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At least 1,783 records · Page 99

The unusual symmetry of hexafluoro-o-xylene—A microwave spectroscopy and computational study

The rotational constants and quartic centrifugal distortion coefficients of hexafluoro-o-xylene were precisely derived from the 8 GHz to 18 GHz gas phase microwave spectrum. In addition, the rotational constants of all singly substituted 13 C isotopologues were determined. Instead of the intuitively expected symmetry of C 2v , as in o-xylene, calculations with a variety of methods (B3LYP, CAM-B3LYP, ωB97XD, MP2, and coupled-cluster singles, doubles, and perturbative triples) predict a C 2 symmetry structure in which the two CF 3 groups rotate in opposite directions by about 16°. While the experimental results in this study are not capable of proving this unusual symmetry, they can support future microwave, gas phase electron diffraction or nuclear magnetic resonance studies. From the presented data, a preliminary r 0 structure was determined, reproducing the experimental rotational constants with deviations of no more than 15 kHz. Analysis of the interactions between the two CF 3 groups using an effective fragment potential approach identifies two major contributions to their interaction, due to exchange-repulsion and electrostatic repulsion, with electrostatic repulsion responsible for the barrier at the C 2v geometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical signaling in fungi: past and present challenges

Abstract Electrical signaling is a fundamental mechanism for integrating environmental stimuli and coordinating responses in living organisms. While extensively studied in animals and plants, the role of electrical signaling in fungi remains a largely underexplored field. Early studies suggested that filamentous fungi generate action potential-like signals and electrical currents at hyphal tips, yet their function in intracellular communication remained unclear. Renewed interest in fungal electrical activity has fueled developments such as the hypothesis that mycorrhizal networks facilitate electrical communication between plants and the emerging field of fungal-based electronic materials. Given their continuous plasma membrane, specialized septal pores, and insulating cell wall structures, filamentous fungi possess architectural features that could support electrical signaling over long distances. However, studying electrical phenomena in fungal networks presents unique challenges due to the microscopic dimensions of hyphae, the structural complexity of highly modular mycelial networks, and the limitations of traditional electrophysiological methods. This review synthesizes current evidence for electrical signaling in filamentous fungi, evaluates methodological approaches, and highlights experimental challenges. By addressing these challenges and identifying best practices, we aim to advance research in this field and provide a foundation for future studies exploring the role of electrical signaling in fungal biology.

Buffi, Matteo↗

High precision measurements of α 𝑠 at the future EIC

Here, we present a projection study for the first moments of the inclusive spin structure function ∫𝑔 1 ⁡(𝑥,𝑄 2 )𝑑𝑥 for the proton and neutron from simulated doubly-polarized $\overrightarrow{e}$ $⁢\overrightarrow{p}$ and $\overrightarrow{e}$ − $\overrightarrow{^{3}He}$ collision data expected from the Electron Ion Collider. For detection and extraction of the neutron spin asymmetries from $\overrightarrow{e}$ − $\overrightarrow{^{3}He}$ collisions, we used the double-tagging method which significantly reduces the uncertainty over the traditional inclusive method. Using the Bjorken Sum Rule, the projected results allow us to determine that the QCD coupling at the 𝑍-pole 𝛼 𝑠 ⁡(𝑀$^2_{Z^0}$) can be measured with a relative precision of 1.3%. This underscores the significance of the EIC for achieving precision determinations of 𝛼 𝑠 .

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Impedance and wakefield studies of the EIC RCS 591 MHz five-cell cavity

The Electron-Ion Collider (EIC) is a next-generation accelerator complex designed to enable high-luminosity collisions between highly polarized electrons and light ions (e.g., He-3). A central component of its Electron Injection System (EIS) is the Rapid Cycling Synchrotron (RCS), which accelerates a single 28 nC electron bunch from 750 MeV to 5, 10, or 18 GeV using an array of 591 MHz five-cell superconducting RF (SRF) cavities—eight at the current design stage. To ensure stable acceleration of high-charge bunches, we conducted detailed impedance and wakefield studies of the SRF cavity structure using both frequency- and time-domain methods. Wakefield solvers (ECHO3D, ECHO1D, CST), eigenmode analysis, and multi-particle tracking with ELEGANT were employed to evaluate longitudinal and transverse impedance effects and to determine instability thresholds. These studies provide critical input for the cavity design and operating parameters required to preserve beam quality and stability in the RCS.

