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At least 1,747 records · Page 97

Atomic Force Microscopy and Infrared Nanospectroscopy of COVID-19 Spike Protein for the Quantification of Adhesion to Common Surfaces

The COVID-19 pandemic has claimed millions of lives worldwide, sickened many more, and has resulted in severe socio-economic consequences. As society returns to normal, understanding the spread and persistence of SARS CoV-2 on commonplace surfaces can help to mitigate future outbreaks of coronaviruses and other pathogens. We hypothesize that such an understanding can be aided from studying the binding and interaction of viral proteins with non-biological surfaces. Here, we propose a methodology for investigating the adhesion of the SARS CoV-2 spike glycoprotein on common inorganic surfaces such as aluminum-, copper-, iron-, silica-, and ceria-oxides as well as metallic gold. Quantitative adhesion was obtained from the analysis of measured forces at the nanoscale using an atomic force microscope operated under ambient conditions. Without imposing further constraints on the measurement conditions, our preliminary findings suggest that spike glycoproteins interact with similar adhesion forces across the majority of the metal oxides tested with the exception to gold, for which attraction forces ~10 times stronger than all other materials studied were observed. Ferritin, which was used as a reference protein, was found to exhibit similar adhesion forces as SARS CoV-2 spike protein. Further, this study results show that glycoprotein adhesion forces for similar ambient humidity, tip shape, and contact surface are non-specific to the properties of metal oxide surfaces, which are expected to be covered by a thin water film. The findings suggest that at ambient conditions glycoprotein adhesion to metal oxides is primarily controlled by the water capillary forces and they depend on the surface tension of the liquid (water). We discuss further strategies warranted to decipher the intricate nanoscale forces for improved quantification of the adhesion.

59 BASIC BIOLOGICAL SCIENCES↗

A Scalable Method for Thickness and Lateral Engineering of 2D Materials

The physical properties of two-dimensional (2D) materials depend strongly on the number of layers. Hence, methods for controlling their thickness with atomic layer precision are highly desirable, yet still too rare, and demonstrated for only a limited number of 2D materials. Here we present a simple and scalable method for the continuous layer-by-layer thinning that works for a large class of 2D materials, notably layered germanium pnictides and chalcogenides. It is based on a simple oxidation/etching process, which selectively occurs on the topmost layers. Through a combination of atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and X-ray diffraction experiments we demonstrate the thinning method on germanium arsenide (GeAs), germanium sulfide (GeS) and germanium disulfide (GeS 2 ). We use first-principles simulation to provide insights into the oxidation mechanism. Our strategy, which could be applied to other classes of 2D materials upon proper choice of the oxidation/etching reagent, could pave the way for the realization of 2D material-based devices, such as electronic or optoelectronic ones, where a precise control over the number of layers (hence over the material’s physical properties) is needed. We also show that when used in combination with lithography, our method can be used to make precise patterns in the 2D materials.

2D materials↗

Observation of strontium segregation in LaAlO{sub 3}/SrTiO{sub 3} and NdGaO{sub 3}/SrTiO{sub 3} oxide heterostructures by X-ray photoemission spectroscopy

LaAlO{sub 3} and NdGaO{sub 3} thin films of different thicknesses have been grown by pulsed laser deposition on TiO{sub 2}-terminated SrTiO{sub 3} single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy hν and emission angle Θ. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.

36 MATERIALS SCIENCE↗

Spectroscopic properties of (PVA+ZnO):Mn{sup 2+} polymer films

Electron Paramagnetic Resonance (EPR), optical absorption and infrared spectral studies have been carried out on Mn{sup 2+} ions doped in poly(vinyl alcohol) complexed with zinc oxide polymer films prepared by solution cast technique. The EPR spectra of 1 mol% Mn{sup 2+} ions doped polymer complex (PVA+ZnO) at room temperature exhibit sextet hyperfine structure (hfs), centered at 2.01. The spin-Hamiltonian parameter values indicate that the ground state of Mn{sup 2+} ion in d{sup 5} and the site symmetry around Mn{sup 2+} ions in tetragonally distorted octa hedral site. The optical absorption spectra exhibits two bands centered at 275nm at 437nm. The FTIR spectrum exhibits bands characteristic of stretching and banding vibrations of O-H, C-H and C=C groups.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A 25 micron-thin microscope for imaging upconverting nanoparticles with NIR-I and NIR-II illumination

