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At least 1,747 records · Page 97

Synthesis and characterization of polyaniline as emeraldine salt

Polyaniline in emeraldine salt (PANI-ES) form was successfully synthesized by oxidative polymerization of aniline using ammonium peroxidisulphate as oxidant in the presence of hydrochloric acid as catalyst under ice bath condition. The as prepared powdered sample was characterized using X-Ray Diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Using XRD, the average crystalline size was found to be 5.63 nm and d-spacing corresponding to crystalline peak 2θ = 25.08° had come out to be 4.2 Å. Also FTIR absorption spectra showed all the characteristics bands of PANI –ES. The ohmic contact between the PANI-ES film and the substrate was confirmed by Current-Voltage (I-V) characterization.

36 MATERIALS SCIENCE↗

Organic doping of rotated double layer graphene

Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity \ mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Study of some health physics parameters of bismuth-ground granulated blast furnace slag shielding concretes

The Bismuth-ground granulated blastfurnace slang (Bi-GGBFS) concrete samples were prepared. The weight percentage of different elements present in Bi-GGBFS Shielding concretewas evaluated by Energy Dispersive X-ray Microanalysis (EDX). The exposure rate and absorbed dose rate characteristics were calculated theoretically for radioactive sources namely {sup 241}Am and {sup 137}Cs. Our calculations reveal that the Bi-GGBFS concretes are effective in shielding material for gamma radiations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of defect formation from process step anomalies in limited boron source diffusion in crystalline silicon

In limited dopant source diffusion process, the deposition and the drive in conditions of the source play an important role in pn- junction formation. The pre diffusion anomalies can introduce defects in the emitter region during the process of diffusion which can glide into the bulk region. So, the defects formed in the emitter region due to different pre diffusion issues are studied in this work with boron spin on dopant source diffused in n-type crystalline Si. The samples are prepared for different diffusion conditions of times carried out at diffusion temperature of 900°C. Different characterization techniques used in this work confirms the presence of these defects in the emitter region. The dopant distribution under the same diffusion condition result in non- uniformity, varying the junction depth of the emitter. A single process step anomaly is sufficient enough to degrade the emitter performance and should be avoided.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic properties of lithium zinc ferrites synthesized by microwave sintered method

In this paper, a series of polycrystalline ferrite samples were prepared with the composition of Zn{sub 0.1}Li{sub 0.525-x}Ti{sub 0.15}Mg{sub x}Fe{sub 2.225-0.5x}O{sub 4} (LiZn) (x=0, 0.05, 0.10, 0.15 and 0.20) using both microwave sintering (MS) and conventional sintering (CS) technologies, respectively. The sintering time and temperature were 22 hours and 1000°C for the CS process, and 2 hours and 880°C for the MS process. Experiments showed that the MS treated LiZn ferrites exhibited more excellent magnetic properties and denser, more uniform micro-structures comparing with the ones treated by CS method. For the LiZn ferrite (x=0.1) sintered at 880°C using MS, the saturation magnetic induction (Bs) is 242.3 mT, the coercive force (Hc) is 135 A/m, the square ratio (Br/Bs) is 0.87 and the ferromagnetic resonance line-width (Δ H) is 143.2 Oe. These results represented very good properties for an X-band phase shifter material and indicated that the MS method is a potentially important technique for fabricating low temperature co-fired ceramics (LTCC).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optimization of BaZrO{sub 3} concentration as secondary phase in superconducting YBa{sub 2}Cu{sub 3}O{sub 7} for high current applications

We report the superconducting state properties of YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on introduction of BaZrO{sub 3} (BZO) as a secondary phase. YBCO+xBZO (x= 0, 2, 4, 6, and 10 wt%) composite samples were prepared by solid state reaction method and characterized for structural, morphological and superconducting properties. X-ray diffraction confirms the increased crystallinity and images of scanning electron microscopy measurement show an increase in both grain size and grain connectivity on addition of BZO in YBCO. These effects are well pronounced in an applied magnetic field. Critical current density, J{sub C}, as well as the pinning force peaks at 4% of BZO concentration showed significant difference. A three-fold enhancement in J{sub C} and a six-fold enhancement in pinning force were observed at this optimum BZO concentration. This has been attributed to the pinning of flux lines in YBCO due to introduction of BZO as a secondary phase. These results show that this composite has potential application in high current applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Alternative uses of a megavolt tandem accelerator for few-keV studies with ion-source SIMS monitoring

We increase the versatility of a tandem electrostatic accelerator by implementing simple modifications to the standard operation procedure. While keeping its ability to deliver MeV ion beams, we show that the experimental setup can (i) provide good quality ion beams in the few-keV energy range and (ii) be used to study ion-beam surface modification with simultaneous secondary ion mass spectrometry. This latter task is accomplished without using any chamber connected to the accelerator exit. We perform mass spectrometry of the few-keV anions produced in the ion source by measuring their neutral counterparts at the accelerator exit with energies up to 1.7 MeV. With an additional modification, a high-current few-keV regime is obtained, using the ion source as an irradiation chamber and the accelerator itself only as a mass spectrometer. As an example of application, we prepare a sample for the study of ion-beam assisted dewetting of a thin Au film on a Si substrate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Etching of Cr tips for scanning tunneling microscopy of cleavable oxides