Accelerator Physics↗

Ab Initio Computation of Charge Densities for Sn and Xe Isotopes

We present the first ab initio calculations for open-shell nuclei past the tin isotopic line, focusing on Xe isotopes as well as doubly magic Sn isotopes. We show that, even for moderately hard interactions, it is possible to obtain meaningful predictions and that the NNLO sat chiral interaction predicts radii and charge density distributions close to the experiment. We then make a new prediction for 100 Sn. This paves the way for ab initio studies of exotic charge density distributions at the limit of the present ab initio mass domain, where experimental data is becoming available. The present study closes the gap between the largest isotopes reachable by ab initio methods and the smallest exotic nuclei accessible to electron scattering experiments.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗

Study on Nanocellulose Properties Processed Using Different Methods and Their Aerogels

In this paper the effects of different mechanical methods including homogenization, ultrasonication and grinding on the properties of the nanocellulose materials and their aerogels, were investigated. The cellulose nanocrystal products, (CNC-H) and (CNC-U), were prepared by homogenization and ultrasonication of the acid hydrolyzed pulps, respectively. The aerogel products were produced by solvent exchanging of nanocellulose hydrogels with tertiary butyl alcohol and followed by freeze drying. The nanocellulose materials were studied using transmission electron microscopy, field emission scanning electron microscopy (FE-SEM), Fourier transformed infrared spectroscopy (TEM), X-ray diffraction (XRD), thermal gravimetric analysis (TGA). Size distribution and surface charges of the nanocellulose suspensions were measured by zetasizer. Also, the morphology, the porosity properties and surface area of the CNCs and CNF aerogels were investigated via FE-SEM and nitrogen adsorption–desorption isotherms. The results showed that CNC-H has higher surface charge, suspension stability (− 41.8 mV), crystallinity index (74.7%) and better size dispersion than CNC-U and CNF with an average particle size of 122 nm. CNC-H microstructures demonstrated homogeneous network structure with smaller nanometer dimensions (15–30 nm width and 60–400 nm length). However, the CNC-H showed lower thermal stability compared to CNC-U and CNF. Larger average pore size (16.32 nm), pore volume (0.42 cc/g) and high specific surface area (> 100 m{sup 2} g{sup −1}) in CNC-H aerogel were obtained. Graphical Abstract: Suspensions of nanocellulose (NC) were prepared by different mechanical methods: Homogenizing, Ultrasonic and grinding. The NC products were investigated and their differences in morphology and other characteristics were studied. The aerogels were prepared from the nanocellulose hydrogels. The nitrogen physisorption was used to study the pore characteristics of the aerogels. .

36 MATERIALS SCIENCE↗

Structural, Electrical, and Optical Properties of Single-Walled Carbon Nanotubes Synthesized through Floating Catalyst Chemical Vapor Deposition

Single-walled carbon nanotube (SWCNT) thin films were synthesized by using a floating catalyst chemical vapor deposition (FCCVD) method with a low flow rate (200 sccm) of mixed gases (Ar and H 2 ). SWCNT thin films with different thicknesses can be prepared by controlling the collection time of the SWCNTs on membrane filters. Transmission electron microscopy (TEM) showed that the SWCNTs formed bundles and that they had an average diameter of 1.46 nm. The Raman spectra of the SWCNT films suggested that the synthesized SWCNTs were very well crystallized. Although the electrical properties of SWCNTs have been widely studied so far, the Hall effect of SWCNTs has not been fully studied to explore the electrical characteristics of SWCNT thin films. In this research, Hall effect measurements have been performed to investigate the important electrical characteristics of SWCNTs, such as their carrier mobility, carrier density, Hall coefficient, conductivity, and sheet resistance. The samples with transmittance between 95 and 43% showed a high carrier density of 10 21– 10 23 cm –3 . The SWCNTs were also treated using Brønsted acids (HCl, HNO 3 , H 2 SO 4 ) to enhance their electrical properties. After the acid treatments, the samples maintained their p-type nature. The carrier mobility and conductivity increased, and the sheet resistance decreased for all treated samples. The highest mobility of 1.5 cm 2 /Vs was obtained with the sulfuric acid treatment at 80 °C, while the highest conductivity (30,720 S/m) and lowest sheet resistance (43 ohm/square) were achieved with the nitric acid treatment at room temperature. Different functional groups were identified in our synthesized SWCNTs before and after the acid treatments using Fourier-Transform Infrared Spectroscopy (FTIR).

