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At least 1,747 records · Page 97

Thin film confinement reduces compatibility in symmetric ternary block copolymer/homopolymer blends

Here, the thin film phase behavior of ternary blends consisting of symmetric poly(styrene) (PS)– b –poly(dimethylsiloxane)(PDMS), PS, and PDMS was investigated using X–ray reflectivity (XRR) and atomic force microscopy (AFM). This system is strongly segregated, and the homopolymers are approximately the same length as the corresponding blocks of the copolymer. The XRR and AFM data are used to quantify changes in domain spacing ( L ) and morphology evolution with increasing homopolymer content (Φ H ). In 100 nm thick films, from Φ H = 0 to 0.20, the system maintains a perfect parallel lamellar structure and domains swell as predicted based on theory; however, from Φ H = 0.30 to 0.50, a morphology transition to a “dot pattern” morphology (tentatively identified as perforated lamellae) and mixed morphologies were observed before macrophase separation. In thicker films, dot patterns were observed for a broad range of Φ H before macrophase separation. The absence of the bicontinuous microemulsion phase reported for bulk blends and thin films of perpendicular lamellae and the presence of dot patterns/perforated lamellae are attributed to preferential migration of the PDMS homopolymer to the wetting layers located at the substrate and free air interfaces, which leads to an asymmetric composition within the film and morphology transition.

36 MATERIALS SCIENCE↗

Polarization Mechanisms in P(VDF-TrFE) Ferroelectric Thin Films

Ferroelectric polymers have amassed tremendous attention due to several attractive properties including high breakdown strength, low dielectric loss, relatively fast charge/discharge rates and greater flexibility than their ceramic counterparts. In order to achieve enhanced energy efficiency in high-energy storage capacitor applications, it is desirable to obtain slim polarization hysteresis loops for ferroelectric polymer films. Here, it has been demonstrated that promotion of large crystallites and γ phase content through thermal annealing provides a cost-effective way to obtain a quasi-linear polarization response in a PVDF co-polymer thin film. The polarization mechanisms underlying a thin hysteresis loop in the thermally annealed film are elucidated using direct experimental insights from in situ synchrotron diffraction with two-dimensional detection. It has been demonstrated that the susceptibility for electric-field-induced structural changes is higher in the defective ferroelectric γ phase than the polar phase β, due to a higher flexibility for accommodation of gauche bond along the carbon chain. In addition, the polymer chains in the γ phase also exhibit a range of different responses depending on their orientations with respect to the electric field. These conclusions are broadly significant as they provide a fundamental basis for rational design of phase assemblages to obtain tailor-made properties in ferroelectric polymer films.

36 MATERIALS SCIENCE↗

Band Bending at CdTe Solar Cell Contacts: Correlating Electro‐Optical and X‐Ray Photoelectron Spectroscopy Analyses of Thin Film Solar Cells

With the semiconductor bulk properties reaching target values for highly efficient solar cells, efforts are applied to reduce losses at solar cell interfaces and contacts. Advances in understanding back contacts in thin‐film polycrystalline CdTe solar cells, a leading thin‐film PV technology, are reported. By using X‐Ray photoelectron spectroscopy, Kelvin probe spectroscopy, time‐ and energy‐resolved photoluminescence, defects at the back contact are analyzed. Densities of recombination centers and charged defects that induce near‐back‐contact band bending, both resulting in recombination losses, were estimated. Electro‐optical and surface analysis results are integrated into a device model, simulating the performance of CdSeTe/CdTe solar cells with 902 mV open circuit voltage.

14 SOLAR ENERGY↗

Understanding and Advancing Bifacial Thin Film Solar Cells under Dual Illumination

There is a great deal of interest in increasing the energy yield from thin film solar cells by implementing bifacial operation. However, deleterious band bending and high interface recombination at the back transparent electrode can cause problems. Herein, it is investigated how bifacial thin film devices perform when illuminated through the front, back, and simultaneously through both interfaces using numerical modeling. It is shown that the downward band bending near the back interface is reduced during illumination when the carrier concentration is low. This effect is not found when the doping is relatively high, but the minority carrier distribution is still modified. Under either condition, the power generated under bifacial illumination exceeds the sum of the power generated when the illumination is solely from the back or the front. It is also shown that the back-illuminated device performance is independent of the angle at which the light enters the back of the device, which provides accommodation for scattered light. Finally, the power enhancement is calculated for bifacial devices relative to front-illuminated devices, and is shown that any significant loss in frontside power generation is difficult to overcome with back illumination under real-world albedo conditions.

