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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,765 records · Page 98
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Ultra-fast solid state electro-optical modulator based on liquid crystal polymer and liquid crystal composites

A different generation of polymer-dispersed liquid crystals (PDLCs) based on a liquid crystalline polymer host is reported wherein the fluid behavior of the reactive mesogenic monomer is an enabler to concentration windows (liquid crystal polymer/liquid crystal) (and subsequent morphologies) not previously explored. These liquid crystal (LC) polymer/LC composites, LCPDLCs, exhibit excellent optical and electro-optical properties with negligible scattering losses in both the ON and OFF states. These systems thus have application in systems where fast phase modulation of optical signal instead of amplitude control is needed. Polarized optical microscopy and high resolution scanning electron microscopy confirm a bicontinuous morphology composed of aligned LC polymer coexisting with a phase separated LC fluid. Operating voltages, switching times, and spectra of LCPDLCs compare favourably to conventional PDLC films. The LCPDLCs exhibit a low switching voltage (4–5 V/μm), symmetric and submillisecond (200 μs) on/off response times, and high transmission in both the as formed and switched state in a phase modulation geometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modification of modulated plasma plumes for the quasi-phase-matching of high-order harmonics in different spectral ranges

We demonstrate the technique allowing the fine tuning of the distance between the laser-produced plasma plumes on the surfaces of different materials, as well as the variation of the sizes of these plumes. The modification of plasma formations is based on the tilting of the multi-slit mask placed between the heating laser beam and target surface, as well as the positioning of this mask in the telescope placed on the path of heating radiation. The modulated plasma plumes with the sizes of single plume ranging between 0.1 and 1 mm were produced on the manganese and silver targets. Modification of the geometrical parameters of plasma plumes proved to be useful for the fine tuning of the quasi-phase-matched high-order harmonics generated in such structures during propagation of the ultrashort laser pulses. We show the enhancement of some groups of harmonics along the plateau range and the tuning of maximally enhanced harmonic by variable modulation of the plasma.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Modulated ferromagnetic ordering and the magnetocaloric response of Eu{sub 4}PdMg

Neutron powder diffraction confirms that the primary ordering mode in Eu{sub 4}PdMg is ferromagnetic with a europium moment of 6.5(2) μ{sub B}. {sup 151}Eu Mössbauer spectroscopy shows that the unusual linear temperature dependence of the magnetisation reported for this system is an intrinsic property and not an artefact of the applied field. The form and temperature evolution of the {sup 151}Eu Mössbauer spectra strongly suggest that there is an incommensurate modulation to the magnetic structure that modifies the basic ferromagnetic order. This modulated structure may be the origin of the broad magnetocaloric response previously observed in Eu{sub 4}PdMg.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Voltage modulation of propagating spin waves in Fe

The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ground-state modulation-enhancement by two-state lasing in quantum-dot laser devices

We predict a significant increase of the 3 dB-cutoff-frequency on the ground-state lasing wavelength for two-state-lasing quantum-dot lasers using a microscopically motivated multi-level rate-equation model. After the onset of the second lasing line, the excited state acts as a high-pass filter, improving the ground-state response to faster modulation frequencies. We present both numerically simulated small-signal and large-signal modulation results and compare the performance of single and two-state lasing devices. Furthermore, we give dynamical arguments for the advantages of two-state lasing on data-transmission capabilities.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Effect of dynamical non-neutrality on the modulational instability of laser propagating through hot magnetoplasma

In this work, modulational instability of a laser pulse in a hot magnetized plasma is investigated. Nonlinear relativistic equation, describing the amplitude evolution of a laser with finite longitudinal and transversal structure, is obtained. Taking into account the plasma dynamical non-neutrality caused by the ponderomotive force, the growth rate of the modulational instability is derived. Effect of the pulse length on the instability growth rate is investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Instability of nonplanar modulated dust acoustic wave packets in a strongly coupled nonthermal dusty plasma

