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At least 1,783 records · Page 99

Measurement of the EMC effect in light and heavy nuclei

In this work, inclusive electron scattering from nuclear targets has been measured to extract the nuclear dependence of the inelastic cross section in Hall C at the Thomas Jefferson National Accelerator facility. Results are presented for 2 H, 3 He, 4 He, 9 B, 12 C, 63 Cu and 197 Au at an incident electron beam energy of 5.77 GeV for a range of momentum transfer from Q 2 = 2 to 7 (GeV/c) 2 . These data improve the precision of the existing measurements of the EMC effect in the nuclear targets at large x, and allow for more detailed examinations of the A dependence of the EMC effect.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Direct TPE measurement via $e^+p/e^-p$ scattering at low $\varepsilon$ in Hall A

The proton elastic form factor ratio can be measured either via Rosenbluth separation in an experiment with unpolarized beam and target, or via the use of polarization degrees of freedom. However, data produced by these two approaches show a discrepancy, increasing with $Q^2$. The proposed explanation of this discrepancy - two-photon exchange - has been tested recently by three experiments. The results support the existence of a small two-photon exchange effect but cannot establish that theoretical treatments at the measured momentum transfers are valid. At larger momentum transfers, theory remains untested, and without further data, it is impossible to resolve the discrepancy. Additionally, a positron beam at Jefferson Lab allows us to directly measure two-photon exchange over an extended $Q^2$ and $\epsilon$ range with high precision. With this, we can validate whether the effect reconciles the form factor ratio measurements, and test several theoretical approaches, valid in different parts of the tested $Q^2$ range. In this proposal, we describe a measurement program in Hall A that combines the Super BigBite, BigBite, and High Resolution Spectrometers to directly measure the two-photon effect. Though the limited beam current of the positron beam will restrict the kinematic reach, this measurement will have very small systematic uncertainties, making it a clean probe of two photon exchange.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Electric-field-tuned topological phase transition in ultrathin Na 3 Bi

The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal Na 3 Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na 3 Bi is suitable for room-temperature topological transistor operation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spall strength dependence on grain size and strain rate in tantalum

In this paper, we examine the effect of grain size on the dynamic failure tantalum during laser-shock compression and release and identify a significant effect of grain size on spall strength, which is opposite to the prediction of the Hall-Petch relationship because spall is primarily intergranular in both poly and nanocrystalline samples; thus, monocrystals have a higher spall strength than polycrystals, which, in turn, are stronger in tension than ultra-fine grain sized specimens. Post-shock characterization reveals ductile failure which evolves by void nucleation, growth, and coalescence. Whereas in the monocrystal the voids grow in the interior, nucleation is both intra and intergranular in the poly and ultra-fine-grained crystals. The fact that spall is primarily intergranular in both poly and nanocrystalline samples is strong evidence for higher growth rates of intergranular voids, which have a distinctly oblate spheroid shape in contrast with intragranular voids, which are more spherical. The length geometrically-necessary dislocations required to form a grain-boundary (intergranular) void is lower than that of grain-interior (intragranular) void with the same maximum diameter; thus, the energy required is lower. Consistent with prior literature and theory we also identify an increase with spall strength with strain rate from 6x10 6 to 5x10 7 s -1 . Molecular dynamics calculations agree with the experimental results and also predict grain-boundary separation in the spalling of polycrystals as well as an increase in spall strength with strain rate. Finally, an analytical model based on the kinetics of nucleation and growth of intra and intergranular voids and extending the Curran-Seaman-Shockey theory is applied which shows the competition between the two processes for polycrystals.

36 MATERIALS SCIENCE↗

Hamiltonian kinetic-Hall magnetohydrodynamics with fluid and kinetic ions in the current and pressure coupling schemes

