Engineering of the thermodynamic properties of bilayer graphene by atomic plane rotations: the role of the out-of-plane phonons
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phonons, thermal conductivity, thermoelectric, spi↗
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How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?
The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics.
phonons, thermal conductivity, thermoelectric, spi↗
Photoinduced charge transfer in transition metal dichalcogenide heterojunctions – towards next generation energy technologies
Increasing interest in using two-dimensional transition metal dichalcogenides (2D TMDCs) in optical energy conversion technologies creates a demand for improving the yields and lifetimes of photogenerated charge carriers. Despite inherently fast photocarrier decay in neat 2D TMDCs, the unique photophysics in these quantum-confined systems motivates continued effort to control the evolution of photoexcited states and create functional devices. Here, an intriguing strategy to accomplish this goal is to employ TMDCs in heterojunctions with appropriate semiconductors, where energy level offsets drive photoinduced charge transfer (PCT) across material interfaces. PCT in TMDC-based systems can be optimized for many different applications, such as driving free carriers to photocatalytic sites for redox reactions like water splitting, extracting charge to perform work in photovoltaics or photodetectors, and manipulating the spin and momentum valley electronic degrees of freedom for quantum computing systems. Here, we review recent strides in optimizing PCT for such applications through greater fundamental understanding of the photophysics that occurs at TMDC/semiconductor interfaces. After giving an overview of isolated TMDC properties, synthetic methods, and the basics of PCT, we discuss TMDCs in heterojunctions with several classes of materials, including other TMDCs, small molecule semiconductors, polymers, single-walled carbon nanotubes, quantum dots, perovskites, and electrolytes. In addition to highlighting the unique benefits of each materials category, we also identify parallels across common themes, such as the roles of charge-transfer states, spin, electronic coupling, delocalization, interfacial atomic morphology, and the precise design of energy landscapes to direct charge and energy motion. We hope to capture a broad range of the valuable work in this fast-paced field to inspire new research directions for employing PCT in targeted TMDC-based systems.
30 DIRECT ENERGY CONVERSION↗
Using genetic algorithms to discover novel ground-state triplet conjugated polymers
Stable ground-state triplet π-conjugated copolymers have many interesting electronic and optoelectronic properties. However, the large number of potential monomer combinations makes it impractical to synthesize or even just use density functional theory (DFT) to calculate their triplet ground-state stability. Furthermore, we present a genetic algorithm implementation that uses the semi-empirical GFN2-xTB to find ground-state triplet polymer candidates. We find more than 1400 polymer candidates with a triplet ground-state stability of up to 4 eV versus the singlet. Additionally, we explore the properties of the monomers of those candidates in order to understand the design rules which promote the formation of a stable ground-state triplet in π-conjugated polymers.
36 MATERIALS SCIENCE↗
Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG
The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. Finally, with the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Skyrmion creation and annihilation by spin waves
Single skyrmion creation and annihilation by spin waves in a crossbar geometry are theoretically analyzed. A critical spin-wave frequency is required both for the creation and the annihilation of a skyrmion. The minimum frequencies for creation and annihilation are similar, but the optimum frequency for creation is below the critical frequency for skyrmion annihilation. If a skyrmion already exists in the cross bar region, a spin wave below the critical frequency causes the skyrmion to circulate within the central region. A heat assisted creation process reduces the spin-wave frequency and amplitude required for creating a skyrmion. Finally, the effective field resulting from the Dzyaloshinskii-Moriya interaction and the emergent field of the skyrmion acting on the spin wave drive the creation and annihilation processes.
36 MATERIALS SCIENCE↗
Voltage-driven spin-transfer torque in a magnetic particle
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of the particle can be manipulated electronically, in the regime where the critical current for magnetization switching is negligibly weak, which could be due to the reduced particle dimensions. Using master equation simulations to evaluate the effects of spin-orbit anisotropy energy fluctuations on spin-transfer, we obtain reliable reading and writing of the magnetization state of such magnetic particle, and find that the device relies on a critical voltage rather than a critical current. The critical voltage is governed by the spin-orbit energy shifts of discrete levels in the particle. This finding opens a possibility to significantly reduce the power dissipation involved in spin-transfer torque switching, by using very small magnetic particles or molecules.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Polymerization of defect states at dislocation cores in InAs
Dislocations are essentially lines of point defects which can act as recombination centers in semiconductor devices. These point defects do not behave as isolated defects. Their spatial proximity enables them to hybridize into a one-dimensional band, and the distribution of resulting defect-band states is determined by both the position of the band and its dispersion. In the case of glissile 90° partial dislocations in III-V semiconductors, the dislocation core can adopt a variety of different reconstructions. Each of these reconstructions has a different arrangement of point defects, which affects the hybridization into defect bands and their associated dispersion. Here, we illustrate these principles by performing first-principles calculations for InAs and find that some defect levels for InAs dislocations lie outside of the band gap where they cannot act as recombination centers. To provide some insight into the electronic structure of dislocations in ternary alloys, some examples relevant to InGaAs and GaAsP are included.
36 MATERIALS SCIENCE↗
Interface effects in nanometer-thick yttrium iron garnet films studied by magneto-optical spectroscopy
The properties of nanometer-thick yttrium iron garnet (YIG) films are strongly influenced by interfaces. This work employs spectral ellipsometry (SE) and magneto-optic polar Kerr rotation (PKR) to characterize YIG films with thickness, t, from 6 nm to 30 nm grown on Gd 3 Ga 5 O 12 (GGG) substrates oriented parallel to (111) plane. The films display a surface roughness of 0.35 nm or lower. The analysis of the SE data at the photon energies of 1 eV < E < 6.5 eV provided the t and permittivity values. The PKR at 1.3 eV < E < 4.5 eV is reasonably explained with the optical model for the YIG film/GGG substrate system. Even better agreement is achieved by assuming a 1.07-nm-thick layer sandwiched between YIG and GGG that has Fe 3+ sublattice magnetization opposite to that in the YIG volume. This suggests the existence of antiferromagnetic coupling between the Gd 3+ and tetrahedral Fe 3+ .
