Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “oxide interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,747 records · Page 97

Crystalline ZrTiO{sub 4} gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

ZrTiO{sub 4} crystallized in orthorhombic (o-) phase was stacked with an amorphous Yb{sub 2}O{sub 3} interfacial layer as the gate dielectric for Si-based p-MOSFETs. With thermal annealing after gate electrode, the gate stack with equivalent oxide thickness (EOT) of 0.82 nm achieves high dielectric quality by showing a low interface trap density (D{sub it}) of 2.75 × 10{sup 11 }cm{sup −2}eV{sup −1} near the midgap and low oxide traps. Crystallization of ZrTiO{sub 4} and post metal annealing are also proven to introduce very limited amount of metal induced gap states or interfacial dipole. The p-MOSFETs exhibit good sub-threshold swing of 75 mV/dec which is ascribed to the low D{sub it} value and small EOT. Owing to the Y{sub 2}O{sub 3} interfacial layer and smooth interface with Si substrate that, respectively, suppress phonon and surface roughness scattering, the p-MOSFETs also display high hole mobility of 49 cm{sup 2}/V-s at 1 MV/cm. In addition, I{sub on}/I{sub off} ratio larger than 10{sup 6} is also observed. From the reliability evaluation by negative bias temperature instability test, after stressing with an electric field of −10 MV/cm at 85 °C for 1000 s, satisfactory threshold voltage shift of 12 mV and sub-threshold swing degradation of 3% were obtained. With these promising characteristics, the Yb{sub 2}O{sub 3}/o-ZrTiO{sub 4} gate stack holds the great potential for next-generation electronics.

36 MATERIALS SCIENCE↗

Oxidation Resistance and Critical Sulfur Content of Single-Crystal Superalloys

The high-temperature components of a jet turbine engine are made from nickel-base superalloys. These components must be able to withstand high stresses, fatigue, and corrosive reactions with high-temperature gases. Such oxidation resistance is associated with slow-growing Al2O3 scales that remain adherent to superalloy components after many thermal cycles. Historically, good oxidation resistance has been obtained by coating these components with Ni-Cr-Al-Y coatings, where small additions of yttrium (Y) were necessary for scale adhesion. Subsequently, it was found that the Y aids scale adhesion by preventing sulfur from segregating to the scale metal interface and thus preventing the sulfur from weakening the oxide-metal bonds. Y is a difficult element to incorporate in single-crystal superalloy castings, but it was shown in early work at the NASA Lewis Research Center that good adhesion could be obtained for low-sulfur, uncoated, singlecrystal superalloys, without Y additions. Low sulfur contents for these uncoated superalloys were achieved in the laboratory by a high-temperature hydrogen annealing process. This process allows segregation and surface cleaning of sulfur monolayers in a reducing environment. Another approach is to remove sulfur from the alloy in the melting process. The present study was designed to establish a guideline for the minimum level of desulfurization needed to achieve maximum performance. Coupons of various thicknesses of the superalloy PWA 1480 were hydrogen annealed at various times (8 to 100 hr) and temperatures (1000 to 1300 C), resulting in coupons with sulfur contents ranging from about 0.05 to 5 ppm. Cyclic oxidation tests at 1100 C were then used to assess adhesion and spalling. The weight change of one set of 20-mil (0.5-mm) samples, annealed for 20 hr at 1000, 1100, 1200, and 1300 C, is shown in the following figure. Clearly, the effect of the annealing temperature is quite dramatic in that the higher temperatures produced scales that spalled very little, whereas the lower temperatures resulted in severe weight losses comparable to those for the as-received, unannealed sample.

