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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,765 records · Page 98
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Field orientation dependent magnetic phases in the Weyl semimetal Co 3 ⁢Sn 2 ⁢S 2

Magnetism plays a key role in the emergence of topological phenomena in the Weyl semimetal Co 3 ⁢Sn 2 ⁢S 2 , which exhibits ferromagnetic interactions along the c-axis of the crystal and antiferromagnetic (AFM) interactions within the ab plane. Extensive studies on the temperature dependence of the magnetism with the magnetic field along the c-axis have uncovered a number of magnetic phases. Currently, the nature and origins of the reported magnetic phases are under debate. Here, in this work, we report on magnetic field orientation effects on the magnetism in Co 3 ⁢Sn 2 ⁢S 2 . The shape of the hysteresis loop of the Hall resistance at a fixed temperature is found to change from rectangular to bow tie-like as the magnetic field is tilted from the c-axis toward the ab plane, resembling that reported for magnetic fields along the c-axis as the temperature approaches the Curie temperature from below. Unlike their temperature-dependent counterparts, the newly observed bow tie-like hysteresis loops show exchange bias. Our results showcase the contribution of the in-plane AFM interactions to the magnetism in Co 3 ⁢Sn 2⁢ S 2 and demonstrate a new way to tune its magnetic phases. They also shed light on the temperature-dependent magnetic phases occurring in the magnetic field along the c-axis of the crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Role of Coulomb blockade and spin-flip scattering in tunneling magnetoresistance of FeCo-Si-O nanogranular films

In this work, we report the effect of FeCo atomic fraction (0.33 < x < 0.54) and temperature on the electrical, magnetic, and tunneling magnetoresistance (TMR) properties of FeCo-Si-O granular films prepared by atom beam sputtering technique. Glancing angle x-ray diffraction and TEM studies reveal that films are amorphous in nature. The dipole-dipole interactions (particle-matrix mixing) is evident from zero-field cooled and field-cooled magnetic susceptibility measurements and the presence of oxides (mainly Fe-related) is observed by x-ray photoelectron spectroscopy analysis. The presence of Fe-oxides is responsible for the observed reduction of saturation magnetization and rapid increase in coercivity below 50 K. TMR has been observed in a wide temperature range, and a maximum TMR of -4.25% at 300 K is observed for x = 0.39 at a maximum applied field of 60 kOe. The fast decay of maximum TMR at high temperatures and lower TMR values at 300 K when compared to P{sub FeCo}{sup 2}/(1+P{sub FeCo}{sup 2}), where P{sub FeCo} is the spin polarization of FeCo are in accordance with a theoretical model that includes spin-flip scattering processes. The temperature dependent study of TMR effect reveals a remarkably enhanced TMR at low temperatures. The TMR value varies from -2.1% at 300 K to -14.5% at 5 K for x = 0.54 and a large MR value of -18.5% at 5 K for x = 0.39 is explained on the basis of theoretical models involving Coulomb blockade effects. Qualitatively particle-matrix mixing and the presence of Fe-oxides seems to be the source of spin-flip scattering, responsible for fast decay of TMR at high temperatures. A combination of higher order tunneling (in Coulomb blockade regime) and spin-flip scattering (high temperature regime) explains the temperature dependent TMR of these films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Resonant Enhancement of Charge Density Wave Diffraction in the Rare-Earth Tri-Tellurides

We performed resonant soft X-ray diffraction on known charge density wave (CDW) compounds, rare earth tri-tellurides. Near the M{sub 5} (3d - 4f) absorption edge of rare earth ions, an intense diffraction peak is detected at a wavevector identical to that of CDW state hosted on Te{sub 2} planes, indicating a CDW-induced modulation on the rare earth ions. Surprisingly, the temperature dependence of the diffraction peak intensity demonstrates an exponential increase at low temperatures, vastly different than that of the CDW order parameter. Assuming 4f multiplet splitting due to the CDW states, we present a model to calculate X-ray absorption spectrum and resonant profile of the diffraction peak, agreeing well with experimental observations. Our results demonstrate a situation where the temperature dependence of resonant X-ray diffraction peak intensity is not directly related to the intrinsic behavior of the order parameter associated with the electronic order, but is dominated by the thermal occupancy of the valence states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2017

