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A wave propagating along the edge of a thin semi-infinite plasma layer is investigated. The edge wave is described by a set of integral equations that are solved explicitly, yielding the wave dispersion and field distribution.
We demonstrate a technique for selectively erasing and refilling unit cells of terahertz (THz) metamaterials. The structures are formed by injecting eutectic gallium indium (EGaIn), a liquid metal at room temperature, into microchannels within a polydimethylsiloxane (PDMS) mold fabricated using conventional soft lithography techniques. The thin oxide layer that forms on the surface of EGaIn can be locally dissolved via exposure to hydrochloric acid (HCl) introduced at the surface of the gas permeable PDMS mold. In the absence of the oxide skin, the liquid metal retracts to a position where a stable new oxide layer can be formed, effectively erasing the liquid metal structure in the presence of HCl. After erasing selected structures, EGaIn can be re-injected into microchannels to yield the initial structure. In the case of small unit cells, we show that mechanical pressure can be used to effectively erase individual elements. We use THz time-domain spectroscopy to characterize the distinct transmission properties for each of these different structures.
No abstract prepared.
In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.
We report on the tuning of the optical properties of II-VI-material-based microcavity samples, which is achieved by depositing Ag films on top of the structures. The micro-reflectivity spectra show a spectral shift of the sample resonance dependent on the metal layer thickness. By comparison of the experimental findings with the theoretical calculations applying the transfer matrix method on a metal-dielectric mirror structure, the influence of the metal layer particularly with regard to its partial oxidation was explored. Tamm plasmon modes are created at the interface between an open cavity with three ZnSe quantum wells and a metal layer on top. When tuning the excitonic emission relative to the mode by changing the sample temperature, an anticrossing of the resonances was observed. This is a clear indication that the strong coupling regime has been achieved in that sample configuration yielding a Rabi splitting of 18.5 meV. These results are promising for the realization of polariton-based optical devices with a rather simple sample configuration.
Modulated elemental reactants is a method by which new and complex intergrowth compounds can be synthesized by the self-assembly of designed precursors prepared by physical vapor deposition. Careful calibration of the composition and thickness of the precursors ensures the formation of the desired product by precise control of local composition and diffusion lengths. Superstructures of increasing complexity can be realized using binary and ternary systems as starting points. The synthesis of systems based on three different binary compounds, either alloyed together or separated into distinct layers, expands the number of possible superstructures that can be formed using this technique, but provides analytical challenges. The synthesis of [(SnSe){sub 1.15}]{sub 1}([Ta{sub x}V{sub 1−x}]Se{sub 2}){sub 1}[(SnSe){sub 1.15}]{sub 1}([V{sub y}Ta{sub 1−y}]Se{sub 2}){sub 1} compound is used to illustrate the preparation of precursors and the challenges in both measuring and limiting the interdiffusion of layers during self-assembly. Systematic changes in the electrical properties of (SnSe){sub 1+δ}(Ta{sub x}V{sub 1−x})Se{sub 2} alloys are observed as x is varied. The electrical resistivity of [(SnSe){sub 1.15}]{sub 1}([Ta{sub x}V{sub 1−x}]Se{sub 2}){sub 1}[(SnSe){sub 1.15}]{sub 1}([V{sub y}Ta{sub 1−y}]Se{sub 2}){sub 1} can be modeled as the two constituent layers in parallel.
We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X = Hf, Ta, W, and Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The largest spin Hall angle |θ{sub SH}| of Hf, Ta, W, and Re (∼0.11, 0.10, 0.23, and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle.
The so-called δ'-interaction as a particular example in Kurasov’s distribution theory developed on the space of discontinuous (at the point of singularity) test functions, is identified with the diagonal transmission matrix, continuously depending on the strength of this interaction. On the other hand, in several recent publications, the δ'-potential has been shown to be transparent at some discrete values of the strength constant and opaque beyond these values. This discrepancy is resolved here on the simple physical example, namely the heterostructure consisting of two extremely thin layers separated by infinitesimal distance. In the three-scale squeezing limit as the thickness of the layers and the distance between them simultaneously tend to zero, a whole variety of single-point interactions is realized. The key point is the generalization of the δ'-interaction to the family for which the resonance sets appear in the form of a countable number of continuous two-dimensional curves. In this way, the connection between Kurasov’s δ'-interaction and the resonant-tunneling point interactions is derived and the splitting of the resonance sets for tunneling plays a crucial role.
Side reactions involving surface reduction play a critical role in the failure of LiNi 0.8 Co 0.15 Al 0.05 O 2 to reach its theoretical capacity as a cathode material for Li-ion batteries. While macroscopic consequences are known, the underlying nanoscopic mechanisms are not fully elucidated. By coupling X-ray spectroscopy with several X-ray microscopy modalities, we have spatially resolved the extent of Ni oxidation at several states of charge and uncovered heterogeneity that is hidden when considering ensemble measurements alone. The use of morphologically controlled particles enabled high-resolution imaging of these materials, uncovering gradients of Ni oxidation states within individual primary particles. At high states of charge, these gradients revealed regions of possible oxygen deficiency extending deeper into the particle than previously observed. Surface-sensitive X-ray coupled scanning tunneling microscopy allows oxidation states to be measured at the material's surface, showing predominantly Ni II in the first atomic layer and mixtures of Ni II with Ni III /Ni IV already appearing 1.5 nm into the particle. These results reveal the subtle interplay between irreversible surface transformations and the bulk reactions that ultimately define function, which will refine strategies of surface passivation that are key to overcoming current performance limitations.