Rationale: Intraoperative visualization in small surgical cavities and hard-to-access areas are essential requirements for modern, minimally invasive surgeries and demand significant miniaturization. However, current optical imagers require multiple hard-to-miniaturize components including lenses, filters and optical fibers. These components restrict both the form-factor and maneuverability of these imagers, and imagers largely remain stand-alone devices with centimeter-scale dimensions. Methods: We have engineered INSITE (Immunotargeted Nanoparticle Single-Chip Imaging Technology), which integrates the unique optical properties of lanthanide-based alloyed upconverting nanoparticles (aUCNPs) with the time-resolved imaging of a 25-micron thin CMOS-based (complementary metal oxide semiconductor) imager. We have synthesized core/shell aUCNPs of different compositions and imaged their visible emission with INSITE under either NIR-I and NIR-II photoexcitation. We characterized aUCNP imaging with INSITE across both varying aUCNP composition and 980 nm and 1550 nm excitation wavelengths. To demonstrate clinical experimental validity, we also conducted an intratumoral injection into LNCaP prostate tumors in a male nude mouse that was subsequently excised and imaged with INSITE. Results: Under the low illumination fluences compatible with live animal imaging, we measure aUCNP radiative lifetimes of 600 μs - 1.3 ms, which provides strong signal for time-resolved INSITE imaging. Core/shell NaEr 0.6 Yb 0.4 F 4 aUCNPs show the highest INSITE signal when illuminated at either 980 nm or 1550 nm, with signal from NIR-I excitation about an order of magnitude brighter than from NIR-II excitation. The 55 μm spatial resolution achievable with this approach is demonstrated through imaging of aUCNPs in PDMS (polydimethylsiloxane) micro-wells, showing resolution of micrometer-scale targets with single-pixel precision. INSITE imaging of intratumoral NaEr 0.8 Yb 0.2 F 4 aUCNPs shows a signal-to-background ratio of 9, limited only by photodiode dark current and electronic noise. Conclusion: This work demonstrates INSITE imaging of aUCNPs in tumors, achieving an imaging platform that is thinned to just a 25 μm-thin, planar form-factor, with both NIR-I and NIR-II excitation. Based on a highly paralleled array structure INSITE is scalable, enabling direct coupling with a wide array of surgical and robotic tools for seamless integration with tissue actuation, resection or ablation.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Reconfigurable metamaterial absorber as an optical switch based on organic-graphene control

In this paper, we have suggested an effective optical switch with the cross fractal shape. It contains the main cross element that connected to four parasitic elements by four organic’s material junctions. This absorber is modified as a tunable element by using the graphene layer which can be considered for compensating the physical distortion. Each organic and parasitic load is placed over a graphene layer. These graphene layers separated with a SiO{sub 2} thin film. We have implemented a SiO{sub 2} layer as a spacer between the graphene and metal ground layer. The organic materials are popular for their various resistances value. We have applied a bulky dielectric slab with two different conductivity values for high and low resistance (HRS and LRS). This absorber works at the range of 90–100 THz for mid-infrared spectrum and the bandwidth of 4%. In the HRS mode the reflection value is about − 35 up to − 25 dB. When the organic material switched to LRS mode, this value drastically increased to − 5 dB. The designed absorber has both the tunable and switchable attributes. We have simulated this switch by the finite integral technique method with CST microwave studio.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Experimental investigation of the effect of indium content on the CuIn{sub 5}S{sub 8} electrodes using electrochemical impedance spectroscopy

This paper reports on the use of electrochemical impedance spectroscopy to investigate the electrochemical behavior of spinel CuIn{sub 5}S{sub 8}/electrolyte interface. The CuIn{sub 5}S{sub 8} spinel films have been potentiostatically deposited onto indium tin oxide (ITO)-coated glass substrate. CuCl{sub 2} and InCl{sub 3} mixed solutions with different [Cu]/[In] ratios were used as cation precursor and Na{sub 2}S{sub 2}O{sub 3} as the anion precursor in acidic solution and at room temperature. The effect of the [Cu]/[In] ratio in the precursor solution on the structural, chemical stoichiometry, and morphological properties of prepared samples, as well as the electrochemical behavior of the CuIn{sub 5}S{sub 8}/electrolyte interface was investigated. The electrochemical impedance spectroscopy data have been modeled using an equivalent circuit approach. Several parameters such as, flat-band potential and free carrier concentration were determined by the change in the Mott–Schottky plots.

