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At least 1,765 records · Page 98
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Depinning, melting, and sliding of generalized Wigner crystals in Moiré systems

We numerically examine the depinning, sliding, and melting of commensurate and incommensurate Wigner crystals on two-dimensional hexagonal periodic substrates near fillings of 1 / 3 , 1 / 2 , and 2 / 3 to model the dynamics of generalized Wigner crystals in moiré heterostructures. At low temperatures where thermal fluctuations are irrelevant, for commensurate fillings we find a strongly pinned state that depins into a sliding crystal, while at incommensurate fillings the depinning threshold is strongly reduced. For fillings below 1 / 2 , the depinning occurs in a two-step process. Above the first depinning threshold, there is an extended range of drives where the conduction occurs via the sliding of antikinks along the charge stripes, followed by a second threshold where all the charges begin to slide. At finite temperatures, the external driving reduces the effective melting temperature at commensurate fillings and enhances creep at incommensurate fillings. We show that depinning into different sliding states, such as moving fluids or moving crystals, produces nonlinear features in the transport curves. We also show that transport is asymmetric on either side of a commensurate filling due to the different dynamics for interstitials versus holes in the commensurate structure. A variety of sliding states should be accessible for generalized Wigner crystals at finite temperatures even for low drives. If experiments can realize sliding dynamics in moiré systems, it would open another class of commensurate and incommensurate phases for study. Additionally, the sliding dynamics and antikink flow could provide unique functionalities for charge transport in moiré heterostructures. Published by the American Physical Society 2025

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Competing magnetic phases in Cr 3+𝛿 ⁢Te 4 are spatially segregated

Cr 1+𝑥⁢ Te 2 is a self-intercalated van der Waals system that is of current interest for its room-temperature room-temperature ferromagnetic (FM) phases and tunable topological properties. In bulk samples, the strain from the interstitial Cr ions leads to distinct structural phases for different ranges of 𝑥. Early neutron powder diffraction (NPD) measurements on the monoclinic phase Cr 3 ⁢Te 4 (𝑥=0.5) presented evidence for competing FM and antiferromagnetic (AFM) phases. Here we apply neutron diffraction to a single crystal of Cr 3+𝛿 ⁢Te 4 with 𝛿=−0.10 and discover that it consists of two distinct monoclinic phases, one with FM order below 𝑇 C ≈321 K and another that develops AFM order below 𝑇 N ≈86 K. In contrast, we find that a crystal with 𝛿=−0.26 exhibits only FM order below 𝑇 C ≈285 K. The single-crystal analysis is complemented by results obtained with NPD, x-ray powder diffraction, and transmission electron microscopy (TEM) measurements on the 𝛿=−0.10 composition. From observations of spontaneous magnetostriction of opposite sign at 𝑇 C and 𝑇 N , along with the TEM evidence for both monoclinic phases in a single thin ( ≈100 nm) grain, we conclude that the two phases must have a fine-grained ( ≲100 nm) intergrowth character, as might occur from high-temperature spinodal decomposition during the growth process. Calculations of the relaxed lattice structures for the FM and AFM phases with density functional theory provide a rationalization of the observed spontaneous magnetostrictions. Correlations between the magnitude and orientation of the magnetic moments with lattice parameter variation demonstrate that the magnetic orders are sensitive to strain, thus explaining why magnetic ordering temperatures and anisotropies can be different between bulk and thin-film samples, when the latter are subject to epitaxial strain. Our results point to the need to investigate the supposed coexistence FM and AFM phases reported elsewhere in the Cr 1+𝑥 ⁢Te 2 system, such as in the Cr 5 ⁢Te 8 phase (𝑥=0.25).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Carbon-nitrogen complex as an alternative to the 𝑇 center in Si

A first-principles study of a carbon-nitrogen (CN) impurity complex in silicon is presented as an isoelectronic alternative to the T center [(CCH) Si ]. The latter has been pursued for applications in quantum information science, yet its sensitivity to the presence of hydrogen is still problematic. Our proposed complex has no hydrogen, thereby eliminating this issue. First, we show that the CN complex is stable against decomposition into substitutional and interstitial defects. Next, we show that due to being isoelectronic to the T center, the CN complex has a similar electronic structure, and therefore could be used in similar applications. We assess several low-energy configurations of the CN complex, finding (CN) Si to be stable and have the largest Debye-Waller factor. We predict a zero-phonon line (ZPL) of 828 meV (in the telecom S-band) and a radiative lifetime of 4.2 μs, comparable to the T center. Due to the presence of a bound exciton, choice of the exchange-correlation functional and also supercell-size scaling of the ZPL and transition dipole moment require special scrutiny; we rigorously justify our extrapolation schemes that allow computing values in the dilute limit.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Polymorphism of Pb 5 (PO 4 ) 3 OH δ within the LK-99 mixture