Smialek, James L.↗

Atomic Dynamics of Multi‐Interfacial Migration and Transformations

Redox-induced interconversions of metal oxidation states typically result in multiple phase boundaries that separate chemically and structurally distinct oxides and suboxides. Directly probing such multi-interfacial reactions is challenging because of the difficulty in simultaneously resolving the multiple reaction fronts at the atomic scale. Using the example of CuO reduction in H 2 gas, a reaction pathway of CuO → monoclinic m-Cu 4 O 3 → Cu 2 O is demonstrated and identifies interfacial reaction fronts at the atomic scale, where the Cu 2 O/m-Cu 4 O 3 interface shows a diffuse-type interfacial transformation; while the lateral flow of interfacial ledges appears to control the m-Cu 4 O 3 /CuO transformation. Together with atomistic modeling, it is shown that such a multi-interface transformation results from the surface-reaction-induced formation of oxygen vacancies that diffuse into deeper atomic layers, thereby resulting in the formation of the lower oxides of Cu 2 O and m-Cu 4 O 3 , and activate the interfacial transformations. In conclusion, these results demonstrate the lively dynamics at the reaction fronts of the multiple interfaces and have substantial implications for controlling the microstructure and interphase boundaries by coupling the interplay between the surface reaction dynamics and the resulting mass transport and phase evolution in the subsurface and bulk.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Lowering the density of electronic defects on organic-functionalized Si(100) surfaces

The electrical quality of functionalized, oxide-free silicon surfaces is critical for chemical sensing, photovoltaics, and molecular electronics applications. In contrast to Si/SiO{sub 2} interfaces, the density of interface states (D{sub it}) cannot be reduced by high temperature annealing because organic layers decompose above 300 °C. While a reasonable D{sub it} is achieved on functionalized atomically flat Si(111) surfaces, it has been challenging to develop successful chemical treatments for the technologically relevant Si(100) surfaces. We demonstrate here that recent advances in the chemical preparation of quasi-atomically-flat, H-terminated Si(100) surfaces lead to a marked suppression of electronic states of functionalized surfaces. Using a non-invasive conductance-voltage method to study functionalized Si(100) surfaces with varying roughness, a D{sub it} as low as 2.5 × 10{sup 11} cm{sup −2}eV{sup −1} is obtained for the quasi-atomically-flat surfaces, in contrast to >7 × 10{sup 11} cm{sup −2}eV{sup −1} on atomically rough Si(100) surfaces. The interfacial quality of the organic/quasi-atomically-flat Si(100) interface is very close to that obtained on organic/atomically flat Si(111) surfaces, opening the door to applications previously thought to be restricted to Si(111)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

36 MATERIALS SCIENCE↗

AC impedance analysis of polypyrrole thin films

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

Penner, Reginald M.↗

Specific Features of the Structure and the Dielectric Properties of Sodium–Bismuth Titanate-Based Ceramics

The phase formation, specific features, and the dielectric properties of the ceramics of compositions from the region of morphotropic interface in the (Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}–BaTiO{sub 3} system modified by Bi(Mg{sub 0.5}Ti{sub 0.5})O{sub 3} and also low-melting additions KCl, NaCl–LiF, CuO, and MnO{sub 2} that favor the control of the stoichiometry and the properties of the ceramics have been studied. The ceramics are characterized by ferroelectric phase transitions that are observed as jumps at temperatures near 400 K and maxima at T{sub m} ~ 600 K in the temperature dependences of the dielectric permittivity. The phase transitions at ~400 K demonstrate the relaxor behavior indicating the existence of polar domains in the nonpolar matrix. An increase in the content of Bi(Mg{sub 0.5}Ti{sub 0.5})O{sub 3} favor a decrease in the electrical conductivity and dielectric losses of the samples, and the relative dielectric permittivity at room temperature ε{sub rt} is retained quite high, achieving the highest values ε{sub rt} = 1080–1350 in the ceramics modified with KCl.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

36 MATERIALS SCIENCE↗

Reverse degradation of nickel graphene junction by hydrogen annealing

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 {sup 0}C) is an effective technique to reverse the degradation.

