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At least 1,747 records · Page 97

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DOE OSTI2014

Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1–20 Ω · cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20–200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 μm is 3–5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 μm is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Epitaxial growth of hexagonal silicon polytypes on sapphire

The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the 9R silicon polytype.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition

Conditions for the pulsed electrochemical deposition of nanostructured zinc oxide arrays with a certain morphology, crystal structure, and optical properties from aqueous electrolytes onto substrates of transparent electrically conducting tin dioxide and on single-crystal silicon wafers with built-in homojunctions are studied in order to develop antireflection coatings for solar cells. It is shown that it is possible to obtain single-layer planar antireflection coatings or arrays of nanorods of this material, both having the form of hexagonal prisms and exhibiting the moth-eye effect.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Low-temperature conductivity in CuGaS{sub 2} single crystals

CuGaS{sub 2} single crystals are grown by the Bridgman-Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100–300 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.

36 MATERIALS SCIENCE↗

DOE OSTI2015

MBE growth of GaP on a Si substrate

It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Surface plasmon polaritons in a composite system of porous silicon and gold

A composite system of silicon quantum dots and gold particles with properties periodically changing along the surface (i.e., a system exhibiting the properties of a diffraction grating) is obtained by a one-step metal-assisted chemical etching. The spectral and angular dependences of the photoresponse for the composite system on single-crystal silicon are studied. The photoresponse peaks were observed, which behavior (the dependence on the parameters of the diffraction grating, wavelength and incidence angles of light) is attributed to the excitation of plasmon-polariton modes at the surface of the composite system with the diffraction grating. At the same time, the obtained values of the wave vectors for these modes are smaller than those calculated for plasmon polaritons excited at the interface between air and metal (gold) diffraction grating.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Electron scattering in the Δ{sub 1} model of the conduction band of germanium single crystals

Electron scattering in the possible Δ{sub 1} models of the conduction band in germanium crystals formed by hydrostatic or uniaxial pressure is investigated. On the basis of the theory of anisotropic scattering, the temperature dependences of the anisotropy parameter of the relaxation times and electron mobility for these models under conditions of scattering at impurity ions, as well as at acoustic and intervalley phonons are obtained. Analysis of the temperature dependences indicates that, in the temperature range of 77–300 K, intervalley scattering becomes substantial. Only for the Δ{sub 1} model formed by uniaxial pressure along the crystallographic direction [100], the electron scattering at intervalley phonons, which correspond to the g transitions, is minor with respect to scattering at acoustic phonons (the intravalley scattering) and impurity ions.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Effect of copper on the recombination activity of extended defects in silicon

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

36 MATERIALS SCIENCE↗

DOE OSTI2015

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure of these semiconductors to short-term (≤30 s) microwave radiation substantially modifies their impurity and defect structure. The mechanisms of transformation of the defect subsystem of II–VI single crystals upon microwave treatment are discussed. It is shown that the experimentally observed changes are defined by the nonthermal effects of microwave radiation at a power density of 7.5 W cm{sup –2}; at 90 W cm{sup –2}, nonthermal effects are prevailing.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Investigations of nanodimensional Al{sup 2}O{sup 3} films deposited by ion-plasma sputtering onto porous silicon

The purpose of this study is the deposition of nanodimensional Al{sup 2}O{sup 3} films on the surface of nanoporous silicon and also fundamental investigations of the structural, optical, and morphological properties of these materials. Analyzing the results obtained here, it is possible to state that ultrathin nanostructured Al{sup 2}O{sup 3} films can be obtained in the form of threads oriented in one direction and located at a distance of 300–500 nm from each other using ion-plasma sputtering on a layer of porous silicon. Such a mechanism of aluminum-oxide growth is conditioned by the crystallographic orientation of the initial single-crystalline silicon wafer used to fabricate the porous layer. The results of optical spectroscopy show that the Al{sup 2}O{sup 3}/por-Si/Si(111) heterophase structure perfectly transmits electromagnetic radiation in the range of 190–900 nm. The maximum in the dispersion of the refractive index obtained for the Al{sup 2}O{sup 3} film grown on por-Si coincides with the optical-absorption edge for aluminum oxide and is located in the region of ∼5.60 eV. This fact is confirmed by the results of calculations of the optical-absorption spectrum of the Al{sup 2}O{sup 3}/por-Si/Si(lll) heterophase structure. The Al{sup 2}O{sup 3} films formed on the heterophase-structure surface in the form of nanodimensional structured threads can serve as channels of optical conduction and can be rather efficiently introduced into conventional technologies, which are of great importance in microelectronics and optoelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Specific features of the optical and photoelectric properties of nanocrystalline indium oxide

