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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,765 records · Page 98
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Enhanced thermoelectric performance of graphene nanoribbon-based devices

There have been numerous theoretical studies on exciting thermoelectric properties of graphene nano-ribbons (GNRs); however, most of these studies are mainly based on simulations. In this work, we measure and characterize the thermoelectric properties of GNRs and compare the results with theoretical predictions. Our experimental results verify that nano-structuring and patterning graphene into nano-ribbons significantly enhance its thermoelectric power, confirming previous predictions. Although patterning results in lower conductance (G), the overall power factor (S{sup 2}G) increases for nanoribbons. We demonstrate that edge roughness plays an important role in achieving such an enhanced performance and support it through first principles simulations. We show that uncontrolled edge roughness, which is considered detrimental in GNR-based electronic devices, leads to enhanced thermoelectric performance of GNR-based thermoelectric devices. The result validates previously reported theoretical studies of GNRs and demonstrates the potential of GNRs for the realization of highly efficient thermoelectric devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions.

Shirazi-HD, M.↗
DOE OSTI2016

Nanostructured wear resistant coating for reversible cultivator shovels: An experimental investigation

Cultivator, one of the agriculture farm tool, extensively suffers from the wear problem. In this paper, we report nanostructured chromium nitrite (CrN) coating for the cultivator shovels to mitigate wear problem. The (CrN) coating was developed using DC magnetron sputtering technique at 200 °C. The structural, morphological, hydrophobic and wear properties were investigated using X-ray diffractometer, scanning electron microscope, contact angle goniometer and custom designed soil bin assembly. The XRD reveals that the deposited coating was polycrystalline in nature with cubic structure. Also, The deposited coating was found to be anti wear resistant as well as hydrophobic in nature. The gravimetric wear for the coating developed at 200 °C coated was found out to be 8.15 gm and for non coated it was 14.48 gm tested for 100 hrs. The roughness of the coating plays an important role in determining the hydrophobicity of the coated film. Roughness and contact angle measured for 200 °C coated shovel was found out to be 11.17 nm and 105 ° respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Activated graphene nanoplatelets as a counter electrode for dye-sensitized solar cells

Activated graphene nanoplatelets (aGNPs) prepared by a hydrothermal method using KOH as activating agent were used as counter electrode for high efficiency dye-sensitized solar cells (DSSCs). After the KOH activation, the scanning electron microscopy image shows that aGNPs demonstrate a more curled, rough, and porous morphology which could contain both micro- and mesopores. The KOH activation changed the stacked layers of GNPs to a more crumpled and curved morphology. The microstructure of large pores significantly increased the electrode surface area and roughness, leading to the high electrocatalytic activity for triiodide reduction at the counter electrode. The DSSCs fabricated using aGNP as counter electrodes were tested under standard AM 1.5 illumination with an intensity of 91.5 mW/cm{sup 2}. The device achieved an overall power conversion efficiency of 7.7%, which is comparable to the conventional platinum counter electrode (8%). Therefore, the low cost and high performance aGNP based counter electrode is a promising alternative to conventional Pt counter electrode in DSSCs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Ti interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

The high performance of polycrystalline CdTe thin film solar cells is enabled by annealing in the presence of Cl. This process is typically carried out for tens of minutes resulting in reduction of defect states within the bandgap among other beneficial effects. In this work, we investigate laser annealing as a means of rapidly annealing CdTe using a continuous wave sub-bandgap 1064 nm laser. The partial transmission of the beam allows us to monitor the annealing process in-situ and in real time. We find that optoelectronic and structural changes occur through two distinct kinetic processes resulting in the removal of deep defects and twinned regions, respectively. A multilayer optical model including surface roughness is used to interpret both the in-situ transmission as well as ex-situ reflectivity measurements. These experiments demonstrate beneficial material changes resulting from sub-bandgap laser-driven CdCl{sub 2} treatment of CdTe in minutes, which is an important step towards accelerating the processing of the CdTe absorber layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Controlled nanopatterning & modifications of materials by energetic ions

Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on the materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence

GaInSb/InAs/AlSb quantum wells (QWs) with typical InSb- and GaAs-like interfaces (IFs) are investigated by temperature- and magnetic field-dependent photoluminescence (PL), respectively. The results show that (i) as temperature rises the PL energy of the QWs with either InSb- or GaAs-like IFs blueshifts slightly below 50 K but redshifts above and broadens rapidly, and the mechanism behind this is correlated to the IF roughness-related layer thickness fluctuation equivalent to a localization energy of about 9.5 meV; (ii) the PL diminishes monotonously as magnetic field rises except for the delocalized PL process of the InSb-like IF QWs, and the magnetic field-induced PL quenching is attributed to the IF roughness-induced electron-hole separation in the type-II QWs; and (iii) the magnetic field-dependent PL energy follows a typical excitonic diamagnetic shift for both located and dislocated states, and the deduced exciton binding energy, reduced effective mass, and average wavefunction extent are insensitive to the IF type. Comparison of different IF-type GaInSb/InAs QWs indicates that while the PL of the InSb-like IF sample contains type-I component as the IF confines heavy holes and acts as pseudo-barrier for electrons, leading to the coexistence of electrons and holes at the IFs, the IF-type does not affect the carrier localization and the in-plane excitonic behavior obviously.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

