Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “TEMPERATURE DEPENDENCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,783 records · Page 99
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO{sub 3}

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO{sub 3} over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Néel transition at T{sub N} ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below T{sub N}. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near T{sub N}. An additional phonon anomaly was identified at T{sup *} ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman frequencies between T{sub N} and T{sup *} suggest competing WFM and AFM interactions. A close match between the phonon frequency of B{sub 3g} (3)-octahedral rotation mode with the square of sublattice magnetization between T{sub N} and T{sup *} is indicative of the presence of spin-phonon coupling in multiferroic YCrO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, I{sub s}, and barrier height, Φ{sub b}, were not noticeable after the irradiation. However, the series resistance, R{sub s}, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Percolative phase transition in few-layered MoSe 2 field-effect transistors using Co and Cr contacts

The metal-to-insulator phase transition (MIT) in two-dimensional (2D) materials under the influence of a gating electric field has revealed interesting electronic behavior and the need for a deeper fundamental understanding of electron transport processes, while attracting much interest in the development of next-generation electronic and optoelectronic devices. Although the mechanism of the MIT in 2D semiconductors is a topic under debate in condensed matter physics, our work demonstrates the tunable percolative phase transition in few-layered MoSe 2 field-effect transistors (FETs) using different metallic contact materials. Here, we attempted to understand the MIT through temperature-dependent electronic transport measurements by tuning the carrier density in a MoSe 2 channel under the influence of an applied gate voltage. In particular, we have examined this phenomenon using the conventional chromium (Cr) and ferromagnetic cobalt (Co) as two metal contacts. For both Cr and Co, our devices demonstrated n-type behavior with a room-temperature field-effect mobility of 16 cm 2 V −1 s −1 for the device with Cr-contacts and 92 cm 2 V −1 s −1 for the device with Co-contacts, respectively. Further, with low temperature measurements at 50 K, the mobilities increased significantly to 65 cm 2 V −1 s −1 for the device with Cr and 394 cm 2 V −1 s −1 for the device with Co-contacts. By fitting our experimental data to the percolative phase transition theory, the temperature-dependent conductivity data show a transition from an insulating-to-metallic behavior at a bias of ∼28 V for Cr-contacts and ∼20 V for Co-contacts. This cross-over of the conductivity can be attributed to an increase in carrier density as a function of the gate bias in temperature-dependent transfer characteristics. By extracting the critical exponents, we find that the transport behavior in the device with Co-contacts aligns closely with the 2D percolation theory. In contrast, the devices with Cr-contacts deviate significantly from the 2D limit at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Observation of seasonal variations of the flux of high-energy atmospheric neutrinos with IceCube

Atmospheric muon neutrinos are produced by meson decays in cosmic-ray-induced air showers. The flux depends on meteorological quantities such as the air temperature, which affects the density of air. Competition between decay and re-interaction of those mesons in the first particle production generations gives rise to a higher neutrino flux when the air density in the stratosphere is lower, corresponding to a higher temperature. A measurement of a temperature dependence of the atmospheric νμ flux provides a novel method for constraining hadronic interaction models of air showers. It is particularly sensitive to the production of kaons. Studying this temperature dependence for the first time requires a large sample of high-energy neutrinos as well as a detailed understanding of atmospheric properties. We report the significant (> 10 σ) observation of a correlation between the rate of more than 260,000 neutrinos, detected by IceCube between 2012 and 2018, and atmospheric tem peratures of the stratosphere, measured by the Atmospheric Infrared Sounder (AIRS) instrument aboard NASA’s AQUA satellite. For the observed 10% seasonal change of effective atmospheric temperature we measure a 3.5(3)% change in the muon neutrino flux. This observed correlation deviates by about 2-3 standard deviations from the expected correla tion of 4.3% as obtained from theoretical predictions under the assumption of various hadronic interaction models.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2003

Vertical Electron Transport through PbS-EuS Structures

Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.