Thermophysical Properties of Cold and Vacuum Plasma Sprayed Cu-Cr-X Alloys, NiAl and NiCrAlY Coatings: Specific Heat Capacity - Part 2

Part I of the paper discussed the temperature dependencies of the electrical resistivities, thermal conductivities, thermal diffusivities and total hemispherical emissivities of several vacuum plasma sprayed (VPS) and cold sprayed copper alloy monolithic coatings, VPS NiAl, VPS NiCrAlY, extruded GRCop-84 and as-cast Cu-17(wt.%)Cr-5%Al. Part II discusses the temperature dependencies of the constant pressure specific heat capacities, CP, of these coatings. The data were empirically were regression-fitted with the equation: CP = AT4 + BT3 + CT2 + DT +E where T is the absolute temperature and A, B, C, D and E are regression constants. The temperature dependencies of the molar enthalpy, molar entropy and Gibbs molar free energy determined from experimental values of molar specific heat capacity are reported. Calculated values of CP using the Neumann-Kopp (NK) rule were in poor agreement with experimental data. Instead, a modification of the Neumann-Kopp rule was found to predict values closer to the experimental data with an absolute deviation less than 6.5%. The specific molar heat capacities for all the alloys did not agree with the Dulong-Petit law, and CP is greater than 3R, where R is the universal gas constant, were measured for all the alloys except NiAl for which CP is less than 3R at all temperatures.

Raj, S. V.↗
DOE OSTI2016

Thermophysical properties of Ni-containing single-phase concentrated solid solution alloys

For this research temperature dependent thermophysical properties, including specific heat capacity, lattice thermal expansion, thermal diffusivity and conductivity, have been systematically studied in Ni and eight Ni-containing single-phase face-centered-cubic concentrated solid solution alloys, at elevated temperatures up to 1273 K. The alloys have similar specific heat values of 0.4–0.5 J·g -1 ·K -1 at room temperature, but their temperature dependence varies greatly due to Curie and K-state transitions. The lattice, electronic, and magnetic contributions to the specific heat have been separated based on first-principles methods in NiCo, NiFe, Ni-20Cr and NiCoFeCr. The alloys have similar thermal expansion behavior, with the exception that NiFe and NiCoFe have much lower thermal expansion coefficient in their ferromagnetic state due to magnetostriction effects. Calculations based on the quasi-harmonic approximation accurately predict the temperature dependent lattice parameter of NiCo and NiFe with < 0.2% error, but underestimated that of Ni-20Cr by 1%, compared to the values determined from neutron diffraction. In addition, all the alloys containing Cr have very similar thermal conductivity, which is much lower than that of Ni and the alloys without Cr, due to the large magnetic disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Theoretical study of orbital ordering induced structural phase transition in iron pnictides

We attribute the structural phase transition (SPT) in the parent compounds of the iron pnictides to orbital ordering. Due to anisotropy of the d{sub xz} and d{sub yz} orbitals in the xy plane, orbital ordering makes the orthorhombic structure more favorable and thus inducing the SPT. We consider a one band model Hamiltonian consisting of first and second-nearest-neighbor hopping of the electrons. We introduce Jahn-Tellar (JT) distortion in the system arising due to the orbital ordering present in this system. We calculate the electron Green’s function by using Zuvareb’s Green’s function technique and hence calculate an expression for the temperature dependent lattice strain which is computed numerically and self-consistently. The temperature dependent electron specific heat is calculated by minimizing the free energy of the system. The lattice strain is studied by varying the JT coupling and elastic constant of the system. The structural anomaly is studied through the electron occupation number and the specific heat by varying the physical parameters like JT coupling, lattice constant, chemical potential and hopping integrals of the system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Optical and electrical properties study of sol-gel derived Cu{sub 2}ZnSnS{sub 4} thin films for solar cells