36 MATERIALS SCIENCE↗

Density determination of nano-layers depending to the thickness by non-destructive method

Non-destructive tests used to characterize and observe the state of the solids near the surface or at depth, without damaging them or damaging them. Density is frequently used to follow the variations of the physical structure of the samples, as well as in the calculation of quantity of material required to fill a given volume, and it is also used to determine the homogeneity of a sample. However, the measurement of the acoustic properties (density, elastic constants,…) of a thin film whose thickness is smaller than several atomic layers is not easy to perform. For that reason, we expose in this work the effects of the thicknesses of thin films on the evolution of the density, where several samples are analyzed. The samples selected structures are thin films deposited on substrates, these coatings have thicknesses varying from a few atomic layers to ten or so micrometers and can change the properties of the substrate on which they are deposited. To do so, we considered a great number of layers (Cr, Al, SiO{sub 2}, ZnO, Cu, AlN, Si{sub 3}N{sub 4}, SiC) deposited on different substrates (Al{sub 2}O{sub 3}, Cu and Quartz). It is first shown that the density exhibits a dispersive behaviour. Such a behaviour is characterized by an initial increase (or decrease) followed by a saturated region. Further investigations of these dependences led to the determination of a semi-empirical universal relations, ρ=f(h/λ{sub T}), for all the investigated layer/substrate combination. Such expression could be of great importance in the density prediction of even layers thicknesses.

36 MATERIALS SCIENCE↗

Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates

Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.

36 MATERIALS SCIENCE↗

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

36 MATERIALS SCIENCE↗

ZnO/CdS bi-layer nanostructures photoelectrode for dye-sensitized solar cells

Simple chemical deposition method for the synthesis of ZnO/CdS bilayer photoelectrode on fluorine doped tin oxide (FTO) coated glass substrate in aqueous medium at low temperature (< 373K) is described. The different preparative parameters such as deposition time, bath temperature, concentration of precursor solution and, pH of the bath etc. were optimized. Nanograined ZnO was deposited on FTO coated glass substrates by dip-coating method, whereas CdS nanorods were successfully synthesized on pre-deposited ZnO film by Chemical Bath Deposition (CBD) method. The Photovoltaic properties of FTO/ZnO/CdS bilayer photo electrodes were also studied. A maximum short circuit current density of 9.1 mA cm-2 and conversion efficiency 1.05% are observed for ZnO/CdS-10min. Layer, which supports fast electron injection kinetics due to hetero structured nanorod, while minimum values of 0.53mA cm-2 and 0.01% respectively are observed for only ZnO deposited layer.

36 MATERIALS SCIENCE↗

A hybrid nanoantenna for highly enhanced directional spontaneous emission

Spontaneous emission modulated by a hybrid plasmonic nanoantenna has been investigated by employing finite-difference time-domain method. The hybrid nanoantenna configurations constituted by a gap hot-spot and of a plasmonic corrugated grating and a metal reflector sandwiching a SiO{sub 2} thin layer which appears promising for high spontaneous emission enhancement devices. Simulation assays show that the coupling between the gap-antenna and plasmonic corrugations reaches an ultra-high near-field enhancement factor in the excitation process. Moreover, concerning the emission process, the corrugations concentrate the far-field radiated power within a tiny angular volume, offering unprecedented collection efficiency. In the past decades, many kinds of optical antennas have been proposed and optimized to enhance single molecule detection. However, the excitation enhancement effect for single individual or dimmer plasmonic nanostructure is limited due to intrinsic nonradiative decay of the nanoparticle plasmon and quantum tunneling effect. The proposed hybrid configuration overwhelms the enhancement limit of single individual plasmonic structure. The findings provide an insight into spontaneous emission high enhancement through integrating the functions of different metallic nanostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Spin texture on top of flux avalanches in Nb/Al 2 O 3 /Co thin film heterostructures

We report on magneto-optical imaging, magnetization, Hall effect, and magneto-resistance experiments in Nb/Al 2 O 3 /Co thin film heterostructures. The magneto-transport measurements were performed in samples where electrical contacts were placed on the Co layer. The magnetic field is applied perpendicularly to the plane of the film and gives rise to abrupt flux penetration of dendritic form. A magnetization texture is imprinted in the Co layer in perfect coincidence with these ramifications. The spin domains that mimic the vortex dendrites are stable upon the field removal. Moreover, the imprinted spin structure remains visible up to room temperature. In the region of the field-temperature diagram where flux instabilities are known to occur in bare Nb films, irregular jumps are observed in the magnetic hysteresis and large amplitude noise is detected in the magneto-resistance and Hall resistivity data when measured as a function of the field.