During the synthetic exploration targeting the polycrystalline compound LK-99, an unexpected phase, Pb 5 (PO 4 ) 3 OH δ , was identified as a byproduct. We elucidated the composition of this compound through single-crystal X-ray diffraction analysis. Subsequent synthesis of the target compounds was achieved via high-temperature solid-state pellet reactions. The newly identified Pb 5 (PO 4 ) 3 OH δ has an orthorhombic crystal structure with space group Pnma , representing a unique structure differing from the hexagonal apatite phases of Pb 10 (PO 4 ) 6 O and Pb 5 (PO 4 ) 3 OH. Comprehensive temperature- and magnetic-field-dependent magnetization studies unveiled a temperature-independent magnetic characteristic of Pb 5 (PO 4 ) 3 OH δ . Solid-state nuclear magnetic resonance spectroscopy was employed to decipher the origins of the phase stability and confirm the presence of hydrogen atoms in Pb 5 (PO 4 ) 3 OH δ . These investigations revealed the presence of protonated oxygen sites, in addition to the interstitial water molecules within the structure, which may play critical roles in stabilizing the orthorhombic phase.

Xu, Mingyu (ORCID:0000000171386009)↗
DOE OSTI2017

Synthesis and structure determination of Ce 6 Cd 23 Te: a new chalcogen-containing member of the RE 6 Cd 23 T family ( RE is a rare-earth metal and T is a late group 14, 15 and 16 element)

The ternary phase hexacerium tricosacadmium telluride, Ce 6 Cd 23 Te, was synthesized by a high-temperature reaction of the elements in sealed Nb ampoules and was structurally characterized by powder and single-crystal X-ray diffraction. The structure, established from single-crystal X-ray diffraction methods, is isopointal with the Zr 6 Zn 23 Si structure type (Pearson symbol cF 120, cubic space group Fm -3 m ), a filled version of the Th 6 Mn 23 structure with the same space group and Pearson symbol cF 116. Though no Cd-containing rare-earth metal binaries are known to form with this structure, it appears that the addition of small amounts of a p -block element allows the formation of such interstitially stabilized ternary compounds. Temperature-dependent direct current (dc) magnetization measurements suggest local-moment magnetism arising from the Ce 3+ ground state, with possible valence fluctuations at low temperature, inferred from the deviations from the Curie–Weiss law.

Chemistry↗
DOE OSTI2016

Ab Initio Study of Carbon Impurities in Cu$_2$ ZnSnS$_4$

Cu 2 ZnSnS 4 (CZTS) is a highly promising absorber material for efficient and low-cost solar cells. In a cost-effective method of production of high-quality CZTS, nanocrystals of precursor compounds, solved in an amine solution, are deposited on a substrate and sulfurized. Here, this can generally lead to considerable residual carbon in the final samples, in the form of separate amorphous layers as observed experimentally, but also incorporated in the CZTS matrix. In this study, preferred configurations, bonding characteristics, formation energies, and ionization levels of carbon-related defects in CZTS are calculated, including interstitials, single- and double-carbon antisites, and complexes of those with intrinsic defects. For different growth conditions of carbon, the set of dominant defects is determined, and the resulting total carbon concentrations are discussed with respect to experimental values.

36 MATERIALS SCIENCE↗
DOE OSTI2016

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si.

14 SOLAR ENERGY↗
DOE OSTI2018

Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride

Using experiments and theory, we analyze 'carrier-lifetime-killer' semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. For the Cd-rich stoichiometry, the concentration of lifetime-limiting [Te Cd ] is =10 13 cm -3 . For the Te-rich stoichiometry, we find a smaller hole-capture rate constant than predicted by theory, which could be because of Te Cd association with the Te interstitials. We also compare PL emission spectra, carrier lifetimes, and radiative efficiencies for Cu, P, and As doping and analyze the microscopic distribution of carrier lifetimes in As-doped single-crystal CdTe. In all the cases examined here, point defects are the dominant bulk recombination centers. Carrier lifetimes are the longest in undoped CdTe, but radiative efficiencies are the highest with group-V doping.

14 SOLAR ENERGY↗
DOE OSTI2022

CUF-Links: Continuous and Ubiquitous FAIRness Linkages for Reproducible Research

Despite much creative work on methods and tools, reproducibility— the ability to repeat the computational steps used to obtain a research result—remains elusive. One reason for these difficulties is that extant tools for capturing research processes, while powerful, often fail to capture vital connections as research projects grow in extent and complexity. We explain here how these interstitial connections can be preserved via simple methods that integrate easily with current work practices to capture basic information about every data product consumed or produced in a project. By thus extending the scope of findable, accessible, interoperable, and reusable (FAIR) data in both time and space to enable the creation of a continuous chain of Continuous and Ubiquitous FAIRness linkages (CUFlinks) from inputs to outputs, such mechanisms can facilitate capture of the provenance linkages that are essential to reproducible research. Herein we give examples of mechanisms that can facilitate the use of these methods, and review how they have been applied in practice.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2012

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true,reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ticontact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may bea more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

14 SOLAR ENERGY↗
DOE OSTI2018

First-Principles Study of Intrinsic and Extrinsic Point Defects in Lead-Based Hybrid Perovskites.

