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At least 1,765 records · Page 98

Studies of flows through N-sequential orifices

Critical mass flux and axial pressure profile data for fluid nitrogen are presented for N = 20, 15, 10, and 7 N-sequential-orifice-inlet configurations uniformly spaced at 15.5 cm. These data correlate well over a wide range in reduced temperature and reduced pressure, and are in general agreement with previous studies of one to four inlets. Experimental and theoretical agreement is good for liquid and gas critical mass flux, but inconclusive in the near thermodynamic critical regions.

Hendricks, R. C.↗

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗

Synthesis of N-Substituted Silaneamines: Monomeric Precursors of Silicon Carbide-Nitride Fibers

Silanetriamines are prepared by the condensation of methyl or phenyl trichlorosilane with a primary amine. The amines used were methyl, n-propyl, n-butyl and allyl. The silaneamines were prepared by adding the chlorosilane to a solution of the amine in either petroleum ether or toluene. The compounds were purified by distillation and characterized by infrared and nuclear magnetic resonance spectroscopy.

Crouse, D. J.↗

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

An ICR study of ion-molecule reactions of PH(n)+ ions

The reactions of PH(n)+ ions (n = 0-3) were examined with a number of neutrals using ion-cyclotron-resonance techniques. The reactions examined have significance for the distribution of phosphorus in interstellar molecules. The results indicate that interstellar molecules containing the P-O bond are likely to be more abundant than those containing the P-H bond.

Thorne, L. R.↗

Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

Lindholm, F. A.↗

Stereoselective aminoacylation of a dinucleoside monophosphate by the imidazolides of DL-alanine and N-(tert-butoxycarbonyl)-DL-alanine

The aminoacylation of diinosine monophosphate was studied experimentally. When the acylating agent was the imidazolide of N-(tert-butoxycarbonyl)-DL-alanine, a 40 percent enantiomeric excess of the isomer was incorporated at the 2' site and the positions of equilibrium for the reversible 2'-3' migration reaction differed for the D and L enantiomers. The reactivity of the nucleoside hydroxyl groups was found to decrease on the order 2'(3') less than internal 2' and less than 5', and the extent of the reaction was affected by the concentration of the imidazole buffer. Reaction of IpI with imidazolide of unprotected DL-alanine, by contrast, led to an excess of the D isomer at the internal 2' site. Finally, reaction with the N-carboxy anhydride of DL-alanine occurred without stereoselection. These results are found to be relevant to the study of the evolution of optical chemical activity and the origin of genetically directed protein synthesis.

Profy, A. T.↗

An improved process for preparing Tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibers

A technique is described for the preparation of tris(N-methylamino)methylsilane by a process which may be used for large-scale production. The steps include synthesis, filtration to remove the salt byproduct, and distillation to remove the product from the reaction mixture under anhydrous conditions. Tris(N-methylamino)methylsilane is a precursor used to prepare silicon carbide-silicon nitride fibers that have been shown to have high tensile modulus (29 x 10 to the 6th psi for 0.4 mil diameter), high tensile strength (10.5 x 10 to the 4th psi), and high electrical resistivity (7 x 10 to the 8th ohm-cm).

Penn, B. G.↗

A unified N-body and statistical treatment of stellar dynamics. I - The hybrid code. II - Applications to globular cluster cores

A unified N-body and statistical treatment of stellar dynamics is developed and applied to the late stages of core collapse and early stages of post collapse evolution in globular clusters. A 'hybrid' computer code is joined to a direct N-body code which is used to calculate exactly the behavior of particles in the inner spatial region, and the combination is used to follow particles statistically in the outer spatial region. A transition zone allows the exchange of particles and energy between the two regions. The main application results include: formation of a hard central binary system, reversal of core collapse and expansion due to the heat input from this binary, ejection of the binary from the core, and recollapse of the core; density profiles that form a one-parameter sequence during the core oscillations; and indications that these oscillations will eventually cease.

Mcmillan, S. L. W.↗

Biocatalyzed processes for production of commodity chemicals: Assessment of future research advances for N-butanol production

This report is a summary of assessments by Chem Systems Inc. and a further evaluation of the impacts of research advances on energy efficiency and the potential for future industrial production of acetone-butanol-ethanol (ABE) solvents and other products by biocatalyzed processes. Brief discussions of each of the assessments made by CSI, followed by estimates of minimum projected energy consumption and costs for production of solvents by ABE biocatalyzed processes are included. These assessments and further advances discussed in this report show that substantial decreases in energy consumption and costs are possible on the basis of specific research advances; therefore, it appears that a biocatalyzed process for ABE can be developed that will be competitive with conventional petrochemical processes for production of n-butanol and acetone. (In this work, the ABE process was selected and utilized only as an example for methodology development; other possible bioprocesses for production of commodity chemicals are not intended to be excluded.) It has been estimated that process energy consumption can be decreased by 50%, with a corresponding cost reduction of 15-30% (in comparison with a conventional petrochemical process) by increasing microorganism tolerance to n-butanol and efficient recovery of product solvents from the vapor phase.