The spectral dependences of the absorption coefficient and steady-state photoconductivity and the relaxation of photoconductivity (after illumination switch off) in nanocrystalline indium oxide (In{sub 2}O{sub 3}) films synthesized by the sol–gel method are investigated. The mean nanocrystal size varies from 7–8 to 39–41 nm, depending on the sample-preparation conditions. The optical band gap of nanocrystalline In{sub 2}O{sub 3} is determined as a result of combined analysis of the optical absorption spectra and the spectral dependence of the photoconductivity. The optical band gap in nanocrystalline In{sub 2}O{sub 3} is found to be much narrower than the optical band gap in In{sub 2}O{sub 3} single crystals. The photoconductivity decay kinetics in nanocrystalline In{sub 2}O{sub 3} in air, vacuum, and argon at room temperature are studied. A model explaining the observed photoconductivity decay is proposed.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Magnetic and electrical properties of Fe{sub 0.9}Ag{sub 0.1}In{sub 2.3}S{sub 4.4} single crystals

The magnetic and electrical properties of the Fe{sub 0.9}Ag{sub 0.1}In{sub 2.3}S{sub 4.4} single crystal are studied in the temperature range 4–300 K and in magnetic fields of 0–14 T. It is established that the sample under study is paramagnetic. In the ground state, short-range-order correlations typical of a spin glass with a freezing temperature of 10 K are detected. The magnetic ordering temperature is 15 K. The sample is a semiconductor with a resistivity of 3.5 kΩ cm at room temperature. For the Fe{sub 0.9}Ag{sub 0.1}In{sub 2.3}S{sub 4.4} single crystal, a mechanism for the formation of magnetic and electrical states is suggested.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al{sub 2}O{sub 3} quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al{sub 2}O{sub 3} single crystal. It is established that, in the band gap of an Al{sub 2}O{sub 3} nanoparticle, a band of exciton states (formed from spatially separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al{sub 2}O{sub 3} nanoparticles at room temperature from the absorption spectrum of the nanosystem.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

The fabrication of photodetectors for the wavelength range of communications λ = 1.3–1.55 µm on the basis of Ge/Si(001) heterostructures with thick (∼0.5 µm) Ge layers grown by the hot-wire technique at reduced growth temperatures (350°C) is reported. The single-crystal Ga layers are distinguished by a low density of threading dislocations (∼10{sup 5} cm{sup –2}). The photodetectors exhibit a rather high quantum efficiency (∼0.05 at λ = 1.5 µm and 300 K) at moderate reverse saturation current densities (∼10{sup –2} A cm{sup –2}). Thus, it is shown that the hot-wire technique offers promise for the formation of integrated photodetectors for the wavelength range of communications, especially in the case of limitations on the conditions of heat treatments.

36 MATERIALS SCIENCE↗

DOE OSTI2016

On the specific electrophysical properties of n-InSe single crystals

The temperature dependences of physical parameters (the conductivity and the Hall constant) are experimentally investigated for pure indium-selenide (n-InSe) crystals and those lightly doped with rareearth elements (gadolinium, holmium, and dysprosium). It is established that the obtained results depend on the origin of the samples under investigation and prove to be contradictory for different samples. The obtained experimental results are treated taking into account the presence of chaotic large-scale defects and drift barriers caused by them in these samples.

36 MATERIALS SCIENCE↗