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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Electrical modulation of superconducting critical temperature in liquid-gated thin niobium films

We demonstrate that the superconducting critical temperature (T{sub c}) of thin niobium films can be electrically modulated in a liquid-gated geometry device. T{sub c} can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below T{sub c}, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phase modulation mode of scanning ion conductance microscopy

This Letter reports a phase modulation (PM) mode of scanning ion conductance microscopy. In this mode, an AC current is directly generated by an AC voltage between the electrodes. The portion of the AC current in phase with the AC voltage, which is the current through the resistance path, is modulated by the tip-sample distance. It can be used as the input of feedback control to drive the scanner in Z direction. The PM mode, taking the advantages of both DC mode and traditional AC mode, is less prone to electronic noise and DC drift but maintains high scanning speed. The effectiveness of the PM mode has been proven by experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Alkali vapor pressure modulation on the 100 ms scale in a single-cell vacuum system for cold atom experiments

We describe and characterize a device for alkali vapor pressure modulation on the 100 ms timescale in a single-cell cold atom experiment. Its mechanism is based on optimized heat conduction between a current-modulated alkali dispenser and a heat sink at room temperature. We have studied both the short-term behavior during individual pulses and the long-term pressure evolution in the cell. The device combines fast trap loading and relatively long trap lifetime, enabling high repetition rates in a very simple setup. These features make it particularly suitable for portable atomic sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

In operando observation system for electrochemical reaction by soft X-ray absorption spectroscopy with potential modulation method

In order to investigate local structures of electrolytes in electrochemical reactions under the same scan rate as a typical value 100 mV/s in cyclic voltammetry (CV), we have developed an in operando observation system for electrochemical reactions by soft X-ray absorption spectroscopy (XAS) with a potential modulation method. XAS spectra of electrolytes are measured by using a transmission-type liquid flow cell with built-in electrodes. The electrode potential is swept with a scan rate of 100 mV/s at a fixed photon energy, and soft X-ray absorption coefficients at different potentials are measured at the same time. By repeating the potential modulation at each fixed photon energy, it is possible to measure XAS of electrochemical reaction at the same scan rate as in CV. We have demonstrated successful measurement of the Fe L-edge XAS spectra of aqueous iron sulfate solutions and of the change in valence of Fe ions at different potentials in the Fe redox reaction. The mechanism of these Fe redox processes is discussed by correlating the XAS results with those at different scan rates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 nm, the Al/amorphous-Ge/n-Ge shows ohmic characteristics. Electron hopping through localized states of a-Ge layer, the alleviation of metal induced gap states, as well as the termination of dangling bonds at the amorphous-Ge/n-Ge interface are proposed to explain the anomalous modulation of Schottky barrier height.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Ultra-fast solid state electro-optical modulator based on liquid crystal polymer and liquid crystal composites

A different generation of polymer-dispersed liquid crystals (PDLCs) based on a liquid crystalline polymer host is reported wherein the fluid behavior of the reactive mesogenic monomer is an enabler to concentration windows (liquid crystal polymer/liquid crystal) (and subsequent morphologies) not previously explored. These liquid crystal (LC) polymer/LC composites, LCPDLCs, exhibit excellent optical and electro-optical properties with negligible scattering losses in both the ON and OFF states. These systems thus have application in systems where fast phase modulation of optical signal instead of amplitude control is needed. Polarized optical microscopy and high resolution scanning electron microscopy confirm a bicontinuous morphology composed of aligned LC polymer coexisting with a phase separated LC fluid. Operating voltages, switching times, and spectra of LCPDLCs compare favourably to conventional PDLC films. The LCPDLCs exhibit a low switching voltage (4–5 V/μm), symmetric and submillisecond (200 μs) on/off response times, and high transmission in both the as formed and switched state in a phase modulation geometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modification of modulated plasma plumes for the quasi-phase-matching of high-order harmonics in different spectral ranges

We demonstrate the technique allowing the fine tuning of the distance between the laser-produced plasma plumes on the surfaces of different materials, as well as the variation of the sizes of these plumes. The modification of plasma formations is based on the tilting of the multi-slit mask placed between the heating laser beam and target surface, as well as the positioning of this mask in the telescope placed on the path of heating radiation. The modulated plasma plumes with the sizes of single plume ranging between 0.1 and 1 mm were produced on the manganese and silver targets. Modification of the geometrical parameters of plasma plumes proved to be useful for the fine tuning of the quasi-phase-matched high-order harmonics generated in such structures during propagation of the ultrashort laser pulses. We show the enhancement of some groups of harmonics along the plateau range and the tuning of maximally enhanced harmonic by variable modulation of the plasma.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Modulated ferromagnetic ordering and the magnetocaloric response of Eu{sub 4}PdMg

