Development of a ruggedized 20-watt, 2.3- gigahertz transistor
This program was to develop a ruggedized transistor capable of meeting the following CW objectives at 2.3 gigahertz: a power output of 20 watts, a power gain of 6 db, and an efficiency of 40 percent. Devices developed produced the following CW performance at 2.3 gigahertz: a power output of 23 watts, a power gain of 7.7 db, and an efficiently of 40.0 percent. This performance was achieved with an eight-cell TA8407 transistor design having the following modifications: a thin pellet, high-frequency diffusion, high-level emitter ballasting, an optimized emitter-bonding configuration for uniform power sharing, and a package that provides for some internal matching through the use of distributed line techniques.