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At least 1,747 records · Page 97

Stress distribution during cold compression of a quartz aggregate using synchrotron X-ray diffraction: Observed yielding, damage, and grain crushing

Herein, we report new experimental results that quantify the stress distribution within a quartz aggregate during pore collapse and grain crushing. The samples were probed with synchrotron X-ray diffraction as they were compressed in a multianvil deformation apparatus at room temperature from low pressure (tens of megapascal) to pressures of a few gigapascal. In such a material, stress is likely to concentrate at grain-to-grain contacts and vanish where grains are bounded by open porosity. Therefore, internal stress is likely to vary significantly from point to point in such an aggregate, and hence, it is important to understand both the heterogeneity and anisotropy of such variation with respect to the externally applied stress. In our quartz aggregate (grain size of ~4 μm), the measured diffraction peaks broaden asymmetrically at low pressure (tens of megapascal), suggesting that open pores are still a dominant characteristic of grain boundaries. In contrast, a reference sample of novaculite (a highly dense quartz polycrystal, grain size of ~6–9 μm) showed virtually no peak broadening with increasing pressure. In the quartz aggregate, we observed significant deviation in the pressure-volume curves in the range of P = 400–600 MPa. We suggest that this marks the onset of grain crushing (generally denoted as P* in the rock mechanic literature), which is commonly reported to occur in sandstones at pressures of this order, in general agreement with a Hertzian analysis of fracturing at grain contacts.

58 GEOSCIENCES↗

Free-Standing Bialkali Photocathodes Using Atomically Thin Substrates

This study reports successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave the way for an ultimate goal of encapsulating technologically relevant photocathodes for accelerator technology with an atomically thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17% at approximate to 3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signature features of K2CsSb including the characteristic absorption at approximate to 2.5 eV. Materials characterization based on X-ray fluorescence and X-ray diffraction reveals that the composition and crystal quality of these photocathodes deposited on graphene is comparable to those deposited on a reference substrate. Quantitative agreement between optical calculations and QE measurements for the K2CsSb on free suspended graphene and a graphene-coated metal substrate further confirms the high-quality interface between the photocathodes and graphene. Finally, a correlation between the QE and graphene quality as characterized by Raman spectroscopy suggests that a lower density of atomistic defects in the graphene films leads to higher QE of the deposited K2CsSb photocathodes.

accelerator technology↗

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope

A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (E V + 0.56 eV) within Ag 0.2 Cu 0.8 In 1–x Ga x Se 2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm 2 ) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state’s spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. Furthermore, this first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the longsuspected Cu In/Ga substitutional defects are indeed the most likely source of the E V + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general.

14 SOLAR ENERGY↗