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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Defect accommodation in off-stoichiometric (SrTiO 3 ) n SrO Ruddlesden–Popper superlattices studied with positron annihilation spectroscopy

he low dielectric loss underlying the record performance of strained (SrTiO 3 ) n SrO Ruddlesden–Popper films as tunable microwave dielectrics was postulated to arise from (SrO) 2 faults accommodating local non-stoichiometric defects. Here, we explore the effect of non-stoichiometry on (SrTiO 3 ) n SrO using positron annihilation lifetime spectroscopy on a composition series of 300 nm thick n = 6 (Sr 1+δ TiO 3 ) n SrO thin films. These films show titanium-site vacancies across the stoichiometry series, with evidence that TiO x vacancy complexes dominate. Little change in defect populations is observed across the series, indicating the ability of Ruddlesden–Popper phases to accommodate ± 5% off-stoichiometry. This ability for defect accommodation is corroborated by scanning transmission electron microscopy with electron energy loss spectroscopy.

Physics↗
DOE OSTI2020

First-principles study of intrinsic point defects and Xe impurities in uranium monocarbide

Based on density functional theory (DFT) calculations, we perform an extensive investigation of intrinsic point defects and Xe impurities in uranium monocarbide (UC). The DFT calculations involve both the conventional generalized gradient approximation (GGA) and the GGA+U approach with the Hubbard parametric term (U), using up to 5×5×5 supercells. GGA calculations for the formation energy of intrinsic defects demonstrate the significant effect of using larger supercells than in previous studies. Results confirm that the ⟨111⟩ and ⟨100⟩ dumbbell interstitials are the most stable interstitial configurations for U and C, respectively. The interstitial mechanisms are favored for self-diffusion of both uranium and carbon and diffusion of Xe under equilibrium conditions. Calculations also reveal that the Xe substitutional defect at the C lattice site tends to adopt an off-site configuration, which can be interpreted as a Xe interstitial–C vacancy complex. We also utilize GGA+U to assess the impact of effective U parameter (Ueff) on the results. Moreover, we introduce a method to estimate the carbon chemical potential by fitting the phase diagram composition data and propose a selection Ueff=1.25 eV based on the experimental Xe diffusion activation energy. With this approach, GGA+U calculations reproduce the available experimental data for the formation energy of the carbon Frenkel pair and can explain the stepwise recovery of intrinsic properties and burst Xe release behavior in UC observed in annealing experiments.

Huang, Gui-Yang (ORCID:0000000301447376)↗
DOE OSTI2022

Role of morphology in defect formation and photo-induced carrier instabilities in amorphous indium oxide

Ab initio molecular dynamics liquid-quench simulations and hybrid density functional calculations are performed to model the effects of room-temperature atomic fluctuations and photo-illumination on the structural and electronic properties of amorphous sub-stoichiometric In 2 O 2.96 . A large configurational ensemble is employed to reliably predict the distribution of localized defects as well as their response to the thermal and light activation. The results reveal that the illumination effects on the carrier concentration are greater in amorphous configurations with shorter In–O bond length and reduced polyhedral sharing as compared to the structures with a more uniform morphology. Further, the obtained correlation between the photo-induced carrier density and the reduction in the number of fully coordinated In-atoms implies that metal oxides with a significant fraction of crystalline/amorphous interfaces would show a more pronounced response to illumination. Photo-excitation also produces In–O 2 –In defects that have not been previously found in sub-stoichiometric amorphous oxides; these defects are responsible for carrier instabilities due to overdoping.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Effect of surface defects on damage and failure of dynamically driven cylindrical shells

