Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “diffraction”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,765 records · Page 98

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation with ∼2.2 kA/cm{sup 2} threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4.5 W emitted in the main lobe. Means of how to increase the device internal efficiency are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

On some numerical scheme of solving diffraction problem on open and closed screens

In the paper, the problem of diffraction on thin ideally conductive screens is reduced to vector hypersingular integral equation with integral treated in the sense of finite Hadamard value. An numerical scheme to solve the equation is introduced. The scheme is based on piecewise approximation of unknown function. The advantage of the scheme is that integral of singular part is reduced to contour integral which can be analytically calculated so numerical calculation are significantly accelerated. Several examples of resulting numerical experiments are given in comparison with known theoretical and experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural phase transition of ternary dielectric SmGdO{sub 3}: Evidence from angle dispersive x-ray diffraction and Raman spectroscopic studies

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO{sub 3} (SGO) up to 25.7 GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at ∼8.9 GPa. The observed pressure-volume data were fitted with the third order Birch-Murnaghan equation of state yielding zero pressure bulk modulus B{sub 0} = 132(22) and 177(9) GPa for monoclinic (B-type) and hexagonal (A-type) phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the monoclinic to hexagonal phase transition at about 5.24 GPa. The mode Grüneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phases of SGO were calculated using pressure dependent Raman mode analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characteristics of a molybdenum X-pinch X-ray source as a probe source for X-ray diffraction studies

X-ray emission from a molybdenum X-pinch has been investigated as a potential probe for the high pressure states made in dynamic compression experiments. Studies were performed on a novel 300 kA, 400 ns generator which coupled the load directly to a low inductance capacitor and switch combination. The X-pinch load consisted of 4 crossed molybdenum wires of 13 μm diameter, crossed at an angle of 62°. The load height was 10 mm. An initial x-ray burst generated at the wire crossing point, radiated in the soft x-ray range (hυ < 10 keV). This was followed, 2–5 ns later, by at least one harder x-ray burst (hυ > 10 keV) whose power ranged from 1 to 7 MW. Time integrated spectral measurements showed that the harder bursts were dominated by K-alpha emission; though, a lower level, wide band continuum up to at least 30 keV was also present. Initial tests demonstrated that the source was capable of driving Laue diffraction experiments, probing uncompressed samples of LiF and aluminium.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Diffraction and forward physics results of the ATLAS experiment from the Run I

Various aspects of forward physics have been studied by the ATLAS collaboration using data from Run I at the LHC. In this text, main results of four published analyses are summarized, all based on data from proton-proton collisions at √(s)=7 TeV collected in 2010 or 2011. Two analyses deal with the diffractive signature, one based on single-sided events, the other on large rapidity gaps in soft events. In addition, a recent measurement of the total pp cross section using the ALFA subdetector and a recent study of higher-order QCD effects using a jet veto are discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Lessons from LHC elastic and diffractive data

In the light of LHC data, we discuss the global description of all high-energy elastic and diffractive data, using a one-pomeron model, but including multi-pomeron interactions. The LHC data indicate the need of a k{sub t}(s) behaviour, where k{sub t} is the gluon transverse momentum along the partonic ladder structure which describes the pomeron. We also discuss tensions in the data, as well as the t dependence of the slope of dσ{sub el}/dt in the small t domain.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Tension in the LHC diffractive data?

I discuss the LHC diffractive data, and compare it to predicted energy behaviour of various models. I suggest that the so called 'tension' between the experimental results, maybe due to the different Monte Carlo programs used.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

X-ray diffraction, FTIR, UV-VIS and SEM studies on chromium (III) complexes

Five Chromium (III) complexes have been prepared using Schiff base ligands which derived from benzoin and five different amino acids (H{sub 2}N-R). Samples were characterized by XRD, FTIR, UV-VIS and SEM method. X-Ray diffraction pattern analyzed that all chromium (III) complexes have hexagonal structure and crystalline, in nature, using Bruker D8 Advance instrument. Using VERTAX 70, FTIR spectroscopy reveals that Samples have (C=N), (C-O), (M-N) and (M-O) bonds in the range of 4000-400cm{sup −1}. UV-VIS spectroscopy give information that samples absorb the visible light which is in the range of 380-780nm. For this, Lambda 960 spectrometer used. SEM is designed for studying of the solid objects, using JEOL JSM 5600 instrument.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of low temperature and high magnetic field X-ray diffraction facility

The current progress of materials science regarding multifunctional materials (MFM) has put forward the challenges to understand the microscopic origin of their properties. Most of such MFMs have magneto-elastic correlations. To investigate the underlying mechanism it is therefore essential to investigate the structural properties in the presence of magnetic field. Keeping this in view low temperature and high magnetic field (LTHM) powder x-ray diffraction (XRD), a unique state-of-art facility in the country has been developed at CSR Indore. This setup works on symmetric Bragg Brentano geometry using a parallel incident x-ray beam from a rotating anode source working at 17 kW. Using this one can do structural studies at non-ambient conditions i.e. at low- temperatures (2-300 K) and high magnetic field (+8 to −8 T). The available scattering angle ranges from 5° to 115° 2θ with a resolution better than 0.1°. The proper functioning of the setup has been checked using Si sample. The effect of magnetic field on the structural properties has been demonstrated on Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} sample. Clear effect of field induced phase transition has been observed. Moreover, the effect of zero field cooled and field cooled conditions is also observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

X-ray diffraction and Raman scattering study of Cr-doped ZnFe{sub 2}O{sub 4} spinel ferrites

