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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Microscopy of Electrostatic Field Effect in Novel Quantum Materials (Final Report)

In this DOE Early Career project “Microscopy of Electrostatic Field Effect in Novel Quantum Materials”, the PI’s group explored the nanoscale electronic properties when charge carriers are electrostatically modulated in functional materials. Using a microwave impedance microscope (MIM), the team probed the spatial evolution of local conductivity in various field-effect transistors (FETs) ranging from traditional metal-oxide-semiconductor FETs, sketched oxide-interface FETs, to ferroelectric FETs and electric double-layer transistors (EDLTs). Specifically, the work has led to a deep understanding on the electrical inhomogeneity and conductive edge channels in atomically thin transition metal dichalcogenides and their heterostructures, which is of fundamental importance for their applications in electronics and photonics. The unique sub-surface imaging capability also enables the first-time report of ferroelectric field effect on Ge substrates due to the polarization switching of an epitaxial BaTiO 3 layer, as well as the visualization of sketched nanostructures in the LaAlO 3 /SrTiO 3 interface. Using a cryogenic MIM, the local channel conductance in ion-gel-gated oxide EDLTs has been successfully imaged, resolving a major challenge in the EDLT research to study electronic fluctuations in the devices. Finally, a new tuning-fork-based MIM has been developed to perform quantitative conductivity imaging on back-gated FETs. The research supported by this DOE grant is significant for understanding the nanoscale uniformity in technologically important materials towards energy applications.

2D materials↗
NASA NTRS1996

Spray Combustion Modeling with VOF and Finite-Rate Chemistry

A spray atomization and combustion model is developed based on the volume-of-fluid (VOF) transport equation with finite-rate chemistry model. The gas-liquid interface mass, momentum and energy conservation laws are modeled by continuum surface force mechanisms. A new solution method is developed such that the present VOF model can be applied for all-speed range flows. The objectives of the present study are: (1) to develop and verify the fractional volume-of-fluid (VOF) cell partitioning approach into a predictor-corrector algorithm to deal with multiphase (gas-liquid) free surface flow problems; (2) to implement the developed unified algorithm in a general purpose computational fluid dynamics (CFD) code, Finite Difference Navier-Stokes (FDNS), with droplet dynamics and finite-rate chemistry models; and (3) to demonstrate the effectiveness of the present approach by simulating benchmark problems of jet breakup/spray atomization and combustion. Modeling multiphase fluid flows poses a significant challenge because a required boundary must be applied to a transient, irregular surface that is discontinuous, and the flow regimes considered can range from incompressible to highspeed compressible flows. The flow-process modeling is further complicated by surface tension, interfacial heat and mass transfer, spray formation and turbulence, and their interactions. The major contribution of the present method is to combine the novel feature of the Volume of Fluid (VOF) method and the Eulerian/Lagrangian method into a unified algorithm for efficient noniterative, time-accurate calculations of multiphase free surface flows valid at all speeds. The proposed method reformulated the VOF equation to strongly couple two distinct phases (liquid and gas), and tracks droplets on a Lagrangian frame when spray model is required, using a unified predictor-corrector technique to account for the non-linear linkages through the convective contributions of VOF. The discontinuities within the sharp interface will be modeled as a volume force to avoid stiffness. Formations of droplets, tracking of droplet dynamics and modeling of the droplet breakup/evaporation, are handled through the same unified predictor-corrector procedure. Thus the new algorithm is non-iterative and is flexible for general geometries with arbitrarily complex topology in free surfaces. The FDNS finite-difference Navier-Stokes code is employed as the baseline of the current development. Benchmark test cases of shear coaxial LOX/H2 liquid jet with atomization/combustion and impinging jet test cases are investigated in the present work. Preliminary data comparisons show good qualitative agreement between data and the present analysis. It is indicative from these results that the present method has great potential to become a general engineering design analysis and diagnostics tool for problems involving spray combustion.

Chen, Yen-Sen↗
DOE OSTI2016

Enabling Quality Interfaces with Mask-Free Approach to Selective Growth of MoS 2 /Graphene Stacked Structures

The mask-free patterning technique is employed to fabricate arrays of MoS2 and WS2 structures on silicon and graphene substrates with quality interfaces. By depositing precursor inks with the AFM cantilevers and subsequent heat treatment in the CVD furnace, it is demonstrated that MoS2 and WS2 structures can be formed on graphene surfaces at predefined device architectures.

