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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Simulation analysis of graphene contacted perovskite solar cells using SCAPS-1D

To understand what cause the low performance in a perovskite cell with graphene back contact, we have performed simulations of device characteristics using SCAPs-1D simulation platform. The impact of increasing defect concentration at the interface of perovskite/graphene (RGO) and also graphene thickness on the current density, voltage, fill factor, and conversion efficiency of the cell was investigated. We converted the graphene nanostructure to a planar p-type layer at the top side of the cell as a hole transporting layer in order to enable to insert it into the SCAPS simulation platform. The simulation analysis were compared to the experimental data reported in literature. The voltage and fill factor of the simulation and experiments are almost the same but the current density is showing to be higher in simulation analysis which reminds a imperfect thickness and absorption by the graphene layer. Graphene was also compared to Spiro-MeOTAD showing to be a promising materials to act as both hole transporting layer and back contact. The experimental process could be improved by looking at our results as a method to fabricate a high performance cell with graphene electrode. It is shown that such a hybrid structure suffers from imperfect interface at graphene and perovskite junction where a high concentration of trap density impedes the carrier collection.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Surviving nanoscale interfacial stability in extreme thermal expansion contrast Zn(CN) 2 -epoxy resin matrix composites

Here, we report the remarkable stability at the nanoscale matrix-filler interface in a series of overall low coefficient of thermal expansion (CTE) zinc cyanide (ZC)/epoxy resin composites. These interfaces demonstrate the stability of highly contrasting materials. These composites are designed to optimize the properties of both materials: epoxy resins are valued for their high strength, superb chemical resistance, low dielectric properties, and adhesive abilities. ZC, a model flexible framework, exhibits negative thermal expansion (NTE) behavior and compensates for the epoxy resin’s detrimentally large thermal expansion values. Filled resins minimize the native 65 ppm/°C CTE values to 19 ppm/° C over a wide temperature range while maintaining linearity, yielding composites compatible with typical metal and ceramic substrates’—commonly bonded to the resin— 0–20 ppm/° C CTE values. Additionally, with significant intrinsic differences in the materials, we use wide-angle X-ray diffraction and atomic force microscopy to elucidate thermal movement. The ZC/epoxy interface is surprisingly resilient over 1,000 cycles between -55° C and 75° C, extremes typical to aerospace applications. Further, we show that the resin viscosity remains less than 21 Pa*s at up to 30 vol% ZC, an important consideration for workability. We also discuss settling distribution, glass transition temperature, flexural strength, and longevity. All results point favorably towards practical implementation in low thermal expansion application needs: filling the gap in component design.

42 ENGINEERING↗
DOE OSTI2021

Quantifying the chemical, electrochemical heterogeneity and spatial distribution of (poly) sulfide species using Operando SANS

In-situ and operando measurements are done to gain a better understanding of the precipitation mechanisms during charge and discharge in lithium sulfur batteries. A carbon felt networked with microfibers consisting of pores, 2 nm and smaller, is used as a freestanding sulfur host. Three different methods of sulfur infiltration are explored in order to determine the best one to fill most of the pores. It was identified to be a melt infiltration method in a vacuum oven, where the pores including the ultra-micropores, are successfully filled. In-situ electrochemical impedance spectroscopy measurements show a solid product formation occurring at the sulfur cathode, both during the high voltage plateau and at the end of discharge. In a 3-electrode EIS measurement, a similar solid product formation on the Li counter electrode due to its reaction with polysulfides is also observed. Operando small angle neutron scattering measurements show the solid product formation, in the carbon, both near the beginning and at the end of discharge, confirming the precipitation data via contrast changes as a function of charge and discharge. It is shown that Li 2 S precipitates in the pores at the beginning and the end of discharge, whereas S8 precipitates on the surface of the carbon felt. Finally, this lithium sulfur system shows both the quasi-solid-state and the solid-liquid-solid reactions in a typical ethereal electrolyte solution with a two-plateau discharge profile.

