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At least 1,747 records · Page 97

Dynamics and resilience of the unconventional charge density wave in ScV 6 Sn 6 bilayer kagome metal

Long-range electronic ordering descending from a metallic parent state constitutes a rich playground to study the interplay of structural and electronic degrees of freedom. In this framework, kagome metals are in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave transition. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the kagome metal ScV 6 Sn 6 as a platform to investigate this problem, since it features both a kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a charge-ordered phase that strongly affects its physical properties. By combining time-resolved reflectivity, first principles calculations and photo-emission experiments, we identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order, indicating that ScV 6 Sn 6 features an instance of charge order predominantly originating from phonons.

36 MATERIALS SCIENCE↗

Asymmetric charge separation and recombination in symmetrically functionalized σ–π hybrid oligosilanes

The flexibility of σ-conjugated silanes presents new opportunities for manipulating charge generation, transport, and non-linear optical properties of materials. Recently we synthesized a series of acceptor–donor–acceptor (ADA) compounds in which a methylated oligosilane core (D) is flanked by electron-deficient cyanovinyl-substituted arenes (A). Based on a detailed characterization of the photophysics of ADA and donor–acceptor (DA) architectures using both steady state and ultrafast spectroscopic measurements we illustrate that asymmetric charge separation occurs directly following light absorption. Lippert analysis of solvatochromic emission indicates large changes in dipole moments on excitation consistent with the formation of dipolar emissive states. Time resolved absorption measurements reveal common excited-state relaxation behavior across molecular structures: spectral dynamics associated with the relaxation of nascent excited states occur on a common timescale for all structures within the same solvent environment, whereas charge recombination via excited-state decay consistently follows a common energy gap law. Ultrafast time-resolved Raman measurements reveal that reduction of the cyanovinyl moieties is instantaneous with excitation, with only minor shifts in vibrational features over the course of excited-state relaxation. We conclude that excited-state symmetry breaking that gives rise to asymmetric intramolecular charge transfer (ICT) is associated with the conformation of the central Si chain. In contrast, ultrafast solvent reorganization or solvent-controlled intramolecular dynamics only serve to stabilize nascent dipolar excited states, rather than induce charge separation from an initial quadrupolar state.

Zhou, Jiawang↗

Charge-patching method for the calculation of electronic structure of polypeptides

Theoretical study of the electronic structures of protein is a fundamental challenge in computational biochemistry due to the large size of the systems. The electronic structure of a protein is important for some of the important protein functionalities, such as photosynthesis. Here, we explored the charge-patching method to calculate the electronic structure of polypeptides. This method generates the charge densities of the systems by patching the charge motifs calculated from small prototype systems. The method was tested on a range of polypeptides, including the glycine polypeptide in 2 7 -ribbon, α-helix, 3 10 -helix, and β-strand structures. After the charge density profiles of these systems were obtained, the electronic structures of these glycine polypeptides were further calculated based on density functional theory (DFT) using a folded-spectrum method. The highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) were analyzed and compared with conventional direct DFT calculations. The charge-patching method results were found to be in good agreement with the directed DFT results.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer

When an organic semiconductor (OSC) is blended with an electron acceptor molecule that can act as a p-type dopant, there should ideally be complete (integer) transfer of charge from the OSC to the dopant. However, some dopant–OSC blends instead form charge transfer complexes (CTCs), characterized by fractional charge transfer (CT) and strong orbital hybridization between the two molecules. Fractional CT doping does not efficiently generate free charge carriers, but it is unclear what conditions lead to incomplete charge transfer. Here we show that by modifying film processing conditions in the semiconductor–dopant couple poly(3-hexylthiophene):2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (P3HT:F4TCNQ), we can selectively obtain nearly pure integer or fractional CT phases. Fractional CT films show electrical conductivities approximately 2 orders of magnitude lower than corresponding integer CT films, and remarkably different optical absorption spectra. Grazing incidence wide-angle X-ray diffraction (GIXD) reveals that fractional CT films display an unusually dense and well-ordered crystal structure. These films show lower paracrystallinity and shorter lamellar and π-stacking distances than undoped films processed under similar conditions. Using plane-wave DFT we obtain a structure with unit cell parameters closely matching those observed by GIXD. This first-ever observation of both fractional and integer CT in a single OSC–dopant system demonstrates the importance of structural effects on OSC doping and opens the door to further studies.