Intrinsic and extrinsic defects play a major role in determining solar cell efficiencies of lead halide hybrid perovskite absorbers. Here, we present the results of first-principles computations performed on MAPbBr3 (MA = methylammonium) to study the energetics and defect levels of intrinsic point defects, namely vacancy, self-interstitial and anti-site, and extrinsic Pb-substitution defects. While vacancies are the lowest formation energy intrinsic defects and create shallow transition levels, a number of extrinsic defects can have comparable formation energies under desirable chemical potential conditions. therefore, carrier concentrations may be tunable with these substituents. Further, some extrinsic defects create deeper transition levels which can potentially be exploited to enhance solar cell efficiencies via sub-gap absorption.

density functional theory↗
DOE OSTI2020

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

14 SOLAR ENERGY↗
DOE OSTI2023

Effect of Strain on the Resistivity and Thermal Conductivity of High Purity Niobium

High purity niobium (Nb) is a technologically important material for large-scale accelerator and nano-scale quantum computing applications in microwave frequency range. The high thermal conductivity and low resistivity of Nb are critical to the high performance at temperature range of 0.01–4.0 K. The presence of interstitials such as O, N, H, and C act as scattering centers and alter the mean free path, reducing resistivity and thermal conductivity, and contributing significantly to Nb's thermal performance for temperatures of 2.0 K and above. The residual resistivity ratio (RRR), defined as the ratio of the normal state resistivity at 300 K to that at 4.2 K (Nb, T c = 9.2 K), is an accepted direct estimate of the impurity content of fully recrystallized Nb. Complete re-crystallization of Nb is challenging unless very high temperatures are employed, which is often impractical, hence, in practice, dislocation and dislocation structures impact the thermal performance of Nb due to strong phonon scattering contributions. Furthermore, this paper reports on the degradation of thermal conductivity and RRR of high purity Nb large grain, single crystal with fixed impurity, varying strain, and dislocation content levels. Experimental thermal conductivity data fits the Boltzmann transport equation incorporating dislocation density.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Material Plasma Exposure eXperiment (MPEX) High Heat Flux Bellows for Component Alignment in High Microwave Environment

The Material Plasma Exposure eXperiment (MPEX) device is a linear plasma device developed to perform plasma material interaction experiments under the conditions prototypic of a fusion reactor divertor. MPEX has multiple systems that must be precisely aligned to the plasma axis, including an electron cyclotron heating system that emits up to 400 kW of microwave power into the vacuum vessel. Five distinct systems require precise alignment on the MPEX device, thus requiring four bellows, all of which are adjacent to the plasma at a relatively high heat flux of approximately 47 kW/m2 and microwave power regions. The MPEX high heat flux bellows (HHFB) is designed to deliver 6 degrees of freedom positioning. The HHFB includes titanium–zirconium–molybdenum (TZM) inserts that are brazed into a Glidcop AL-15 body using a high-temperature braze alloy, thus blocking direct line of sight to an edge-welded bellows from the plasma and microwave screen to block microwaves from the bellows. Further, a custom ConFlat knife edge is machined into the Glidcop AL-15, so the vacuum flanges do not need a braze or weld joint on the vacuum interface. Fingerstock or copper mesh is used to restrict microwave power from entering the interstitial space between the water-cooled Glidcop AL-15 body and edge-welded bellows. Glidcop AL-15 was selected as the material of choice for the water-cooled body because it can maintain mechanical integrity at elevated temperatures, and it also allows for a high-temperature braze. TZM was selected for its machinability and compatibility with vacuum and plasma requirements. A test article is also being considered for a similarly shaped component, the MPEX limiter, that will demonstrate the integrity of the braze joint under high thermal load. Results from this testing will be extrapolated to deduce the lifetime and integrity of the HHFB design.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Combining glomerular basement membrane and tubular basement membrane assessment improves the prediction of diabetic end‐stage renal disease