2D atomic crystals↗
DOE OSTI2018

Towards nanoscale electrical measurements in liquid by advanced KPFM techniques: a review

Fundamental mechanisms of energy storage, corrosion, sensing, and multiple biological functionalities are directly coupled to electrical processes and ionic dynamics at solid–liquid interfaces. In many cases, these processes are spatially inhomogeneous taking place at grain boundaries, step edges, point defects, ion channels, etc and possess complex time and voltage dependent dynamics. This necessitates time-resolved and real-space probing of these phenomena. In this review, we discuss the applications of force-sensitive voltage modulated scanning probe microscopy (SPM) for probing electrical phenomena at solid–liquid interfaces. We first describe the working principles behind electrostatic and Kelvin probe force microscopies (EFM & KPFM) at the gas–solid interface, review the state of the art in advanced KPFM methods and developments to (i) overcome limitations of classical KPFM, (ii) expand the information accessible from KPFM, and (iii) extend KPFM operation to liquid environments. We briefly discuss the theoretical framework of electrical double layer (EDL) forces and dynamics, the implications and breakdown of classical EDL models for highly charged interfaces or under high ion concentrations, and describe recent modifications of the classical EDL theory relevant for understanding nanoscale electrical measurements at the solid–liquid interface. We further review the latest achievements in mapping surface charge, dielectric constants, and electrodynamic and electrochemical processes in liquids. Lastly, we outline the key challenges and opportunities that exist in the field of nanoscale electrical measurements in liquid as well as providing a roadmap for the future development of liquid KPFM.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electrical conduction mechanism and improved multiferroic properties of NFO/ (Pb{sub 0.50}Sr{sub 0.50}) TiO{sub 3} bilayer nanostructure composite thin film

Multiferroic 2-2 type layered NFO/ (Pb{sub 0.50}Sr{sub 0.50}) TiO{sub 3} composite thin film on Pt/TiO{sub 2}/Si substrate was prepared by novel metallo-Organic process using spin coating technique. The structural and surface morphology were confirmed by X-Ray diffraction (XRD) atomic force microscope (AFM). Significantly improved ferroelectric properties (P{sub s} ∼ 8.69, P{sub r} ∼ 3.19 µC/cm{sup 2} and E{sub c} ∼ 419kV/cm) and magnetic properties (Ms), (M{sub r}) and (H{sub c}) is (104emu/cc, 0.8emu/cc and 25Oe.) were observed at room temperature. Our observation provides an effective way to manipulate the conduction behavior to understand the leakage current density of multiferroic composites film at the interface. Poole–Frankel tunneling conduction mechanism dominates the leakage current of films in the relatively high electric filed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

DLTS analysis of amphoteric interface defects in high-TiO{sub 2} MOS structures prepared by sol-gel spin-coating

High-κ TiO{sub 2} thin films have been fabricated from a facile, combined sol – gel spin – coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO{sub 2} with a small grain size of 18 nm. The refractive index ‘n’ quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 Å. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO{sub 2} were studied by capacitance – voltage (C – V) and deep level transient spectroscopy (DLTS). The flat – band voltage (V{sub FB}) and the density of slow interface states estimated are – 0.9, – 0.44 V and 5.24×10{sup 10}, 1.03×10{sup 11} cm{sup −2}; for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross – sections measured by DLTS are E{sub V} + 0.30, E{sub C} – 0.21 eV; 8.73×10{sup 11}, 6.41×10{sup 11} eV{sup −1} cm{sup −2} and 5.8×10{sup −23}, 8.11×10{sup −23} cm{sup 2} for the NMOS and PMOS structures, respectively. A low value of interface state density in both P- and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Ultra-low contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

The ability to form reliable, low-resistance Ohmic contacts is of critical importance to the ongoing development of oxide electronics. Most metals form Schottky barriers when deposited on oxide surfaces. Ohmic contacts rarely occur, and the associated contact resistances are not particularly low. Little is known at an atomistic level about what leads to a good Ohmic contact on a wide-gap oxide. Here we describe the structure of a simple, yet exceptionally low-contact resistance Ohmic metal on an important oxide semiconductor -- epitaxial Cr on Nb-doped SrTiO3(001). Heteroepitaxial growth is accompanied by Cr diffusion into the STO and occupation of interstitial sites within the first few atomic planes. Interstitial Cr is ionized and the resulting electrons occupy the STO conduction band, resulting in effective metallization near the interface.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2017

Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells

Through detailed device characterization using cross-sectional Kelvin probe force microscopy (KPFM) and trap density of states measurements, we identify that the J-V hysteresis seen in planar organic-inorganic hybrid perovskite solar cells (PVSCs) using SnO 2 electron selective layers (ESLs) synthesized by low-temperature plasma-enhanced atomic-layer deposition (PEALD) method is mainly caused by the imbalanced charge transportation between the ESL/perovskite and the hole selective layer/perovskite interfaces. We find that this charge transportation imbalance is originated from the poor electrical conductivity of the low-temperature PEALD SnO 2 ESL. We further discover that a facile low-temperature thermal annealing of SnO 2 ESLs can effectively improve the electrical mobility of low-temperature PEALD SnO 2 ESLs and consequently significantly reduce or even eliminate the J-V hysteresis. With the reduction of J-V hysteresis and optimization of deposition process, planar PVSCs with stabilized output powers up to 20.3% are achieved. Here, the results of this study provide insights for further enhancing the efficiency of planar PVSCs.

14 SOLAR ENERGY↗
DOE OSTI2025

Effects of high-pressure hydrogen exposure on filler-elastomer adhesion

Elastomers are known to gain enhanced mechanical properties through compounding with nanosized filler particles such as silica or carbon black. Filler dispersion and filler-polymer interfacial strength are key contributing factors to this improvement. The interfacial strength is critical to part lifetime in pressurized gas sealing applications such as O-rings, where weak binding between the filler particle and polymer matrix can lead to internal void structures. With the aim to build a fundamental understanding of precursors to pressurized hydrogen-induced failure in elastomers, we use all-atom molecular dynamics simulations to study the impact of hydrogen oversaturation on filler-polymer interaction strength. We systematically study the interface between a commonly used elastomer, ethylene-propylene-diene monomer (EPDM) and silica by varying gas concentration, crosslink density, and surface chemistry. Our simulations predict that decompression leads to a localization of excess gas near the interface. In conclusion, we demonstrate that this localized gas can weaken interfacial adhesion and quantify the interaction using thermodynamic approaches.

EPDM↗
DOE OSTI2020

Real-time interface investigation on degradation mechanism of organic light-emitting diode by in-operando X-ray spectroscopies

Understanding the chemical evolution at the interface of organic light-emitting diodes (OLEDs) under working conditions is critical for addressing device failure and further improving performance. In this work, an in-operando approach was developed employing synchrotron-based X-ray absorption spectroscopy (XAS) to investigate the electronic structures and chemical degradation mechanisms of a model tris(8-hydroxyquinoline) aluminum (Alq 3 )-based OLED device under working condition. The results identify that Mg atoms from the electrode migrate into the Alq 3 organic layer under a potential bias and replace Al atom sites, forming the unstable Mgq 3 species which lead to device degradation. Here, the findings from the classic and simple model device elucidate the degradation mechanisms occurred at the interface of OLED devices, which may facilitate the development of more efficient and stable OLED devices with complex structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Simplifying computational workflows with the Multiscale Atomic Zeolite Simulation Environment (MAZE)

Zeolites, an important class of 3-dimensional nanoporous materials, have been widely explored for a variety of applications including gas storage, separations, and catalysis. As the properties of these aluminosilicate materials depend on a number of factors (e.g., framework topology, Si/Al ratio, extra-framework cations etc.), detailed experiments (e.g., catalytic properties, adsorption capacities etc.) are often limited to only a handful of materials. Computational methods have played an important role in (1) providing molecular level insights to rationalize experimental observations, and (2) screening large libraries of zeolites to identify promising candidates for experimental synthesis and validation. Different levels of theory and computational chemistry codes are necessary to describe the range of relevant phenomena such as adsorption (e.g., grand canonical Monte Carlo), diffusion (e.g., molecular dynamics), and chemical reactions (e.g., density functional theory). Manipulation of atomic structures, handling of input files, and developing robust workflows becomes quite cumbersome. To mitigate these challenges, we describe the development of the Multiscale Atomic Zeolite Simulation Environment (MAZE) – a Python package that simplifies zeolite-specific calculation workflows by providing a user-friendly interface for systematically manipulating zeolite structures

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Modeling Framework to Predict Melting Dynamics at Microstructural Defects in TNT-HMX High Explosive Composites