The fabrication of environmental-friendly Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with pure kesterite phase is always a challenge to researchers in the field of solar cells. We introduce a simple non-vacuum sol-gel method to fabricate kesterite CZTS films. Ethylenediamine is used as the chelating agent and stabilizer and plays an important role in preparing stable precursor. X-ray diffraction, Raman and scanning electron microscopy studies suggest that the microstructure and optical properties of CZTS films depend strongly on annealing temperatures. The temperature dependence of conductivity of 500 °C annealed CZTS film shows that the Mott law dominates in the low temperature region and thermionic emission is predominant at high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Thermophysical Properties of Cold- and Vacuum Plasma-Sprayed Cu-Cr-X Alloys, NiAl and NiCrAlY Coatings II: Specific Heat Capacity

Part I of the paper discussed the temperature dependencies of the electrical resistivities, thermal conductivities, thermal diffusivities and total hemispherical emissivities of several vacuum plasma-sprayed (VPS) and cold-sprayed (CS) copper alloy monolithic coatings, VPS NiAl, VPS NiCrAlY, extruded GRCop-84 and as-cast Cu-17(wt.%)Cr-5%Al. Part II discusses the temperature dependencies of the constant-pressure specific heat capacities, C{sub P}, of these coatings. The data were empirically regression-fitted with the equation: C{sub P}=AT{sup 4}+BT{sup 3}+CT{sup 2}+DT+Ewhere T is the absolute temperature and A, B, C, D and E are regression constants. The temperature dependencies of the molar enthalpy, molar entropy and Gibbs molar free energy determined from experimental values of molar specific heat capacity are reported. Calculated values of C{sub P} using the Neumann–Kopp (NK) rule were in poor agreement with experimental data. Instead, a modification of the NK rule was found to predict values closer to the experimental data with an absolute deviation less than 6.5%. The specific molar heat capacities for all the alloys did not agree with the Dulong–Petit law, and C{sub P} > 3R, where R is the universal gas constant, were measured for all the alloys except NiAl for which C{sub P} < 3R at all temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2012

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of Eu substitution on superconductivity in Ba{sub 8−x}Eu{sub x}Al{sub 6}Si{sub 40} clathrates

The silicon clathrate superconductor is uncommon as its structure is dominated by strong Si-Si covalent bonds, rather than the metallic bond, that are more typical of traditional superconductors. To understand the influence of large magnetic moment of Eu on superconductivity for type-I clathrates, a series of samples with the chemical formula Ba{sub 8−x}Eu{sub x}Al{sub 6}Si{sub 40} (x = 0, 0.5, 1, and 2) were synthesised in which Eu occupied Ba sites in cage center. With the increase of Eu content, the cubic lattice parameter decreases monotonically signifying continuous shrinkage of the constituting (Ba/Eu)@Si{sub 20} and (Ba/Eu)@Si{sub 24} cages. The temperature dependence of magnetization at low temperature revealed that Ba{sub 8}Al{sub 6}Si{sub 40} is superconductive with transition temperature at T{sub C} = 5.6 K. The substitution of Eu for Ba results in a strong superconductivity suppression; Eu-doping largely decreases the superconducting volume and transition temperature T{sub C}. Eu atoms enter the clathrate lattice and their magnetic moments break paired electrons. The Curie-Weiss temperatures were observed at 3.9, 6.6, and 10.9 K, respectively, for samples with x = 0.5, 1.0, and 2.0. Such ferromagnetic interaction of Eu can destroy superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Bulk viscosity of strongly interacting matter in the relaxation time approximation

