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At least 1,765 records · Page 98

Study of a magnetically driven reconnection platform using ultrafast proton radiography

A novel magnetically driven reconnection platform was created by a pair of U-shaped Cu coils that connect two parallel Cu plates irradiated at a focused laser intensity of ~3 × 10 16 W/cm 2 and characterized using ultrafast proton radiography. The proton data show two prolate voids, each corresponding to the coil current, with an inferred maximum magnitude of 57 ± 4 kA. A center “flasklike” feature was also observed in the proton radiographs. By prescribing electromagnetic fields associated with magnetic reconnection in proton ray tracing simulations, characteristics of this center feature were reproduced. Finally, these results demonstrate the robustness of the laser-driven capacitor coils for generating strong magnetic fields and provide promise of using such coils as a viable platform for studying magnetically driven reconnection in the laboratory.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Net energy gain in direct laser acceleration due to enhanced dephasing induced by an applied magnetic field

Even in the situation where an electron interacts with a single plane wave, the well-known dynamical adiabaticity can be broken when an applied magnetic field is present, which will act to increase the dephasing rate of the electron during the interaction. Here we demonstrate this for the case where there is a uniform static magnetic field which is oriented either parallel or perpendicular to the electric field of the incident plane wave, and perpendicular to the direction of its propagation. The described energy gain phenomenon has direct relevance to laser-plasma interactions that involve external magnetic fields generated by laser-driven capacitor coils.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Investigating the minimum post-burst energy required to function an exploding bridgewire detonator

The minimum energy required after bridge-burst to function a commercially available RP-1 exploding bridgewire detonator with a gold bridgewire was investigated using two capacitor discharge units (CDUs) making use of state-of-the-art on/off high-voltage high-current switches. Both switches are capable of shutting off the current flow in ≈100ns and the conduction time was varied systematically to limit the duration of electrical energy delivered from the CDU until a detonation go/no-go threshold was reached. It was found that the minimal extra electrical energy required for a soft-fire (a statistically marginal go) was approximately half that required for a hard-fire (a definite go). Furthermore, the measured energy required to function the RP-1 detonator from the 11.5 kV CDU was approximately 20 mJ greater than for the 600 V CDU, and it is postulated that this was due to arcing across the detonator terminals and an associated current shunt that was not efficient at depositing energy conducive to detonator functioning. Measurements of the bridgewire temperatures bursting in air showed that the maximum temperature reached was consistent (≈18kK) when sufficient energy was delivered that the detonator functioned (either soft- or hard-fire), but that the temperature for a sub-threshold bridgewire burst was significantly cooler at approximately 8 kK. Furthermore, it was demonstrated that the intensity of the light emitted at burst scaled with deposited energy. A related finding is that the light emission from the bridgewire peaks some tens of nanoseconds after both peak voltage and peak electrical power.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Review of pulsed power-driven high energy density physics research on Z at Sandia

Pulsed power accelerators compress electrical energy in space and time to provide versatile experimental platforms for high energy density and inertial confinement fusion science. The 80-TW “Z” pulsed power facility at Sandia National Laboratories is the largest pulsed power device in the world today. Z discharges up to 22 MJ of energy stored in its capacitor banks into a current pulse that rises in 100 ns and peaks at a current as high as 30 MA in low-inductance cylindrical targets. Considerable progress has been made over the past 15 years in the use of pulsed power as a precision scientific tool. This paper reviews developments at Sandia in inertial confinement fusion, dynamic materials science, x-ray radiation science, and pulsed power engineering, with an emphasis on progress since a previous review of research on Z in Physics of Plasmas in 2005.