36 MATERIALS SCIENCE↗

Binary small molecule organic nanoparticles exhibit both direct and diffusion-limited ultrafast charge transfer with NIR excitation

In this study, we describe a facile, one-step synthesis of a binary organic nanoparticle composed completely of NIR-absorbing small molecules, a quatterylene diimide and a vanadyl napthalocyanine, using Flash Nanoprecipitation. We show that the molecules are co-encapsulated within an amphiphilic block copolymer shell by observing distinct ultrafast dynamics in the binary nanoparticles compared to nanoparticles of their individual components, which we rationalize as a photoinduced charge transfer. We then draw similarities between the charge transfer dynamics studied in our system and the charge dissociation process in macroscale organic bulk heterojunction blends for OPV applications by assigning the ultrafast time component (~10 ps) to direct interfacial charge transfer and the slow component (70–200 ps) to diffusion limited charge transfer. This discovery can inspire the development of mixed-composition nanoparticles with new functionality for optoelectronic and theranostic applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Charge fluctuations from molecular simulations in the constant-potential ensemble

We revisit the statistical mechanics of charge fluctuations in capacitors. In constant-potential classical molecular simulations, the atomic charges of electrode atoms are treated as additional degrees of freedom which evolve in time so as to satisfy the constraint of fixed electrostatic potential for each configuration of the electrolyte. The present work clarifies the role of the overall electroneutrality constraint, as well as the link between the averages computed within the Born–Oppenheimer approximation and that of the full constant-potential ensemble. This allows us in particular to derive a complete fluctuation–dissipation relation for the differential capacitance, that includes a contribution from the charge fluctuations (around the charges satisfying the constant-potential and electroneutrality constraints) also present in the absence of an electrolyte. We provide a simple expression for this contribution from the elements of the inverse of the matrix defining the quadratic form of the fluctuating charges in the energy. We then illustrate numerically the validity of our results, and recover the expected continuum result for an empty capacitor with structureless electrodes at large inter-electrode distances. By considering a variety of liquids between graphite electrodes, we confirm that this contribution to the total differential capacitance is small compared to that induced by the thermal fluctuations of the electrolyte.

74 ATOMIC AND MOLECULAR PHYSICS↗

Investigation of a bacteriochlorin-containing pentad array for panchromatic light-harvesting and charge separation

A new pentad array designed to exhibit panchromatic absorption and charge separation has been synthesized and characterized. The array is composed of a triad panchromatic absorber (a bis(perylene-monoimide)-porphyrin) to which are appended an electron acceptor (perylene-diimide) and an electron donor/hole acceptor (bacteriochlorin) in a crossbar arrangement. The motivation for incorporation of the bacteriochlorin versus a free-base or zinc chlorin utilized in prior constructs was to facilitate hole transfer to this terminal unit and thereby achieve a higher yield of charge separation across the array. The intense S 0 → S 1 (Q y ) band of the bacteriochlorin also enhances absorption in the near-infrared spectral region. Due to synthetic constraints, a phenylethyne linker was used to join the bacteriochlorin to the core porphyrin of the panchromatic triad rather than the diphenylethyne linker employed for the prior chlorin-containing pentads. Static and time-resolved photophysical studies reveal enhanced excited-state quenching for the pentad in benzonitrile and dimethyl sulfoxide compared to the prior chlorin-containing analogues. Success was only partial, however, as a long-lived charge separated state was not observed despite the improved energetics for the final ground-state hole/electron-shift reaction. The apparent reason is more facile competing charge-recombination due to the shorter bacteriochlorin – porphyrin linker that increases electronic coupling for this process. Furthermore, the studies highlight design criteria for balancing panchromatic absorption and long-lived charge separation in molecular architectures for solar-energy conversion.

14 SOLAR ENERGY↗

Stepwise deprotonation of truxene: structures, metal complexation, and charge-dependent optical properties

As a planar subunit of C 60 -fullerene, truxene (C 27 H 18 ) represents a highly symmetrical rigid hydrocarbon with strong blue emission. Herein, we used truxene as a model to investigate the chemical reactivity of a fullerene fragment with alkali metals. Monoanion, dianion, and trianion products with different alkali metal counterions were crystallized and fully characterized, revealing the core curvature dependence on charge and alkali metal coordination. Moreover, a proton nuclear magnetic resonance study coupled with computational analysis demonstrated that deprotonation of the aliphatic CH 2 segments introduces aromaticity in the five-membered rings. Importantly, the UV-vis absorption and photoluminescence of truxenyl anions with different charges reveal intriguing charge-dependent optical properties, implying variation of the electronic structure based on the deprotonation process. An increase in aromaticity and π-conjugation yielded a red shift in the absorption and photoluminescent spectra; in particular, large Stokes shifts were observed in the truxenyl monoanion and dianion with high emission quantum yield and time of decay. Overall, stepwise deprotonation of truxene provides the first crystallographically characterized examples of truxenyl anions with three different charges and charge-dependent optical properties, pointing to their potential applications in carbon-based functional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Autonomous plug and play electric vehicle charging scenarios including reactive power provision: a probabilistic load flow analysis