36 MATERIALS SCIENCE↗

Charge transport-accumulation in multilayer structures with Si{sub 3}N{sub 4} and thick(5.5 nm) SiO{sub 2}

Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si{sub 3}N{sub 4} is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10{sup −14} cm{sup 2}. With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO{sub 2}/Si{sub 3}N{sub 4} interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001))

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Triiodide Attacks the Organic Cation in Hybrid Lead Halide Perovskites: Mechanism and Suppression

Molecular I 2 can be produced from iodide-based lead perovskites under thermal stress; triiodide, I 3 − , is formed from this I 2 and I − . Triiodide attacks protic cation MA + - or FA + -based lead halide perovskites (MA + , methylammonium; FA + , formamidinium) as explicated through solution-based nuclear magnetic resonance (NMR) studies: triiodide has strong hydrogen-bonding affinity for MA + or FA + , which leads to their deprotonation and perovskite decomposition. Triiodide is a catalyst for this decomposition that can be obviated through perovskite surface treatment with thiol reducing agents. In contrast to methods using thiol incorporation into perovskite precursor solutions, no penetration of the thiol into the bulk perovskite is observed, yet its surface application stabilizes the perovskite against triiodide-mediated thermal stress. Thiol applied to the interface between FAPbI 3 and Spiro-OMeTAD (“Spiro”) prevents oxidized iodine species penetration into Spiro and thus preserves its hole-transport efficacy. Surface-applied thiol affects the perovskite work function; it ameliorates hole injection into the Spiro overlayer, thus improving device performance. It helps to increase interfacial adhesion (“wetting”): fewer voids are observed at the Spiro/perovskite interface if thiols are applied. Perovskite solar cells (PSCs) incorporating interfacial thiol treatment maintain over 80% of their initial power conversion efficiency (PCE) after 300 h of 85 °C thermal stress.

36 MATERIALS SCIENCE↗

Photoelectrochemical properties of MOF-induced surface-modified TiO 2 photoelectrode

Heteroatom doping and surface modification with oxides are both important strategies to improve the photoelectrochemical (PEC) activities of TiO 2 photoelectrodes. However, it is difficult to combine the two strategies into a single synthesis process. Herein, a simple one-pot synthesis method was developed to modify a TiO 2 photoelectrode surface by N-doping while simultaneously modifying the surface with In 2 O 3 and NiO. This method involved growing MOF onto a TiO 2 surface with N-containing organic ligands and In and Ni salts as metal precursors, followed by heat treatment at 600 °C. The roles of heteroatom doping and oxide modification are proposed as follows. (i) N-Doping extends the absorption edge of the TiO 2 to a longer wavelength region and enhances visible light absorption. (ii) N-Doping together with the passivation of TiO 2 surface trap states by oxide modification increases the donor density in TiO 2 . (iii) The generated suitable interfaces on the surface of TiO 2 facilitate photogenerated charge separation and transfer. In comparison with the pristine TiO 2 photoelectrode, the metal oxide- and heteroatom-modified TiO 2 photoelectrode exhibits superior photoelectrochemical performance under both simulated sunlight and visible light illumination. Suitable substrate of the electrode, appropriate size of the as-synthesized MOF precursors, and choice of ligands and metal ions are important factors for this strategy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ultrathin, epitaxial cerium dioxide on silicon