Here, we show how thermal mean field effects can be incorporated consistently in the hydrodynamical modeling of heavy-ion collisions. The nonequilibrium correction to the distribution function resulting from a temperature-dependent mass is obtained in a procedure which automatically satisfies the Landau matching condition and is thermodynamically consistent. The physics of the bulk viscosity is studied here for Boltzmann and Bose-Einstein gases within the Chapman-Enskog and 14-moment approaches in the relaxation time approximation. Constant and temperature-dependent masses are considered in turn. It is shown that, in the small mass limit, both methods lead to the same value of the ratio of the bulk viscosity to its relaxation time. The inclusion of a temperature-dependent mass leads to the emergence of the β λ function in that ratio, and it is of the expected parametric form for the Boltzmann gas, while for the Bose-Einstein case it is affected by the infrared cutoff. This suggests that the relaxation time approximation may be too crude to obtain a reliable form of ς/τ R for gases obeying Bose-Einstein statistics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

Auger Recombination and Amplified Luminescence in InAsSb/InAsSbP Leds at 10–60 K

The Varshni parameters of the temperature dependence of the bandgap energy in the range 10–313 K and the temperature dependence of the spin–orbit splitting energy have been calculated using experimental data obtained for an InAs{sub 0.88}Sb{sub 0.12} active layer. Amplified luminescence was observed in the range 10–35 K for LEDs based on InAs{sub 0.88}Sb{sub 0.12}/InAsSbP heterostructures. The sharp drop in radiation intensity of InAsSb/InAsSbP LEDs at temperatures >32 K was due to extensive growth of the CHCC Auger-recombination process while the CHSH process was the dominant Auger-recombination process at temperatures <35 K.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2017

Spectroscopic Evidence of Alfvén Wave Damping in the Off-limb Solar Corona

We investigate the off-limb active-region and quiet-Sun corona using spectroscopic data. The active region is clearly visible in several spectral lines formed in the temperature range of 1.1–2.8 MK. We derive the electron number density using the line ratio method, and the nonthermal velocity in the off-limb region up to the distance of 140 Mm. We compare density scale heights derived from several spectral line pairs with expected scale heights per the hydrostatic equilibrium model. Using several isolated and unblended spectral line profiles, we estimate nonthermal velocities in the active region and quiet Sun. Nonthermal velocities obtained from warm lines in the active region first show an increase and then later either a decrease or remain almost constant with height in the far off-limb region, whereas nonthermal velocities obtained from hot lines show consistent decrease. However, in the quiet-Sun region, nonthermal velocities obtained from various spectral lines show either a gradual decrease or remain almost constant with height. Using these obtained parameters, we further calculate Alfvén wave energy flux in both active and quiet-Sun regions. We find a significant decrease in wave energy fluxes with height, and hence provide evidence of Alfvén wave damping. Furthermore, we derive damping lengths of Alfvén waves in the both regions and find them to be in the range of 25–170 Mm. Different damping lengths obtained at different temperatures may be explained as either possible temperature-dependent damping or by measurements obtained in different coronal structures formed at different temperatures along the line of sight. Temperature-dependent damping may suggest some role of thermal conduction in the damping of Alfvén waves in the lower corona.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2011

Electronic Structure of Warm Dense Copper Studied by Ultrafast X-Ray Absorption Spectroscopy

We use time-resolved x-ray absorption spectroscopy to investigate the unoccupied electronic density of states of warm dense copper that is produced isochorically through the absorption of an ultrafast optical pulse. The temperature of the superheated electron-hole plasma, which ranges from 4000 to 10 000 K, was determined by comparing the measured x-ray absorption spectrum with a simulation. The electronic structure of warm dense copper is adequately described with the high temperature electronic density of state calculated by the density functional theory. The dynamics of the electron temperature is consistent with a two-temperature model, while a temperature-dependent electron-phonon coupling parameter is necessary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Room temperature synthesis of Mn{sup 2+} doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

Mn{sup 2+} doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn{sup 2+} doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be {approx}1.10 (at. %) corresponding to 40.0 (molar %) of Mn{sup 2+} doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn{sup 2+} doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn{sup 2+} doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn{sup 2+} doped sample shows an enhancement of 33% in PL emission intensity.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 10{sup 19}–10{sup 21} cm{sup −3} while the Hall mobilities ranged from 50–130 cm{sup 2}·V{sup −1}·s{sup −1} for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions.

36 MATERIALS SCIENCE↗