GeSn-on-insulator substrate formed by direct wafer bonding

GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Experimental comparison of laser energy losses in high-quality laser-oxygen cutting of low-carbon steel using radiation from fibre and CO{sub 2} lasers

We report a comparative experimental study of laseroxygen cutting of low-carbon steel using a fibre laser with a wavelength of 1.07 μm and a CO{sub 2} laser with a wavelength of 10.6 μm at the sheet thickness of 3 – 16 mm. For the two lasers we have measured the dependence of the cutting speed on the radiation power and determined the cutting speed at which the surface roughness is minimal. The coefficient of laser radiation absorption in the laser cutting process is measured for these lasers at different values of the cutting speed and radiation power. It is found that the minimal roughness of the cut surface is reached at the absorbed laser energy per unit volume of the removed material, equal to 11 – 13 J mm{sup -3}; this value is the same for the two lasers and does not depend on the sheet thickness. (laser technologies)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of laser radiation wavelength and reepithelization process on optical quality of eye cornea after laser correction of vision

The optical quality of the eye cornea surface after performing the laser vision correction essentially depends on the characteristic roughness scale (CRS) of the ablated surface, which is mainly determined by the absorption coefficient of the cornea at the laser wavelength. Thus, in the case of using an excimer ArF laser (λ = 193 nm) the absorption coefficient is equal to 39000 cm{sup -1}, the darkening by the dissociation products takes place, and the depth of the roughness relief can be as large as 0.23 mm. Under irradiation with the Er : YAG laser (λ = 2940 nm) the clearing is observed due to the rupture of hydrogen bonds in water, and the relief depth exceeds 1 μm. It is shown that the process of reepithelization that occurs after performing the laser vision correction leads to the improvement of the optical quality of the cornea surface. (interaction of laser radiation with matter)

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2017

Optical Elements: Effect of structural defects of aperiodic multilayer mirrors on the properties of reflected (sub)femtosecond pulses

The effect of structural defects (for example, of interlayer roughness, layer thickness fluctuations and departures of Mo film density from the tabular one) on the amplitude and phase of the complex reflection coefficient as well as on the amplitude and duration of reflected pulses is numerically studied by the example of a model aperiodic Mo/Si multilayer mirror intended for the compression of a chirped pulse with a spectrum lying in a 50 – 80 eV photon energy range. The departures of Mo film density from the tabular values and film thickness fluctuations are shown to exert the strongest effect on the amplitude and duration of the reflected pulses. The interlayer roughness has a comparable effect on the amplitude of the reflection coefficient, but its effect on the duration of reflected pulses is weaker. Even small film thickness fluctuations may give rise to additional reflected pulses of high intensity, which are delayed in time relative to the principal pulse. The Mo-film density in a Mo/Si mirror is shown to vary from 0.77 to 0.97 (in units of the tabular value for massive molybdenum) as the film thickness varies from 1.5 to 5.5 nm. We discuss the key problems that have to be solved in the development of the fabrication technology of multilayer mirrors with desired characteristics. (paper)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films

We report the competing effects of disorder pinning and thermal roughening on ferroelectric domain walls as a function of temperature in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films deposited on (001) SrTiO 3 substrates buffered by three types of correlated oxide electrodes, La 0.67 Sr 0.33 MnO 3 , LaNiO 3 , and SrIrO 3 . Piezo-response force microscopy studies show that the 50 nm PbZr 0.2 Ti 0.8 O 3 films are uniformly polarized in the as-grown states, with the patterned domain structures persisting above 700 °C. For all three types of films, the domain wall roughness is dominated by 2D random bond disorder at room temperature, and transitions to 1D thermal roughening upon heating. The roughness exponent ζ increases progressively from 0.3 to 0.5 within a temperature window that depends on the bottom conducting oxide type, from which we extracted the distribution of disorder pinning energy. Lastly, we discuss the possible origins of the disorder pinning and the effect of the correlated oxide electrodes on the energy landscape of DW motion.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Characterization of metal oxide layers grown on CVD graphene

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2° offset toward<2-1-1> surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2° offset toward<2-1-1> surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions in regards to surface roughness with >92% accuracy. The smoothest InAs/GaAs samples demonstrated average surface roughness of 0.08 nm for 10 μm{sup 2} areas, albeit at very low deposition rates. The authors have found the most important process conditions to be substrate temperature and deposition rate, leading us to believe that controlling diffusion length may be the key to reducing defects in severely strained structures. InGaAs/AlGaAs quantum cascade laser structures were also produced on (111)B with 2° offset toward<2-1-1> to take advantage of the piezoelectric effect, and the modified laser transitions due to these effects were observed.

36 MATERIALS SCIENCE↗