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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,783 records · Page 99
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DOE OSTI2017

Enhanced room-temperature spin Seebeck effect in a YIG/C 60 /Pt layered heterostructure

We report on large enhancement of the longitudinal spin Seebeck effect (LSSE) in the Y 3 Fe 5 O 12 (YIG)/Pt system at room temperature due to the addition of a thin layer of organic semiconductor (C 60 ) in between the YIG and the Pt. LSSE measurements show that the LSSE voltage increases significantly, from the initial value of 150 nV for the YIG/Pt structure to 240 nV for the YIG/C 60 (5nm)/Pt structure. Radio-frequency transverse susceptibility experiments reveal a significant decrease in the surface perpendicular magnetic anisotropy (PMA) of the YIG film when C 60 is deposited on it. These results suggest that the LSSE enhancement may be attributed to increased spin mixing conductance, the decreased PMA, and the large spin diffusion length of C 60 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Reversible magnetic logic gates based on spin wave interference

We propose and develop reversible magnetic logic gates based on spin wave interference. The gates consist of passive elements including spin waveguides, cross-junctions, and phase shifters. Logic 0 and 1 are encoded in the phase of the propagating spin wave (0 or $π$). There are different possible input-output trajectories for the propagating spin waves, where some of the trajectories contain phase shifters and others do not. In each case, the particular input-output trajectory and the resultant output phase depend on the input phase combination. The redirection takes place in the cross junctions. Two waves coming to a junction in-phase propagate through the junction without reflection. In contrast, two waves coming to a junction out-of-phase are completely reflected back. The process of redirection is illustrated by numerical modeling of a nanometer-scale junction comprising two chains of spins, which operates at zero temperature. We also present experimental data on spin wave redirection in a micrometer-size cross junction made of Y 3 Fe 2 (FeO 4 ) 3 operating at room temperature. Our results demonstrate a prominent spin wave redirection, where the ratio of the transmitted power between the in-phase and out-of-phase cases exceeds 45 dB at room temperature. Based on these experimental data, we estimate the energy per operation in spin wave reversible logic circuits. The proposed reversible gates may provide a route to magnetic logic circuitry with power dissipation less than $kT$ per operation.

42 ENGINEERING↗
DOE OSTI2017

Sputtering growth of Y 3 Fe 5 O 12 /Pt bilayers and spin transfer at Y 3 Fe 5 O 12 /Pt interfaces

For the majority of previous work on Y 3 Fe 5 O 12 (YIG)/normal metal (NM) bi-layered structures, the YIG layers were grown on Gd 3 Ga 5 O 12 first and were then capped by an NM layer. This work demonstrates the sputtering growth of a Pt/YIG structure where the Pt layer was grown first and the YIG layer was then deposited on the top. The YIG layer shows well-oriented (111) texture, a surface roughness of 0.15 nm, and an effective Gilbert damping constant less than 4.7 × 10 -4 , and the YIG/Pt interface allows for efficient spin transfers. This demonstration indicates the feasibility of fabricating high-quality NM/YIG/NM tri-layered structures for new physics studies.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nonreciprocity of backward volume spin wave beams excited by the curved focusing transducer

The focusing effect for spin waves excited by a curved micrometer-sized coplanar waveguide transducer on top of a 5-μm-thick epitaxial yttrium iron garnet film is studied by means of the micro-focused Mandelstam-Brillouin light scattering technique and micromagnetic simulations. The curvilinear transducer is designed to focus the backward volume spin waves on the in-plane bias magnetic field applied along the symmetry axis of the transducer. We show that two-dimensional maps of spin wave intensity exhibit nonreciprocal properties without mirror symmetry with respect to the magnetic field direction and the focusing effect. The observed effects are the consequence of nonreciprocity of the backward volume spin waves travelling at an angle toward the bias field direction.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

First harmonic measurements of the spin Seebeck effect

We present measurements of the spin Seebeck effect (SSE) by a technique that combines alternating currents (AC) and direct currents (DC). The method is applied to a ferrimagnetic insulator/heavy metal bilayer, Y 3 Fe 5 O 12 (YIG)/Pt. Typically, SSE measurements use an AC current to produce an alternating temperature gradient and measure the voltage generated by the inverse spin-Hall effect in the heavy metal at twice the AC frequency. Here, we show that when Joule heating is associated with AC and DC bias currents, the SSE response occurs at the frequency of the AC current drive and can be larger than the second harmonic SSE response. We compare the first and second harmonic responses and show that they are consistent with the SSE. The field dependence of the voltage response is used to distinguish between the damping-like and field-like torques. This method can be used to explore nonlinear thermoelectric effects and spin dynamics induced by temperature gradients.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Nonvolatile voltage controlled molecular spin state switching

