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At least 1,729 records · Page 96

Influence of Ag doping concentration on structural and optical properties of CdS thin film

This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electron transport and defect structure in highly conducting reactively sputtered ultrathin tin oxide films

Electrical conduction behavior of ultrathin (5–110 nm) SnO{sub 2} films reactively sputtered at 150–400 °C substrate temperatures is presented. The surface roughness studies revealed that the films with lower thickness were smoother (≤0.6 nm). Stoichiometry/defect structure of the films obtained from X-ray photoelectron spectroscopy data and electron mobility are found to be dependent on film thickness and substrate temperature. The observed increase in conductivity of semi-metallic films with decrease in film thickness is attributed to changes in defect structure and surface roughness. Highest value of conductivity of about 715 Ω{sup −1} cm{sup −1} is obtained for 5 nm thick films deposited at 300 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

This study examined the electrical performance of bilayer channel InGaZnO:H/InGaZnO thin-film transistors (TFTs). The field-effect mobility and bias stress stability of the InGaZnO device were improved by inserting the hydrogenated InGaZnO ultrathin layer compared to the pure InGaZnO single channel layer device. As a consequence, a high field-effect mobility of 55.3 cm{sup 2}/V s, a high on/off current ratio of 10{sup 8}, a threshold voltage of 0.7 V, and a small sub-threshold swing of 0.18 V/decade have been achieved. The X-ray photoelectron spectroscopy and low-frequency noise analysis suggest that these desirable properties should be attributed to the ultrathin InGaZnO:H layer, which could provide suitable carrier concentration and reduce the average trap density near the channel and insulator layer interface. Meanwhile, the channel conductance of the bilayer device is controlled by thick InGaZnO layer through formation barrier energy for electron transport at the interface of InGaZnO:H and InGaZnO layer. These improved electrical properties have represented a great step towards the achievement of transparent, high performances, and low-cost metal oxide TFTs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Grove, C. A.↗

Solvothermal synthesis and characterization of highly monodisperse organically functionalized vanadium oxide nanocrystals for thermochromic applications

Highlights: • Vanadium oxide nanocrystals is synthesized via an improved solvothermal method. • Vanadium oxide nanocrystals possess a structure of distorted paramontroseite VO{sub 2}(P). • Thermally annealed nanocrystal thin films exhibit good thermochromic properties. - Abstract: We report on the synthesis and characterization of highly monodisperse organically functionalized vanadium oxide (VO{sub x}) nanocrystals with a size of 7–10 nm. We show that how these nanocrystals can be prepared by an improved solvothermal reaction and confirm their composition and structure through various materials characterization techniques. Our results revealed that VO{sub x} nanocrystals have a crystalline structure almost identical to that of paramontroseite VO{sub 2}(P) and the majority of vanadium is in oxidation state of V(IV). VO{sub x} nanocrystal films can be readily prepared via a spin coating technique. Once thermally annealed at ∼350 °C under an air/N{sub 2} flow, the films exhibited good thermochromic properties (luminous transmittance (T{sub lum}) ≈49–66%, infrared switching efficiency (ΔT{sub 2000nm}) ≈28–43%, and solar modulating ability (ΔT{sub sol}) ≈7.4–10.7%), corresponding to a phase transition between monoclinic VO{sub 2}(M) and rutile VO{sub 2}(R).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Defect-dependent carrier transport behavior of polymer:ZnO composites/electrodeposited CdS/indium tin oxide devices

Currents through the poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) and ZnO nanoparticles (PEDOT:PSS:ZnO)/CdS/indium tin oxide (ITO) hetero-structures are studied. The authors introduced the electrodeposition technique with sulfide treatment to improve the film quality of CdS. It is shown that sulfide treatment leads to a reduction in the number of donor-like defects (that is, sulfur vacancies and cadmium interstitials) in the CdS films, which leads to the conversion of carrier transport behavior from Poole-Frenkel emission to thermionic emission-diffusion for PEDOT:PSS:ZnO/CdS/ITO devices. A correlation is identified for providing a guide to control the current transport behavior of PEDOT:PSS:ZnO/CdS/ITO devices.

36 MATERIALS SCIENCE↗

Amorphous Films of Ternary Zinc and Tin Oxides for Transparent Electronics

Amorphous films of two varieties of zinc stannate (ZnSnO{sub 3} and Zn{sub 2}SnO{sub 4}) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO{sub 2} in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO{sub 2}. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕ{sub B} = 0.52 eV) and low shunt resistances (R{sub SH} < 500 Ω·cm{sup 2})

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma

The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.