CdTe↗

Nanomechanics of Ferroelectric Thin Films and Heterostructures

The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

Ferroelectrics↗

Tailor Made Thin Film Composite Membranes: Potentiality Towards Removal of Hydroquinone from Water

The study investigated the use of thin film composite membrane (TFC) as a potential candidate for hydroquinone removal from water. Thin film composite membranes were prepared by polyamide coating on Polysulfone asymmetric membrane. FTIR study was performed to verify the Polysulfone as well as polyamide functionality. TFC membrane was characterized by contact angle, zeta potential, scanning electron microscopy studies. The salt rejection trend was seen from 500 to 1000 mg/L. The membrane is marked by permeability co-efficient B based on solution diffusion studies. The value is 0.98 × 10{sup −6} m/s for NaCl solution at 1.4 MPa. The separation performance was 88.87% for 5 mg/L hydroquinone at 1.4 MPa. The separation was little bit lowered in acid medium because of the nature of the membrane and feed solute chemistry. The ‘pore swelling’ and ‘salting out’ influenced hydroquinone separation in the presence of NaCl. The hydroquinone separation was 80.63% in 1000 mg/L NaCl solution. In acidic pH, NaCl separation was influenced much more compared to hydroquinone. The separation is influenced by field water matrix.

36 MATERIALS SCIENCE↗

RF Plasma Polymerization of Orange Oil and Characterization of the Polymer Thin Films

The present study describes an environmentally friendly approach to fabricate hydrocarbon-rich polymer thin films from a bio-renewable precursor, orange oil, cold extracted from orange peels using radio frequency plasma polymerization. The polymer thin films fabricated at different RF power level (10–75 W) were characterized with variable angle spectroscopic ellipsometry, UV–visible spectroscopy, Fourier transform infrared spectroscopy and atomic force microscopy. Optical characterization showed that independent of deposition power films exhibited good transparency (~ 90%) in the visible region and a refractive index of 1.55 at 500 nm. The optical band gap measured around 3.60 eV and falls within the insulating region. The atomic force microscopic images revealed that the surface is pinhole-free in nature and smooth at nanoscale, with average surface roughness dependent on the deposition power. Film hardness increased from 0.50 to 0.78 GPa as applied power increased from 10 to 75 W.

36 MATERIALS SCIENCE↗

Magnetization in Nanocrystalline PLD Zinc Ferrite Thin Films Deposited on Fused Quartz Substrate

The nanocrystalline zinc ferrite (ZnFe{sub 2}O{sub 4}) thin films were grown on the fused quartz substrate using pulsed laser deposition. The effects of atmospheric conditions on structural, magnetic, and morphological properties have been systematically studied using X-ray diffraction, vibrating sample magnetometry, and atomic force microscopy. The films showed textured growth of zinc ferrite for the substrate temperatures at ≥ 600 °C irrespective of the ambient environment. Interestingly, thin films of zinc ferrite showed a magnetic hysteresis loop in contrast to the paramagnetic nature of their bulk counterpart. The value of saturation magnetization (4πM{sub s}) increased from 130 to 360 G when the substrate temperature was increased from room temperature (RT) to 800 °C in the oxygen atmosphere. In the absence of oxygen pressure, the value of 4πM{sub s} is observed to be 330 G for the film deposited at RT and found to increase to a value of 670 G when the film is deposited at 400 °C and the maximum value of 2580 G is observed for the film deposited at 700 °C. However, the value of 4πM{sub s} of 800 °C dropped down to 2000 G.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Spin Wave Gap and Switching Field in Thin Films with In-Plane Anisotropy

In this paper, we have calculated the spin wave gap and the angular dependence of magnetization reversal in a single-layer thin magnetic film that includes the strong perpendicular magnetic anisotropy and in-plane anisotropy. The film is assumed to be under the influence of the out-of-plane direction of the applied magnetic field at zero temperature. Using the quantum model, it is shown that the calculated equations present a nonzero spin wave gap at zero magnetic field which is strongly affected by anisotropies. The effects of the in-plane anisotropy and the role of the applied field were examined. We also discussed a simple theoretical model for the angular variation of switching field by using a quasi-classical argument. We used some constants in connection with experimental data which are reported for chromium telluride thin films grown by molecular beam epitaxy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of Intrinsic and Magnetic Field-Induced Magnetic Anisotropies in Strongly Phase-Separated Manganite Thin Films