Wrotek, S.↗
DOE OSTI2025

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electron scattering in the Δ{sub 1} model of the conduction band of germanium single crystals

Electron scattering in the possible Δ{sub 1} models of the conduction band in germanium crystals formed by hydrostatic or uniaxial pressure is investigated. On the basis of the theory of anisotropic scattering, the temperature dependences of the anisotropy parameter of the relaxation times and electron mobility for these models under conditions of scattering at impurity ions, as well as at acoustic and intervalley phonons are obtained. Analysis of the temperature dependences indicates that, in the temperature range of 77–300 K, intervalley scattering becomes substantial. Only for the Δ{sub 1} model formed by uniaxial pressure along the crystallographic direction [100], the electron scattering at intervalley phonons, which correspond to the g transitions, is minor with respect to scattering at acoustic phonons (the intravalley scattering) and impurity ions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

X-ray continuum as a measure of pressure and fuel–shell mix in compressed isobaric hydrogen implosion cores

Pressure, by definition, characterizes the conditions within an isobaric implosion core at peak compression [Gus'kov et al., Nucl. Fusion 16, 957 (1976); Betti et al., Phys. Plasmas 8, 5257 (2001)] and is a key parameter in quantifying its near-ignition performance [Lawson, Proc. Phys. Soc. London, B 70, 6 (1957); Betti et al., Phys. Plasmas 17, 058102 (2010); Goncharov et al., Phys. Plasmas 21, 056315 (2014); and Glenzer et al., Phys. Plasmas 19, 056318 (2012)]. At high spectral energy, where the x-ray emission from an imploded hydrogen core is optically thin, the emissivity profile can be inferred from the spatially resolved core emission. This emissivity, which can be modeled accurately under hot-core conditions, is dependent almost entirely on the pressure when measured within a restricted spectral range matched to the temperature range anticipated for the emitting volume. In this way, the hot core pressure at the time of peak emission can be inferred from the measured free-free emissivity profile. The pressure and temperature dependences of the x-ray emissivity and the neutron-production rate explain a simple scaling of the total filtered x-ray emission as a constant power of the total neutron yield for implosions of targets of similar design over a broad range of shell implosion isentropes. This scaling behavior has been seen in implosion simulations and is confirmed by measurements of high-isentrope implosions [Sangster et al., Phys. Plasmas 20, 056317 (2013)] on the OMEGA laser system [Boehly et al., Opt. Commun. 133, 495 (1997)]. Attributing the excess emission from less-stable, low-isentrope implosions, above the level expected from this neutron-yield scaling, to the higher emissivity of shell carbon mixed into the implosion's central hot spot, the hot-spot “fuel–shell” mix mass can be inferred.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2010

Axion cosmology revisited

The misalignment mechanism for axion production depends on the temperature-dependent axion mass. The latter has recently been determined within the interacting instanton liquid model, and provides for the first time a well-motivated axion mass for all temperatures. We reexamine the constraints placed on the axion parameter space in the light of this new mass function. Taking this mass at face value, we find an accurate and updated constraint f{sub a{<=}}2.8({+-}2)x10{sup 11} GeV or m{sub a{>=}}21({+-}2) {mu}eV from the misalignment mechanism in the classic axion window (thermal scenario). However, this is superseded by axion string radiation which leads to f{sub a} < or approx. 3.2{sub -2}{sup +4}x10{sup 10} GeV or m{sub a} > or approx. 0.20{sub -0.1}{sup +0.2} meV. In this analysis, we take care to precisely compute the effective degrees of freedom and, to fill a gap in the literature, we present accurate fitting formulas. We solve the evolution equations exactly, and find that analytic results used to date generally underestimate the full numerical solution by a factor 2-3. In the inflationary scenario, axions induce isocurvature fluctuations and constrain the allowed inflationary scale H{sub I}. Taking anharmonic effects into account, we show that these bounds are actually weaker than previously computed. Considering the fine-tuning issue of the misalignment angle in the whole of the anthropic window, we derive new bounds which open up the inflationary window near {theta}{sub a{yields}{pi}}. In particular, we find that inflationary dark matter axions can have masses as high as 0.01-1 meV, covering the whole thermal axion range, with values of H{sub I} up to 10{sup 9} GeV. Quantum fluctuations during inflation exclude dominant dark matter axions with masses above m{sub a} < or approx. 1 meV.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Modeling laser interactions with aluminum and tantalum targets using a hybrid atomistic-continuum model