Here, in this work, expanding cylinder experiments are performed using a gas gun on the aluminum 6061 alloy to understand the dynamic deformation and failure behavior of this material in the presence of surface defects in the form of scratches. The experiments are then modeled with the modified Tepla (for tensile plasticity) model, which is equipped with the damage yield function of Gurson [“Continuum theory of ductile rupture by void nucleation and growth: Part I—Yield criteria and flow rules for porous ductile media,” (1977)] and Tvergaard and Needleman [Acta Metall. 32(1), 157–169 (1984)], over-stress viscosity [F. Addessio and J. Johnson, J. Appl. Phys. 74(3), 1640–1648 (1993)], and the underlying viscoplastic model of Preston et al. [J. Appl. Phys. 93(1), 211–220 (2003)] (Preston–Tonks–Wallace model) for the dense material. The Tepla model parameters were calibrated using the Bayesian approach against experimentally measured free-surface velocity data obtained from plate impact experiments on the aluminum 6061 alloy. The evolution of radial expansion and shapes of the deformed cylinder from the simulations on a pristine cylinder wall and a cylinder wall with a longitudinal surface defect shows excellent agreement with the corresponding experimental results. Finally, the role of surface defect size and cylinder wall geometry on the dynamic strength of the cylinder wall was also investigated through a series of simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Deep learning-enabled probing of irradiation-induced defects in time-series micrographs

Modeling time-series data with convolutional neural networks (CNNs) requires building a model to learn in batches as opposed to training sequentially. Coupling CNNs with in situ or operando techniques opens the possibility of accurately segmenting dynamic reactions and mass transport phenomena to understand how materials behave under the conditions in which they are used. In this article, in situ ion irradiation transmission electron microscopy (TEM) images are used as inputs into the CNN to assess the defect generation rate, defect cluster density, and saturation of defects. We then use the output segmentation maps to correlate with conventional TEM micrographs to assess the model’s ability to detail nanoscale interactions. Next, we discuss the implications of preprocessing and hyperparameters on model variability, accuracy when expanded to other datasets, and the role of regularization when controlling model variance. Ultimately, we eliminate human bias when extrapolating physical metrics, speed up analysis time, decouple reactions that happen at 100 ms intervals, and deploy models that are both accurate and transferable to similar experiments.

Burns, Kory (ORCID:0000000158019909)↗
DOE OSTI2024

Modeling ablator defects as a source of mix in high-performance implosions at the National Ignition Facility

Recent indirect drive inertial confinement fusion implosions on the National Ignition Facility (NIF) [Spaeth et al., Fusion Sci. Technol. 69, 25 (2016)] have crossed the threshold of ignition. However, performance has been variable due to several factors. One of the leading sources of variability is the quality of the high-density carbon (HDC) shells used as ablators in these experiments. In particular, these shells can have a number of defects that have been found to correlate with the appearance of ablator mix into the hot spot and a degradation in nuclear yield. These defects include pits on the ablator surface, voids in the ablator bulk, high-Z debris from the Hohlraum wall that adheres to the capsule surface, and finally the inherent granular micro-structure of the crystalline HDC itself. This paper summarizes high-resolution modeling of each of these mix sources in two recent high-performance NIF implosion experiments. The simulated impact from a range of individual capsule defects is found to be broadly consistent with the trends seen in experiment, lending credence to the modeling results and the details of the mixing process that they reveal. Interestingly, modeling of the micro-structure inherent to HDC shows that this perturbation source results in considerable mixing of the deuterium–tritium fuel with ablator material during the implosion. The reduction in fuel compression from this mix results in an approximately factor of two reduction in neutron yield in current implosions and emphasizes the importance of mitigating this significant performance degradation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗
DOE OSTI2025

Electronic mobility, doping, and defects in epitaxial BaZrS 3 chalcogenide perovskite thin films

We present the electronic transport properties of BaZrS 3 thin films grown epitaxially by gas-source molecular beam epitaxy. We observe n-type behavior in all samples, with carrier concentration ranging from 4 × 10 18 to 4 × 10 20 cm −3 at room temperature (RT). We observe a champion RT Hall mobility of 11.1 cm 2 V −1 s −1 , which is competitive with established thin-film photovoltaic absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and antiphase boundary concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary ion mass spectrometry measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors (V ⋅ S or V ⋅⋅ S ), which are converted into neutral oxygen defects (O$^{×}_{S}$) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.

