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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,729 records · Page 96
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Fast electromigration crack in nanoscale aluminum film

The current-induced breakage of 20 nm thin aluminum layers deposited onto capacitor grade polypropylene (PP) films is experimentally studied. Biexponential current pulses of different amplitude (10–15 A) and duration (0.1–1 μs) were applied to the samples. Breakage occurred after fast development of electromigrating ∼200 nm-wide cracks with initial propagation velocity of ∼1 m/s under a high current density of ∼10{sup 12 }A/m{sup 2}. The cracks stopped when their lengths reached 250–450 μm. This behavior is explained by the balance of electromigration and stress-induced atomic fluxes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Divertor impurity injection using high voltage arcs for impurity transport studies on the Mega Amp Spherical Tokamak

The operation of next-generation fusion reactors will be significantly affected by impurity transport in the scrape-off layer (SOL). Current modelling efforts are restricted by a lack of detailed data on impurity transport in the SOL. In order to address this, a carbon injector has been designed and installed on the Mega Amp Spherical Tokamak (MAST). The injector creates short lived carbon plumes originating at the MAST divertor lasting less than 50 μs. High voltage capacitor banks are used to create a discharge across concentric carbon electrodes located in a probe mounted on the Divertor Science Facility in the MAST lower divertor. This results in a very short plume duration allowing observation of the evolution of the plume and precise localisation of the plume relative to the X-point on MAST. The emission from the carbon plume was imaged using fast visible cameras filtered in order to isolate the carbon II and carbon III emission lines centered around 514 nm and 465 nm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

Large-area graphene film doped with nitrogen is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, and fuel cells among many others. Here, we report on the structural and electronic properties of nitrogen doped trilayer graphene on 4H-SiC (0001) grown under atmospheric pressure. The trilayer nature of the growth is evidenced by scanning transmission electron microscopy. X-ray photoelectron spectroscopy shows the incorporation of 1.2% of nitrogen distributed in pyrrolic-N, and pyridinic-N configurations as well as a graphitic-N contribution. This incorporation causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. Ultraviolet photoelectron spectroscopy shows a decrease of the work function of 0.3 eV due to the N-type doping of the nitrogen atoms in the carbon lattice and the edge defects. A top gate field effect transistor device has been fabricated and exhibits carrier mobilities up to 1300 cm{sup 2}/V s for holes and 850 cm{sup 2}/V s for electrons at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

We provide theoretical and simulation analysis of the small signal response of SiO{sub 2}/AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO{sub 2} interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C{sub p}, and conductance, G{sub p}. C{sub p} -voltage and G{sub p} -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R{sub br} and the effective channel resistance. In particular, in the spill-over region, the drop of C{sub p} with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R{sub br} with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D{sub it}, from the G{sub p}/ω vs. angular frequency ω curves. A peak in G{sub p}/ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G{sub p}/ω vs. ω peak saturates at high D{sub it}, which can lead to underestimation of D{sub it}. Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Charge storage in β-FeSi{sub 2} nanoparticles

We report on the observation of a surprisingly high specific capacitance of β-FeSi{sub 2} nanoparticle layers. Lateral, interdigitated capacitor structures were fabricated on thermally grown silicon dioxide and covered with β-FeSi{sub 2} particles by drop or spin casting. The β-FeSi{sub 2}-nanoparticles, with crystallite sizes in the range of 10–30 nm, were fabricated by gas phase synthesis in a hot wall reactor. Compared to the bare electrodes, the nanoparticle-coated samples exhibit a 3–4 orders of magnitude increased capacitance. Time-resolved current voltage measurements show that for short times (seconds to minutes), the material is capable of storing up to 1 As/g at voltages of around 1 V. The devices are robust and exhibit long-term stability under ambient conditions. The specific capacitance is highest for a saturated relative humidity, while for a relative humidity below 40% the capacitance is almost indistinguishable from a nanoparticle-free reference sample. The devices work without the need of a fluid phase, the charge storing material is abundant and cost effective, and the sample design is easy to fabricate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electrocaloric effect of metal-insulator transition in VO{sub 2}

The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A compact frequency tunable radio frequency phase shifter with patterned Py enabled transmission line