A hybrid atomistic-continuum method can model the microstructure evolution of metals subjected to laser irradiation. This method combines classical molecular dynamics (MD) simulations with the two-temperature model (TTM) to account for the laser energy absorption and heat diffusion behavior. Accurate prediction of the temperature evolution in the combined MD-TTM method requires reliable accuracy in electron heat capacity, electron thermal conductivity, and electron–phonon coupling factor across the temperatures generated. This study uses the electronic density of states (DOS) obtained from first-principle calculations. The calculated electron temperature-dependent parameters are used in MD-TTM simulations to study the laser metal interactions in FCC and BCC metals and the phenomenon of laser shock loading and melting. This study uses FCC Al and BCC Ta as model systems to demonstrate this capability. When subjected to short pulsed laser shocks, the dynamic failure behavior predicted using temperature-dependent parameters is compared with the experimentally reported single-crystal and nanocrystalline Al and Ta systems. The MD-TTM simulations also investigate laser ablation and melting behavior of Ta to compare with the ablation threshold reported experimentally. In conclusion, this manuscript demonstrates that integrating the temperature-dependent parameters into MD-TTM simulations leads to the accurate modeling of the laser–metal interaction and allows the prediction of the kinetics of the solid–liquid interface.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

Methylammonium lead iodide perovskite has attracted considerable recent interest for solution processable solar cells and other optoelectronic applications. The orthorhombic-to-tetragonal phase transition in perovskite can significantly alter its optical, electrical properties and impact the corresponding applications. Here, we report a systematic investigation of the size-dependent orthorhombic-to-tetragonal phase transition using a combined temperature-dependent optical, electrical transport and transmission electron microscopy study. Our studies of individual perovskite microplates with variable thicknesses demonstrate that the phase transition temperature decreases with reducing microplate thickness. The sudden decrease of mobility around phase transition temperature and the presence of hysteresis loops in the temperature-dependent mobility confirm that the orthorhombic-to-tetragonal phase transition is a first-order phase transition. Lastly, our findings offer significant fundamental insight on the temperature-and size-dependent structural, optical and charge transport properties of perovskite materials, and can greatly impact future exploration of novel electronic and optoelectronic devices from these materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p-type Hg{sub 1– x}Cd{sub x}Te epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.

36 MATERIALS SCIENCE↗
DOE OSTI2012

The de Haas-van Alphen effect in nanostructures of cadmium fluoride

Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, which are represented by an ultranarrow p-type CdF{sub 2} quantum well confined by {delta} barriers heavily doped with boron on the surface of an n-type CdF{sub 2} crystal. The temperature dependences of the de Haasvan Alphen oscillation amplitudes indicate a small value of the effective mass of two-dimensional holes, as a result of which, the strong field assumption, {mu}B Much-Greater-Than 1, is fulfilled at high temperatures. It is for the first time that a periodic variation in the de Haas-van Alphen oscillation frequency is detected and is accompanied by a diamagnetic response as temperature is increased. This phenomenon manifests itself as synchronous temperature oscillations of the density and effective mass of two-dimensional holes as a result of the mesoscopic properties of {delta} barriers.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Beta processes in a high-temperature field and nuclear multibeta decays

Sources of the temperature dependence of rates of nuclear beta processes in matter of massive stars are systematized. Electron and positron beta decays and electron capture (K capture and the capture of unbound electrons) fromexcited nuclear states (thermal decays) are considered along with the photobeta decays from ground and excited nuclear states. The possible quantum degeneracy of an electron gas in matter and the degree of ionization of an atomic K shell in a high-temperature field are taken into account. For a number of multidecay odd-nuclei, the temperature dependences of the ratios of the total rates of their {beta}{sup -} decays to the sum of the total rates over all of decay modes for the same nuclei are calculated in the range of nuclear temperature from 2 to 3 Multiplication-Sign 10{sup 9} K. It is shown that the deviation of this ratio from the experimental value obtained at 'normal' temperature may be quite sizable. This circumstance should be taken into account in models that consider the problem of synthesis of nuclei in matter of massive stars.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Effect of Isovalent Cation Substitution on the Thermal, Caloric, and Magnetocaloric Properties of the (La{sub 1 –} {sub y}Eu{sub y}){sub 0.7}Pb{sub 0.3}MnO{sub 3} Manganites

