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At least 1,747 records · Page 97

Radiation-Hard Parallel Readout Circuit for Low-Frequency Voltage Signal Measurements

NASA Goddard Space Flight Center (GSFC) has successfully developed and tested a custom-designed low-noise multi-channel digitizer (MCD) application specific integrated circuit (ASIC) for operation in harsh radiation environments. The MCD-ASIC is optimized for low-frequency and low-voltage signal measurements from sensors and transducers. It has 20 input channels where each channel is comprised of auto-zeroed chopper variable-gain amplifier, post amplifier, and a second order ∑∆ modulator. ∑∆ analog-to-digital converter (ADC) relies on oversampling and noise shaping to achieve high-resolution conversion. However, the MCD-ASIC requires digital filtering and decimation to convert the output single bit streams from the ADC to useful data words. A parallel digital platform such as a field-programmable-gate-array (FPGA) is highly suitable to fully leverage the capabilities of the MCD-ASIC. The FPGA controls the MCD-ASIC via serial peripheral interface (SPI) protocol and acquires data from it. A Python-script communicates with the FPGA board through a USB interface on a cross operating platform. Using this architecture, the system is capable of monitoring up to 20 voltage readout channels simultaneously in a real-time manner. Each channel’s parameters can be programmed independently allowing maximum user versatility. In this paper, we present analysis of the analog front-end, the implementation of the digital processing unit on the FPGA, and provide noise performance results from the MCD-ASIC readout.

ASIC↗

Convergent Aeronautics Solutions (CAS) High Voltage Hybrid Electric Propulsion (HVHEP) Activity

Overview of Convergent Aeronautics Solutions (CAS) High Voltage Hybrid Electric Propulsion (HVHEP) activity. CAS HVHEP activity demonstrated feasibility of variable frequency, variable high voltage power system using doubly fed electric machines (DFM), and provided 90% reduction in power electronic weight for 35 megawatt system. DFM enables multi-phase (9) ac operation, with enhanced control and integrated protection methods for improved safety through minimization of fault energy.

CAS↗

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗

Electrical system architecture having high voltage bus

An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

42 ENGINEERING↗

Charge Lifetime Study of K2CsSb Photocathode Inside a JLAB DC High Voltage Gun

Two photocathodes are frequently considered for generating high average current electron beams and/or beams with high brightness for current and future accelerator applications: GaAs:Cs and K2CsSb. Each photocathode has advantages and disadvantages, and need to demonstrate performance at 'production' accelerator facilities. To this end a K2CsSb photocathode was manufactured at Brookhaven National Lab and delivered to Jefferson Lab within a compact vacuum apparatus at pressure {approx} 5 x 10{sup -11} Torr. This photocathode was installed inside a dc high voltage photogun biased at voltages up to 200 kV, and illuminated with laser light at 440 or 532 nm, to generate beams up to 20 mA. Photocathode charge lifetime measurements indicate that under some conditions this cathode has exceptionally high charge lifetime, without measurable QE decay, even from the center of the photocathode where operation using GaAs photocathodes is precluded due to ion bombardment. These studies also suggest a complex QE decay mechanism likely related to chemistry and localized heating via the laser beam.

43 PARTICLE ACCELERATORS↗

Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack

Recent studies have shown that La{sub 2}O{sub 3} films can be used to adjust the threshold voltage (V{sub t}) of NMOS Hf-based high-k/metal gate devices to desirable values, and a dipole at the high-k/SiO{sub 2} interface has been proposed to explain the V{sub t} shifts. In order to investigate the mechanism of the V{sub t} shift further, we have measured the flatband voltage (V{sub fb}) and Si band bending of technologically relevant TiN/HfO{sub 2}/La{sub 2}O{sub 3}/SiO{sub 2}/p-Si stacks where the thickness and position of the La{sub 2}O{sub 3} layer have been systematically varied. We observed systematic changes in V{sub fb}, Si band bending and the HfO{sub 2}-Si valence band offset as a function of La{sub 2}O{sub 3} layer thickness and position. These changes can be explained by a band alignment model that includes a dipole at the high-k/SiO{sub 2} interface, thus supporting the work of previous authors. In addition, we have derived the theoretical relationship between V{sub fb} and Si band bending, which agrees well with our experimental measurements.

36 MATERIALS SCIENCE↗

Autonomous and Adaptive Voltage Control using Multiple Distributed Energy Resources

Voltage regulation using distributed energy resources (DE) or distributed generators (DG) with power electronics interfaces and logic control has drawn increasing interests. This paper addresses the challenges of controlling multiple DEs to regulate voltages in distribution systems using an autonomous and adaptive control approach. Theoretical analysis shows that there exists a corresponding formulation of the dynamic control parameters with multiple DEs. Hence, the proposed control method is theoretically solid. Simulation results confirm that this method is capable of satisfying the fast response requirement for operational use without causing oscillation or inefficiency. This method is autonomous based on local information and the other DEs input without the instructions from any control center, is widely adaptive to variable power system operational situations, and has a high tolerance to data shortage of systems parameter. Hence, it is suitable for broad utility application