We present two generalized hybrid kinetic-Hall magnetohydrodynamics (MHD) models describing the interaction of a two-fluid bulk plasma, which consists of thermal ions and electrons, with energetic, suprathermal ion populations described by Vlasov dynamics. The dynamics of the thermal components are governed by standard fluid equations in the Hall MHD limit with the electron momentum equation providing an Ohm's law with Hall and electron pressure terms involving a gyrotropic electron pressure tensor. The coupling of the bulk, low-energy plasma with the energetic particle dynamics is accomplished through the current density (current coupling scheme; CCS) and the ion pressure tensor appearing in the momentum equation (pressure coupling scheme; PCS) in the first and the second model, respectively. The CCS is a generalization of two well-known models, because in the limit of vanishing energetic and thermal ion densities, we recover the standard Hall MHD and the hybrid kinetic-ions/fluid-electron model, respectively. This provides us with the capability to study in a continuous manner, the global impact of the energetic particles in a regime extending from vanishing to dominant energetic particle densities. The noncanonical Hamiltonian structures of the CCS and PCS, which can be exploited to study equilibrium and stability properties through the energy-Casimir variational principle, are identified. As a first application here, we derive a generalized Hall MHD Grad–Shafranov–Bernoulli system for translationally symmetric equilibria with anisotropic electron pressure and kinetic effects owing to the presence of energetic particles using the PCS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with 2-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant’s magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant’s position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with 2-terminal geometry.

42 ENGINEERING↗

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3 , while the AlO 2- terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.

36 MATERIALS SCIENCE↗

Optical conductivity of the type-II Weyl semimetal TaIrTe 4

TaIrTe4 is an example of a candidate Weyl type-II semimetal with a minimal possible number of Weyl nodes. Four nodes are reported to exist a single plane in k-space. The existence of a conical dispersion linked to Weyl nodes has yet to be shown experimentally. Here we use optical spectroscopy as a probe of the band structure on a low-energy scale. Studying optical conductivity allows us to probe intraband and interband transitions with zero momentum. In TaIrTe 4 , we observe a narrow Drude contribution and an interband conductivity that may be consistent with a tilted linear band dispersion up to 40 meV. The interband conductivity allows us to establish the effective parameters of the conical dispersion; effective velocity v = 1.1 · 10 4 m/s and tilt γ = 0.37. The transport data, Seebeck and Hall coefficients, are qualitatively consistent with conical features in the band structure. Quantitative disagreement may be linked to the multiband nature of TaIrTe 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Edge spin transport in the disordered two-dimensional topological insulator $\mathrm{WTe_2}$

The spin conductance of two-dimensional topological insulators (2D TIs) is not expected to be quantized in the presence of perturbations that break the spin-rotational symmetry. However, the deviation from the pristine-limit quantization has yet to be studied in detail. In this paper, we define the spin current operator for the helical edge modes of a 2D TI and introduce a four-terminal setup to measure spin conductances. Using the developed formalism, we consider the effects of disorder terms that break spin-rotational symmetry or give rise to edge-to-edge coupling. We identify a key role played by spin torque in an out-of-equilibrium edge. We then utilize a tight-binding model of topological monolayer $\mathrm{WTe_2}$ and scattering matrix formalism to numerically study spin transport in a four-terminal 2D TI device. In particular, we calculate the spin conductances and characteristic spin decay length in the presence of magnetic disorder. In addition, we also study the effects of interedge scattering in a quantum point contact geometry. Here we find that the spin Hall conductance is surprisingly robust to spin symmetry-breaking perturbations, as long as time-reversal symmetry is preserved and interedge scattering is weak.

36 MATERIALS SCIENCE↗

Origin of transverse voltages generated by thermal gradients and electric fields in ferrimagnetic-insulator/heavy-metal bilayers

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm 3 Fe 5 O 12 /W and Tm 3 Fe 5 O 12 /Pt) to corresponding electrically driven transverse resistances at and above room temperature. We find for Tm 3 Fe 5 O 12 /W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm 3 Fe 5 O 12 /Pt the ratio of the electrically driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. Here, we ascribe this difference to a proximity-induced magnetic layer at the Tm 3 Fe 5 O 12 /Pt interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct link between disorder and magnetoresistance in topological semimetals

The extent to which disorder influences the properties of topological semimetals is relevant to the understanding of topological states and their use in practical applications. Using molecular beam epitaxy, we achieve systematic control of point defect concentrations in the prototypical Dirac semimetal Cd 3 As 2 to gain insight into the role of disorder on electron transport behavior. Using the guiding center diffusion model for linear magnetoresistance, we extract point defect densities as a function of deposition conditions. We find that reducing cadmium defect concentrations by an order of magnitude results in an 2x increase in the magnetoresistance from 450% to 900%. This finding yields important information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Symmetry-driven persistent spin texture for the two-dimensional nonsymmorphic CdTe and ZnTe crystal structures

