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Optical properties of post-annealed ZnO:Al thin films studied by spectroscopic ellipsometry

In this paper, effects of the thermal annealing on the structural, electrical, and optical properties of Al-doped ZnO (ZnO:Al) thin films prepared by reactive radio-frequency sputtering were investigated. From the X-ray diffraction observations, the orientation of ZnO:Al films was found to be a c-axis in the hexagonal structure. The optical properties of the films were investigated by optical transmittance and spectroscopic ellipsometry characterization. Based on Tauc–Lorentz model, the optical constants of ZnO:Al films were extracted in the photon energy ranging from 1.0 to 4.5 eV. Our result showed that the refractive index and extinction coefficient of the films changed consistently with annealing temperature.

36 MATERIALS SCIENCE↗

Study on third-order nonlinear optical properties of 4-methylsulfanyl chalcone derivatives using picosecond pulses

Graphical abstract: Photograph and schematic representation of Z-scan experimental setup used to investigate third order nonlinear properties of the chalcone materials. Highlights: ► Br and NO{sub 2} substituted chalcone derivatives were exposed to picosecond laser pulses. ► Third-order nonlinear optical (NLO) properties were investigated. ► Compounds show promising third-order and optical limiting properties. ► These materials found suitable for electrical and optical applications. -- Abstract: In this paper we present results from the experimental study of third-order nonlinear optical (NLO) properties of three molecules of Br and NO{sub 2} substituted chalcone derivatives namely (2E)-1-(4-bromophenyl)-3-[4(methylsulfanyl)phenyl]prop-2-en-1-one (4Br4MSP), (2E)-1-(3-bromophenyl)-3-[4-(methylsulfanyl) phenyl]prop-2-en-1-one (3Br4MSP) and (2E)-3[4(methylsulfanyl) phenyl]-1-(4-nitrophenyl)prop-2-en-1-one (4N4MSP). The NLO properties have been investigated by Z-scan technique using 2 ps laser pulses at 800 nm. The nonlinear refractive indices, nonlinear absorption coefficient, and the magnitude of third-order susceptibility have been determined. The values obtained are of the order of 10{sup −7} cm{sup 2}/GW, 10{sup −3} cm/GW and 10{sup −14} esu respectively. The molecular second hyperpolarizability for the chalcone derivatives is of the order of 10{sup −32} esu. The coupling factor, excited state cross section, ground state cross section etc. were determined. The optical limiting (OL) property was studied. The results suggest that the nonlinear properties investigated for present chalcones are comparable with some of the reported chalcone derivatives and can be desirable for NLO applications.

36 MATERIALS SCIENCE↗

CdB{sub 10}O{sub 14}(OH){sub 4}·H{sub 2}O with an unprecedented decaborate fundamental building block

Graphical abstract: Display Omitted Highlights: ► CdB{sub 10}O{sub 14}(OH){sub 4}·H{sub 2}O is prepared by boric acid flux method. ► Its structure is solved by single-crystal X-ray diffraction in space group P2{sub 1}/n. ► It possesses an unprecedented decaborate fundamental building block B{sub 10}O{sub 20}. ► Structure features are discussed in detail and compared with other polyborates. -- Abstract: CdB{sub 10}O{sub 14}(OH){sub 4}·H{sub 2}O has been synthesized under boric acid flux condition and characterized by single-crystal X-ray diffraction, infrared spectra, and UV–vis reflectance spectroscopy. It crystallizes in the monoclinic space group P2{sub 1}/n with a = 7.7277(8), b = 18.95(2), c = 9.8616(10) Å, β= 91.454(1)°, V = 1443.7(3) Å. The structure consists of [B{sub 10}O{sub 16}(OH){sub 4}] layers of 9-membered borate rings enclosing Cd{sup 2+} cations. Adjacent borate layers are interconnected via hydrogen bonding to form a 3D network. It possesses an unprecedented decaborate fundamental building block B{sub 10}O{sub 20}. The structure details are discussed together with Sr[B{sub 6}O{sub 9}(OH){sub 2}]·3H{sub 2}O, Pb[B{sub 8}O{sub 11}(OH){sub 4}], Pr[B{sub 8}O{sub 11}(OH){sub 5}], and Nd[B{sub 9}O{sub 13}(OH){sub 4}]·H{sub 2}O, which have correlated FBBs. The band structure calculations show its direct energy band gap of ∼4.68 eV, in consistent with the estimated value (4.77 eV) from UV–vis. In addition, dielectric constants and refractive indexes are also calculated.