Crystalline samples of the (La{sub 1 –} {sub y}Eu{sub y}){sub 0.7}Pb{sub 0.3}MnO{sub 3} (y = 0, 0.2, 0.4, 0.5, 0.6, and 0.8) manganite solid solutions have been grown. Temperature dependences of the specific heat, thermal expansion, and high-intensity magnetocaloric effect have been investigated. A comparative analysis of the effect of isovalent cationic substitution on the thermal and caloric parameters of the ferromagnetic phase transition has been made. It has been shown that the growth of the Eu atom concentration leads to a decrease in the phase transition entropy and an increase in the baric coefficient dT/dp. Field and temperature dependences of the magnetocaloric effect have been established. It is demonstrated that, varying the ratio of cations, one can obtain the solid solutions with the maximum magnetocaloric effect value in fields of up to 6 kOe in a temperature range of 90–340 K. Owing to the similar reduced relative cooling powers, the investigated solid solutions can be used as reference solid-state cooling media in designing the cascade cooling systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Methods and apparatus for cooling electronics

Methods and apparatus are provided for choosing an energy-efficient coolant temperature for electronics by considering the temperature dependence of the electronics' power dissipation. This dependence is explicitly considered in selecting the coolant temperature T.sub.0 that is sent to the equipment. To minimize power consumption P.sub.Total for the entire system, where P.sub.Total=P.sub.0+P.sub.Cool is the sum of the electronic equipment's power consumption P.sub.0 plus the cooling equipment's power consumption P.sub.Cool, P.sub.Total is obtained experimentally, by measuring P.sub.0 and P.sub.Cool, as a function of three parameters: coolant temperature T.sub.0; weather-related temperature T.sub.3 that affects the performance of free-cooling equipment; and computational state C of the electronic equipment, which affects the temperature dependence of its power consumption. This experiment provides, for each possible combination of T.sub.3 and C, the value T.sub.0* of T.sub.0 that minimizes P.sub.Total. During operation, for any combination of T.sub.3 and C that occurs, the corresponding optimal coolant temperature T.sub.0* is selected, and the cooling equipment is commanded to produce it.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

Phase transition, crystal water and low thermal expansion behavior of Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12}·n(H{sub 2}O)

Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} for 0≤x≤1.0 are synthesized to reduce the phase transition temperature of Al{sub 2}W{sub 3}O{sub 12}. It is found that the incorporation of (ZrMg){sup 6+} into the lattice of Al{sub 2}W{sub 3}O{sub 12} not only reduces its orthorhombic-to-monoclinic phase transition temperature but also elevates its softening temperature, broadening its applicable temperature range considerably. Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} with x<0.5 exhibit low coefficients of thermal expansion (CTEs) and non-hygroscopicity, while those for x≥0.7 are obviously hygroscopic and the CETs decrease with increasing the content of (ZrMg){sup 6+} so that Al{sub 0.2}(ZrMg){sub 0.9}W{sub 3}O{sub 12} and ZrMgW{sub 3}O{sub 12} exhibit negative thermal expansion. Temperature-dependent Raman spectroscopic study shows the hardening of W–O bonds above 373 K which is attributed to the release of crystal water. The effect of crystal water on the thermal expansion property is discussed based on the hydrogen bond between H in crystal water and electronegative O in Al(ZrMg)–O–W linkages. - Graphical abstract: (a and b) Temperature dependent Raman spectra of Al{sub 2−x}(ZrMg){sub x}W{sub 3}O{sub 12} (x=0.1, 0.2), (c and d) Building block of a unit cell of Al{sub 2−x}(ZrMg){sub x}W{sub 3}O{sub 12}·n(H{sub 2}O) and schematic showing the effect of crystal water on Al(Zr, Mg)–O–W linkages. - Highlights: • (ZrMg){sup 6+} reduces orthorhombic-to-monoclinic phase transition of Al{sub 2}W{sub 3}O{sub 12}. • The incorporation of (ZrMg){sup 6+} elevates the softening temperature of Al{sub 2}W{sub 3}O{sub 12}. • Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} (x<0.5) exhibit low CTEs and non-hygroscopicity. • Al{sub 0.2}(ZrMg){sub 0.9}W{sub 3}O{sub 12}·0.8H{sub 2}O and ZrMgW{sub 3}O{sub 12}·2H{sub 2}O present NTE. • Hydrogen bond between H in H{sub 2}O and O in Al(ZrMg)–O–W affects thermal expansion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