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. Here, the result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Comparing the anomalous Hall effect and the magneto-optical Kerr effect through antiferromagnetic phase transitions in Mn 3 Sn

In the non-collinear antiferromagnet Mn 3 Sn, we compare simultaneous measurements of the anomalous Hall effect (AHE) and the magneto-optical Kerr effect (MOKE) through two magnetic phase transitions: the high-temperature paramagnetic/antiferromagnetic (AF) phase transition at the Néel temperature ( T N ≈ 420 K) and a lower-temperature incommensurate magnetic ordering at T 1 ≈ 270 K. While both the AHE and MOKE are sensitive to the same underlying symmetries of the AF non-collinear spin order, we find that the transition temperatures measured by these two techniques unexpectedly differ by approximately 10 K. Moreover, the applied magnetic field at which the AF order reverses is significantly larger when measured by MOKE than when measured by AHE. Furthermore these results point to a difference between the bulk and surface magnetic properties of Mn 3 Sn.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Systematic control of strain-induced perpendicular magnetic anisotropy in epitaxial europium and terbium iron garnet thin films

We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu 3 Fe 5 O 12 (EuIG) and Tb 3 Fe 5 O 12 (TbIG) thin films grown by pulsed-laser deposition on Gd 3 Ga 5 O 12 with (001) and (111) orientations, respectively. The PMA field is determined by measuring the induced anomalous Hall loops in Pt deposited on the garnet films. Due to positive magnetostriction constants, compressive in-plane strain induces a PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nm thick TbIG at 300 K and relaxes extremely slowly as the garnet film thickness increases. In bilayers consisting of Pt and EuIG or Pt and TbIG, robust PMA is revealed by squared anomalous Hall hysteresis loops in Pt, the magnitude of which appears to be only related to the net magnetic moment of iron sublattices. Furthermore, the magnetostriction constant is found to be 2.7 × 10 -5 for EuIG and 1.35 × 10 -5 for TbIG, comparable with the values for bulk crystals. Our results demonstrate a general approach of tailoring magnetic anisotropy of rare earth iron garnets by utilizing modulated strain via epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Direct observation of proximity-induced magnetism and spin reorientation in topological insulator on a ferrimagnetic oxide

The quantum anomalous Hall effect (QAHE) in a magnetic topological insulator system without the need of an external magnetic field becomes of great interest because of its dissipationless spin currents. The proximity effect via a magnetic adlayer is a promising strategy to bring magnetism into a topological insulator (TI) due to its boosted Curie temperature for a realistic application. In this work, a proximity-induced magnetism above 90 K in a TI, (Bi 0.25 Sb 0.75 ) 2 Te 3 , on a ferrimagnetic adlayer with perpendicular magnetic anisotropy, thulium-iron-garnet (TIG), was evidenced directly by using magnetic circular dichroism. A competition between exchange couplings with different sublattice-sites was further revealed element-specifically in a temperature-driven spin-reorientation of TI, bringing an issue on magnetic inhomogeneity at the interface, which might cause difficulties in obtaining QAHE in such a TI/TIG bilayer system. Our results prove directly the robust magnetism of TI above liquid nitrogen temperatures and also give a deep insight into the mechanism of interfacial coupling in the proximity effect for the bilayer of TI and magnetic oxide, which could be essential for the design of a system with QAHE.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Multiple parameter dynamic photoresponse microscopy for data-intensive optoelectronic measurements of van der Waals heterostructures

Quantum devices made from van der Waals (vdW) heterostructures of two dimensional (2D) materials may herald a new frontier in designer materials that exhibit novel electronic properties and unusual electronic phases. However, due to the complexity of layered atomic structures and the physics that emerges, experimental realization of devices with tailored physical properties will require comprehensive measurements across a large domain of material and device parameters. Such multi-parameter measurements require new strategies that combine data-intensive techniques—often applied in astronomy and high energy physics—with the experimental tools of solid state physics and materials science. We discuss the challenges of comprehensive experimental science and present a technique, called Multi-Parameter Dynamic Photoresponse Microscopy (MPDPM), which utilizes ultrafast lasers, diffraction limited scanning beam optics, and hardware automation to characterize the photoresponse of 2D heterostructures in a time efficient manner. Using comprehensive methods on vdW heterostructures results in large and complicated data sets; in the case of MPDPM, we measure a large set of images requiring advanced image analysis to extract the underlying physics. We discuss how to approach such data sets in general and in the specific case of a graphene–boron nitride–graphite heterostructure photocell.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The discrete noise of magnons