36 MATERIALS SCIENCE↗

Evolution of the structure and properties of solution-based Ge{sub 23}Sb{sub 7}S{sub 70} thin films during heat treatment

Highlights: ► Chalcogenide films are created through a wet chemical route. ► Residual solvent in spun films degrades IR performance. ► Solvent is removed via a multi-step heat treatment. ► Impact of heat treatment on nano- and micro-scale structure is characterized. ► Infrared spectroscopy and AFM used to characterize films. - Abstract: Optical devices such as waveguides and resonators have typically been produced through standard vacuum deposition and photolithography techniques. Solution-derived chalcogenide films are presented as an alternative for devices not easily fabricated through these standard techniques; however, many details of the chemical processes involved in film deposition are still unknown. We present a detailed analysis of the formation of Ge{sub 23}Sb{sub 7}S{sub 70} films from solution: solvent removal was studied using in situ FTIR and UV–visible absorption spectroscopies during heat treatments at various temperatures, and the glass structure and glass–solvent interactions were studied through analysis of the far- and mid-IR regions, respectively. Correlations have been established between atomic-level structural aspects and macroscopic physical properties such as refractive index, band gap energies, and surface roughness.

36 MATERIALS SCIENCE↗

Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films

Graphical abstract: All the films are found to be polycrystalline ZnO possessing hexagonal wurtzite structure. The intensities of all the peaks are diminished strongly in the Fe-doped films, indicating their lower crystallinity as compared to the undoped ZnO film. The average crystallite size decreases from 35.21 nm (undoped sample) to 15.43 nm (1 at% Fe-doped sample). - Highlights: • Fe-doped ZnO films show smaller crystallinity with crystallite size: 15–26 nm. • Optical band gap in ZnO films decreases on Fe doping. • Fe-doped films exhibit the normal dispersion for the wavelength range 450–600 nm. • PL spectra of the Fe-doped films show quenching of the broad green-orange emission. • Acetone response of the Fe-doped films increases considerably at 300 °C. - Abstract: The ZnO thin films (undoped and Fe-doped) deposited by chemical spray pyrolysis technique have been analyzed by X-ray powder diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that all the films possess hexagonal wurtzite structure of zinc oxide having crystallite sizes in the range 15–36 nm. On 1 at% Fe doping, the surface roughness of the film increases which favors the adsorption of atmospheric oxygen on the film surface and thereby increase in the gas response. Optical studies reveal that the band gap decreases due to creation of some defect energy states below the conduction band edge, arising out of the lattice disorder in the doped films. The refractive index of the films decreases on Fe doping and follows the Cauchy relation of normal dispersion. Among all the films examined, the 1 at% Fe-doped film exhibits the maximum response (∼72%) at 300 °C for 100 ppm concentration of acetone in air.

36 MATERIALS SCIENCE↗

Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup −1} Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

36 MATERIALS SCIENCE↗

Ab initio studies of structural, electronic, optical, elastic and thermal properties of silver gallium dichalcogenides (AgGaX{sub 2}: X = S, Se, Te)

Graphical abstract: - Highlights: • FP-LAPW method has been used to compute the solid state properties of AgGaX{sub 2} (X = S, Se, Te). • Electronic and optical properties reported with recently developed mBJ potential. • Thermal expansion, heat capacity, Debye temperature, entropy and Grüneisen parameter were evaluated. • Hardness was calculated for the first time at different temperature and pressure. - Abstract: We have performed ab initio calculations for the structural, electronic, optical, elastic and thermal properties of the silver gallium dichalcogenides (AgGaX{sub 2}: X = S, Se, Te). In this study, we have used the accurate full potential linearized augmented plane wave (FP-LAPW) method to find the equilibrium structural parameters and to compute the six elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 33}, C{sub 44} and C{sub 66}). We have reported electronic and optical properties with the recently developed density functional theory of Tran and Blaha, and this theory is used along with the Wu-Cohen generalized gradient approximation (WC-GGA) for the exchange-correlation potential. Furthermore, optical features such as dielectric functions, refractive indices, extinction coefficient, optical reflectivity, absorption coefficients and optical conductivities were calculated for photon energies up to 40 eV. The thermodynamical properties such as thermal expansion, heat capacity, debye temperature, entropy, Grüneisen parameter and bulk modulus were calculated employing the quasi-harmonic Debye model at different temperatures (0–900 K) and pressures (0–8 GPa) and the silent results were interpreted. Hardness of the materials was calculated for the first time at different temperatures and pressures.

