Resolving indexing ambiguities in X-ray free-electron laser diffraction patterns
Abstract not provided
Uervirojnangkoorn, Monarin↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices
GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm -3 to 2e18 cm -3 for the n-GaN growth conditions and 2e16 cm -3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm -3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.
42 ENGINEERING↗
Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.
36 MATERIALS SCIENCE↗
High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation
We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy of >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 10 4 . In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Development of a Bunched Beam Electron Cooler based on ERL and Circulator Ring Technology for the Jefferson Lab Electron-Ion Collider
Jefferson Lab is in the process of designing an electron ion collider with unprecedented luminosity at a 45 GeV center-of-mass energy. This luminosity relies on ion cooling in both the booster and the storage ring of the accelerator complex. The cooling in the booster will use a conventional DC cooler similar to the one at COSY. The high-energy storage ring, operating at a momentum of up to 100 GeV/nucleon, requires novel use of bunched-beam cooling. There are two designs for such a cooler. The first uses a conventional Energy Recovery Linac (ERL) with a magnetized beam while the second uses a circulating ring to enhance both peak and average currents experienced by the ion beam. This presentation will describe the design of both the Circulator Cooling Ring (CCR) design and that of the backup option using the stand-alone ERL operated at lower charge but higher repetition rate than the ERL injector required by the CCR-based design.
Benson, Stephen V.↗
Electron Accelerator Lattice Design for LHeC with Permanent Magnets
We present a new ’green energy’ approach to the Energy Recovery Linac (ERL) the future Electron Ion Collider at LHeC using single beam line made of very strong focusing combined function permanent magnets and the Fixed Field Alternating Linear Gradient (FFA-LG) principle. We are basing our design on recent very successful commissioning results of the Cornell University and Brookhaven National Laboratory ERL Test Accelerator-CBETA.
Trbojevic, D.↗
Electron-Ion Collider Design Status
The Electron-Ion Collider (EIC) is being designed for construction at Brookhaven National Laboratory. Activities have been focused on beam-beam simulations, polarization studies, and beam dynamics, as well as on maturing the layout and lattice design of the constituent accelerators and the interaction region. The latest design advances will be presented.
43 PARTICLE ACCELERATORS↗
Design and Prototyping of the Electron Ion Collider Electron Storage Ring SRF cavity
Among the EIC?s numerous RF subsystems, the electron storage ring?s (ESR) 591 MHz fundamental RF system is one of the most challenging. Each cavity in the system will handle up to 2.5 A of beam current and supply up to 600 kW beam power under a wide range of voltage. The EIC R&D plan includes the design, fabrication and testing of such a cavity. In this paper, we will report the latest status and findings of the ongoing design and prototyping of this cavity, including the RF and mechanical/thermal design, fabrication design, and the progress of fabrication.
Guo, Jiquan↗
Experimentally characterizing the electronic structures of f-electron systems using advanced high resolution Fourier transform microwave spectroscopies
We aim to (i) provide data that directly addresses the fundamental roles of actinide valence electrons in chemical bonding, and (ii) serve to provide prototypical data for the heavy element computational chemistry community. These goals will be achieved through the first pure rotational spectroscopic measurements on prototypical systems at ultra-high resolution. These systems encompass low oxidation state uranium and thorium compounds including, but not limited to, UX and ThX, X = F, Cl, Br, I, and UY and ThY, Y = O, S, and other simple U and Th-containing compounds. Our primary experimental tools involve time-domain rotational spectroscopy achieving line widths and resolutions of a few kHz.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Electronic Coupling Dependence of Ultrafast Interfacial Electron Transfer on Nanocrystalline Thin Films and Single Crystal
The long-term goal of the proposed research is to understand electron transfer dynamics in nanoparticle/liquid interface. This knowledge is essential to many semiconductor nanoparticle based devices, including photocatalytic waste degradation and dye sensitized solar cells.
14 SOLAR ENERGY↗
Guide for 3D WARP simulations of hollow electron beam lenses. Practical explanation on basis of Tevatron electron lens test stand
The purpose of this guide is to help successive students handle WARP. It outlines the installation of WARP on personal computers as well as super-computers and clusters. It furthermore teaches the reader how to handle the WARP environment and run basic scripts. Lastly it outlines how to execute the current Hollow Electron Beam Lens scripts.
97 MATHEMATICS AND COMPUTING↗
Beam dynamics in non-magnetized electron cooler with strong hadron-electron focusing
In this note we develop an approach to description of beam dynamics of electrons experiencing both strong non-linear focusing from the space charge of a hadron beam and the self-field effects.
43 PARTICLE ACCELERATORS↗
Basic radiation effects in electronics. Radiation effects in materials, electrical response in electronic components, and radiation effects units [Slides]
Basic questions for radiation effects in electronics are addressed.
36 MATERIALS SCIENCE↗
Design and Prototyping of the Electron Ion Collider Electron Storage Ring SRF cavity
Among the EIC?s numerous RF subsystems, the electron storage ring?s (ESR) 591 MHz fundamental RF system is one of the most challenging. Each cavity in the system will handle up to 2.5 A of beam current and supply up to 600 kW beam power under a wide range of voltage. The EIC R&D plan includes the design, fabrication and testing of such a cavity. In this paper, we will report the latest status and findings of the ongoing design and prototyping of this cavity, including the RF and mechanical/thermal design, fabrication design, and the progress of fabrication.
Guo, Jiquan↗
Ring Electron Cooler for Electron Ion Collider
Cooling of protons at top energy (γ = 293) to counteract the IBS driven emittance growth can be beneficial to the EIC performance. The Ring Electron Cooler provides such capability.
43 PARTICLE ACCELERATORS↗
On the Electronic Energy of a One-electron Diatomic Molecule near the United Atom
Electric energy behavior for ground state of one-electron heteronuclear diatomic molecule near united atom
DIATOMIC MOLECULE↗