Single crystalline thin film (∼ 100 nm) of La{sub 0.18}Pr{sub 0.40}Ca{sub 0.42}MnO{sub 3} is grown on (001) oriented LaAlO{sub 3} substrates and the evolution of anisotropy associated with the supercooling behaviour of the magnetic liquid is studied as a function of temperature and magnetic field. The angle-dependent magnetization measurements ascertain that the easy magnetic axis lies in the plane of the film while the hard axis is along the plane normal. The ratio of the easy and hard axes magnetizations (M{sub ||} and M{sub ⊥}) measured at 10 K, viz., M{sub ||}/M{sub ⊥} (10 K) = 2.6, confirms the strongly anisotropic nature of the film. The easy axis ferromagnetic (FM) transition temperature (T{sub C}) is smaller than that along the hard axis. The giant hysteresis in FCC–FCW M–T, which manifests the magnetic liquid behaviour of the strongly phase-separated manganites is appreciably narrowed along the hard axis. The strain glass state is also less dominant along the easy axis. The analysis of the M–H data brings out that the easy axis remanence (M{sub r||}) shows a nonlinear temperature dependence, while the one corresponding to the hard axis (M{sub r⊥}) shows a nearly linear behaviour. The coercivity (H{sub C}) follows a law of the type H{sub C}(T)=H{sub C}(0)(1−AT{sup b}). The value of exponent b ∼ 0.5 for single-domain particles, but in the present case, the best fit to the experimental data yields the exponent b ≈ 0.25 for both H{sub C||} and H{sub C⊥}. The smaller value of the exponent is attributed to the non-canonical nature of the ferromagnetic state and the associated strongly phase-separated nature of the LPCMO thin film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of RF Power on Structural, Magnetic, and Optical Properties of CoFe{sub 2}O{sub 4} Thin Films

The thin films of CoFe{sub 2}O{sub 4} were deposited on glass substrates by radio-frequency (RF) sputtering. The effect of RF power variation from 60–120 W on the structure, magnetic, and optical properties of the as-deposited films and films annealed at 500 °C was studied. The magnetic parameters of the film, i.e., in-plane coercivity (H{sub c}), saturation magnetization (M{sub s}), and remanence (M{sub r}) increase as RF power is increased from 60 to 80 W followed by a decreasing trend with further increase in RF power to 120 W. Annealing of the film significantly improves the magnetic properties. The largest grain size and the best crystallinity of the film are obtained for the film deposited at 80 W of RF power. The thin films exhibited 70–80% optical transmittance. Optical band gap (E{sub g}) depends on the RF power and grain size, and it varies between 2.08 and 2.16 eV for the as-deposited films and between 2.16 and 2.30 eV for the annealed films. The study shows that RF power used for depositing the film has strong effect on the microstructure and properties of the film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evidence of Room Temperature Ferromagnetism in Zn{sub 1−x}Sn{sub x}S Thin Films

Tin (Sn)-doped zinc sulfide (Zn{sub 1−x}Sn{sub x}S) thin films at different tin (Sn) concentrations (= 0.00, 0.02, 0.05, and 0.08) were coated onto Corning 7059 glass substrates using the electron beam evaporation technique. The films were subjected to different characterization techniques to study the physical properties of the thin films. The structural properties of the films were studied using a powder X-ray diffractometer (XRD), and it was found that the films were cubic in structure without any impurity phases. The crystallite size increased with an increase of Sn concentration, and the mean crystallite size was 21 nm. The chemical composition and surface morphology of the films were studied using scanning electron microscopy (FE-SEM) with energy-dispersive analysis of X-rays (EDAX). Optical properties such as transmittance and absorbance were recorded using a diffuse reflectance spectroscope (UV–vis–NIR). All the films exhibited high optical transmittance of 85% in the visible region of the solar spectrum. The band gap of the films was calculated using Tauc’s relation, and it was found that it increased from 3.53 to 3.57 eV with an increase in the Sn doping concentration from x = 0.02 to x = 0.08. The room temperature photoluminescence studies of the films were recorded using a fluorescence spectrophotometer, and it was found that the films exhibited a prominent emission peak at 420 nm. The magnetic properties of the films and glass substrates at room temperature were studied using a vibrating sample magnetometer. From this, it was found that the films were weakly ferromagnetic at room temperature and the strength of magnetization increased with an increase of doping concentration from x = 0.02 to x = 0.05 and decreased at higher doping concentrations (x = 0.08). The films showed high magnetization at x = 0.05. The films at x = 0.05 exhibited the magnetization (M{sub s}), retentivity (M{sub r}), and coercive fields (H{sub c}) 18 × 10{sup − 6} emu/cm{sup 3}, 1.6 × 10{sup − 6} emu/cm{sup 3}, and 91.80 Oe, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