36 MATERIALS SCIENCE↗

Effect of strain rate on the deformation of hollow CoS nanoboxes and doubly porous self-assembled films

Nanomaterials with multiscale porosity are attractive as lightweight structural materials because unique deformation mechanisms can be programmed at different length scales. Here, we explore this concept by investigating the mechanics of hollow nanoboxes, as well as films self-assembled from nanoboxes. Hollow CoS nanoboxes with lengths of 900 nm and <30 nm wall thickness are synthesized using colloidal methods. Individual nanoboxes are compressed inside a scanning electron microscope at strain rates of 0.001 s –1 , 0.01 s –1 , and 0.1 s –1 . Nanoboxes are found to have a first peak stress of 15 MPa and loading modulus of ~240 MPa regardless of strain rate. The nanoboxes deform through ductile, plastic bending of side walls at 0.001 s –1 strain rate, while brittle fracture occurs at the higher strain rates. Self-assembly of these nanoboxes results in films with relative density of <0.1. Nanoindentation shows strain rate independent behavior with average modulus and hardness of ~15 MPa and ~230 kPa, respectively. Furthermore, the mechanical behavior of the film is compared to that of the nanobox building blocks, cellular foams and granular materials.

36 MATERIALS SCIENCE↗

Atomically Dispersed Copper Sites in a Metal–Organic Framework for Reduction of Nitrogen Dioxide

Metal-organic framework (MOF) materials provide an excellent platform to fabricate single-atom catalysts due to their structural diversity, intrinsic porosity, and designable functionality. However, the unambiguous identification of atomically dispersed metal sites and the elucidation of their role in catalysis are challenging due to limited methods of characterization and lack of direct structural information. Here, we report a comprehensive investigation of the structure and the role of atomically dispersed copper sites in UiO-66 for the catalytic reduction of NO 2 at ambient temperature. The atomic dispersion of copper sites on UiO-66 is confirmed by high-angle annular dark-field scanning transmission electron microscopy, electron paramagnetic resonance spectroscopy, and inelastic neutron scattering, and their location is identified by neutron powder diffraction and solid-state nuclear magnetic resonance spectroscopy. The Cu/UiO-66 catalyst exhibits superior catalytic performance for the reduction of NO 2 at 25 °C without the use of reductants. A selectivity of 88% for the formation of N2 at a 97% conversion of NO 2 with a lifetime of >50 h and an unprecedented turnover frequency of 6.1 h-1 is achieved under nonthermal plasma activation. In situ and operando infrared, solid-state NMR, and EPR spectroscopy reveal the critical role of copper sites in the adsorption and activation of NO 2 molecules, with the formation of {Cu(I)···NO} and {Cu···NO 2 } adducts promoting the conversion of NO 2 to N 2 . This study will inspire the further design and study of new efficient single-atom catalysts for NO 2 abatement via detailed unravelling of their role in catalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Epitaxial strain tuning of Er 3+ in ferroelectric thin films

Er 3+ color centers are promising candidates for quantum science and technology due to their long electron and nuclear spin coherence times, as well as their desirable emission wavelength. By selecting host materials with suitable, controllable properties, we introduce new parameters that can be used to tailor the Er 3+ emission spectrum. PbTiO 3 is a well-studied ferroelectric material with known methods of engineering different domain configurations through epitaxial strain. By distorting the structure of Er 3+ -doped PbTiO 3 thin films, we can manipulate the crystal fields around the Er 3+ dopant. This is resolved through changes in the Er 3+ resonant fluorescence spectra, tying the optical properties of the defect directly to the domain configurations of the ferroelectic matrix. Additionally, we are able to resolve a second set of peaks for films with in-plane ferroelectric polarization. We hypothesize these results to be due to either the Er 3+ substituting different sites of the PbTiO 3 crystal, differences in charges between the Er 3+ dopant and the original substituent ion, or selection rules. Systematically studying the relationship between the Er 3+ emission and the epitaxial strain of the ferroelectric matrix lays the pathway for future optical studies of spin manipulation by altering ferroelectric order parameters.

36 MATERIALS SCIENCE↗

Radiative capture rates at deep defects from electronic structure calculations

We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:VGa-TeAs and GaN:CN, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients.

36 MATERIALS SCIENCE↗

Advancements in NbTiN based circuits for Superconducting Digital Logic

Superconducting (SC) electronics have emerged as a promising platform for high-speed, energy-efficient computing and quantum information processing. This work, centered on NbTiN, presents recent advances in material science and fabrication methods leading to significant improvements in performance, scalability and vertical integration. We specifically report on fabrication and characterization of key components, including Josephson junctions (JJs), flux trapping structures and SC interconnects. Together, these efforts represent critical steps towards realizing practical, complex, dense and large-scale SC integrated circuits.

