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nanofabrication Capability of Spins in Diamond using Top-Down Ion Implantation.
Abstract not provided.
Strategies for Single-Point Diamond Machining a Large Format Germanium Blazed Immersion Grating
Abstract not provided
Technique for diamond machining large ZnSe grisms for the Rapid Infrared/Imager Spectrograph (RIMAS)
Abstract not provided
Diamond field emitter array cathodes and possibilities of employing additive manufacturing for dielectric laser accelerating structures
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Piezoresistive boron doped diamond nanowire
A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
Sub-surface single ion detection in diamond: A path for deterministic color center creation.
Abstract not provided.
Single ion detection in diamond: A path for deterministic color center creation.
Abstract not provided.
Sensitivity of chemical vapor deposition diamonds to DD and DT neutrons at OMEGA and the National Ignition Facility a)
Abstract not provided
Nanofabrication Capability of Color Centers in Diamond using Top-Down Ion Implantation.
Abstract not provided.
Piezoresistive boron doped diamond nanowire
A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
Direct Write Nanofabrication for Quantum Computing in Silicon and Color Centers in Diamond.
Abstract not provided.
Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.
Abstract not provided.
Top-down Direct Write Nanofabrication of Donors in Silicon and Defect Centers in Diamond.
Abstract not provided.
Deterministic Fabrication of Diamond Color Centers for Engineered Quantum Devices.
Abstract not provided.