Electric vehicle (EV) charging can have various impacts on low‐voltage distribution systems, along with increasing the uncertainty of network load levels. One method for capturing the statistical uncertainty is probabilistic load flow (PLF). A primary concern of such an approach is determining the correlation between the input variables. Since data are limited, a 1 min resolution bottom‐up time‐variant load model, capturing the changing voltage dependencies of the load, is used for modelling household electrical demand to provide pseudo‐meter data for the three‐phase PLF analysis of a residential distribution network. The correlation between the household and EV charging loads are implicitly taken into account by modelling the EV plug‐in and departure times with the corresponding occupancy model. Two autonomous plug‐and‐play charging scenarios are compared with a standard charging arrangement at both unity and 0.95 capacitive power factors. Four different PLF input correlation scenarios, varying from fully correlated to fully independent, are considered. The proposed charging scenarios and reactive power provision reduce the likelihood of system voltage violations introduced by EVs. The PLF results are verified against those from the initial time‐series analysis providing valuable insight into the uncertainty introduced by EVs and the correlation between household and EV loads.

Melhorn, Alexander C.↗

Exciton delocalization, charge transfer, and electronic coupling for singlet excitation energy transfer between stacked nucleobases in DNA: An MS-CASPT2 study

Exciton delocalization and singlet excitation energy transfer have been systematically studied for the complete set of 16 DNA nucleobase dimers in their ideal, single-strand stacked B-DNA conformation, at the MS-CASPT2 level of theory. The extent of exciton delocalization in the two lowest (π,π{sup *}) states of the dimers is determined using the symmetrized one-electron transition density matrices between the ground and excited states, and the electronic coupling is calculated using the delocalization measure and the energy splitting between the states [see F. Plasser, A. J. A. Aquino, W. L. Hase, and H. Lischka, J. Phys. Chem. A 116, 11151–11160 (2012)]. The calculated couplings lie between 0.05 eV and 0.14 eV. In the B-DNA conformation, where the interchromophoric distance is 3.38 Å, our couplings deviate significantly from those calculated with the transition charges, showing the importance of orbital overlap components for the couplings in this conformation. The calculation of the couplings is based on a two-state model for exciton delocalization. However, in three stacks with a purine in the 5{sup ′} position and a pyrimidine in the 3{sup ′} one (AT, GC, and GT), there is an energetically favored charge transfer state that mixes with the two lowest excited states. In these dimers we have applied a three-state model that considers the two locally excited diabatic states and the charge transfer state. Using the delocalization and charge transfer descriptors, we obtain all couplings between these three states. Our results are important in the context of DNA photophysics, since the calculated couplings can be used to parametrize effective Hamiltonians to model extended DNA stacks. Our calculations also suggest that the 5{sup ′}-purine-pyrimidine-3{sup ′} sequence favors the formation of charge transfer excited states.

74 ATOMIC AND MOLECULAR PHYSICS↗

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

36 MATERIALS SCIENCE↗

Implementation and analysis of an innovative digital charge amplifier for hysteresis reduction in piezoelectric stack actuators

Smart actuators are the key components in a variety of nanopositioning applications, such as scanning probe microscopes and atomic force microscopes. Piezoelectric actuators are the most common smart actuators due to their high resolution, low power consumption, and wide operating frequency but they suffer hysteresis which affects linearity. In this paper, an innovative digital charge amplifier is presented to reduce hysteresis in piezoelectric stack actuators. Compared to traditional analog charge drives, experimental results show that the piezoelectric stack actuator driven by the digital charge amplifier has less hysteresis. It is also shown that the voltage drop of the digital charge amplifier is significantly less than the voltage drop of conventional analog charge amplifiers.

