} for Holmberg IX X-1. Our results confirm earlier indications of spectral cutoffs inferred from the XMM-Newton observations of bright ULXs and show that there is not an additional high-energy power-law component contributing significantly to the X-ray emission. The spectral form of the two ULXs are very different from those of Galactic black hole X-ray binaries (BHBs) or AGNs. This implies that the ULXs are neither simply scaled-up versions of stellar-mass BHBs nor scaled-down versions of AGNs.

79 ASTRONOMY AND ASTROPHYSICS↗

HARD X-RAY IMAGING OF INDIVIDUAL SPECTRAL COMPONENTS IN SOLAR FLARES

We present a new analytical technique, combining Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI) high-resolution imaging and spectroscopic observations, to visualize solar flare emission as a function of spectral component (e.g., isothermal temperature) rather than energy. This computationally inexpensive technique is applicable to all spatially invariant spectral forms and is useful for visualizing spectroscopically determined individual sources and placing them in context, e.g., comparing multiple isothermal sources with nonthermal emission locations. For example, while extreme ultraviolet images can usually be closely identified with narrow temperature ranges, due to the emission being primarily from spectral lines of specific ion species, X-ray images are dominated by continuum emission and therefore have a broad temperature response, making it difficult to identify sources of specific temperatures regardless of the energy band of the image. We combine RHESSI calibrated X-ray visibilities with spatially integrated spectral models including multiple isothermal components to effectively isolate the individual thermal sources from the combined emission and image them separately. We apply this technique to the 2002 July 23 X4.8 event studied in prior works, and image for the first time the super-hot and cooler thermal sources independently. The super-hot source is farther from the footpoints and more elongated throughout the impulsive phase, consistent with an in situ heating mechanism for the super-hot plasma.

79 ASTRONOMY AND ASTROPHYSICS↗

Bulk electronic structure of lanthanum hexaboride (LaB 6 ) by hard x-ray angle-resolved photoelectron spectroscopy

In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter, and for their applications in advanced technological fields. Among these compounds, LaB 6 has a special place, being a traditional d-band metal without additional f- bands. In order to understand the bulk electronic structure of the more complex rare-earth hexaborides, in this paper we investigate the bulk electronic structure of LaB 6 using tender/hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. Furthermore, we compare the La 3d core level spectrum to cluster model calculations in order to understand the bulk-like core-hole screening effects. The results show that the La 3d well-screened peak is at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. Here, we show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB6 determined by tender/hard x-ray angle-resolved photoemission spectroscopy (HARPES). We compare HARPES experimental results to the free-electron final-state calculations and to the more precise one-step photoemission theory including matrix element and phonon excitation effects. The agreement between the features present in the experimental ARPES data and the theoretical calculations is very good. In addition, we consider the nature and the magnitude of phonon excitations in order to interpret HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing, both experimentally and theoretically, true “bulk-like” electronic band structure of rare-earth hexaborides and strongly correlated materials.

36 MATERIALS SCIENCE↗

A Radiation-Hard 8-Channel 15-Bit 40-MSPS ADC for the ATLAS Liquid Argon Calorimeter Readout

The custom design of a radiation-hardened, 8-channel, 40-MSPS, 15-bit resolution, 14.2-bit dynamic range, 11.4-ENOB ADC data acquisition ASIC fabricated in a commercial 65-nm triple-well CMOS technology is presented. The ADC is developed for and integrates seamlessly into the readout system for the ATLAS liquid argon (LAr) calorimeter in the high-luminosity large hadron collider (HLLHC) upgrade at CERN, which will require a total of 364 936 ADC channels. A three-stage MDAC+SAR pipelined ADC architecture was designed to meet the physics requirements and scientific goals of the ATLAS experiment. The ADC is a fully self-contained data acquisition system that includes foreground calibration, digital data processing, digital control, and supporting circuitry. The measured performance shows the ADC achieves a competitive dynamic range and SNDR, and it meets or exceeds the ATLAS analog requirements. Radiation tolerance and scalability design considerations were implemented at the device-, circuit-, and system-level. Radiation-hardening-by-design techniques used include redundancy for digital circuits, the use of MiM capacitors, and a hybrid RC-DAC for the ADC core. The ADC ASIC was demonstrated to be robust against the effects of the intense radiation expected in the HL-LHC experimental environment.

DAQ↗

High resolution depth profiling using near-total-reflection hard x-ray photoelectron spectroscopy

By adjusting the incidence angle of incoming x rays near the critical angle of x-ray total reflection, photoelectron intensity is strongly modulated due to the variation of x-ray penetration depth. Photoelectron spectroscopy combined with near-total reflection exhibits tunable surface sensitivity, providing depth-resolved information. In this Review, we first describe the experimental setup and specific data analysis process. We then review three different examples that show the broad application of this method. Furthermore, the emphasis is on its applications correlated to oxide heterostructures, especially quantitative depth analyses of compositions and electronic states. In the last part, we discuss the limitations of this technique, mostly in terms of the range of samples that can be studied.