36 MATERIALS SCIENCE↗

Structural, optical and waveguiding properties improvement of SiO{sub 2}/TiO{sub 2} Bragg reflectors processed by the sol–gel method under the effect of Ni-doped TiO{sub 2} and annealing duration

Highlights: • The formation of anatase phase only, whatever are Ni content and annealing duration. • Transmission and PL spectra redshifted with Ni content and annealing duration. • PL lowering with Ni content is due to the recombination rate of electron–hole reduction. • Annealing duration increases the recombination rate and then the PL intensity rises. • Increasing Ni content improves waveguiding properties and then two TE modes appear. - Abstract: We investigated the nickel doped TiO{sub 2} layer and annealing duration effects on SiO{sub 2}/TiO{sub 2} Bragg reflectors. The films crystallize in pure anatase phase whatever is the Ni content and the annealing duration. In UV–vis-NIR analyses, variations of width, position and transmission coefficient of the stop-band were observed. The PL spectra red-shifted when the Ni content and annealing duration increased. As the annealing duration increases, an additional sharp emission peak appears around 867 nm, indicating a reduced number of defects. As Ni content increased, the M-lines spectroscopy shows two transverse electric polarization guided modes TE{sub 0} and TE{sub 1}, which indicates a decreased refractive index and an increased film thickness.

36 MATERIALS SCIENCE↗

Investigation of structural, optical, electrical and dielectric properties of catalytic sprayed hausmannite thin film

Hausmannite Mn{sub 3}O{sub 4} thin film have been synthesized using spray pyrolysis method. These films are characterized using X-ray diffraction (XRD), atomic force microscope AFM, UV–vis–NIR spectroscopy and impedance spectroscopy. XRD study confirms the tetragonal structure of the as-deposited films with lattice parameters, a = 5.1822 Å and c = 9.4563 Å and a grain size of about 56 nm. UV–vis–NIR spectroscopy was further used to estimate optical constants such as extinction coefficient, refractive index, band gap and Urbach energy. Moreover, impedance spectroscopy analysis was employed to estimate electrical and dielectrical properties of the sprayed thin films. The activation energy values deduced from DC conductivity and relaxation frequency were almost the same, revealing that the transport phenomena is thermally activated by hopping between localized states. The AC conductivity is found to be proportional to ω{sup s}. The temperature dependence of the AC conductivity and the frequency exponent, s was reasonably well interpreted in terms of the correlated barrier-hopping CBH model. The dielectric properties were sensitive to temperature and frequency. The study of the electrical modulus indicated that the charge carrier was localized. Experimental results concerning optical constants as Urbach energy, dielectric constant, electric modulus and AC and DC conductivity were discussed in terms of the hopping model as suggested by Elliott.

36 MATERIALS SCIENCE↗

Fabrication of one-dimensional alumina photonic crystals by anodization using a modified pulse-voltage method

Highlights: • The alumina multilayer structure with alternating high and low refractive index is fabricated. • This multilayer shows a strong photonic band gap (PBG) and vivid film colors. • The first PBG could be modulated easily by varying the duration time of constant high or low voltages. • Fabrication of the photonic crystal is obtained by directly electrochemical anodization. • The formation mechanism of multilayer is also discussed. - Abstract: The alumina nanolayer structure with alternating high and low porosities is conveniently fabricated by applying a modified pulse voltage waveform with constant high and low voltage. This structure shows the well-defined layer in a long-range structural periodicity leads to a strong photonic band gap (PBG) from visible to near infrared and brilliant film colors. Compared with the previous reported tuning method, this method is more simple and flexible in tuning the PBG of photonic crystals (PCs). The effect of duration time of high, low and 0 V voltages on PBG is discussed. The first PBG could be modulated easily from the visible to near infrared region by varying the duration time of constant high or low voltages. It is also found that the 0 V lasting for appropriate time is helpful to improve the quality of the PCs. The formation mechanism of multilayer is also discussed.