Here, we report a detailed three-step roadmap for the fabrication and characterization of bulk Cr tips for spin-polarized scanning tunneling microscopy. Our strategy uniquely circumvents the need for ultra-high vacuum preparation of clean surfaces or films. First, we demonstrate the role of ex situ electrochemical etch parameters on Cr tip apex geometry, using scanning electron micrographs of over 70 etched tips. Second, we describe the suitability of the in situ cleaved surface of the layered antiferromagnet La 1.4 Sr 1.6 Mn 2 O 7 to evaluate the spin characteristics of the Cr tip, replacing the ultra-high vacuum-prepared test samples that have been used in prior studies. Third, we outline a statistical algorithm that can effectively delineate closely spaced or irregular cleaved step edges, to maximize the accuracy of step height and spin-polarization measurements.

36 MATERIALS SCIENCE↗

Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum to create randomly oriented grains with an average size of 13 nm. Two static diffraction rings are simultaneously observed on a gated pixel array detector. Their centroids move following lower-intensity laser excitation, and utilizing an in-situ angular calibration, the transient lattice spacing is determined with femtometer accuracy, thereby allowing the measurement of charge carrier dynamics. Compared to bulk calculations, we find that carrier diffusion slows by more than one order of magnitude. This result provides evidence for the formation of potential energy barriers at the grain boundaries and demonstrates the capability of time-resolved x-ray scattering to probe nanoscale charge transport in materials other than near-perfect crystals.

36 MATERIALS SCIENCE↗

A cleanroom in a glovebox

The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system that allows for the fabrication and characterization of devices in an inert argon atmosphere. Additionally, we demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Finally, we discuss the custom-built antechamber attached to the back of the glovebox. This antechamber allows the glovebox to interface with ultra-high vacuum equipment such as molecular-beam epitaxy and scanning tunneling microscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evidence of gas phase nucleation of nanodiamond in microwave plasma assisted chemical vapor deposition

The mechanism of ballas-like nanodiamond formation still remains elusive, and this work attempts to analyze its formation in the framework of activation energy (Ea) of nanodiamond films grown from a H2/CH4 plasma in a 2.45 GHz chemical vapor deposition system. The Ea was calculated from the Arrhenius equation corresponding to the thickness growth rate using substrate temperature (∼1000−1300 K) in all the calculations. While the calculated values matched with the Ea for nanodiamond formation throughout the literature, these values of ∼10 kcal/mol were lower compared to ∼15–25 kcal/mol for standard single crystal diamond (SCD) formation, concluding thus far that the energetics and processes involved were different. Further, the substrate preparation and sample collection method were modified while keeping the growth parameters constant. Unseeded Si substrate was physically separated from the plasma discharge by a molybdenum disk with a pinhole drilled in it. Small quantity of a sample substance was collected on the substrate. The sample was characterized by electron microscopy and Raman spectroscopy, confirming it to be nanodiamond, thus suggesting that nanodiamond self-nucleated in the plasma and flowed to the substrate that acted as a mere collection plate. It is hypothesized then, if nanodiamond nucleates in gas phase, gas temperature has to be used in the Arrhenius analysis. The Ea values for all the nanodiamond films were re-calculated using the simulated gas temperature (∼1500−2000 K) obtained from a simple H2/CH4 plasma model, giving new values within the range characteristic to SCD formation. Based on these findings, a unified growth mechanism for nanodiamond and SCD is proposed, concluding that the rate-limiting reactions for nanodiamond and SCD formation are the same.

Materials Science↗

Scattering of a laser beam on a wet blood smear and measurement of red cell size distribution

We report an automated laser system that allows the red cell size distribution to be measured. Experiments are performed on laser light scattering by a suspension of oriented red blood cells (a wet blood smear). Based on an analysis of the angular distribution of light intensity in the diffraction pattern, we have restored the red cell size distribution. The average diameter of a red blood cell is determined with an error of less than 1%, and the spread of red blood cells in size – with an error of about 20%. We discuss the problems of photometry and processing of diffraction patterns, preparing blood samples and data processing algorithms, including methods for solving the inverse scattering problem. (laser biophotonics)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Molecular-Resolution Electron Imaging of Defects and Dynamics at the Ice-Water Interface