FMR and Magnetic Studies of RF-Sputtered Mn-Zn Ferrite Thin Films

The Manganese–Zinc ferrite (MZF) thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at 10 mTorr of argon gas pressure. The FMR and magnetization measurement were carried out to understand magnetic properties of the as-deposited and annealed MZF films. The resonance field (H{sub r}) of the FMR spectra shifts towards higher magnetic field when angle between applied field and thin film plane is changed from 0 to 90° indicating the existence of uniaxial anisotropy in the film. Whereas, H{sub r} shifts towards lower magnetic field with decrease in temperature of the film. This is due to ferrimagnetic ordering in the films at low temperatures. The magnetization versus field (M-H) plots reveal the soft ferrimagnetic behavior of the films. The post-deposition annealing of the film leads to increase in crystallite size with more uniform film surface and dense columnar growth compared to the as-deposited film. The increase in magnetization and decreases in H{sub r}-values compared to that of as-deposited film are observed for annealed film. The optical band gap of the film is also found to increase with annealing.

36 MATERIALS SCIENCE↗

Easy Controlled Properties of Quaternary FeNiCrCd Thin Films Deposited from a Single dc Magnetron Sputtering Under the Influence of Deposition Rate

The quaternary FeNiCrCd thin films were produced from a single FeNiCrCr source on a commercial flexible polymer substrate using one dc magnetron sputtering technique. For that, a series of the films with a thickness of 50 nm were produced at different deposition rates of 0.02, 0.04, 0.06, and 0.08 nm/s, separately. In this study, as far as concerned, this was the first time that structural and magnetic properties of FeNiCrCd thin films were investigated. According to compositional analysis, the Fe and Cr contents slightly decreased with increasing deposition rate while Ni was almost constant, whereas those of the amount of Cd atoms increased. However, the atomic amounts of Fe and Cd in the films are quite different from those of the source material. The change of the atomic contents in the films from the source may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. For crystal structural analysis, a combination of hexagonal close-packed (hcp) and body-centered cubic (bcc) were observed. The peak intensity of the bcc-dominated planes decreased while the hcp-dominant plane increased since the change in peak intensities is compatible with the compositional analysis with increasing deposition rate. And, the grain sizes decreased gradually from 40.1 to 23.4 nm, with increasing deposition rate from 0.02, to 0.08 nm/s. Also, the film surfaces transformed from a rough to smooth surfaces with decreasing grain sizes as deposition rate increased. For magnetic analysis, the saturation magnetization M{sub s} values decreased as 1030, 773, 730, and 217 emu/cm{sup 3} with increasing deposition rate as 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. In the same manner, the coercivity H{sub c} values were found as 11, 7, 6, and 2 Oe with the deposition rate of 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. The decrease of the H{sub c} may have primarily come from the transformation of rough to smooth surface of the films. It may also be said that the films showed soft magnetic properties due to their low H{sub c} values with increasing deposition rate. Thus, the magnetic properties of the quaternary FeNiCrCd alloy films were seen to be easily improved with the deposition rate parameter for potential use in different industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of bath temperatures on physical and electrical properties of potentiostatically deposited Cu{sub 2}O thin films for heterojunction solar cell applications