XRD and Raman scattering measurements were made on polycrystalline ZnFe{sub 2-x}Cr{sub x}O{sub 4} (x=0.0, 0.1, 0.2) spinel ferrites as prepared by solid-state reaction route. Rietveld refined X-ray diffraction pattern confirmed the formation of single-phase and are indexed in cubic structure with Fd3m space group. Slight reduction in the lattice parameter from 8.435 to 8.410 Ǻ, with Cr{sup 3+} ion substitution has been observed. From Raman scattering spectra, the modes of ZnFe{sub 1.9}Cr{sub 0.1}O{sub 4} and ZnFe{sub 1.8}Cr{sub 0.2}O{sub 4} are shifted towards the lower frequency side as compared to ZnFe{sub 2}O{sub 4}, this red shift is attributed to higher atomic mass of Zn (65.39 amu) as compared to Fe (55.84 amu)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revisiting the blocking force test on ferroelectric ceramics using high energy x-ray diffraction

The blocking force test is a standard test to characterise the properties of piezoelectric actuators. The aim of this study is to understand the various contributions to the macroscopic behaviour observed during this experiment that involves the intrinsic piezoelectric effect, ferroelectric domain switching, and internal stress development. For this purpose, a high energy diffraction experiment is performed in-situ during a blocking force test on a tetragonal lead zirconate titanate (PZT) ceramic (Pb{sub 0.98}Ba{sub 0.01}(Zr{sub 0.51}Ti{sub 0.49}){sub 0.98}Nb{sub 0.02}O{sub 3}). It is shown that the usual macroscopic linear interpretation of the test can also be performed at the single crystal scale, allowing the identification of local apparent piezoelectric and elastic properties. It is also shown that despite this apparent linearity, the blocking force test involves significant non-linear behaviour mostly due to domain switching under electric field and stress. Although affecting a limited volume fraction of the material, domain switching is responsible for a large part of the macroscopic strain and explains the high level of inter- and intra-granular stresses observed during the course of the experiment. The study shows that if apparent piezoelectric and elastic properties can be identified for PZT single crystals from blocking stress curves, they may be very different from the actual properties of polycrystalline materials due to the multiplicity of the physical mechanisms involved. These apparent properties can be used for macroscopic modelling purposes but should be considered with caution if a local analysis is aimed at.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Atomic substitution effects on the structural and vibrational properties of Ni{sub x}Pb{sub 1-x}TiO{sub 3}: X-ray diffraction and Raman scattering investigations

The effects of the atomic substitution of Pb by Ni in the PbTiO{sub 3} ferroelectric perovskite on the vibrational and structural properties was studied using x-ray diffraction and Raman scattering. It was observed that for Ni concentrations between 0.0 and 0.4, there is the formation of a solid solution with reduction of the Raman wavenumber of the E(TO1) soft mode and the tetragonallity factor, which influence directly the temperature of the tetragonal ferroelectric to cubic paraelectric phase transition, the Curie temperature. For concentrations greater than 0.4, it is observed the formation of a PbTiO{sub 3} and NiTiO{sub 3} composite, denounced by the recovering of the both, tetragonallity factor and the E(TO1) soft mode wavenumber. The values of the Curie temperatures were estimated by the Raman scattering measurements for temperatures ranging from 300 to 950 K.

36 MATERIALS SCIENCE↗

Microfluidic sorting of protein nanocrystals by size for X-ray free-electron laser diffraction

The advent and application of the X-ray free-electron laser (XFEL) has uncovered the structures of proteins that could not previously be solved using traditional crystallography. While this new technology is powerful, optimization of the process is still needed to improve data quality and analysis efficiency. One area is sample heterogeneity, where variations in crystal size (among other factors) lead to the requirement of large data sets (and thus 10–100 mg of protein) for determining accurate structure factors. To decrease sample dispersity, we developed a high-throughput microfluidic sorter operating on the principle of dielectrophoresis, whereby polydisperse particles can be transported into various fluid streams for size fractionation. Using this microsorter, we isolated several milliliters of photosystem I nanocrystal fractions ranging from 200 to 600 nm in size as characterized by dynamic light scattering, nanoparticle tracking, and electron microscopy. Sorted nanocrystals were delivered in a liquid jet via the gas dynamic virtual nozzle into the path of the XFEL at the Linac Coherent Light Source. We obtained diffraction to ∼4 Å resolution, indicating that the small crystals were not damaged by the sorting process. We also observed the shape transforms of photosystem I nanocrystals, demonstrating that our device can optimize data collection for the shape transform-based phasing method. Using simulations, we show that narrow crystal size distributions can significantly improve merged data quality in serial crystallography. From this proof-of-concept work, we expect that the automated size-sorting of protein crystals will become an important step for sample production by reducing the amount of protein needed for a high quality final structure and the development of novel phasing methods that exploit inter-Bragg reflection intensities or use variations in beam intensity for radiation damage-induced phasing. This method will also permit an analysis of the dependence of crystal quality on crystal size.

36 MATERIALS SCIENCE↗

Strain in epitaxial Bi{sub 2}Se{sub 3} grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dynamic microscale temperature gradient in a gold nanorod solution measured by diffraction-limited nanothermometry

We quantify the dynamic microscale temperature gradient in a gold nanorod solution using quantum-dot-based microscopic fluorescence nanothermometry. By incorporating CdSe quantum dots into the solution as a nanothermometer, precise temperature mapping with diffraction-limited spatial resolution and sub-degree temperature resolution is achieved. The acquired data on heat generation and dissipation show an excellent agreement with theoretical simulations. This work reveals an effective approach for noninvasive temperature regulation with localized nanoheaters in microfluidic environment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