Sinars, D. B. (ORCID:0000000155473532)↗

High-speed imaging of transition from fluid breakup to phase explosion in electric explosion of tungsten wires in air

High-speed visible imaging of sub-microsecond electric explosion of wires at the low specific energy deposition threshold reveals three distinct modes of wire failure as capacitor charge voltage and energy deposition are increased. For 100 micron diameter gold-plated tungsten wires of 2 cm length, deposited energies of 1.9 eV/atom produces a liquid column that undergoes hydrodynamic breakup into droplets with radii of order of wire diameter on timescales of 200 μs. Instability growth, column breakup, and droplet coalescence follow classic Rayleigh-Plateau predictions for instability of viscous fluid column. Above 3.2 eV/atom of deposited energy, wires are seen to abruptly transition to an expanding mixture of micron scale liquid-droplets and vapor within one frame (less than 3.33 μs), which has been termed ‘phase explosion’ in literature. Between these two limits, at 2.5 eV/atom of deposited energy, wire radius is unchanged for the first 10 μs before the onset of a rapid expansion and disintegration that resembles homogenous nucleation of mechanically unstable bubbles. Here, thermodynamic calculations are presented that separate cases by temperature obtained during heating: below boiling point, near boiling point, and exceeding boiling point.

42 ENGINEERING↗

In situ TEM measurement of electrical properties of individual BaTiO 3 nanocubes

We report on the measurement of the electrical properties of individual pristine and doped BaTiO 3 nanocubes by using in situ transmission electron microscopy with a two-electrode configuration. The dimensions of the nanocubes tested are between 10 and 20 nm, which rendered their in situ electrical characterization challenging. We characterized 4%Cr and 5%La (atomic percentage) doped BaTiO 3 nanocubes and compared them with the properties of pristine BaTiO3 nanocubes synthesized by the same solvothermal method. We found that the resistance of all three types of nanocubes when displayed in log-scale shows a nearly linear dependence on the applied electric field (R2 ≥ 0.95) over a wide range of electric fields (50–900 kV/cm). Compared with pristine BaTiO 3 nanocubes, the resistance of both 4%Cr and 5%La doped nanocubes showed reduced variation rates with respect to the electric field, with 5%La doping, demonstrating a better reduction in the variation rate. By developing techniques capable of evaluating the properties of individual BaTiO 3 nanocubes, we expect that our work to open the door to the use of BaTiO 3 nanomaterials in the design of future multilayer ceramic capacitors with improved volumetric efficiency and ferroelectrics-enabled nanodevices with advanced functionality.

36 MATERIALS SCIENCE↗

Computing the Paschen curve for argon with speed-limited particle-in-cell simulation

Upon inclusion of collisions, the speed-limited particle-in-cell (SLPIC) simulation method successfully computed the Paschen curve for argon. The 1D3V simulations modeled an electron cascade across an argon-filled capacitor, including electron-neutral ionization, electron-neutral elastic collisions, electron-neutral excitation, and ion-induced secondary electron emission. In electrical breakdown, the timescale difference between ion and electron motion makes traditional PIC methods computationally slow. To decrease this timescale difference and speed up computation, here we used SLPIC, a time-domain algorithm that limits the speed of the fastest electrons in the simulation. The SLPIC algorithm facilitates a straightforward, fully kinetic treatment of dynamics and collisions. SLPIC was as accurate as PIC, but ran up to 200 times faster. SLPIC accurately computed the Paschen curve for argon over three orders of magnitude in pressure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Dynamics and energy coupling of gas puff Z-pinches on a fast linear transformer driver

Gas puff Z-pinch experiments with annular Ar and Ne gas shells have been conducted on the Compact Experimental System for Z-pinch and Ablation Research (CESZAR) linear transformer driver (LTD) with 500 kA current and 160 ns rise time. Here, we present results from the first systematic gas puff Z-pinch experiments using a fast (≤ 200 ns) LTD as a driver, in which we show that 7% of the stored energy in the capacitors is coupled to plasma kinetic energy as estimated via self-emission and laser schlieren images. 0D and 1D simulations—which do not allow instability growth and thus reach greater maximum average velocities—using initial conditions inferred from experimental implosion trajectories predict coupling in excess of 10% of the stored energy. Additionally, the Ar and Ne implosions were comparably massed and thus achieved similar maximum kinetic energies, though the Ne pinches were more stable and the x-ray pulses were longer and produced higher yield: 2–5 ns and 0.21–0.52 J (0.15–0.37 J/cm) of Ar K-shell and 12–25 ns and 2.2–3.9 J (1.6–2.6 J/cm) of Ne K-shell, respectively. The difference in stability is most likely attributed to variations in initial conditions such as density distribution and gas breakdown initiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Expanding the momentum field of view in angle-resolved photoemission systems with hemispherical analyzers