In the present work, the influence of bath temperatures on structural, morphological, vibrational, optical, electrical and photo response properties of the electrochemically deposited cuprous oxide (Cu{sub 2}O) thin films on fluorine doped tin oxide substrate is extensively investigated with the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), Micro Raman spectroscopy, photo luminescence (PL) spectroscopy, UV–visible spectroscopy, LCR measurement, Keithley 4200 semiconductor characterization system respectively. XRD patterns reveal that the deposited Cu{sub 2}O films have cubic structure grown along the preferential (111) orientation and the film deposited at 40 °C shows better crystalline nature when compared at 55 and 70 °C. The micro structural properties of films such as crystallite size (D), dislocation density (δ), micro strain (ε) and stacking fault probability (α) were calculated and discussed in detail. SEM displays a well-defined three side pyramid shaped morphology for the film deposited at 40 °C. Micro Raman and PL spectra reveal the film deposited at 40 °C by being better crystalline at a higher acceptor concentration. UV–Visible study shows that the optical energy band gap increases from 2.05 to 2.17 eV with an increase in bath temperature from 40 to 70 °C. The frequency-temperature dependence of impedance analysis shows a higher electrical conductivity for a film deposited at 40 °C compared to other bath temperatures. I-V measurement illustrates a good photoconductivity response for Cu{sub 2}O thin film deposited at 40 °C compared to films deposited at 55 and 70 °C.

36 MATERIALS SCIENCE↗

Influence of fluorine doped CdO thin films by an simplified spray pyrolysis technique using nebulizer

The Cadmium oxide (CdO) and Fluorine (F) doped CdO thin films were effectively synthesized on glass substrates for different F doping concentrations (2, 4, 6, 8 at.%) using nebulized spray pyrolysis technique. The XRD analysis showed that all the films were polycrystalline having cubic structure with (111) preferential orientation. It was seen from the SEM photographs that the doping causes remarkable changes in the surface morphology. EDAX analysis clearly confirmed that the presence of expected elements cadmium, oxygen and fluorine in the final product, in appropriate proportions. The electrical study showed that the minimum resistivity value of 1.9 × 10{sup −4} Ω cm with notable higher values of carrier concentration and mobility was achieved for 6 at.% of CdO:F film. Optical study exhibited that the band gap value of CdO film increases gradually with the increase in F-doping concentration, reaching maximum band gap value of 2.61 eV at 6 at.% and starts decreasing thereafter. Photoluminescence spectra depicted that the intensity of the emission peaks was significantly varied with doping concentrations. The high transparency, wide band gap energy, enhanced electrical properties and light sensitivity had been obtained infer that F-doped CdO thin films which find application in optoelectronic applications. Graphical abstract: .

36 MATERIALS SCIENCE↗

Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations

This paper deals with the 700 keV energetic Carbon (C) ions irradiations induced structrual modification and optical bandgap tunning of cubic (c) AlN thin films. MOCVD grown c-AlN thin film has been exposed to C ions at various ions fluences of 1 × 10{sup 13}, 1 × 10{sup 14} and 1 × 10{sup 15} ions.cm{sup −2}. XRD patterns exhibited that films retain their cubic crystal structure after ions irradiations, indicating their structural stability against irradiation. Full width at half maximum of the XRD peaks remains almost same for pristine and irradiated films. Ions irradiations at fluence of 1 × 10{sup 14} ions/cm{sup 2}, produces compressive stresses as observed from the shifts in (220) orientation peaks. However, its pristine position is restored with a further rise of ions fluence to 1 × 10{sup 15} ions/cm{sup 2}, thereby relieving the induced stresses. Raman spectra also indicated that the stress produced at lower fluence are recovered with further increase of the fluence. The bandgap obtained from UV-visible optical transmission spectra also modulated with ions dose rate and is changed from 5.88 eV (for as grown) to 5.62 eV at maximum fluence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Co doping effect on structural and optical properties of nickel oxide (NiO) thin films via spray pyrolysis

Undoped and cobalt doped nickel oxide thin films (Co:NiO) at different doping concentrations were deposited on a glass substrate at constant substrate temperature by spray pyrolysis. The doping percentage increased from 0 to 10% and the effects of doping content on structural, morphological and optical properties were explored by X-ray diffraction, atomic force microscopy and UV–visible spectroscopy, respectively. X-ray diffraction configurations proved the NiO thin films were polycrystalline in nature having a cubic crystal structure. The regularly used parameters such as crystallite size, micro-strain, dislocation density and texture coefficient are presented from structural data. The average crystallite size is found between 10 and 14 nm with cobalt doping (Co) concentration. The band gap energies were increased with the effect of Co doping concentration in the range between 2.10 and 2.50 eV. The various optical constants as a function of photon energy are modified with Co doping concentration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