It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

36 MATERIALS SCIENCE↗

Development of Ceramic Matrix Composites For High Temperature Applications

The microstructure and mechanical properties of carbon fiber reinforced silicon carbide (C/SiC) composites that incorporated molecular-level oxidation inhibitors designed to increase the material s high temperature durability were characterized. The viability of a fiber-level inhibitor incorporated as part of a layered interface system as well as a molecularly-integrated matrix-level oxidation inhibitor that is co-deposited with the SiC matrix during Chemical Vapor Infiltration (CVI) was determined. It was expected that the inhibitor would act as a glass former that will getter the oxygen and form a crack sealant to reduce further ingress of oxygen into the composite. Three composites were examined. Composite A was a baseline C(sub f)/SiC(sub m) composite that incorporated a approx. 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, and a CVI-derived SiC matrix. Composite B was a C(sub f)/SiC(sub m) composite incorporating a approx 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, a approx. 0.6 micron B4C fiber-level oxidation barrier coating, and a CVI-derived SiC matrix. Composite C was a C(sub f) /SiC(sub m) composite that incorporated a approx. 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, a approx. 0.6 micron B4C fiber-level oxidation barrier coating, and a BxC-SiC oxidation-inhibited matrix produced by CVI co-deposition. All composites were reinforced with 10 plies of T-300 balanced plain weave carbon fabric with 3K tows at 12.5 ends per inch.

Heimann, Paula↗

Unifying principles for catalytic hydrotreating processes (Final Technical Report)

This project builds on the hypothesis that the hydrotreating processes for the removal of oxygen and sulfur are fundamentally similar at the atomic-scale and existing knowledge from the treatment of petroleum derived feedstock can be leveraged for the design of novel catalysts for the upgrade of bio-oil. We tested this hypothesis by comparing computed potential energy diagrams for hydrodesulfurization (HDS) of thiophene over MoS 2 with hydrodeoxygenation (HDO) of furan over MoO 3 and concluded that certain aspects, such as catalyst promotion with transition metals, are valid strategies for both reactions. On the other hand, we also noticed significant differences in the mechanism for hydrogen (H 2 ) activation, which requires sites with metallic character. While MoS 2 is known to have metallic edge states that can catalyze H 2 dissociation, this elementary step is prohibitively slow on defect-free oxides. Only in the presence of vacancies or by creating metal/oxide interfaces can efficient H 2 activation sites during HDO be formed. The need for bifunctional catalyst when it comes to efficient and selective HDO or dehydrogenation reactions was further corroborated in joint experimental and theoretical studies of the Guerbet reaction for the coupling of biomass derived oxygenates over PdCu alloys, nitrate reduction over In-promoted Pd nanoparticles, and ethylene dehydroaromatization over Ga-exchanged ZSM-5 zeolites. All of these catalytic systems have in common that catalytic sites with distinct functional requirements are needed to create a working catalyst. Detailed computational studies were carried out for HDO of m -cresol and phenol on Ru-modified TiO 2 surfaces, which allowed us to attribute catalytic activity to the metal/oxide interface. A surprising finding was that heterolytic cleavage of the H-H bond across the Ru/TiO 2 interface was critically important, despite lower barriers for homolytic H 2 activation on Ru metal. The explanation lies in the high barriers for hydrogen spillover from Ru to TiO 2 , which becomes unnecessary in the heterolytic activation pathway. Moreover, we also reported that proton transfer steps between metal and oxide sites are mediated by weakly adsorbed surface water. During attempts to develop and validate a kinetic Monte Carlo (kMC) model for HDO reactions at the Ru/TiO 2 interface, it became clear that lateral interactions are paramount to describe realistic surface chemistry and without these interactions, the reduction and hydroxylation behavior from our simulations was inconsistent with reported experiments. To assess the importance of lateral interactions in popular computational catalyst design strategies relying on the identification of reactivity descriptors, which can be used along with Brønsted–Evans–Polanyi (BEP) and scaling relations as input to a microkinetic model (MKM) to make predictions for activity or selectivity trends, we compared predicted trends with those obtained from descriptor-based kMC models. We critically evaluated the benefits of kMC over MKM in terms of trend predictions and computational cost when using only a small set of input parameters. After confirming that in the absence of lateral interactions the kMC and MKM approaches yield identical trends and mechanistic information, we observed substantial differences between the two kinetic models when lateral interactions were introduced. The mean-field implementation applies coverage corrections directly to the descriptors, causing an artificial overprediction of the activity of strongly binding metals. In contrast, the cluster expansion in kMC implementation can differentiate among the highly active metals but it is very sensitive to the set of included interaction parameters. Considering that computational screening relies on a minimal set of descriptors, for which MKM makes reasonable trend predictions at a ca. three orders of magnitude lower computational cost than kMC, we concluded that the MKM approach does provide an overall better entry point for computational catalyst design. Overall, this project has led to 11 peer-reviewed publications, and their scientific is impact is well illustrated by their combined 702 citations.