36 MATERIALS SCIENCE↗

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Brown, Ari D.↗

Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10{sup −6} is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanisms of Water-Stimulated Mg 2+ Intercalation in Vanadium Oxide: Toward the Development of Hydrated Vanadium Oxide Cathodes for Mg Batteries

As lithium-ion batteries approach their theoretical limits for energy density, magnesium-ion batteries are emerging as a promising next-generation energy storage technology. However, progress in magnesium-ion battery research has been stymied by a lack of available high capacity cathode materials that can reversibly insert magnesium ions. Vanadium Oxide (V 2 O 5 ) has emerged as one of the more promising candidate cathode materials, owing to its high theoretical capacity, facile synthesis methods, and relatively high operating voltage. This review focuses on the outlook of hydrated V 2 O 5 structures as a high capacity cathode material for magnesium-ion batteries. In general, V 2 O 5 structures exhibit poor experimental capacity for magnesium-ion insertion due to sluggish magnesium-ion insertion kinetics and poor electronic conductivity. However, several decades ago, it was discovered that the addition of water to organic electrolytes significantly improves magnesium-ion insertion into V 2 O 5 . This review clarifies the various mechanisms that have been used to explain this observation, from charge shielding to proton insertion, and offers an alternative explanation that examines the possible role of structural hydroxyl groups on the V 2 O 5 surface. While the mechanism still needs to be further studied, this discovery fueled new research into V 2 O 5 electrodes that incorporate water directly as a structural element. The most promising of these hydrated V 2 O 5 materials, many of which incorporate conductive additives, nanostructured architectures, and thin film morphologies, are discussed. Ultimately, however, these hydrated V 2 O 5 structures still face a significant barrier to potential applications in magnesium-ion batteries. During full cell electrochemical cycling, these hydrated structures tend to leach water into the electrolyte and passivate the surface of the magnesium anode, leading to poor cycle life and low capacity retention. Recently, some promising strides have been made to remedy this problem, including the use of artificial solid electrolyte interphase layers as an anode protection scheme, but a call to action for more anode protection strategies that are compatible with trace water and magnesium metal is required.

25 ENERGY STORAGE↗

Ion beam irradiation as a tool to improve the ionic conductivity in solid polymer electrolyte systems

Solid polymer electrolytes (SPEs) have potential applications in solid state electronic and energy devices. The optimum conductivity of SPEs required for such applications is about 10{sup −1} – 10{sup −3} Scm{sup −1}, which is hard to achieve in these systems. It is observed that ionic conductivity of SPEs continuously increase with increasing concentration of inorganic salt in the host polymer. However, there is a critical concentration of the salt beyond which the conductivity of SPEs decreases due to the formation of ion pairs. In the present study, solid polymer thin films based on poly (ethylene oxide) (PEO) complexed with NaBr salt with different concentrations have been prepared and the concentration at which ion pair formation occurs in PEO{sub x}NaBr is identified. The microstructure of the SPE with highest ionic conductivity is modified by irradiating it with low energy O{sup +1} ion (100 keV) of different fluencies. It is observed that the ionic conductivity of irradiated SPEs increases by one order in magnitude. The increase in ionic conductivity may be attributed to the enhanced segmental motion of the polymer chains due to radiation induced micro structural modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Overall Water Splitting with Room-Temperature Synthesized NiFe Oxyfluoride Nanoporous Films

Freestanding and lightweight thin-films were rationally designed to serve as robust electrodes for renewable energy applications. A facile and scalable nanomanufacturing process was developed to fabricate these transformative thin-film electrodes (iron group mixed oxides) that exhibit a nanoporous structure and controllable composition. More specifically, electrodeposition and anodic treatments were employed to produce freestanding and lightweight metal oxides nanoporous layers (NPL). These NPL can be directly used as flexible and additive-free electrodes for renewable energy generation (water splitting) and storage (supercapacitor) applications without requiring binders and current collector and other additives. Significantly enhanced electrochemical performance was achieved due to the unique merits of the NPL: i) highly porous structure considerably increases the electrode/electrolyte interface, which facilitate electrochemical reactions; ii) NPL substantially increase the number of active sites that are favorable in electrochemical reactions; iii) residual metal network within the NPL forms a conductive framework, drastically improving electrode strength, flexibility and conductivity.

36 MATERIALS SCIENCE↗

Technique for forming ITO films with a controlled refractive index

A new method for fabricating transparent conducting coatings based on indium-tin oxide (ITO) with a controlled refractive index is proposed. This method implies the successive deposition of material by electron-beam evaporation and magnetron sputtering. Sputtered coatings with different densities (and, correspondingly, different refractive indices) can be obtained by varying the ratio of the mass fractions of material deposited by different methods. As an example, films with effective refractive indices of 1.2, 1.4, and 1.7 in the wavelength range of 440–460 nm are fabricated. Two-layer ITO coatings with controlled refractive indices of the layers are also formed by the proposed method. Thus, multilayer transparent conducting coatings with desired optical parameters can be produced.

36 MATERIALS SCIENCE↗

Micro structural studies of PVA doped with metal oxide nanocomposites films

Nanostructured PVA polymer composites are of rapidly growing interest because of their sized-coupled properties. The present article deals with both ZnO and WO{sub 3} embedded in a polyvinyl alcohol (PVA) matrix using a solvent casting method. These films were characterized using FTIR, XRD, and SEM techniques. The FTIR spectra of the doped PVA shows shift in the bands, which can be understood on the basis of intra/inter molecular hydrogen bonding with the adjacent OH group of PVA. The phase homogeneity and morphology of the polymer composites have been analyzed using scanning electron microscope (SEM). The crystal structure and crystallinity of polymer nanocomposites were studied by X-ray diffraction technique (XRD). Thus due to the interaction of dopant and complex formation, the structural repositioning takes place and crystallinity of the nanocomposites decreases.

36 MATERIALS SCIENCE↗