Van Sambeek, Jack [Massachusetts Institute of Tech↗
DOE OSTI2015

Cyclic deformation leads to defect healing and strengthening of small-volume metal crystals

Significance Producing strong and defect-free materials is an important objective in developing many new materials. Thermal treatments aimed at defect elimination often lead to undesirable levels of strength and other properties. Although monotonic loading can reduce or even eliminate dislocations in submicroscale single crystals, such “mechanical healing” causes severe plastic deformation and significant shape changes. Inspired by observing an easier pullout of a partly buried object after shaking it first, we demonstrate that “cyclic healing” of the small-volume single crystals can indeed be achieved through repeated low-amplitude straining. The cyclic healing method points to versatile avenues for tailoring the defect structure and strengthening of nanoscale metal crystals without the need for thermal annealing or severe plastic deformation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Nanomechanics of cellulose deformation reveal molecular defects that facilitate natural deconstruction

Significance Cellulose plays an important role as a structural polymer for natural material applications and as a source of sugars for production of renewable fuels and chemicals. Previously, kink defects have been observed in isolated cellulose nanofibrils. In this work, we provide direct evidence that these defects can be induced by mechanical deformation and are often accompanied by molecular-level bond breakages that are exploited by cellulase enzymes as initiation sites for processive hydrolysis. This relationship between mechanical stress and molecular defect formation has likely played a role in the evolution of both plants and natural cellulolytic enzyme systems. An improved understanding of these principles provides insight for the development of advanced cellulose utilization and processing technologies.

09 BIOMASS FUELS↗
DOE OSTI2016

Modeling of interdendritic porosity defects in an integrated computational materials engineering approach for metal casting

Modeling and simulation of multiphysical phenomena needs to be considered in the design and optimization of mechanical properties of cast components in order to accelerate the introduction of new cast alloys. The data on casting defects, including microstructure features, is crucial for evaluating the final performance-related properties of the component. Here in this paper, the required models for the prediction of interdendritic casting defects, such as microporosity and hot tears, are reviewed. The data on calculated solidification shrinkage is presented and its effects on microporosity levels discussed. Numerical simulation results for microporosity are presented for A356, 356 and 319 aluminum alloys using ProCAST TM software. The calculated pressure drop of the interdendritic liquid was observed to be quite significant and the regions of high-pressure drop can be used as an indicator of the severity of interdendritic microporosity defects.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Correlating optical damage threshold with intrinsic defect populations in fused silica as a function of heat treatment temperature

Here, chemical vapor deposition (CVD) is used for the production of fused silica optics in high-power laser applications. However, relatively little is known about the ultraviolet laser damage threshold of CVD films and how they relate to intrinsic defects produced during deposition. We present here a study relating structural and electronic defects in CVD films to 355 nm pulsed-laser damage threshold as a function of post-deposition annealing temperature (T HT ). Plasma-enhanced CVD based on SiH 4 /N 2 O under oxygen-rich conditions was used to deposit 1.5, 3.1 and 6.4 µm thick films on etched SiO2 substrates. Rapid annealing was performed using a scanned CO2 laser beam up to T HT ~ 2100 K. The films were then characterized using x-ray photoemission spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. A gradual transition in the damage threshold of annealed films was observed for T HT values up to 1600 K, correlating with a decrease in non-bridging silanol and oxygen deficient centres. An additional sharp transition in damage threshold also occurs at ~1850 K indicating substrate annealing. Based on our results, a mechanism for damage-related defect annealing is proposed, and the potential of using high-T HT CVD SiO 2 to mitigate optical damage is also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Mirror-smooth surfaces and repair of defects in superconducting RF cavities by mechanical polishing

Mechanical techniques for polishing the inside surface of niobium superconducting radio-frequency (SRF) cavities have been systematically explored. By extending known techniques to fine polishing, mirror-like finishes were produced, with <15 nm RMS (root mean square) roughness over 1 mm2 scan area. This is an order of magnitude less than the typical roughness produced by the electropolishing of niobium cavities. The extended mechanical polishing (XMP) process was applied to several SRF cavities which exhibited equator defects that caused quench at <20 MV m-1 and were not improved by further electropolishing. Cavity optical inspection equipment verified the complete removal of these defects, and minor acid processing, which dulled the mirror finish, restored performance of the defective cells to the high gradients and quality factors measured for adjacent cells when tested with other harmonics. This innate repair feature of XMP could be used to increase manufacturing yield. Excellent superconducting properties resulted after initial process optimization, with quality factor Q of 3 × 1010 and accelerating gradient of 43 MV m-1 being attained for a single-cell TESLA cavity, which are both close to practical limits. Several repaired nine-cell cavities also attained Q > 8 × 109 at 35 MV m-1, which is the specification for the International Linear Collider. Future optimization of the process and pathways for eliminating requirements for acid processing are also discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Catalytic reduction of carbon dioxide to methanol over defect-laden hexagonal boron nitride: insights into reaction mechanisms