Abstract Background To address the prognostic value of combining tubular basement membrane (TBM) and glomerular basement membrane (GBM) thickness in diabetic nephropathy (DN). Methods This retrospective study enrolled 110 patients with type 2 diabetes and biopsy‐proven DN from 2011 to 2018. The pathological findings were confirmed according to the Renal Pathology Society classifications. GBM and TBM thicknesses were determined using the Haas' direct measurement/arithmetic mean method and orthogonal intercept method, respectively. Cox proportional hazard models were used to investigate the hazard ratios (HRs) for the influence of combined GBM and TBM thickness for predicting end‐stage renal disease (ESRD). Results Patients were assigned to three groups according to the median GBM and TBM thickness: GBM lo TBM lo (GBM < 681 nm and TBM < 1200 nm), GBM hi TBM lo /GBM lo TBM hi (GBM ≥ 681 nm and TBM < 1200 nm, or GBM < 681 nm and TBM ≥ 1200 nm), and GBM hi TBM hi (GBM ≥ 681 nm and TBM ≥ 1200 nm). The GBM hi TBM lo /GBM lo TBM hi and GBM hi TBM hi groups displayed poorer renal function, a more severe glomerular classification and interstitial inflammation, and poorer renal survival rates than the GBM lo TBM lo group The GBM hi TBM lo /GBM lo TBM hi and GBM hi TBM hi groups had adjusted HRs of 1.49 (95% confidence interval [CI], 1.21‐9.75) and 3.07 (95% CI, 2.87‐12.78), respectively, compared with the GBM lo TBM lo group. Conclusions TBM thickness enhanced GBM thickness for renal prognosis in patients with type 2 diabetes.

Zhao, Lijun↗
DOE OSTI2015

Size‐Dependent Crystal Properties of Nanocuprite

Cuprite nanoparticles from 9 nm to 1 μm with narrow size distribution (±7%) are prepared by two different methods. The lattice parameter increases up to 0.2% as the crystallite size decreases to 9 nm from micron size. X‐ray Absorption Near Edge Spectroscope study of our copper oxide nanoparticles shows mostly Cu (I) with increasing concentration of Cu ( II ) as decreasing crystal sizes. The size effect in Cu( II )/Cu(I) ratio indicates that at smaller crystal size, the Cu 2 O tends to be more oxidized at higher charge state with Cu(I)‐O bond. Thus, the lattice expansion can be explained by the presence of longer Cu ( II )‐O bond than Cu (I)‐O bond and/or oxygen interstitials in nanocuprite.

Song, Junhua↗
DOE OSTI2021

Effect of chlorine and chromium on sulfur solubility in low-activity waste glass

According to an empirical sulfur solubility model developed from over 200 simulated low-activity waste (LAW) glasses, chlorine and chromium show strong effects on lowering sulfur solubility in glass. This work was aimed at understanding the mechanism behind the negative effect of chlorine and chromium on sulfur solubility. A simplified LAW glass was prepared and saturated by sodium sulfate, sodium chloride, and sodium chromate salts as single components and as mixtures with different ratios at 25 mol%, 50 mol%, and 75 mol% of sulfate mixed with chloride or chromate. A crucible-scale salt-saturation was performed by mixing the crushed glass powder with an excess amount of salts, melting at 1150 °C for one hour, and quenching. Three mixing-melting-quenching cycles were applied to determine saturation concentrations of sulfur, chromium, and chlorine incorporated into the simplified LAW glass. The glass compositions were analyzed by inductively coupled plasma–atomic emission spectroscopy, ion chromatography, and X-ray emission spectroscopy. It is proposed that the negative effect of chlorine and chromium on sulfur solubility can be explained based on the simple hypothesis that sulfur, chlorine, and chromium are present in the glass as anions competing for the voids or interstitial sites of the glass matrix, and that their solubility strongly depends on the effective size of corresponding anions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Low energy ion-solid interactions and chemistry effects in a series of pyrochlores

The effect of chemistry on low energy recoil events was investigated at 10 K for each type of atom in pyrochlores using molecular dynamics simulation. Contour plots of the threshold displacement energy (Ed) in Gd2Zr2O7 have been produced along more than 80 directions for each individual species. The Ed surface for each type of atom in Gd2Zr2O7 is highly anisotropic; Ed of Zr exhibits the largest degree of anisotropy, while that of O8b exhibits the smallest. The recommended values of Ed in Gd2Zr2O7 based on the observed minima are 56, 94 and 25 eV, respectively for Gd, Zr and O. The influence of cation radius on Ed in pyrochlores A2B2O7 (with A-site ranging from Lu3+ to La3+ and B-site ranging from Ti4+ to Ce4+) was also investigated along three directions [100], [110] and [111]. The Ed in pyrochlores strongly depended on the atom type, atom mass, knock-on direction, and lattice position. The defects produced after low energy displacement events included cation antisite defects, cation Frenkel pairs, anion Frenkel pairs, various vacancies and interstitials. Ce doping in pyrochlores may affect the radiation response, because it resulted in drastic changes in cation and anion displacement energies and formation of an unusual type of anti-site defect. This work demonstrates links between Ed and amorphization resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