A well designed frequency tunable phase shifter using patterned Py with different thickness has been demonstrated. Phase shifter is implemented with a slow wave coplanar wave guide (CPW)transmission line, where the signal line has alternate short narrow and wide sections. Py is patterned on the top of narrow section for high inductance density, and inter-digital capacitor is implemented in wide section for high capacitance density. Compared with phase shifter using regular CPW, the dimension of the developed phase shifter has been reduced from 14.86 mm to4.70 mm at 2 GHz. Phase shifter based on 100 nm and 200 nm thick patterned Py with the same dimensions (14lm10lm) are implemented and investigated comprehensively. FMR frequency of 3.2 GHz and 3.6 GHz without any external magnetic field has been achieved for100 nm and 200 nm thick Py film, respectively. Thicker Py has increased inductance density from 1067.2 nH/m to 1193.2 nH/m while the center frequency of the phase shifter has been shifted to 1.80 GHz. Frequency tunability of the phase shifter has been also demonstrated withDC current. The phase shifter can provide 90phase shift continuously from 2 GHz to 1.80 GHz with DC current from 0 mA to 150 mA. As a result, the design concept has great potential in design arbitrary tunable RF components such as filters and couplers.

42 ENGINEERING↗
DOE OSTI2015

Resistance switching in polyvinylidene fluoride (PVDF) thin films

Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Organization and identification of solutions in the time-delayed Mackey-Glass model

Multistability in the long term dynamics of the Mackey-Glass (MG) delayed model is analyzed by using an electronic circuit capable of controlling the initial conditions. The system's phase-space is explored by varying the parameter values of two families of initial functions. The evolution equation of the electronic circuit is derived and it is shown that, in the continuous limit, it exactly corresponds to the MG model. In practice, when using a finite set of capacitors, an excellent agreement between the experimental observations and the numerical simulations is manifested. As the delay is increased, different periodic or aperiodic solutions appear. We observe abundant periodic solutions that have the same period but a different alternation of peaks of dissimilar amplitudes and propose a novel symbolic method to classify these solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO{sub 3}

We report on the native defect and microwave properties of 1 μm thick Ba{sub 0.50}Sr{sub 0.50}TiO{sub 3} (BST) films grown on MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities of native point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV and 3.0 eV due to mixed cation V{sub C} and oxygen Vo vacancies. Post growth air anneals reduce these defects with 2.2, 2.65, and 3.0 eV V{sub O} and 2.4 eV V{sub C} intensities decreasing with increasing anneal temperature and by nearly two orders of magnitude after 950 °C annealing. These low-defect annealed BST films exhibited high quality microwave properties, including room temperature interdigitated capacitor tunability of 13% under an electric bias of 40 V and tan δ of 0.002 at 10 GHz and 40 V bias. The results provide a feasible route to grow high quality BST films by MBE through post-air annealing guided by DRCLS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB across a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of SiO{sub 2}/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N{sub 2} ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO{sub 2}/SiC interfaces. Although N{sub 2}-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N{sub 2}-POA was achieved under certain conditions, i.e., thin SiO{sub 2} layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N{sub 2}-POA revealed the same evidence of slow trap passivation and fast trap generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stress induced enhanced polarization in multilayer BiFeO{sub 3}/BaTiO{sub 3} structure with improved energy storage properties

Present work reports the fabrication of a multilayer (5-layer) structure of BiFeO{sub 3}(BFO)/BaTiO{sub 3}(BTO) using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (P{sub r}) and saturation polarization (P{sub s}) for BFO/BTO multilayer structure are found to be 38.14 μC/cm{sup 2} and 71.54 μC/cm{sup 2} respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10{sup −7} A/cm{sup 2} at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm{sup 3} and 59% respectively, suggesting futuristic energy storage applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi 0.9 Sm 0.1 )(Fe 0.97 Hf 0.03 )O 3 /LaNiO 3 heterostructures

In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi 0.9 Sm 0.1 )(Fe 0.97 Hf 0.03 )O 3 / LaNiO 3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (J SC ) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows J SC ~ 32 μA/cm 2 and V OC ~ 0.04 V, which increase to maximum value of J SC ~ 303 (-206) μA/cm 2 and V OC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.

36 MATERIALS SCIENCE↗