We report experimental results, which show that the low-frequency noise of magnonic devices is dominated by the random telegraph signal noise rather than 1/$f$ noise—a striking contrast to many electronic devices ($f$ is a frequency). It was also found that the noise level of surface magnons depends strongly on the power level, increasing sharply at the on-set of nonlinear dissipation. The presence of the random telegraph signal noise suggests that the current fluctuations involve random discrete macro events caused by an individual macro-scale fluctuator. We anticipate that our results will help in developing the next generation of magnonic devices for information processing and sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Improved lifetime of a high spin polarization superlattice photocathode

Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin-polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on a series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O 2 using different methods of oxygen exposure for optimizing photocathode performance. Additionally, one order of magnitude improvement in lifetime with respect to the standard Cs–O 2 activation is achieved without significant loss of electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O 2 . A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Magnetic and transport properties of amorphous, B 2 and L 2 1 Co 2 MnGa thin films

We have studied the magnetic and transport properties of Co 2 MnGa (CMG) thin films grown on MgO(100) substrates in terms of their chemical evolution from amorphous to ordered L 2 1 phases at the substrate temperature T s during the thin film deposition. Interestingly, the chemical order and magnetic properties sharply change depending on T s . The CMG film deposited at T s = 550 °C exhibits the L 2 1 -ordered structure and the magnetization of 3.5 μ B /f.u., while the CMG film deposited at T s = 300 °C shows a B 2-ordered structure and a relatively lower magnetization of 3 μ B /f.u., possibly due to the Mn–Mn antiferromagnetic interactions. A metallic behavior of the electrical resistivity appeared in the CMG film deposited at T s = 550 °C, whereas the semiconducting behavior appeared in the CMG films deposited at 300 °C and room temperature. Moreover, we found that the absolute value of α = d(Δ ρ )/d( T 1/2 ) in the low-temperature range below about 20 K is a measure to evaluate the degree of the chemical disorder. In a Hall effect measurement, the L 2 1 -ordered CMG film obtained at T s = 550 °C shows a sizable anomalous Hall resistivity of 15 µ Ω cm. This study unveils the relation between T s and atomic ordering, providing a new pathway for optimizing the chemical order.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Chemical substitution induced half-metallicity in CrMnSb (1– x ) P x

Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb (1–x) P x . In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ~1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb (1–x) P x , with 100% spin polarization being retained at a large range of epitaxial strain. Furthermore, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb 0.5 P 0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗
DOE OSTI2020

Spin orbit torque switching of synthetic Co/Ir/Co trilayers with perpendicular anisotropy and tunable interlayer coupling

Spin orbit torque (SOT) has attracted much attention as an energy efficient electrical method to switch the magnetization in single magnetic layer with both in-plane and perpendicular anisotropy. Here, we report SOT switching of synthetic antiferromagnetic and ferrimagnetic Co/Ir/Co trilayers, where the net magnetization and the interlayer coupling strength are highly controllable. Here, a weak external field dependence of the SOT switching was observed due to the robust domain wall structure in the trilayer. The switching current density was observed to scale inversely with the net magnetization. For trilayers with the same net magnetization, switching current is independent of the layer order because switching in the thicker Co layer dominates. In both ferromagnetic and antiferromagetic regimes, the switching current reflects the interlayer coupling strength.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A perspective on two-dimensional van der Waals opto-spin-caloritronics

Two-dimensional (2D) van der Waals magnetic semiconductors displaying controllable ferromagnetism at room temperature form atomically sharp interfaces with various substrates. Such heterostructures create platforms for understanding spin-dependent phenomena across interfaces and surfaces for high-performance technological applications. Combining these 2D magnets with light and the spin Seebeck effect (SSE) in-state-of-the-art thermo-opto-spin studies forms a new paradigm in the field of spin-caloritronics that harnesses light as the new heat. In this Perspective, we detail how to exploit recent advances in 2D van der Waals materials to boost the SSE and propose a new strategy for optically controlled SSE in 2D magnetic semiconductor-based heterostructures with the intent to establish the research thrust of “opto-spin-caloritronics.”

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