In this paper, two nonsymmorphic two-dimensional structures of CdTe and ZnTe are modeled, and using state-of-the-art density functional theory with the group theory of solids, their symmetry-enforced electronic properties are studied. The in-plane ferroelectricity coupled with strong spin-orbit coupling induces a unidirectional out-of-plane Rashba spin-orbit field that can host a momentum-independent uniform spin configuration known as persistent spin texture (PST) at the Brillouin zone center. PST in these structures is found to be robust against external perturbations such as strain, structural distortion, and independent of layer thickness. These unprecedented intrinsic spin transport properties hold utmost importance in spintronics, as the experimental stringent condition of equal Rashba and Dresselhaus constants [Phys. Rev. Lett. 90, 146801 (2003)] is eliminated. The calculated persistent spin helix wavelength of <~5 nm paves the way for developing next-generation nanosized nonballistic spin field-effect transistors compared with micrometer-sized GaAs/AlGaAs quantum wells. Further, these materials exhibit finite spin Hall conductivity at the band edges and hence can be used in ferromagnet-free spin Hall transistors. Although CdTe and ZnTe systems have been widely studied for photocatalysis and solar cell applications over the past few decades, their potential application in spintronic devices has not been explored. Mono/few layers of CdTe and ZnTe synthesized from (110) facets of bulk zinc-blende crystals [Nat. Commun. 3, 1057 (2012)] satisfy all symmetry operations of the nonsymmorphic space group and hence can be considered ideal materials to verify our theoretical results experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Complex transport and magnetism in inhomogeneous mixed valence Ce 3 Ir 4 Ge 13

We report the discovery of Ce 3 Ir 4 Ge 13 , a Remeika phase with a complex array of structural, electronic, and magnetic properties. In this work, our single crystal x-ray diffraction measurements show that Ce 3 Ir 4 Ge 13 forms in the tetragonally distorted $I4_1/amd$ space group, which has three distinct rare earth sites. The electrical resistivity is almost temperature independent over three decades in temperature, from 0.4 K to 400 K, while the Hall coefficient measurements are consistent with a low-carrier semimetal. Magnetic susceptibility measurements reveal an effective moment, $μ^\text{exp}_\text{eff} = 1.87μ_B/$Ce, that falls significantly short of the expected value for Ce 3+ , suggesting that two of the rare earth sites are occupied by magnetic Ce 3+ while the third is occupied by nonmagnetic Ce 4+ . Upon cooling, Ce 3 Ir 4 Ge 13 first enters a short range magnetically ordered state below $T_\text{SRO}$ = 10 K, marked by a deviation from Curie-Weiss behavior in susceptibility and a broad field-independent heat capacity anomaly. At lower temperatures, we observe a second, sharper peak in the heat capacity at $T^\ast$ = 1.7 K, concurrent with a splitting of the field-cooled and zero-field-cooled susceptibilities. A small resistivity drop at $T^\ast$ suggests a loss of spin disorder scattering consistent with a magnetic ordering or spin freezing transition. Ce 3 Ir 4 Ge 13 is therefore a rare example of an inhomogeneous mixed valence compound with a complex array of thermodynamic and transport properties.

36 MATERIALS SCIENCE↗

Skyrmion dynamics and transverse mobility: skyrmion Hall angle reversal on 2D periodic substrates with dc and biharmonic ac drives