36 MATERIALS SCIENCE↗

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

36 MATERIALS SCIENCE↗

Effect of nano particle sizes on the third-order optical non-linearities and nanostructure of copolymer P3HT:PCBM thin film for organic photovoltaics

Highlights: • Active layer (P3HT:PCBM) has been deposited on substrate type by spin coating at 1000 rpm. • The device was completed by evaporating a 60 nm thick, circular gold electrodes onto the P3HT:PCBM. • Nonlinear refractive indices of the three particle sizes are found to be of the order of 10{sup −7} cm{sup 2}/W - Abstract: Organic solar cells are based on (3-hexylthiophene):[6,6]-phenyl C61-butyric acid with methyl ester Bulk Heterojunction. An inverted structure has been fabricated using nano-anatase crystalline titanium dioxide, as the electron transport layer, which was prepared on either the Indium Tin Oxide coated glass (ITO—glass), or Silicon wafer, as well as on glass substrates by the sol–gel method, at different spin speed, using the spin-coating system. The effect of thickness on the surface morphology and on the optical properties of TiO{sub 2} layer, was investigated using the Atomic Force Microscopy (AFM), X-ray diffraction, and UV–visible spectrophotometer. The samples were examined to feature currents and voltages, in the darkness and light extraction efficiency of the solar cell. The highest open-circuit voltage, V{sub oc}, and power conversion efficiency were 0.66% and 0.39%, fabricated with 90 nm, respectively. The non-linear optical properties of nano-anatase TiO{sub 2} sol–gel, were investigated at different particle sizes, using the z-scan technique.

36 MATERIALS SCIENCE↗

Wettability, structural and optical properties investigation of TiO{sub 2} nanotubular arrays

Graphical abstract: FESEM images of the TiO 2 nanotube layers formed at 0.5 wt% NH4F/ glycerol. - Highlights: • Structural property investigation of TiO{sub 2} nanotube. • Evaluation of wettability of TiO{sub 2} nanotube. • Study on optical properties of TiO{sub 2} nanotube. • The effect of anatase phase on optical and wettability properties of TiO{sub 2.} - Abstract: In this study, the effect of microstructural evolution of TiO{sub 2} nanotubular arrays on wettability and optical properties was investigated. Pure titanium was deposited on silica glass by PVD magnetron sputtering technique. The Ti coated substrates were anodized in an electrolyte containing NH{sub 4}F/glycerol. The structures of the ordered anodic TiO{sub 2} nanotubes (ATNs) as long as 175 nm were studied using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The result shows a sharp peak in the optical absorbance spectra around the band gap energy, 3.49–3.42 eV for annealed and non-annealed respectively. The thermal process induced growth of the grain size, which influence on the density of particles and the index of refraction. Furthermore, the wettability tests' result displays that the contact angle of intact substrate (θ = 74.7°) was decreased to 31.4° and 17.4° after anodization for amorphous and heat treated (450 °C) ANTs coated substrate, respectively.

36 MATERIALS SCIENCE↗

Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

36 MATERIALS SCIENCE↗

Structural, optical and femtosecond third-order nonlinear optical properties of LiNbO{sub 3} thin films

Highlights: • Fs third order NLO properties of LiNbO{sub 3} thin films were investigated. • Al:ZnO was used as a buffer layer to control the growth of LiNbO{sub 3}. • The magnitude of the χ{sup (3)} of all films was ∼10{sup −11} e.s.u. • χ{sup (3)} obtained here is much higher that of single crystal Z-cut LiNbO{sub 3}. - Abstract: LiNbO{sub 3} thin films were deposited by means of Al:ZnO as intermediate layer using pulsed laser deposition and their structural, linear and nonlinear optical (NLO) properties were investigated. The films were found to be polycrystalline, (110) orientation for Al:ZnO/fused silica and (300) orientation for Al:ZnO/quartz substrates. The films demonstrated a transparency of >80% in the visible and near-infrared region. The NLO studies were performed with the Z-scan technique using ∼150 fs, 80 MHz pulses at 800 nm. The studies revealed that the polycrystalline LiNbO{sub 3}films and (300) LiNbO{sub 3}films demonstrated reverse saturable absorption while a transition to saturable absorption was observed in the case of (110) LiNbO{sub 3}. The presence of two-photon absorption is attributed to the indirect transition via intermediate defect levels which is related to the structural asymmetry. The large nonlinearity in refractive index could be a result of the strain induced ferroelectric polarization. The magnitude of the third order optical nonlinearity of all films was ∼10{sup −11} e.s.u. which is orders of magnitude higher than the value obtained for single crystal Z-cut LiNbO{sub 3}.

