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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Laser optical appraisal and design of a PRIME/Rover interface

An appraisal of whether to improve the existing multi-laser/multi detector system was undertaken. Two features of the elevation scanning mast which prevent the system from meeting desired specifications were studied. Then elevation scanning mast has 20 detectors, as opposed to the desired 40. This influences the system's overall resolution. The mirror shaft encoder's finite resolution prevents the laser from being aimed exactly as desired. This influences the system's overall accuracy. It was concluded that the existing system needs no modification at present. The design and construction of a data emulator which allowed testing data transactions with a PRIME computer is described, and theory of operation briefly discussed. A full blown PRIME/Rover Interface was designed and built. The capabilities of this Interface and its operating principles are discussed.

Donaldson, J. A.↗
NASA NTRS1980

Bubble departure radii at solidification interfaces

A model has been developed for the prediction of bubble departure radii from flat solidification interfaces, including the effect of thermocapillary forces. Under normal gravity conditions, the necessary gas bubble radius required for departure from a CBr4 solidification interface is predicted to be approximately 1/2 mm in agreement with measured values. Under microgravity conditions, however, where surface forces predominate, the model predicts a seemingly prohibitive value of 40 mm. This result is at least in agreement with the microgravity tests conducted on the NASA SPAR I and SPAR III sounding rockets (1978) where the bubbles were not larger than 2 mm in radius and no bubble detachment was observed.

Cole, R.↗
NASA NTRS1980

Chemical depth profiles of the GaAs/native oxide interface

The final-state oxidation products and their distribution in thin native oxides (30-40 A) on GaAs have been studied using X-ray photoelectron spectroscopy in conjunction with chemical depth profiling. Extended room-temperature-oxidation conditions have been chosen to allow the native oxide to attain its equilibrium composition and structure. The work emphasizes the use of chemical depth-profiling methods which make it possible to examine the variation in chemical reactivity of the oxide structure. A minimum of two distinct regions of Ga2O3 with differing chemical reactivity is observed. Chemical shift data indicate the presence of As2O3 in the oxide together with an elemental As overlayer at the interface. A change in relative charge transfer between oxygen and both arsenic and gallium-oxide species is observed in the region of the interface.

Grunthaner, P. J.↗
NASA NTRS1982

Graphics-System Color-Code Interface

Circuit originally developed for a flight simulator interfaces a computer graphics system with color monitor. Subsystem is intended for particular display computer (AGT-130, ADAGE Graphics Terminal) and specific color monitor (beam penetration tube--Penetron). Store-and-transmit channel is one of five in graphics/color-monitor interface. Adding 5-bit color code to existing graphics programs requires minimal programing effort.

Tulppo, J. S.↗
NASA NTRS1980

Material and process constraints for a flat interface in the Bridgman-Stockbarger technique

The functional relationships between various material and process parameters necessary for a flat interface in the Bridgman-Stockbarger technique are given. In particular, two boundary condition cases are considered. The findings imply that the material and process parameters cannot be arbitrary if a flat melt-solid interface is to be achieved. The sensitivity of one parameter to changes in another parameter suggests great care should be taken in obtaining the various material parameters.

Foster, L. M.↗
NASA NTRS1980

FFT methods in signal processing of the coal interface detector radar

The FM radar for the coal interface detector, operating in the frequency band 2 to 4 GHz, is intended for the display of thicknesses between 2 cm and 20 cm. Because of such a short range, the thickness information is contained in the very few lowest spectral components of the output signal. To overcome this inconvenience, the Fourier series of the output signal was augmented to approximate a Fourier integral. This modification in the signal processing resulted in a higher spectral density, which in turn enabled an easier identification of the interface position in the laboratory. The orientation and spacing of the receiving and transmitting antennas is found to have an important influence on the system performance.

Kajfez, D.↗
NASA NTRS1979

Aerospace Ground Equipment for model 4080 sequence programmer. A standard computer terminal is adapted to provide convenient operator to device interface

The Aerospace Ground Equipment (AGE) provides an interface between a human operator and a complete spaceborne sequence timing device with a memory storage program. The AGE provides a means for composing, editing, syntax checking, and storing timing device programs. The AGE is implemented with a standard Hewlett-Packard 2649A terminal system and a minimum of special hardware. The terminal's dual tape interface is used to store timing device programs and to read in special AGE operating system software. To compose a new program for the timing device the keyboard is used to fill in a form displayed on the screen.