Here we numerically examine the dynamics of a skyrmion interacting with a two-dimensional periodic substrate under dc and biharmonic ac drives. We show that the Magnus force of the skyrmion produces circular orbits that can resonate with the ac drive and the periodicity of the substrate to create quantized motion both parallel and perpendicular to the dc drive. The skyrmion Hall angle exhibits a series of increasing and/or decreasing steps along with strongly fluctuating regimes. In the phase locked regimes, the skyrmion Hall angle is constant and the skyrmion motion consists of periodic orbits encircling an integer number of obstacles per every or every other ac drive cycle. We also observe phases in which the skyrmion moves at 90° with respect to the driving direction even in the presence of damping, a phenomenon called absolute transverse mobility that can exhibit reentrance as a function of dc drive. When the biharmonic ac drives have different amplitudes in the two directions, we find regimes in which the skyrmion Hall angle shows a sign reversal from positive to negative, as well as a reentrant pinning effect in which the skyrmion is mobile at low drives but becomes pinned at higher drives. These behaviors arise due to the combination of the Magnus force with the periodic motion of the skyrmions, which produce Shapiro steps, directional locking, and ratchet effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lattice Clifford fractons and their Chern-Simons-like theory

We use Dirac matrix representations of the Clifford algebra to build fracton models on the lattice and their effective Chern-Simons-like theory. As an example, we build lattice fractons in odd D spatial dimensions and their (D+1) spacetime dimensional effective theory. The model possesses an anti-symmetric K matrix resembling that of hierarchical quantum Hall states. The gauge charges are conserved in sub-dimensional manifolds which ensures the fractonic behavior. The construction extends to any lattice fracton model built from commuting projectors and with tensor products of spin-1/2 degrees of freedom at the sites.

Fontana, Weslei↗

Comparison of the Atomic Oxygen Erosion Depth and Cone Height of Various Materials at Hyperthermal Energy

Atomic oxygen readily reacts with most spacecraft polymer materials exposed to the low Earth orbital (LEO) environment. If the atomic oxygen arrival comes from a fixed angle of impact, the resulting erosion will foster the development of a change in surface morphology as material thickness decreases. Hydrocarbon and halopolymer materials, as well as graphite, are easily oxidized and textured by directed atomic oxygen in LEO at energies of approx.4.5 eV. What has been curious is that the ratio of cone height to erosion depth is quite different for different materials. The formation of cones under fixed direction atomic oxygen attack may contribute to a reduction in material tensile strength in excess of that which would occur if the cone height to erosion depth ratio was very low because of greater opportunities for crack initiation. In an effort to understand how material composition affects the ratio of cone height to erosion depth, an experimental investigation was conducted on 18 different materials exposed to a hyperthermal energy directed atomic oxygen source (approx.70 eV). The materials were first salt-sprayed to provide microscopic local areas that would be protected from atomic oxygen. This allowed erosion depth measurements to be made by scanning microscopy inspection. The polymers were then exposed to atomic oxygen produced by an end Hall ion source that was operated on pure oxygen. Samples were exposed to an atomic oxygen effective fluence of 1.0x10(exp 20) atoms/sq cm based on Kapton H polyimide erosion. The average erosion depth and average cone height were determined using field emission scanning electron microscopy (FESEM). The experimental ratio of average cone height to erosion depth is compared to polymer composition and other properties.

Waters, Deborah L.↗

Numerical Studies of Hall Thruster Acceleration Region Electron Transport

Azimuthal direction 1-D and azimuthal and axial direction 2-D Particle in Cell (PIC) simulations of the Hall thruster acceleration and near-plume regions are presented. The axial extent of the 2-D computational domain is based on the ExB drift parameter, 𝑫𝑬𝒙𝑩, the number of times around the channel an electron ExB drifts before being scattered. With only high energy main beam ions, the simulations produced a broad potential profile in the acceleration region. The addition of a small amount of ionization in the acceleration domain at a rate consistent with Hall thruster parameters causes the potential profile to develop two distinct regions. In the upstream portion of the computational domain, the potential profile is very steep, typical of Hall thruster acceleration regions. In the downstream portion, the potential profile is almost flat, like potentials in Hall thruster near plume regions. This bifurcation happens naturally; there is no other change in code parameters between the two results. Without the addition of a small amount of ionization in the acceleration region, the axial electron transport is very low. With ionization, the calculated ratio of electron current to ion current is the same order of those measured in Hall thrusters. This suggests that in regions with lower energy electrons and ions, plasma waves are effective in allowing crossfield transport, and axial electric fields are small. In the acceleration region, the plasma waves are less effective at scattering the energetic electrons, and high axial electric fields are needed to produce the observed cross-field electron transport.

Ortega, Alejandro Lopez↗

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Schacham, S. E.↗