08 HYDROGEN↗

Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells

Molybdenum oxide (MoO{sub 3}) is considered as a possible primary back contact for Cu(InGa)Se{sub 2} thin film solar cells for its potential as a transparent back contact for superstrate and bifacial devices. MoO{sub 3} films were deposited on Mo or ITO-coated soda lime glass substrates by reactive rf sputtering in an ambient of Ar + O{sub 2} with O{sub 2}/(O{sub 2} + Ar) = 35% on which Cu(In{sub 0.7}Ga{sub 0.3})Se{sub 2} alloy absorber layers were deposited using multi-source elemental evaporation. Scanning Electron Microscopy studies showed uniform coverage of the as-deposited MoO{sub 3} layer and good adhesion was obtained in all cases. X-ray Photoelectron Spectroscopy depth profile analysis showed that MoSe{sub 2} was not formed at the Cu(InGa)Se{sub 2} interface with either the Mo-MoO{sub 3} or ITO-MoO{sub 3} back contacts. Determination of the valence band offsets showed that the MoO{sub 3} layer at the interface changes the energy band alignment with Cu(InGa)Se{sub 2}, producing a primary contact with lower valence band offset than ITO. Cu(In,Ga)Se{sub 2} thin film solar cells prepared using an as-deposited Mo-MoO{sub 3} back contact yielded a best conversion efficiency of 14%, with V{sub OC} = 647 mV, J{sub SC} = 28.4 mA/cm{sup 2}, and FF = 78.1%. Cells with ITO-MoO{sub 3} back contact showed a best efficiency of 12%, with V{sub OC} = 642 mV, J{sub SC} = 26.8 mA/cm{sup 2}, and FF = 69.2%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electric field effects on spin accumulation in Nb-doped SrTiO{sub 3} using tunable spin injection contacts at room temperature

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO{sub 3}. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO{sub 3} which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Operating Stresses and Their Effects on Degradation of LSM-Based SOFC Cathodes

The performance of solid oxides fuel cells (SOFCs) with four different Mn excess of lanthanum strontium manganite (LSM) -based cathodes were examined under different temperatures (1,000 °C, 900 °C), current densities (0, 380, and 760 mA cm -2 ), and cathode atmospheres (p O 2 )=0.1,0.15,0.21) for durations ranging from 58 to 1,008 h. Each yttria-stabilized zirconia (YSZ) electrolyte-supported “button” cell had a porous Ni/YSZ composite anode and a porous LSM/YSZ composite cathode. The cells’ output voltage versus time were recorded and electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV) measurements were performed every 24 hours. The total area specific resistance (ASR) was calculated from these measurements. The values of ASR from both EIS and LSV were comparable between each other but lower than that from durability test. Distribution of relaxation times (DRT) analysis was performed to investigate the electrochemical processes and their corresponding relaxation frequencies as well as their attributions to the total ASR. The series resistance and parallel resistance that obtained from the equivalent circuit fit of the Nyquist plot were higher at low temperature and low p O 2 regardless of LSM compositions. The area of the peaks derived from DRT analysis increased with time during individual tests. The microstructures of the tested cells were examined using scanning electron microscopy and energy-dispersive x-ray spectroscopy (SEM/EDS). Manganese oxide particles were observed near the cathode-electrolyte interface after prolonged (1,008 h) testing in air of a cell with LSM of 11% manganese excess, and after a short test (58 h) under low oxygen (p O 2 = 0.10) in a cell with LSM of 5% manganese excess. However, the role of MnOx in cell degradation is still unknown.

08 HYDROGEN↗