In photoelectron spectroscopy, the measured electron momentum range is intrinsically related to the excitation photon energy. Low photon energies <10 eV are commonly encountered in laser-based photoemission and lead to a momentum range that is smaller than the Brillouin zones of most materials. This can become a limiting factor when studying condensed matter with laser-based photoemission. An additional restriction is introduced by widely used hemispherical analyzers that record only electrons photoemitted in a solid angle set by the aperture size at the analyzer entrance. Here, we present an upgrade to increase the effective solid angle that is measured with a hemispherical analyzer. We achieve this by accelerating the photoelectrons toward the analyzer with an electric field that is generated by a bias voltage on the sample. Our experimental geometry is comparable to a parallel plate capacitor, and therefore, we approximate the electric field to be uniform along the photoelectron trajectory. With this assumption, we developed an analytic, parameter-free model that relates the measured angles to the electron momenta in the solid and verify its validity by comparing with experimental results on the charge density wave material TbTe3. By providing a larger field of view in momentum space, our approach using a bias potential considerably expands the flexibility of laser-based photoemission setups.

36 MATERIALS SCIENCE↗

A portable X-pinch design for x-ray diagnostics of warm dense matter

We describe the design and x-ray emission properties (temporal, spatial, and spectral) of Dry Pinch I, a portable X-pinch driver developed at Imperial College London. Dry Pinch I is a direct capacitor discharge device, 300 × 300 × 700 mm3 in size and ∼50 kg in mass, that can be used as an external driver for x-ray diagnostics in high-energy-density physics experiments. Among key findings, the device is shown to reliably produce 1.1 ± 0.3 ns long x-ray bursts that couple ∼50 mJ of energy into photon energies from 1 to 10 keV. The average shot-to-shot jitter of these bursts is found to be 10 ± 4.6 ns using a combination of x-ray and current diagnostics. The spatial extent of the x-ray hot spot from which the radiation emanates agrees with previously published results for X-pinches—suggesting a spot size of 10 ± 6 µm in the soft energy region (1–10 keV) and 190 ± 100 µm in the hard energy region (>10 keV). These characteristics mean that Dry Pinch I is ideally suited for use as a probe in experiments driven in the laboratory or at external facilities when more conventional sources of probing radiation are not available. At the same time, this is also the first detailed investigation of an X-pinch operating reliably at current rise rates of less than 1 kA/ns.

47 OTHER INSTRUMENTATION↗

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

Enhancement of radiation detection performance with reduction of EH 6/7 deep levels in n-type 4H–SiC through thermal oxidation

We report the effect of EH 6/7 electron trap centers alone on the performance of high-resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky barrier detector (SBD) and a metal-oxide-semiconductor (MOS) capacitor detector fabricated using two sister samples derived from the same 50 μm 4H–SiC parent wafer exhibited widely different energy resolutions of 0.4% and 0.9% for 5486 keV alpha particles. An equivalent noise charge model analysis ruled out the effect of the detector capacitance and the leakage current on the resolution of the detectors. Deep level transient spectroscopic studies revealed the presence of two trapping centers in each detector within the temperature scan range 240–800 K. The Z 1/2 center, a potential electron trap, was detected in both the detectors in equal concentration, which suggested that the observed difference in the energy resolution is due to the presence of the other defect, the EH 6/7 center, in the SBD. The capture cross section of the EH 6/7 center was calculated to be three orders of magnitude higher than the second defect [a carbon antisite vacancy (CAV) center] observed in the MOS detector with an activation energy of 1.10 eV, which accounted for the enhanced electronic trapping in the SBD leading to its poor energy resolution. It has been proposed that the EH 6/7 centers in the SBD have likely been reconfigured to CAV pairs during the thermal growth of the silicon dioxide layer in the MOS detector. The proposed formation mechanism of CAV, a stable qubit state for quantum information processing, addresses the outstanding questions related to the role of defect dynamics in their formation.