We present the full investigation of the atomic layer deposition (ALD) of a mixed rhenium-aluminum oxide, namely ReAl 2 O 3 CH 3 , a material with tunable resistance, comprising the building unit of conductive rhenium oxides, ReOx. The deposition, involving methyltrioxorhenium(VII) (MeReO 3 , MTO) and trimethylaluminum (TMA), was analyzed by employing complementary in situ diagnostic quartz-crystal microbalance (QCM), Fourier-transform infrared (FT-IR) spectroscopy, and quadrupole mass spectrometry (QMS) to explore and reveal the underlying growth mechanism of this material. A proposed mechanism includes reductive elimination steps, thereby creating a stable Re(III)-containing thin film, making this ALD process unique regarding its growth. In addition, as proven by QMS, the surface reactions include the formation of hydrogen and unsaturated hydrocarbons. From this straightforward process, an extraordinarily high growth rate of 4.5 angstrom cycle -1 at temperatures as low as 150 °C was obtained. This material was found to exhibit highly promising electrical properties in terms of low thermal coefficient of resistance (TCR) in combination with high resistivity. By blending thin films of ReAl 2 O 3 CH 3 with additional layers (1, 2, or 3) of Al 2 O 3 , we were able to fine-tune the electrical resistivity in the range of 3.9 x 10(6) -1.5 x 10 11 Ω.cm. Simultaneously, the TCR was lowered to about -0.014 degrees °C -1 , making this material highly resistive over a broad temperature range and a promising candidate for advanced detector applications, e.g., multichannel plates (MCPs).
In this article the impacts of quantum efficiency and bandwidth of PIN photodiodes under non-uniform illumination conditions are investigated. An absorption region is divided into the number of arbitrary layers and the continuity equations for each layer are solved with assuming that the carrier’s drift velocity is constant in each layer. Also the impact of transit time and capacitive effects of bandwidth were studied with considering the bias voltage, width of absorption region and temperature. The results show that with considering the capacitive effects, the bandwidth is increased by increase in temperature and bias voltage. We observe the effect of incident optical radiation from two n and p sides and also its impact on bandwidth and quantum efficiency. The results show more impact of radiation from n region compared to p region.
Reducing the precious metal content of water oxidation catalysts for proton-exchange-membrane water electrolyzers remains a critical barrier to their large-scale deployment. Herein, we present an engineered architecture for supported iridium catalysts, which enables decreased precious metal content and improved activity and conductivity. The improvement in performance at lower precious metal loading is realized by the deposition of a conformal layer of platinum nanoparticles on titanium dioxide (TiO 2 ) using a facile photoreduction method to prepare conductive layer coated supports (CCSs). Platinum nanoparticles are homogeneously dispersed on TiO 2 , and the conductivity of the subsequent catalysts with 39 wt % precious group metal loadings is significantly higher than the commercial 75 wt % loaded IrO 2 -TiO 2 catalysts. The conformal conductive layer also maintains an enhanced conductivity and electrochemical activity upon thermal annealing when compared to catalysts without the conductive layer and nonconformal heterogeneous conductive layer. The iridium mass activity from half-cell studies shows a 141% improvement for CCS supported catalysts at 42% lower loadings compared to the commercial catalysts. The conductive layer also improves the single cell electrolyzer performance at a similar catalyst loading in comparison to a commercial state-of-the-art catalyst. Here, we correlate the physical properties of the engineered catalysts with their electrochemical performance in electrolyzers to understand structure-activity relationships, and we anticipate further performance improvements upon synthesis and materials optimizations.
Wire-like crystals of tin dioxide were synthesized by a gas-transport technique. The wires, of mainly nanometric diameters, were characterized by spectroscopy and microscopy techniques with the use of highly brilliant and intense synchrotron radiation. We studied the influence of the surface chemical state and the oxygen vacancies on the atomic and electronic structure of the nanowires. The surface of the nanowires is covered by a few nanometers of tin suboxides. The lack of oxygen over the surface layers leads to specific sub-zone formation in a gap, as shown by synchrotron studies.
Using the quasi-static approximation we have found exact analytical solutions to the problem of the field of a point electromagnetic source in the presence of a layer of a bi-isotropic (chiral) metamaterial. At some parameters of the problem, the resulting solution can be represented as a set of several point sources (electric and magnetic), which are images of the original source. If the original source is located near the layer, these images become real sources of the field. This paradoxical solution is then generalised to the case taking into account the retardation effects, which allows one to physically interpret the obtained solutions as a set of sources and 'sinks' of circularly polarised waves. (metamaterials)
Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.
Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.
The dynamics of the earth's magnetotail have been investigated, and it has become clear that the plasmasheet boundary layer field lines map into the Region I Field-Aligned Currents (FAC) of the auroral zone. It is pointed out that the role of earthward streaming ions in the plasmasheet boundary layer may be of fundamental importance in the understanding of magnetotail dynamics, auroral zone physics, and especially for ionospheric-magnetospheric interactions. The present paper has the objective to evaluate propagation characteristics for the earthward streaming ions observed in the plasmasheet boundary layer. An investigation is conducted of the propagation characteristics of protons in the plasmasheet boundary layer using independent single particle dynamics, and conclusions are discussed. The density of earthward streaming ions found in the plasmasheet boundary layer should include the ring current as well as the auroral zone precipitaiton and inner plasmasheet regions of the magnetosphere.
Many natural structures possess self-similar multiscales which can be characterized by power law spectra. Under appropriate conditions, knowledge of the strength of these scale sizes provides information on the physical processes which formed these objects. In this paper, we investigate wave interactions with continuous fractal layers which model geological and variegated structures. Since fractal characteristics of the layers are embedded in the scattered field, they can be retrieved under appropriate conditions. This inversion can be performed in either the frequency or the time domain as desired.