Li, Huijuan↗

Resistive foil edge grading for accelerator and other high voltage structures

In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

42 ENGINEERING↗

High voltage switch triggered by a laser-photocathode subsystem

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

43 PARTICLE ACCELERATORS↗

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Superstrate sub-cell voltage-matched multijunction solar cells

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

14 SOLAR ENERGY↗

New controller for high voltage converter modulator at spallation neutron source

The Spallation Neutron Source (SNS) has developed a new control system for the High Voltage Convertor Modulator (HVCM) at the SNS to replace the original control system which is approaching obsolescence. The original system was based on controllers for similar high voltage systems that were already in use [1]. The new controller, based on National Instruments PXI/FlexRIO Field Programmable Gate Array (FPGA) platform, offers enhancements such as modular construction, flexibility and non-proprietary software. The new controller also provides new capabilities like various methods for modulator pulse flattening, waveform capture, and first fault detection. This paper will discuss the design of the system, including the human machine interface, based on lessons learned at the SNS and other projects. It will also discuss performance and other issues related to its operation in an accelerator facility which requires high availability. To date, 73% of the operational HVCMs have been upgraded to with the new controller, and the remainder are scheduled for completion by mid-2017.

Wezensky, Mark W↗

Gas stream analysis using voltage-current time differential operation of electrochemical sensors

A method for analysis of a gas stream. The method includes identifying an affected region of an affected waveform signal corresponding to at least one characteristic of the gas stream. The method also includes calculating a voltage-current time differential between the affected region of the affected waveform signal and a corresponding region of an original waveform signal. The affected region and the corresponding region of the waveform signals have a sensitivity specific to the at least one characteristic of the gas stream. The method also includes generating a value for the at least one characteristic of the gas stream based on the calculated voltage-current time differential.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Compatibility of a Conventional Non-aqueous Magnesium Electrolyte with a High Voltage V 2 O 5 Cathode and Mg Anode

A major roadblock for magnesium ion battery development is the availability of an electrolyte that can deposit Mg reversibly and at the same time is compatible with a high voltage cathode. We report a prospective full magnesium cell utilizing a simple, non-aqueous electrolyte composed of high concentration magnesium bis(trifluoromethane sulfonyl)imide in diglyme, which is compatible with a high voltage vanadium pentoxide (V 2 O 5 ) cathode and a Mg metal anode. For this system, plating and stripping of Mg metal can be achieved with magnesium bis(trifluoromethane sulfonyl)imide in diglyme electrolyte over a wide concentration range, however, reversible insertion of Mg into V 2 O 5 cathode can only be attained at high electrolyte concentrations. Reversible intercalation of Mg into V 2 O 5 is characterized and confirmed by X-ray diffraction, X-ray absorption near edge spectroscopy and energy dispersive spectroscopy.

Sa, Niya↗

Compensating for parasitic voltage drops in circuit arrays

Various technologies for improving uniformity of operation of elements in an array circuit are described herein. In an exemplary embodiment, a plurality of resistive elements are incorporated into an array circuit such that voltages developed across any two elements is substantially the same when an equal voltage is applied to energize the elements. In a crossbar array circuit that comprises a plurality of elements arranged in rows and columns, the resistance of each of the resistive elements is based upon a row or column to which the resistive element is connected.

42 ENGINEERING↗

Trends in SiC MOSFET Threshold Voltage and ON-Resistance Measurements from Thermal Cycling and Electrical Switching Stresses: Preprint

Integrating SiC power MOSFETs is very attractive for advancing power electronic systems, yet the system reliability with new devices remains in question. This work presents two accelerated test experiments to further investigate the packaging and semiconductor failures of a TO-247 SiC MOSFET. First, a variation on power cycling experiments -- switching cycling -- is introduced. Traditional power cycling experiments utilize conduction losses to self-heat the device where a large temperature swing causes degradation at the packaging level. However, by decreasing the on-time such that the device only turns on and immediately turns off, the temperature swing is decreased and the semiconductor itself is degraded. This work shows experimental device degradation caused by continuous switching events - switching cycling, at 90% of the device's breakdown voltage. Second, thermal cycling experiments were conducted between -40 degrees C and 175 degrees C to observe degradation in the mechanical packaging of the device. Experimentally-measured changes in threshold voltage and ON-resistance are recorded in both experiments and compared. These results also illustrate the spectrum between device and package degradation from accelerated test methods.

33 ADVANCED PROPULSION SYSTEMS↗

High voltage power chip module

A power die module using a compression connection to a power die in a small package with corona extenders positioned around short efficient path exterior electrical connections. The module is built from a baseplate with connected sidewalls forming an interior compartment holding a power substrate with attached threaded inserts. A printed circuit board bolted to the power substrate with high voltage power die compressively held between the board and the substrate. The compressive hold enhances the electrical connections between the contacts on the top and bottom of the power die and either the power substrate or the printed circuit board. Exterior blade connectors extend upward from the printed circuit board through blade apertures in a lid that covers the interior compartment. The lid includes corona extenders positioned around the blade apertures to allow for high voltage applications while maintaining a small size lightweight package. The sidewall has a perimeter that also includes one or more corona extenders.

42 ENGINEERING↗