25 ENERGY STORAGE↗
DOE OSTI2026

Quantification of [MTBD][beti] loading and its effects on Pt/HSC electrode performance in hydrogen fuel cells

High surface area carbon-supported platinum catalysts (Pt/HSC) are widely used in polymer electrolyte membrane fuel cells but often suffer from limited proton and oxygen transport within porous domains. To address these challenges, we integrate the ionic liquid [MTBD][beti] into Pt/HSC catalyst layers using two deposition methods-one-pot and sequential deposition-to tune IL distribution within micropores and mesopores. A combination of ex situ and in operando techniques were employed to elucidate electrode structure-performance relationships across a range of IL loadings. Sequential deposition achieved more efficient pore filling and higher IL retention at lower IL:C ratios, enabling enhanced proton conductivity and protection of active sites. Compared to the IL-free Pt/HSC, IL-modified electrodes demonstrated up to 28% improvement in mass activity and enhanced high-current-density performance under low relative humidity, while maintaining comparable performance under humidified conditions. Electrochemical impedance spectroscopy and CO displacement experiments reveal that improvements are linked to reduced ionic resistance and lower sulfonate adsorption on Pt sites, rather than changes in electrochemical surface area. However, excessive IL loading leads to mass transport losses. These results highlight the importance of selective pore filling and efficient IL distribution in achieving kinetic gains without compromising ionic and gas transport.

08 HYDROGEN↗
DOE OSTI2017

Photovoltaic performance of Ag-doped CdS quantum dots for solar cell application

Graphical abstract: Photovoltaic performance of un-doped and Ag-doped CdS quantum dots were studied. The enhancement in photovoltaic performance might be due to the increase in carrier concentration and additional energy level creation due to Ag doping in FTO/TiO{sub 2}/Ag-doped CdS QDs solar cell. - Highlights: • Un-doped and Ag-doped CdS QDs were successfully deposited on TiO{sub 2}/FTO. • Optical response was found to be high for 3% Ag-doped CdS QDs. • The absorption edge for the 3% Ag-doped CdS was found to be 550 nm. • The highest power conversion efficiency was 1.25% for 3% Ag-doped CdS QDs. - Abstract: Un-doped and Ag-doped CdS quantum dots (QDs) were deposited on spin coated TiO{sub 2} photoanode material by Successive Ionic Layer Adsorption and Reaction (SILAR) method. Systematic investigations were carried out in the deposited un-doped and Ag-doped CdS QDs using powder X-ray diffraction (PXRD), field emission scanning electron microscopy (FESEM) and UV–vis-NIR spectrum. Finally, the FTO/TiO{sub 2}/un-doped CdS and FTO/TiO{sub 2}/Ag-doped CdS QDs were successfully assembled to study the photovoltaic performance under standard one sun illumination of AM 1.5, 100 mW/cm{sup 2}. Photovoltaic parameters, such as short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency were found to be 1.37 mA/cm{sup 2}, 0.72 V, 61.5% and 0.61% respectively, for un-doped CdS. Ag-doped CdS QDs shows enhanced photovoltaic parameters such as short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency which were 2.35 mA cm{sup 2}, 0.74 V, 71.8% and 1.25% respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Highly stable and efficient hybrid perovskite solar cells improved with conductive polyanilines

Highlights: • MAPbI{sub 3} perovskite film has been fabricated and modified with polyanilines for highly stable and efficient solar cells. • For the C-PNAI modified perovskite solar cells, a PCE enhanced from 7.91% to 9.43% as the fill factor improved. • The C-PNAI surfaces of perovskite film assists in the hole transport to the conductive carbon in the device. • The improved stability is attributed to the –NH{sub 2}{sup +}– of C-PNAI cations on the surface of the perovskites. - Abstract: Methyl ammonium lead iodide (MAPbI{sub 3}) perovskite film has been fabricated and modified with conductive polyanilines (C- PANI) and demonstrated for highly stable and efficient solar cells. For the C-PANI modified perovskite solar cells (PSCs), the average short circuit current density increased by 13.8% compared with pristine perovskite film (i.e., from 15.9 to 18.1 mA/cm{sup 2}) and the fill factor also improved, eventually leading to a power conversion efficiency (PCE) enhancement from 7.91% to 9.43% with high reproducibility. The C-PANI acts as a scaffold for crystallization of the perovskite layer, and improves the perovskite photovoltaic performance and stability, attributed to the favorable interfacial interaction between –NH{sub 2}{sup +}– groups of C-PANI and I{sup −} of MAPbI{sub 3} perovskite. The C-PANI-rich surfaces of MAPbI{sub 3}/PNAI perovskite film may also assists in the hole transport to the conductive carbon in the device. This work demonstrates that C-PANI can enhance the PCE and stability of PSCs.