Nissley, L. E.↗
NASA NTRS1981

Study program for encapsulation materials interface for low-cost solar array

The service integrity of the bonded interface in solar cell modules used in solar arrays is addressed. The development of AC impedance as a nondestructive evaluation (NDE) methodology for solar arrays is reported along with development of corrosion models and materials selection criteria for corrosion resistant interfaces.

Kaelble, D. H.↗
NASA NTRS1981

Laser velocimeter (autocovariance) buffer interface

A laser velocimeter (autocovariance) buffer interface (LVABI) was developed to serve as the interface between three laser velocimeter high speed burst counters and a minicomputer. A functional description is presented of the instrument and its unique features which allow the studies of flow velocity vector analysis, turbulence power spectra, and conditional sampling of other phenomena. Typical applications of the laser velocimeter using the LVABI are presented to illustrate its various capabilities.

Clemmons, J. I., Jr.↗
NASA NTRS1981

IGDS/TRAP Interface Program (ITIP). Software User Manual (SUM)

This specification establishes the requirements, concepts, and preliminary design for a set of software known as the IGDS/TRAP Interface Program (ITIP). This software provides the capability to develop at an Interactive Graphics Design System (IGDS) design station process flow diagrams for use by the NASA Coal Gasification Task Team. In addition, ITIP will use the Data Management and Retrieval System (DMRS) to maintain a data base from which a properly formatted input file to the Time-Line and Resources Analysis Program (TRAP) can be extracted. This set of software will reside on the PDP-11/70 and will become the primary interface between the Coal Gasification Task Team and IGDS, DMRS, and TRAP. The user manual for the computer program is presented.

Jefferys, S.↗
NASA NTRS1981

IGDS/TRAP Interface Program (ITIP). Software Design Document

The preliminary design of the IGDS/TRAP Interface Program (ITIP) is described. The ITIP is implemented on the PDP 11/70 and interfaces directly with the Interactive Graphics Design System and the Data Management and Retrieval System. The program provides an efficient method for developing a network flow diagram. Performance requirements, operational rquirements, and design requirements are discussed along with sources and types of input and destination and types of output. Information processing functions and data base requirements are also covered.

Jefferys, Steve↗
NASA NTRS1980

XPS studies of structure-induced radiation effects at the Si/SiO2 interface

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Grunthaner, F. J.↗
NASA NTRS1981

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗
NASA NTRS1981

GaAs-oxide interface states - A gigantic photoionization effect and its implications to the origin of these states

Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.

Lagowski, J.↗
NASA NTRS1982

XPS Study of Oxide/GaAs and SiO2/Si Interfaces

Concepts developed in study of SiO2/Si interface applied to analysis of native oxide/GaAs interface. High-resolution X-ray photoelectron spectroscopy (XPS) has been combined with precise chemical-profiling technique and resolution-enhancement methods to study stoichiometry of transitional layer. Results are presented in report now available.

Grunthaner, F. J.↗
NASA NTRS1981

Man/machine interface development for the REMOTEX concept

The development of a man/machine interface system that can be used to remotely control a system composed of a transporter base and a force-reflecting, survocontrolled manipulator is reported. The concept features the incorporation of totally remote operation. A simulator is build to optimize man/machine interface requirements.

Garin, J.↗
NASA NTRS1982

Interface control and mechanical property improvements in silicon carbide/titanium composites

Several composite systems made of titanium matrix reinforced with silicon carbide fiber were investigated to obtain a better understanding of composite-degradation mechanisms and to develop techniques to minimize loss of mechanical properties during fabrication and in service. Emphasis was on interface control by fiber or matrix coatings. X-ray diffraction studies on planar samples showed that the formation of titanium silicides was greatly inhibited by the presence of aluminum or Ti3A1 layers at the fiber-matrix interface, with the Ti3A1 being more effective in reducing the reactions. Fiber studies showed that coating the fiber with a 1-micron-thick layer of aluminum improved the as-fabricated strength of a stoichiometric SiC fiber and reduced the fiber degradation during exposure to composite-fabrication conditions. Applying an interfacial barrier by coating the matrix foils instead of the fibers was found to be an effective method for improving composite strength. Reducing the fabrication temperature also resulted in significant improvements in composite strengths. Good-quality, well-consolidated composites were fabricated at temperatures well below those currently used for SiC-Ti composite fabrication.

Brewer, W. D.↗