36 MATERIALS SCIENCE↗

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup −5} e/√(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup −6} e{sup 2}/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of argon addition on plasma parameters and dust charging in hydrogen plasma

Experimental results on effect of adding argon gas to hydrogen plasma in a multi-cusp dusty plasma device are reported. Addition of argon modifies plasma density, electron temperature, degree of hydrogen dissociation, dust current as well as dust charge. From the dust charging profile, it is observed that the dust current and dust charge decrease significantly up to 40% addition of argon flow rate in hydrogen plasma. But beyond 40% of argon flow rate, the changes in dust current and dust charge are insignificant. Results show that the addition of argon to hydrogen plasma in a dusty plasma device can be used as a tool to control the dust charging in a low pressure dusty plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Electronic coupling calculations with transition charges, dipoles, and quadrupoles derived from electrostatic potential fitting

A transition charge, dipole, and quadrupole from electrostatic potential (TrESP-CDQ) method for electronic coupling calculations is proposed. The TrESP method is based on the classical description of electronic Coulomb interaction between transition densities for individual molecules. In the original TrESP method, only the transition charge interactions were considered as the electronic coupling. In the present study, the TrESP method is extended to include the contributions from the transition dipoles and quadrupoles as well as the transition charges. Hence, the self-consistent transition density is employed in the ESP fitting procedure. To check the accuracy of the present approach, several test calculations are performed to a helium dimer, a methane dimer, and an ethylene dimer. As a result, the TrESP-CDQ method gives a much improved description of the electronic coupling, compared with the original TrESP method. The calculated results also show that the self-consistent treatment to the transition densities contributes significantly to the accuracy of the electronic coupling calculations. Based on the successful description of the electronic coupling, the contributions to the electronic coupling are also analyzed. This analysis clearly shows a negligible contribution of the transition charge interaction to the electronic coupling. Hence, the distribution of the transition density is found to strongly influence the magnitudes of the transition charges, dipoles, and quadrupoles. The present approach is useful for analyzing and understanding the mechanism of excitation-energy transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design of the low energy beam transport line between CARIBU and the EBIS charge breeder

An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed to breed radioactive beams from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility at ATLAS. The EBIS-CB will replace the existing ECR charge breeder to increase the intensity and improve the purity of reaccelerated radioactive ion beams. The EBIS-CB is in the final stage of off-line commissioning. Currently, we are developing a low energy beam transport (LEBT) system to transfer CARIBU beams to the EBIS-CB. As was originally planned, an RFQ cooler-buncher will precede the EBIS-CB. Recently, it was decided to include a multi-reflection time-of-flight (MR-TOF) mass-spectrometer following the RFQ. MR-TOF is a relatively new technology used to purify beams with a mass-resolving power up to 3×10{sup 5} as was demonstrated in experiments at CERN/ISOLDE. Very high purity singly-charged radioactive ion beams will be injected into the EBIS for charge breeding and due to its inherent properties, the EBIS-CB will maintain the purity of the charge bred beams. Possible contamination of residual gas ions will be greatly suppressed by achieving ultra-high vacuum in the EBIS trap. This paper will present and discuss the design of the LEBT and the overall integration of the EBIS-CB into ATLAS.

43 PARTICLE ACCELERATORS↗

In situ measurement of fixed charge evolution at silicon surfaces during atomic layer deposition

Interfacial fixed charge or interfacial dipoles are present at many semiconductor-dielectric interfaces and have important effects upon device behavior, yet the chemical origins of these electrostatic phenomena are not fully understood. We report the measurement of changes in Si channel conduction in situ during atomic layer deposition (ALD) of aluminum oxide using trimethylaluminum and water to probe changes in surface electrostatics. Current-voltage data were acquired continually before, during, and after the self-limiting chemical reactions that result in film growth. Our measurements indicated an increase in conductance on p-type samples with p{sup +} ohmic contacts and a decrease in conductance on analogous n-type samples. Further, p{sup +} contacted samples with n-type channels exhibited an increase in measured current and n{sup +} contacted p-type samples exhibited a decrease in current under applied voltage. Device physics simulations, where a fixed surface charge was parameterized on the channel surface, connect the surface charge to changes in current-voltage behavior. The simulations and analogous analytical relationships for near-surface conductance were used to explain the experimental results. Specifically, the changes in current-voltage behavior can be attributed to the formation of a fixed negative charge or the modification of a surface dipole upon chemisorption of trimethylaluminum. These measurements allow for the observation of fixed charge or dipole formation during ALD and provide further insight into the electrostatic behavior at semiconductor-dielectric interfaces during film nucleation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