14 SOLAR ENERGY↗
DOE OSTI2019

On the validity of the dilute gas assumption for gap conductance calculations in nuclear fuel performance codes

Fill gas thermal conductivity’s dependence on pressure is neglected in today’s nuclear fuel performance codes. Current codes assume that gas behaves as a dilute gas, but the pressure effect is more pronounced at temperatures lower than ten times the critical temperature of each pure gas. The validity of this assumption for nuclear fuel performance is examined herein. Theories related to dilute and dense gas properties are presented, along with their validation against literature data at up to 30 MPa for selected inert gases. Underlying assumptions are clearly described for each model, and their possible impacts on gap conductance calculations are discussed. The dilute gas assumption is valid for helium because it behaves as a dilute gas. However, the assumption is not valid in most gap conductance calculations when the gap is mostly occupied with either lower conductivity gaseous fission products or an initial fill gas other than helium.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2017

Low irradiance losses of photovoltaic modules

Here, the efficiency of a photovoltaic cell/module changes, as the intensity of incident irradiance decreases, in a non linear way and these changes are referred to as low irradiance losses. In this study data from field experiments, developed and organized by the National Renewable Energy Laboratory, are used to evaluate the low irradiance losses for a variety of module technologies. The results demonstrate that the ratio of the normalized power divided by the normalized short circuit current provide a good measure of the module's low light efficiency losses after both the maximum power and the short circuit current are adjusted for temperature effects. The normalized efficiencies determined through the field data, spanning for several months, are in good agreement with those determined under controlled conditions in a solar simulator. An analytical relation for the normalized efficiency is proposed based on existing formulation for the fill factor. Despite the approximate nature of the fill factor relation, this approach produces reliable results. It will be shown that a normalized efficiency curve can be used to extract information on the series and shunt resistances of the PV module and that the shunt resistance as a function of solar irradiance can be studied. Alternately, this formulation can be used to study the low irradiance losses of a module when the internal resistances are known.

14 SOLAR ENERGY↗
DOE OSTI2019

Effect of the doping of PC61BM electron transport layer with carbon nanodots on the performance of inverted planar MAPbI3 perovskite solar cells

The doping effect of carbon nanodots (CNDs) in the PC61BM electron-transport layer on the performance of inverted planar MAPbI3 perovskite solar cells (PSCs) having two different kinds of the hole-transport layer, namely organic PEDOT:PSS and inorganic NiOx, was investigated. The CH3NH3PbI3 perovskite layer was deposited in air at 35% humidity. An average 11% and 12% enhancement of the power conversion efficiency (PCE) was achieved for 1 wt% CNDs doping in the PSCs with PEDOT:PSS and NiOx, respectively. This improvement is attributed to high electron density of CNDs resulting in a triple increase of the electrical conductivity of the PC61BM layer and passivation of the perovskite/PC61BM interface that is reflected by an increase of the open-circuit voltage. In line with this, parallel resistance and fill factor of the PSCs are also improved. Moreover, the energy-resolved electrochemical impedance spectroscopy revealed additional free-charge carriers in the PC61BM layer generated under illumination that were detected via the polaron states formation in the band gap with positive effect on the short-circuit current. All these factors contribute to the PCE improvement. Stability tests of the PSC with PEDOT:PSS under a continuous 24 hour 1.5 AM illumination showed a five times smaller final PCE decrease for the 1 wt% CNDs doping of the PC61BM layer comparing to the undoped counterpart. The passivation effect of CNDs, namely electron filling the traps formed by the photo-dimerization and photo-oxidation of PC61BM molecules, is responsible for this remarkable improvement of the short-term stability. © 2019 International Solar Energy Society.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Photoelectrochemical performance of DSSC with monodisperse and polydisperse ZnO SPs