36 MATERIALS SCIENCE↗

Al-Si-N thin films deposited by laser ablation: Effect of plasma parameters on mechanical and optical properties

Highlights: • Al-Si-N thin films deposited by PLD showed a chemical composition of the films dependent on the silicon plasma density. • The change in the direct band gap of the samples was related to the Si content and the maximum was 5.54 eV for 20 at.% of Si. • Maximum hardness of 30.3 ± 1.5 GPa was obtained at 4 at.% Si. • The increase in the silicon content of Al-Si-N thin films promotes the formation of a-Si{sub 3}N{sub 4} matrix. - Abstract: Al-Si-N thin films were deposited using simultaneous laser ablation of silicon and aluminum targets in a nitrogen atmosphere at a substrate temperature of 200 °C. The silicon content of the films was studied as a function of the plasma parameters (mean ion kinetic energy and plasma density), produced by the ablation of the silicon target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was determined by X-ray photoelectron spectroscopy. The results showed a dependence between the silicon content and the silicon plasma density. Optical emission spectroscopy measurements showed that variations of the working pressure produced changes in the intensity of excited species (N{sub 2}{sup +}, Si{sup 2+}, Al{sup +} and Al{sup 0}), and in the incorporation of these elements into the films. For a working pressure of 0.6 Pa, hardness measurements gave a maximum of 30 ± 1.5 GPa for a silicon content of 4 at.%. The optical constants (refractive index and extinction coefficient) and direct band gap were evaluated as a function of the silicon content in the films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nd3+ Doping effect on the optical and electrical properties of SnO2 thin films prepared by nebulizer spray pyrolysis for opto-electronic application

Highlights: • High quality, Nd:SnO{sub 2} thin films prepared using simple nebulizer spray pyrolysis technique. • Characterizations of the films confirmed good crystallinity and smooth surface morphology. • High optical transparency with low electrical resistivity in nebulizer spray pyrolysis prepared Nd: SnO{sub 2} thin films is presented. - Abstract: Neodymium doped tin oxide (Nd: SnO{sub 2}) thin films were deposited on heated glass substrates with different Nd concentrations (0, 2, 4 and 6 %) by nebulizer spray pyrolysis method. Effects of Nd doping on structural, optical and electrical properties of the prepared films were investigated. X-ray diffraction study confirmed that all the deposited Nd: SnO{sub 2} films are in polycrystalline tetragonal structure with (211) preferential orientation. FESEM images showed that the prepared SnO{sub 2} particles are in nano-size in spherical shape, completely covering the substrate. AFM topology showed smooth deposition of the films with minimum surface roughness. The films showed maximum optical transmittance 90 % in the visible region with a band gap value 3.67 eV, also showed low refractive index and extinction coefficients. Room temperature photoluminescence (PL) spectrum exhibited a strong UV emission peak at 356 nm for all the films. All the Nd: SnO{sub 2} films displayed n-type conductivity with low electrical resistivity 5.88 × 10{sup −4} (Ω cm) for 4 % Nd doping. As the films showed good figure of merit (ϕ) values, these Nd doped SnO{sub 2} thin films can perform better role in optoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced resonant nonlinear absorption and optical limiting in Er3+ ions doped multicomponent tellurite glasses

Highlights: • Nonlinear optical properties of TPBKZFEr glasses investigated by Z-scan technique. • Optical limiting property of the TPBKZFEr glasses is studied for the first time. • Nonlinearity of the prepared glasses found to be enhanced with Er{sup 3+} concentration. • The mechanism behind the nonlinear properties is successfully explained. • It is evident that these glasses can be developed as tunable optical limiters. - Abstract: Nonlinear optical properties of multicomponent tellurite glasses doped with Er{sup 3+} ions were investigated by open aperture Z-scan measurements. Compositional and linear optical properties of the glasses were examined by the energy dispersive X-ray spectrum and UV–vis–NIR absorption spectrum analysis respectively. The mechanism behind the optical nonlinearity and optical limiting efficiency was successfully explained by evaluating the physical properties such as density, refractive index and polarizability of the glasses. The nonlinear properties critically depend on the polarizability, which is found to increase with the addition of Er{sup 3+} ions by the creation of non-bridging oxygen ions. By the systematic addition of Er{sup 3+} ions, we have dictated the physical properties and thus tuned the optical limiting efficiency of the glasses. This makes the Er{sup 3+}-doped multicomponent tellurite glasses flexible tunable optical limiters for potential device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