61 RADIATION PROTECTION AND DOSIMETRY↗

The ultrafast pixel array camera system and its applications in high energy density physics

Diagnostics in high energy density physics, shock physics, and related fields are primarily driven by a need to record rapidly time-evolving signals in single-shot events. These measurements are often limited by channel count and signal degradation issues on cable links between the detector and digitizer. Here we present the Ultrafast Pixel Array Camera (UPAC), a compact and flexible detector readout system with 32 waveform-recording channels at up to 10 Gsample/s and 1.8 GHz analog bandwidth. The compact footprint allows the UPAC to be directly embedded in the detector environment. A key enabling technology is the PSEC4A chip, an eight-channel switch-capacitor array sampling device with up to 1056 samples/channel. The UPAC system includes a high-density input connector that can plug directly into an application-specific detector board, programmable control, and serial readout, with less than 5 W of power consumption in full operation. We present the UPAC design and characterization, including a measured timing resolution of ~20 ps or better on acquisitions of sub-nanosecond pulses with minimal system calibrations. Example applications of the UPAC are also shown to demonstrate operation of a solid-state streak camera, an ultrafast imaging array, and a neutron time-of-flight spectrometer.

47 OTHER INSTRUMENTATION↗

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Despite its scalability and CMOS process compatibility, the limited endurance and sub-optimal stress response of ferroelectric Zr-substituted hafnia [(Hf,Zr)O 2 ] have been one of the key impediments toward its integration into practical device and technology applications. Here, using electrical measurements complemented by photoluminescence spectroscopy, we investigate the underlying mechanisms behind this behavior in 10 nm thick W/Hf 0.5 Zr 0.5 O 2 /W capacitors. Analyzing the evolution of leakage current with stress cycles and the spectroscopic response of the stress-induced leakage current, we attribute the behavior to defect levels, which lie at 0.6 eV from the conduction band edge of the ferroelectric. Photoluminescence spectroscopy, in turn, further corroborates the defect level's position within the bandgap while enabling its attribution to the presence of oxygen vacancies. Furthermore, this work helps to identify oxygen vacancies as the key factor responsible for the degraded endurance and stress response in (Hf,Zr)O 2 and subsequently motivates the exploration of methods to reduce the oxygen vacancy concentrations without destabilizing the ferroelectric orthorhombic phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has been quantified. In the as-prepared state with a nominal biaxial tensile strain of 0.20% and no applied extrinsic stress, remanent and maximum polarizations of 7.6 and 13.1 μC/cm 2 , respectively, were measured using a 2 MV/cm applied electric field. Reducing the intrinsic strain by 0.111% through the application of a compressive uniaxial stress results in a decrease in the remanent and maximum polarizations to 6.8 and 12.2 μC/cm 2 , respectively. Here, the polarization dependence on strain is nearly linear between these values. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching whereby in-plane tension increases the fraction of the short polar axis orienting out-of-plane, hence increasing out-of-plane polarization. In contrast, reducing the in-plane strain through compression results in an increase in the fraction of the long non-polar axis orienting out-of-plane, thereby decreasing out-of-plane polarization.

36 MATERIALS SCIENCE↗

Implementation of a drive cylinder for low collisional experiments on magnetic reconnection

For most laboratory plasma experiments, Coulomb collisions between the particle species are sufficiently frequent that the particle distribution functions are relaxed to a near-Maxwellian form. This hampers the applicability of such experiments to phenomena observed in tenuous and near-collisionless space plasma. The Terrestrial Reconnection EXperiment (TREX) at the Wisconsin Plasma Physics Laboratory aims to study collisionless reconnection for parameters relevant to the Earth’s magnetosphere. To reduce the role of collisional effects, a reconnection Drive Cylinder has been developed, which increases both the effective system size of the TREX configuration and the rate at which reconnection can be driven. These two effects now permit TREX to reach a kinetic reconnection regime where collisional effects are minimized. The Drive Cylinder is comprised of 12 single loop drive-coils connected in parallel to a 10 kV capacitor bank. Insulated sheets of aluminum are applied to smooth the magnetic fields and enhance the drive efficiency. Following is a description of the technical details and performance of the Drive Cylinder.

Instruments & Instrumentation↗