36 MATERIALS SCIENCE↗

Structure and Hardness of Ceramics Produced through High-Temperature Nitridation of Titanium Foil

We have studied the variation in the phase composition, elemental composition, and microstructure of rolled titanium samples during thermal annealing in a nitrogen atmosphere at 1300, 1500, 1700, and 2000°C. The results demonstrate that the nitridation process can yield compact titanium nitride-based ceramics or TiN/TiN{sub x}/α-Ti〈N〉 heterostructures. X-ray diffraction data for the near-surface region of the samples before and after nitridation and those for cross-sectional fracture surfaces of heterostructures are used to infer orientation relationships between the TiN phase and α-Ti〈N〉 solid solution. Scanning electron microscopy results for cross-sectional fracture surfaces indicate that complete nitridation of the samples leads to the formation of a three-layer microstructure.

36 MATERIALS SCIENCE↗

Curved focusing crystals for hard X-ray astronomy

A lens made by a properly arranged array of crystals can be used to focus x-rays of energy ranging from 30 to 500 keV for x-ray astronomy. Mosaic or curved crystals can be employed as x-ray optical elements. In this work self standing curved focusing Si and GaAs crystals in which the lattice bending is induced by a controlled damaging process on one side of planar crystals are characterized. Diffraction profiles in Laue geometry have been measured in crystals at x-ray energies E = 17, 59 and 120 keV. An enhancement of diffraction efficiency is found in asymmetric geometries.

36 MATERIALS SCIENCE↗

On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

Owing to the radiation-induced pronounced conductivity compensation in silicon carbide, carrier localization (trapping) prevails over recombination in capture of nonequilibrium carriers. This makes it possible, by raising the temperature, to reduce the time of carrier retention by a trapping center to values shorter than the duration of signal shaping by electronic circuits. For structural defects created by 6.5-MeV protons, the temperature excluding degradation of the detector signal via carrier localization is estimated. The values of the appearing generation current the noise of which can restrict the operation of a detector in the spectrometric mode are determined.

36 MATERIALS SCIENCE↗

Radiation hardness of n-GaN schottky diodes

Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

36 MATERIALS SCIENCE↗

Silicon PM Radiation Hardness

Detailed measurements have been made of 9 mm 2 SiPMs from Hamamatsu (MPPC) and Zecotek (MAPD) after room temperature annealing after exposure to fluences of 10 12 to 10 13 cm -2 . The data was used to complete the final ADR report.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Suzaku observations of moderately obscured (Compton-thin) active galactic nuclei selected by Swift/BAT hard X-ray survey

We report the results obtained by a systematic, broadband (0.5–150 keV) X-ray spectral analysis of moderately obscured (Compton-thin, 22⩽logN{sub H}<24) active galactic nuclei (AGNs) observed with Suzaku and Swift/Burst Alert Telescope (BAT). Our sample consists of 45 local AGNs at z<0.1 with logL{sub 14−195keV}>42 detected in the Swift/BAT 70-month survey, whose Suzaku archival data are available as of 2015 December. All spectra are uniformly fit with a baseline model composed of an absorbed cutoff power-law component, reflected emission accompanied by a narrow fluorescent iron-Kα line from cold matter (torus), and scattered emission. The main results based on the above analysis are as follows. (1) The photon index is correlated with Eddington ratio, but not with luminosity or black hole mass. (2) The ratio of the luminosity of the iron-Kα line to the X-ray luminosity an indicator of the covering fraction of the torus, shows significant anticorrelation with luminosity. (3) The averaged reflection strength derived from stacked spectra above 14 keV is larger in less luminous (logL{sub 10−50keV}⩽43.3, R=1.04{sub −0.19}{sup +0.17}) or highly obscured (logN{sub H}>23, R=1.03{sub −0.17}{sup +0.15}) AGNs than in more luminous (logL{sub 10−50keV}>43.3, R=0.46{sub −0.09}{sup +0.08}) or lightly obscured (logN{sub H}⩽23, R=0.59{sub −0.10}{sup +0.09}) objects. (4) The ratio of the luminosity of the [O IV] 25.89 μm line to the X-ray luminosity is significantly smaller in AGNs with lower soft X-ray scattering fractions, suggesting that the former luminosity underestimates the intrinsic power of an AGN buried in a torus of small opening angle.

79 ASTRONOMY AND ASTROPHYSICS↗

Rad hard technology tutorial

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radiation-hard radiation-tolerant microelectronics↗