Pokhrel, A. [Imec,Heverlee,Belgium]↗

Importance of Electron Correlation on the Geometry and Electronic Structure of [2Fe–2S] Systems: A Benchmark Study of the [Fe 2 S 2 (SCH 3 ) 4 ] 2–,3–,4– , [Fe 2 S 2 (SCys) 4 ] 2– , [Fe 2 S 2 (S- p -tol) 4 ] 2– , and [Fe 2 S 2 (S- o -xyl) 4 ] 2– Complexes

Iron–sulfur clusters are crucial for biological electron transport and catalysis. Obtaining accurate geometries, energetics, manifolds of their excited electronic states, and reduction energies is important to understand their role in these processes. Here, using a [2Fe–2S] model complex with Fe II and Fe III oxidation states, which leads to different charges, i.e., [Fe 2 S 2 (SMe) 4 ] 2–,3–,4– , we benchmarked a variety of computational methodologies ranging from density functional theory (DFT) to post-Hartree–Fock methods, including complete active space self-consistent field (CASSCF), multireference configuration interaction, the second-order N-electron valence state perturbation theory (NEVPT2), and the linearized integrand approximation of adiabatic connection (AC0) approaches. Additionally, we studied three experimentally well-characterized complexes, [Fe 2 S 2 (SCys) 4 ] 2– , [Fe 2 S 2 (S-o-tol) 4 ] 2– , and [Fe 2 S 2 (S-o-xyl) 4 ] 2– , via DFT methods. We conclude that the dynamic electron correlation is important for accurately predicting the geometry of these complexes. Broken symmetry (BS) DFT correctly predicts experimental geometries of low-spin multiplicity, while CASSCF does not. However, BS-DFT significantly overestimates the difference between the low- and high-spin electronic states for a given oxidation state. At the same time, CASSCF underestimates it but provides relative energies closer to the reference NEVPT2 results. Finally, AC0 provides energetics of NEVPT2 quality with the additional advantage of being able to use large CASSCF sizes. NEVPT2 gives the best estimates of the Fe III /Fe III → Fe II /Fe III (4.27 eV) and Fe II /F III → Fe II /F II (7.72 eV) reduction energies. The results provide insight into the electronic structure of these complexes and assist in the understanding of their physical properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimizing the orbital occupation in the multiple minima problem of magnetic materials from the metaheuristic firefly algorithm

Here, we present the use and implementation of the firefly algorithm to help in scanning the multiple metastable minima of orbital occupations in density functional theory (DFT) plus Hubbard U correction and to identify the ground state occupations in strongly correlated materials. We show the application of this implementation with the Abinit code on KCoF 3 and UO 2 crystals, which are typical d and f electron systems with numerous occupation minima. We demonstrate the validity and performance of the method by comparing with previous methodologies. The method is general and can be applied to any code using constrained occupation matrices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Accelerating self-consistent field iterations in Kohn-Sham density functional theory using a low-rank approximation of the dielectric matrix

We present an efficient preconditioning technique for accelerating the fixed-point iteration in real-space Kohn-Sham density functional theory (DFT) calculations. The preconditioner uses a low-rank approximation of the dielectric matrix (LRDM) based on Gâteaux derivatives of the residual of fixed-point iteration along appropriately chosen direction functions. We develop a computationally efficient method to evaluate these Gâteaux derivatives in conjunction with the Chebyshev filtered subspace iteration procedure, an approach widely used in large-scale Kohn-Sham DFT calculations. Further, we propose a variant of LRDM preconditioner based on adaptive accumulation of low-rank approximations from previous self-consistent field iterations, and also extend the LRDM preconditioner to spin-polarized Kohn-Sham DFT calculations. We demonstrate the robustness and efficiency of the LRDM preconditioner against other widely used preconditioners on a range of benchmark systems with sizes ranging from ~100 to 1100 atoms (~500–20,000 electrons). The benchmark systems include various combinations of metal-insulating-semiconducting heterogeneous material systems, nanoparticles with localized d orbitals near the Fermi energy, nanofilm with metal dopants, and magnetic systems. In all benchmark systems, the LRDM preconditioner converges robustly within 20–30 iterations. In contrast, other widely used preconditioners show slow convergence in many cases, as well as divergence of the fixed-point iteration in some cases. Lastly, we demonstrate the computational efficiency afforded by the LRDM method, with up to 3.4-fold reduction in computational cost for the total ground-state calculation compared to other preconditioners.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

In this work, steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ~10× increase in the near-midgap Ec – 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously. A photoelectrochemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2× reduction in the density of Ec – 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries.

36 MATERIALS SCIENCE↗