Neutron powder diffraction confirms that the primary ordering mode in Eu{sub 4}PdMg is ferromagnetic with a europium moment of 6.5(2) μ{sub B}. {sup 151}Eu Mössbauer spectroscopy shows that the unusual linear temperature dependence of the magnetisation reported for this system is an intrinsic property and not an artefact of the applied field. The form and temperature evolution of the {sup 151}Eu Mössbauer spectra strongly suggest that there is an incommensurate modulation to the magnetic structure that modifies the basic ferromagnetic order. This modulated structure may be the origin of the broad magnetocaloric response previously observed in Eu{sub 4}PdMg.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Voltage modulation of propagating spin waves in Fe

The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ground-state modulation-enhancement by two-state lasing in quantum-dot laser devices

We predict a significant increase of the 3 dB-cutoff-frequency on the ground-state lasing wavelength for two-state-lasing quantum-dot lasers using a microscopically motivated multi-level rate-equation model. After the onset of the second lasing line, the excited state acts as a high-pass filter, improving the ground-state response to faster modulation frequencies. We present both numerically simulated small-signal and large-signal modulation results and compare the performance of single and two-state lasing devices. Furthermore, we give dynamical arguments for the advantages of two-state lasing on data-transmission capabilities.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Effect of dynamical non-neutrality on the modulational instability of laser propagating through hot magnetoplasma

In this work, modulational instability of a laser pulse in a hot magnetized plasma is investigated. Nonlinear relativistic equation, describing the amplitude evolution of a laser with finite longitudinal and transversal structure, is obtained. Taking into account the plasma dynamical non-neutrality caused by the ponderomotive force, the growth rate of the modulational instability is derived. Effect of the pulse length on the instability growth rate is investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Instability of nonplanar modulated dust acoustic wave packets in a strongly coupled nonthermal dusty plasma

Cylindrical and spherical amplitude modulations of dust acoustic (DA) solitary wave envelopes in a strongly coupled dusty plasma containing nonthermal distributed ions are studied. Employing a reductive perturbation technique, a modified nonlinear Schrödinger equation including the geometrical effect is derived. The influences of nonthermal ions, polarization force, and the geometries on the modulational instability conditions are analyzed and the possible rogue wave structures are discussed in detail. It is found that the spherical DA waves are more structurally stable to perturbations than the cylindrical ones. Possible applications of these theoretical findings are briefly discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance of the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Surface plasmon polariton excitation by electrostatic modulation and phase grating in indium-tin-oxide coated lithium niobate slabs

Excitation of surface plasmon polaritons (SPPs) in a non-metal system in visible regime is discussed. With the assistance of phase grating resulted from photorefractive effect and electrostatic modulation of ITO induced by strong photovoltaic effect in iron-doped LiNbO{sub 3}, phase matching condition could be satisfied for SPP excitation in this semiconductor/dielectric system. Both the phase grating instead of metal grating and electrostatic modulation of semiconductor could be used for the design of tunable plasmonic devices based on nonlinear photorefractive crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Work function contrast and energy band modulation between amorphous and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} films

The work function (WF) is of crucial importance to dominate the carrier transport properties of the Ge-Sb-Te based interfaces. In this letter, the electrostatic force microscopy is proposed to extract the WF of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films with high spatial and energy resolution. The measured WF of as-deposited amorphous GST is 5.34 eV and decreases drastically after the amorphous GST is crystallized by annealing or laser illumination. A 512 × 512 array 2D-WF map is designed to study the WF spatial distribution and shows a good consistency. The WF contrast between a-GST and c-GST is ascribed to band modulation, especially the modification of electron affinity including the contribution of charges or dipoles. Then, the band alignments of GST/n-Si heterostructures are obtained based on the Anderson's rule. Due to the band modulation, the I-V characteristics of a-GST/Si heterojunction and c-GST/Si heterojunction are very different from each other. The quantitative relationship is calculated by solving the Poisson's equation, which agrees well with the I-V measurements. Our findings not only suggest a way to further understand the electrical transport properties of Ge-Sb-Te based interfaces but also provide a non-touch method to distinguish crystalline area from amorphous matrix with high spatial resolution.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration

The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