Abstract We present a density functional theory-based mechanistic understanding of CO 2 hydrogenation to value-added products on a nitrogen-vacancy (V N ) defect in hexagonal boron nitride ( dh -BN). Activation occurs through back-donation to the π * orbitals of CO 2 from the frontier orbitals (defect state) of the h- BN sheet that are localized near a nitrogen-vacancy. Subsequent hydrogenation to methanol (CH 3 OH) and formic acid (HCOOH) proceed through vacancy-facilitated co-adsorption of hydrogen and CO 2 . More importantly, our reaction pathway analyses complimented by microkinetic modeling indicate that dh -BN is potentially a low-temperature, selective catalyst for CO 2 reduction to methanol. Our findings are in agreement with experiments conducted in a mechanical reactor that show high selectivity towards methanol formation for CO 2 hydrogenation on defect induced h- BN.

Jiang, Tao (ORCID:0000000304197288)↗
DOE OSTI2024

Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

Abstract In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.

Engineering↗
DOE OSTI2026

Silicon pinhole strip defects and their impact on ATLAS Inner Tracker HV current measurement

In preparation for the High-Luminsity LHC (HL-LHC) [1], the ATLAS detector will undergo major detector upgrades, including the replacement of the current Inner Detector with the new all-silicon Inner Tracker (ITk) [2]. The ITk consists of a pixel detector close to the beamline surrounded by a large-area strip detector. During detector production, the electrical properties of silicon sensors and readout electronics must be characterized through a series of quality control (QC) and quality assurance tests. These tests ensure any defect is captured at the earliest possible stage. One such defect, callled a pinhole, occurs when the strip implant and the metal readout electrode are shorted through the intermediary dielectric layer. Notably, the introduction of pinholes during module assembly and pinhole effects on completed modules, especially on leakage current measurement circuitry, have never been studied. In this paper, we investigate the effect of such connections on the sensor leakage current measurements of completed modules and introduce new ways to locate pinholed strips. Here, with minor modifications to testing procedures, such defects are shown not to impede module testing or performance.

FOS: Physical sciences↗
DOE OSTI2023

In-Situ Transmission Electron Microscopy Study of the Evolution of Extended Defects in Oxide Nuclear Fuels

In-situ transmission electron microscopy (TEM) with simulated extreme environments is an effective tool for understanding and tracking microstructural changes down to the atomic scale. The objective of this research is to study the effect of temperature on the evolution of extended defects in ThO2 and UO2. Here, we present in-situ TEM isochronal thermal annealing experiments using a micro-electro-mechanical-system (MEMS)-based heating holder. ThO2 and UO2 single crystal specimens were grown inside an inert silver ampoule using hydrothermal synthesis. Both samples were irradiated using 2 MeV protons at 600oC up to 0.1 dpa at Texas A&M University’s Accelerator Laboratory. Fig. 1a shows a weak-beam dark field TEM image of ThO2 after irradiation, indicating the presence of faulted 1/3 <111> type dislocation loops. This presentation will discuss the effect of annealing temperature (600oC, 800oC, 1000oC, 1100oC, etc.) on dislocation loop density, size and distribution, loop nature (interstitial/vacancies) and Burgers vector, as well as the formation of voids in both ThO2 and UO2. This work will also discuss the interaction between defects during annealing. The in-situ TEM annealing cycle is shown in Fig 1b. This research significantly improves the understanding of defect behavior in oxide nuclear fuels with temperature and will aid computational modeling efforts. This work was supported as part of the Center for Thermal Energy Transport under Irradiation (TETI) Energy Frontier Research Center, funded by the U.S. Department of Energy Office of Science.

36 MATERIALS SCIENCE↗