Ingham, J. D.↗

Process for producing tris s(n-methylamino) methylsilane

A method of producing tris (N-methylamine) methylsilane is described including the steps of forming and cooling a liquid solution of methylamine in an inert solvent and under an inert atmosphere at a temperature of about -30 C and slowly adding a quantity of methyltricholorosilane while maintaining said temperature. The reaction mixture is then heated for about 60 minutes at a temperature of about 40 C, followed by filtering the solid portion from the liquid portion. The liquid is distilled to remove the solvent, resulting in a high yield of tris (N-methylamine) methylsilane.

Clemons, J. M.↗

Science opportunities using the NASA scatterometer on N-ROSS

The National Aeronautics and Space Administration scatterometer (NSCAT) is to be flown as part of the Navy Remote Ocean Sensing System (N-ROSS) scheduled for launch in 1989. The NSCAT will provide frequent accurate and high-resolution measurements of vector winds over the global oceans. NSCAT data will be applicable to a wide range of studies in oceanography, meteorology, and instrument science. The N-ROSS mission, is outlined, are described. The capabilities of the NSCAT flight instrument and an associated NASA research ground data-processing and distribution system, and representative oceanographic meteorological, and instrument science studies that may benefit from NSCAT data are surveyed.

Freilich, M. H.↗

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗

Ionic charge states of N, Ne, Mg, Si and S in solar energetic particle events

The mean ionic charges and source-region temperatures of flare-accelerated N, Ne, Mg, Si and S in three large solar-energetic-particle events during 1978-1979 are determined from ISEE-3 observations, extending the findings of Hovestadt et al. (1981) and Gloeckler et al. (1981) for C, He, O, and Fe. The results are presented in tables and graphs, and the charge states are shown to correspond to different source temperatures even in the same flare, assuming equilibration in the hot plasma. The electron temperatures range from 2 x 10 to the 6th K for C, N, O, Si, and S, 4 x 10 to the 6th K for Ne and Fe, and 7 x 10 to the 6th K for Mg. The possibility that these temperature inconsistencies reflect different stages in the approach to equilibrium is considered.

Luhn, A.↗

Formation of planar n(+) pockets in GaAs for mixer diode fabrication

A novel technique has been developed to produce n(+) 'pockets' in semiinsulating GaAs bulk material. This technique has produced thick pockets of highly conducting epitaxial material on the substrate surface. The pockets were formed by the growth of a liquid-phase epitaxial (LPE) layer into holes which had been etched into the substrate. Surface uniformity was obtained by chemo-mechanically polishing the substrate surface under tightly controlled conditions. Polishing rates as low as 0.2 micron/min have been obtained. Photographs taken of the pocket cross-sectional area have revealed that growth occurred throughout the entire pocket region. Growth was even found to have occurred along the irregularly shape walls of the packets. The continuous growth throughout the pockets coupled with the subsequent polishing of the substrate have produced exceptionally smooth and planar surfaces. Thicknesses as great as 10 microns have been obtained for the n(+) pockets using this technique. Mixer diodes have been fabricated onto these layers and tested. Preliminary dc measurements taken on these devices have yielded a zero-biased cutoff frequency (Fco) of 800 GHz with a series resistance (Rs) of 6 omega and a zero-biased capacitance (Co) of 30 fF.

Griffin, J. A.↗

High temperature resistant polyimide from tetra ester, diamine, diester and N-arylnadimide

The invention described relates to improved polyimide resins which are noted for their high thermal and oxidative stability, high strength at elevated temperatures and which exhibit many other outstanding physical and chemical properties, especially useful in high temperature applications. The polyimides are prepared by the reaction, with application of heat of a mixture of monomers comprising: (1) a dialkyl or tetraalkyl ester of an aromatic tetracarboxylic acid, (2) and aromatic diamine, (3) a monoalkyl or dialky ester of a dicarboxylic acid, and (4) a N-arylnadimide such as N-phenylnadimide. Polyimides of monomers (1), (2) and (3) are known.

Pater, R. H.↗

Method for producing tetraphenoxide-n-aniloxy cyclo phosphazotriene

A method for producing tetraphenoxide-n-aniloxy cyclophosphazotriene, distinguished by the fact that tetraphenoxide dichlorocyclophosphazotriene is processed with an alkaline metal n-acetamidophenolate in an organic solvent, for example pyridine, during heating, after which the resulting compound is saponified in the present of a mineral or organic acid, for example, hydrochloric, and the desired product separated by well known techniques.

Khofbauer, Y. I.↗