Cylindrical and spherical amplitude modulations of dust acoustic (DA) solitary wave envelopes in a strongly coupled dusty plasma containing nonthermal distributed ions are studied. Employing a reductive perturbation technique, a modified nonlinear Schrödinger equation including the geometrical effect is derived. The influences of nonthermal ions, polarization force, and the geometries on the modulational instability conditions are analyzed and the possible rogue wave structures are discussed in detail. It is found that the spherical DA waves are more structurally stable to perturbations than the cylindrical ones. Possible applications of these theoretical findings are briefly discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance of the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Surface plasmon polariton excitation by electrostatic modulation and phase grating in indium-tin-oxide coated lithium niobate slabs

Excitation of surface plasmon polaritons (SPPs) in a non-metal system in visible regime is discussed. With the assistance of phase grating resulted from photorefractive effect and electrostatic modulation of ITO induced by strong photovoltaic effect in iron-doped LiNbO{sub 3}, phase matching condition could be satisfied for SPP excitation in this semiconductor/dielectric system. Both the phase grating instead of metal grating and electrostatic modulation of semiconductor could be used for the design of tunable plasmonic devices based on nonlinear photorefractive crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Work function contrast and energy band modulation between amorphous and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} films

The work function (WF) is of crucial importance to dominate the carrier transport properties of the Ge-Sb-Te based interfaces. In this letter, the electrostatic force microscopy is proposed to extract the WF of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films with high spatial and energy resolution. The measured WF of as-deposited amorphous GST is 5.34 eV and decreases drastically after the amorphous GST is crystallized by annealing or laser illumination. A 512 × 512 array 2D-WF map is designed to study the WF spatial distribution and shows a good consistency. The WF contrast between a-GST and c-GST is ascribed to band modulation, especially the modification of electron affinity including the contribution of charges or dipoles. Then, the band alignments of GST/n-Si heterostructures are obtained based on the Anderson's rule. Due to the band modulation, the I-V characteristics of a-GST/Si heterojunction and c-GST/Si heterojunction are very different from each other. The quantitative relationship is calculated by solving the Poisson's equation, which agrees well with the I-V measurements. Our findings not only suggest a way to further understand the electrical transport properties of Ge-Sb-Te based interfaces but also provide a non-touch method to distinguish crystalline area from amorphous matrix with high spatial resolution.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration

The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Measurement of LHCD edge power deposition through modulation techniques on Alcator C-Mod

The efficiency of LHCD on Alcator C-Mod drops exponentially with line average density. At reactor relevant densities (> 1 · 1020 [m{sup −3}]) no measurable current is driven. While a number of causes have been suggested, no specific mechanism has been shown to be responsible for the loss of current drive at high density. Fast modulation of the LH power was used to isolate and quantify the LHCD deposition within the plasma. Measurements from these plasmas provide unique evidence for determining a root cause. Modulation of LH power in steady plasmas exhibited no correlated change in the core temperature. A correlated, prompt response in the edge suggests that the loss in efficiency is related to a edge absorption mechanism. This follows previous results which found the generation of n{sub ||}-independent SOL currents. Multiple Langmuir probe array measurements of the conducted heat conclude that the lost power is deposited near the last closed flux surface. The heat flux induced by LH waves onto the outer divertor is calculated. Changes in the neutral pressure, ionization and hard X-ray emission at high density highlight the importance of the active divertor in the loss of efficiency. Results of this study implicate a mechanism which may occur over multiple passes, leading to power absorption near the LCFS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation

In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B < 1 T. We have found that zero-resistance states (ZRSs) appear under the microwave radiation in the 2D systems with a unidirectional periodic modulation. These ZRSs are located at the minima of commensurability oscillations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electric field-induced transport modulation in VO{sub 2} FETs with high-k oxide/organic parylene-C hybrid gate dielectric

We report on the observation of reversible and immediate resistance switching by high-k oxide Ta{sub 2}O{sub 5}/organic parylene-C hybrid dielectric-gated VO{sub 2} thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO{sub 2} through the electrostatic field-induced transport modulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-speed modulator with interleaved junctions in zero-change CMOS photonics

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