Many high explosive (HE) formulations are composite materials whose microstructure is understood to impact functional characteristics. Interfaces are known to mediate the formation of hot spots that control their safety and initiation. Here, to study such processes at molecular scales, we developed all-atom force fields (FFs) for Octol, a prototypical HE formulation comprised of TNT (2,4,6-trinitrotoluene) and HMX (octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine). We extended a FF for TNT and recasted it in a form that can be readily combined with a well-established FF for HMX. The resulting FF was extensively validated against experimental results and density functional theory calculations. We applied the new combined TNT-HMX FF to predict and rank surface and interface energies, which indicate that there is an energetic driver for coarsening of microstructural grains in TNT-HMX composites. Finally, we assess the impact of several microstructural environments on the dynamic melting of TNT crystal under ultrafast thermal loading. We find that both free surfaces and planar material interfaces are effective nucleation points for TNT melting. However, MD simulations show that TNT crystal is prone to superheating by at least 50 K on subnanosecond time scales and that the degree of superheating is inversely correlated with surface and interface energy. The modeling framework presented here will enable future studies on hot spot formation processes in accident scenarios that are governed by strong coupling between microstructural interfaces, material mechanics, momentum and energy transport, phase transitions, and chemistry.

36 MATERIALS SCIENCE↗
DOE OSTI2026

KTaO 3 -Based Supercurrent Diode

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and inversion symmetry in the device. Here we use conductive atomic force microscope (c-AFM) lithography to pattern reconfigurable superconducting weak links (WLs) at the LaAlO 3 /KTaO 3 (LAO/KTO) interface. By deliberately engineering the WL geometry at the nanoscale, we realize SDE in these devices in the presence of modest out-of-plane magnetic fields. The SDE polarity can be reversed by simply changing the WL position, and the rectification efficiency reaches up to 13% under optimal magnetic field conditions. Time-dependent Ginzburg–Landau simulations reveal that the observed SDE originates from asymmetric vortex motion in the inversion-symmetry-breaking device geometry. This demonstration of SDE in the LAO/KTO system establishes a versatile platform for investigating and engineering vortex dynamics, forming the basis for engineered quantum circuit elements.

C-AFM lithography↗
DOE OSTI2014

Atomic-Scale Characterization of Oxide Thin Films Gated by Ionic Liquid

Ionic liquids (ILs) have been considered for use in electrostatic gating in complex oxide systems. Understanding the ionic liquid/oxide interface, and any bias-induced electrochemical degradation, is critical for the interpretation of transport phenomena. The integrity of the interface between ionic liquid 1-ethyl-3-methylimidazolium hexafluorophosphate and La 1/3 Sr 2/3 FeO 3 under various biasing conditions was examined by analytical transmission electron microscopy, and we report film degradation in the form of an irreversible chemical reaction regardless of the applied bias. This results in an intermixing region of 4–6 nm at the IL/oxide interface. Electron energy loss spectroscopy shows La and Fe migration into the ionic liquid, resulting in secondary phase formation under negative bias. Our approach can be extended to other ionic liquid/oxide systems in order to better understand the electrochemical stability window of these device structures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Kinetics of the Topochemical Transformation of (PbSe) m (TiSe 2 ) n (SnSe 2 ) m (TiSe 2 ) n to (Pb 0.5 Sn 0.5 Se) m (TiSe 2 ) n

Solid-state reaction kinetics on atomic length scales have not been heavily investigated due to the long times, high reaction temperatures, and small reaction volumes at interfaces in solid-state reactions. All of these conditions present significant analytical challenges in following reaction pathways. Herein we use in situ and ex situ X-ray diffraction, in situ X-ray reflectivity, high-angle annular dark field scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy to investigate the mechanistic pathways for the formation of a layered (Pb 0.5 Sn 0.5 Se) 1+δ (TiSe 2 ) m heterostructure, where m is the varying number of TiSe 2 layers in the repeating structure. Thin film precursors were vapor deposited as elemental-modulated layers into an artificial superlattice with Pb and Sn in independent layers, creating a repeating unit with twice the size of the final structure. At low temperatures, the precursor undergoes only a crystallization event to form an intermediate (SnSe 2 ) 1+γ (TiSe 2 ) m (PbSe) 1+δ (TiSe 2 ) m superstructure. At higher temperatures, this superstructure transforms into a (Pb 0.5 Sn 0.5 Se) 1+δ (TiSe 2 ) m alloyed structure. The rate of decay of superlattice reflections of the (SnSe 2 ) 1+γ (TiSe 2 ) m (PbSe) 1+δ (TiSe 2 ) m superstructure was used as the indicator of the progress of the reaction. Here, we show that increasing the number of TiSe 2 layers does not decrease the rate at which the SnSe 2 and PbSe layers alloy, suggesting that at these temperatures it is reduction of the SnSe 2 to SnSe and Se that is rate limiting in the formation of the alloy and not the associated diffusion of Sn and Pb through the TiSe 2 layers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