Water crystallization into hexagonal ice (type I h ) is one of the most critical processes relevant to the Earth’s environment and human activities. However, despite recent breakthroughs in imaging non-equilibrium condensed ice structures, the ice-water interface has never been imaged at a molecular resolution. This is primarily due to the low stability of the hydrogen bonds in ice under high-resolution microscopy conditions and a lack of methods to prepare compatible samples. Here, this presentation describes the first molecular-resolution imaging of ice crystallized from liquid water and the ice-water interface using high-resolution transmission electron microscopy (HRTEM). By encapsulating deionized (DI) water between two amorphous carbon (a-C) TEM grids and subsequently freezing it with liquid N 2 on a cryo sample stage, we generated two types of ice: non-equilibrium, condensed ice from the atmosphere and encapsulated ice from the DI water (Fig. 1A). Condensed ice usually shows irregular, spherulitic shapes (Fig. 1B). Selected area electron diffraction (SAED) shows that they are a mixture of cubic and hexagonal crystals (Fig. 1C). On the contrary, encapsulated ice forms thin films that contain large-area single-crystalline regions of hexagonal ice oriented along the [0001] zone axis (Fig. 1D). Differential electron energy-loss spectroscopy (EELS) confirmed the high purity of the encapsulated ice free from organic contaminations that are common in other encapsulation methods for HRTEM such as graphene liquid cells. These single-crystalline areas are robust under the electron beam up to ~100 e/Å 2 s. Aberration-corrected HRTEM imaging in these areas achieved a line resolution of ~1.3 Å (Fig. 1E and F). This platform allows us to study near-equilibrium ice structures and dynamics at an unprecedented spatial resolution (Fig. 2). For example, we discovered subdomain-rich regions near the defective crystal edges despite the structure appearing single-crystalline according to diffraction criteria. These subdomains connect via low-angle grain boundaries with flat energy landscapes as a function of tilt angles (according to simulations), showing the high tolerance of ice to defect structures. When we tuned the sample temperature and electron flux rate, we observed radiolysis-controlled bubble generation and dissolution in ice single crystals near a steady state of bubble dynamics. Furthermore, rich beam-induced melting and recrystallization dynamics were observed at the ice-water interface with lattice resolution. These data represent the first observation of the ice-water phase transformation at the sub-nanometer level. In summary, the methods developed in this work enabled molecular-resolution observations of ice and the ice-water interface and shed light on the microstructures and phase transformation pathways. Finer control on the temperature, electron irradiation profile, and imaging detector could eventually lead to real-time observation of ice nucleation in water and address long-standing questions in the nucleation pathways.

74 ATOMIC AND MOLECULAR PHYSICS↗

Engineering diamond interfaces free of dark spins

Nitrogen-vacancy (NV) centers in diamond are utilized extensively as quantum sensors for imaging fields at the nanoscale. The ultrahigh sensitivity of NV magnetometers has enabled the detection and spectroscopy of individual electron spins, with potentially far-reaching applications in condensed matter physics, spintronics, and molecular biology. However, the surfaces of these diamond sensors naturally contain electron spins, which create a background signal that can be hard to differentiate from the signal of the target spins. In this study, we develop a surface modification approach that eliminates the unwanted signal of these so-called dark electron spins. Our surface passivation technique, based on coating diamond surfaces with a thin titanium oxide (Ti⁢O 2 ) layer, reduces the dark spin density. The observed reduction in dark spin density aligns with our findings on the electronic structure of the diamond-Ti⁢O 2 interface. The reduction, from a typical value of 2000 μm −2 to a value below that set by the detection limit of our NV sensors (200 μm −2 ), results in a twofold increase in Hahn-echo coherence time of near surface NV centers. Furthermore, we derive a comprehensive spin model that connects dark spin relaxation with NV coherence, providing additional insights into the mechanisms behind the observed spin dynamics. Our findings are directly transferable to other quantum platforms, including nanoscale solid-state qubits and superconducting qubits.

74 ATOMIC AND MOLECULAR PHYSICS↗

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd 2 Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. Here, we use the transfer length method to show our Pd 2 Si contacts have very high yield (99.7% +0.2% –1.5%) and low resistivity (272 ± 41 Ω μm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% –3.2%).

2-dimensional systems↗

Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction

The possibility of tuning the Dzyaloshinskii-Moriya interaction (DMI) by electric (E)-field gating in ultrathin magnetic materials has opened up new perspectives in terms of controlling the stabilization of chiral spin structures. The most recent efforts have used voltage-induced charge redistribution at the interface between a metal and an oxide to modulate the DMI. This approach is attractive for active devices but tends to be volatile, making it energy-demanding, and it is limited by Coulomb screening in the metal. Here we demonstrate nonvolatile E-field manipulation of the DMI by ionic-liquid gating of Pt/Co/Hf ⁢O 2 ultrathin films. The E-field effect on the DMI scales with the E-field exposure time, and we propose that it is linked to the migration of oxygen species from the Hf⁢ O 2 layer into the Co and Pt layers and subsequent anchoring. Here, this effect permanently changes the properties of the material, showing that E fields can be used not only for local gating in devices but also as a highly scalable materials design tool for postgrowth tuning of the DMI.

Domain walls↗