Zinc oxide, ZnO, is one of oxide semiconductors being used in DSSC. ZnO is promising material for having fairly higher energy band gap and much higher bulk electron mobility than that of anatase TiO{sub 2}, the most widely used semiconductor for DSSC photoelectrode. This study introduces the synthesis of ZnO by precipitation method. The synthesis involves ZnAc dihydrate and diethylene glycol (DEG) for the chemicals. Various size of ZnO spherical particles (SPs) are obtained in polydisperse and monodisperse particles. Monolayer and bilayer DSSCs are fabricated in sandwich structure and sensitized with N719 dye for 3 and 5 hours. Monolayer DSSC using monodisperse particles (422 nm) is able to generate highest conversion efficiency of 0.569% (V{sub oc} = 541.3 mV, J{sub sc} = 1.92 mA/cm{sup 2}, and fill factor of 54.78%). Bilayer DSSC, i.e. combined 422 - 185 nm ZnO layer, can optimize the photocurrent action spectra in UV regime leading to high conversion efficiency of 0.568 (V{sub oc} = 568.2 mV, J{sub sc} = 2.22 mA/cm{sup 2}, and fill factor of 47.25%). The longer sensitizing time does not always produce better conversion efficiency since it can induce the dissolution of Zn atoms and formation of Zn{sup 2+} - dye resisting the electron transport from dye to ZnO photoelectrode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1 V is achieved. Of the photons absorbed in the limited spectral range of <450 nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49 mW/cm{sup 2} to 0.51 mW/cm{sup 2} at 40 suns and then falls 0.42 mW/cm{sup 2} at 150 suns. Under external heating, a maximum of 0.59 mW/cm{sup 2} is reached at 250 °C. Even at 400 °C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Device engineering of perovskite solar cells to achieve near ideal efficiency

Despite the exciting recent research on perovskite based solar cells, the design space for further optimization and the practical limits of efficiency are not well known in the community. In this letter, we address these aspects through theoretical calculations and detailed numerical simulations. Here, we first provide the detailed balance limit efficiency in the presence of radiative and Auger recombination. Then, using coupled optical and carrier transport simulations, we identify the physical mechanisms that contribute towards bias dependent carrier collection, and hence low fill factors of current perovskite based solar cells. Our detailed simulations indicate that it is indeed possible to achieve efficiencies and fill factors greater than 25% and 85%, respectively, with near ideal super-position characteristics even in the presence of Auger recombination.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

An enhanced mangiferaindica for dye sensitized solar cell application

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO{sub 2} conductive. The DSSC fabricated consist of 2.25 cm{sup 2} active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filled with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10{sup −2}, current density (Jsc)=4.07×10{sup −2}, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Beneficial effect of post-deposition treatment in high-efficiency Cu(In,Ga)Se{sub 2} solar cells through reduced potential fluctuations

World-record power conversion efficiencies for Cu(In,Ga)Se{sub 2} (CIGS) solar cells have been achieved via a post-deposition treatment with alkaline metals, which increases the open-circuit voltage and fill factor. We explore the role of the potassium fluoride (KF) post-deposition treatment in CIGS by employing energy- and time-resolved photoluminescence spectroscopy and electrical characterization combined with numerical modeling. The bulk carrier lifetime is found to increase with post-deposition treatment from 255 ns to 388 ns, which is the longest charge carrier lifetime reported for CIGS, and within ∼40% of the radiative limit. We find evidence that the post-deposition treatment causes a decrease in the electronic potential fluctuations. These potential fluctuations have previously been shown to reduce the open-circuit voltage and the device efficiency in CIGS. Additionally, numerical simulations based on the measured carrier lifetimes and mobilities show a diffusion length of ∼10 μm, which is ∼4 times larger than the film thickness. Thus, carrier collection in the bulk is not a limiting factor for device efficiency. By considering differences in doping, bandgap, and potential fluctuations, we present a possible explanation for the voltage difference between KF-treated and untreated samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