36 MATERIALS SCIENCE↗

Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate

Highlights: • NBTZr deposited on ITO/glass under O{sub 2} exhibits a phase-pure perovskite structure. • NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm{sup 2}. • At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58. • At 100 kHz, the ϵ{sub r} and tanδ are 205 and 0.092, respectively. - Abstract: Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O{sub 2} atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (P{sub r}) of 11.5 μC/cm{sup 2} and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.

36 MATERIALS SCIENCE↗

Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering

Zinc-oxide films 1.4 μm in thickness are deposited onto glassy substrates by the dual magnetron-assisted sputtering of zinc targets in an argon and oxygen gas atmosphere. The dependences of the structural and optical characteristics of the ZnO films on the temperature of postdeposition photonic annealing are studied. It is established that an increase in the annealing temperature yields an increase in the degree of crystallinity of the films. Electron microscopy shows that the deposited ZnO coatings are columnar in structure and the microstructure density and crystallite size increase upon annealing. It is found that, at an annealing temperature of 450–650°C, the optical transmittance increases to >90% in the spectral range 400–1100 nm. The experimental results show that the temperature of vacuum photonic annealing has the most profound effect on the final properties of ZnO coatings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra of nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.

42 ENGINEERING↗

On twin density and resistivity of nanometric Cu thin films

Crystal orientation mapping in the transmission electron microscope was used to quantify the twin boundary length fraction per unit area for five Ta{sub 38}Si{sub 14}N{sub 48}/SiO{sub 2} encapsulated Cu films with thicknesses in the range of 26–111 nm. The length fraction was found to be higher for a given twin-excluded grain size for these films compared with previously investigated SiO{sub 2} and Ta/SiO{sub 2} encapsulated films. The quantification of the twin length fraction per unit area allowed the contribution of the twin boundaries to the size effect resistivity to be assessed. It is shown that the increased resistivity of the Ta{sub 38}Si{sub 14}N{sub 48} encapsulated Cu films compared with the SiO{sub 2} and Ta/SiO{sub 2} encapsulated films is not a result of increased surface scattering, but it is a result of the increase in the density of twin boundaries. With twin boundaries included in the determination of grain size as a mean-intercept length, the resistivity data are well described by 2-parameter Matthiessen's rule summation of the Fuchs-Sondheimer and Mayadas Shatzkes models, with p and R parameters that are within experimental error equal to those in prior reports and are p = 0.48(+0.33/−0.31) and R = 0.27 ± 0.03.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ru nucleation and thin film smoothness improvement with ammonia during chemical vapor deposition

This study reports the use of ammonia to inhibit the growth of previously nucleated ruthenium islands and force the nucleation of additional islands such that thinner films form as the islands coalesce with continued growth. Ruthenium films are grown at 448 K in a chemical vapor deposition process on SiO{sub 2}/Si(001) using triruthenium dodecacarbonyl, Ru{sub 3}(CO){sub 12}, with and without a constant partial pressure of ammonia. Film growth was performed at a Ru{sub 3}(CO){sub 12}/Ar pressure of 47.2 mTorr. The ammonia partial pressure varied from 0 to 27.8 mTorr. X-ray photoelectron spectroscopy was used to analyze the samples in situ. Ex situ characterization included scanning electron microscopy, atomic force microscopy, and x-ray diffraction and x-ray reflectivity. Nucleation studies limited to the first 10 min of growth revealed the maximum nanoparticle (island) density of 8.1 × 10{sup 11 }cm{sup −2} occurred at an intermediate ammonia pressure (5.25 mTorr) compared to a density of 3.1 × 10{sup 11 }cm{sup −2} for no ammonia addition. Extending film growth to 120 min and varying the ammonia partial pressure during the first 10 min followed by 5.25 mTorr ammonia pressure for the final 110 min reveals the importance of nucleation on film smoothness. A model describing the inhibition effects of ammonia during nucleation and growth is presented.

36 MATERIALS SCIENCE↗