36 MATERIALS SCIENCE↗
Structural and proximity-induced ferromagnetic properties of topological insulator-magnetic insulator heterostructures
Not Available
36 MATERIALS SCIENCE↗
Exquisite growth control and magnetic properties of yttrium iron garnet thin films
A layer-by-layer epitaxial growth up to 227 atomic layers of ferrimagnetic insulator yttrium iron garnet (YIG) thin films is achieved on (110)-oriented gadolinium gallium garnet substrates using pulsed laser deposition. Atomically smooth terraces are observed on YIG films up to 100 nm in thickness. The root-mean-square roughness is as low as 0.067 nm. The easy-axis lies in the film plane, indicating the dominance of shape anisotropy. For (110)-YIG films, there is well-defined two-fold in-plane anisotropy, with the easiest axis directed along [001]. The Gilbert damping constant is determined to be 1.0 × 10{sup −4} for 100 nm thick films.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Continuous control of spin polarization using a magnetic field
The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance
Here, we study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co 40 Fe 40 B 20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.
42 ENGINEERING↗
Platinum/yttrium iron garnet inverted structures for spin current transport
30-80 nm thick yttrium iron garnet (YIG) films are grown by pulsed laser deposition on a 5 nm thick sputtered Pt atop gadolinium gallium garnet substrate (GGG) (110). Upon post-growth rapid thermal annealing, single crystal YIG(110) emerges as if it were epitaxially grown on GGG(110) despite the presence of the intermediate Pt film. The YIG surface shows atomic steps with the root-mean-square roughness of 0.12 nm on flat terraces. Both Pt/YIG and GGG/Pt interfaces are atomically sharp. The resulting YIG(110) films show clear in-plane uniaxial magnetic anisotropy with a well-defined easy axis along 〈001〉 and a peak-to-peak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz, similar to YIG epitaxially grown on GGG. Both spin Hall magnetoresistance and longitudinal spin Seebeck effects in the inverted bilayers indicate excellent Pt/YIG interface quality.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Wireless current sensing by near field induction from a spin transfer torque nano-oscillator
We demonstrate that spin transfer torque nano-oscillators (STNO) can act as wireless sensors for local current. The STNO acts as a transducer that converts weak direct currents into microwave field oscillations that we detect using an inductive coil. We detect direct currents in the range of 300–700 μA and report them wirelessly to a receiving induction coil at distances exceeding 6.5 mm. This current sensor could find application in chemical and biological sensing and industrial inspection.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes
Here, ultraviolet electroluminescence from Schottky type LED device is demonstrated. The device prototype is based on Schottky junctions formed between Au and the top ends of ZnO nanowire arrays. Rectifying current-voltage characteristics are observed, and three different charge transport mechanisms are discussed in detail. Excitonic electroluminescence at around 380 nm is detected at high forward bias and the linear relationship between intensity and current suggests a LED device performance. The observation of LED signals from the simple Schottky structure provides a potential supplement to the category of ultraviolet LED devices.
36 MATERIALS SCIENCE↗
Prime factorization using magnonic holographic devices
Determining the prime factors of a given number $N$ is a problem that requires super-polynomial time for conventional digital computers. A polynomial-time algorithm was invented by Shor for quantum computers. In this paper, we present experimental data that demonstrate prime factorization using spin-wave interference but without quantum entanglement. Prime factorization includes three major steps. First, a general-type computer calculates the sequence of numbers m k mod($N$), where $N$ is the number to be factorized, m is a randomly chosen positive integer, and k = 1, 2, 3, 4, 5, 6…. Next, the period of the calculated sequence $r$ is determined by exploiting spin-wave interference. Finally, the general-type computer determines the primes based on the obtained $r$. The experiment for period finding was conducted on a six-terminal Y 3 Fe 2 (FeO 4 ) 3 device. We chose number 15 for testing and determined its primes using a sequence of measurements. The obtained experimental data for a micrometer-sized prototype aimed to demonstrate the benefits of using spin-wave devices to solve complex computational problems. Scalability is one of the major strengths inherent in this type of wave-based device, which may provide a route to nanometer-sized logic circuits. We discuss the physical and technological limitations of this approach, which define the maximum size of N and the computational speed. Although this classical approach cannot compete with the quantum algorithm in terms of efficiency, magnonic holographic devices can potentially be used as complementary logic units aimed at speeding up prime factorization for classical computers.
97 MATHEMATICS AND COMPUTING↗
Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers
We present processing and characterization of Nd-doped aluminum nitride (Nd:AlN) polycrystalline ceramics. We compare ceramics with significant segregation of Nd to those exhibiting minimal segregation. Spatially resolved photoluminescence maps reveal a strong correlation between homogeneous Nd doping and spatially homogeneous light emission. The spectroscopically resolved light emission lines show excellent agreement with the expected Nd electronic transitions. Notably, the lines are significantly broadened, producing near IR emission (~1077 nm) with a remarkable ~100 nm bandwidth at room temperature. We attribute the broadened lines to a combination of effects: multiple Nd-sites, anisotropy of AlN and phonon broadening. These broadened, overlapping lines in a media with excellent thermal conductivity have potential for Nd-based, tunable lasers with high average power.
36 MATERIALS SCIENCE↗