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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,729 records · Page 96
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Structure of amorphous materials in the NASICON system Na 1+x Ti 2 Si x P 3−x O 12

Abstract The structure of glasses in the sodium (Na) super-ionic conductor (NASICON) system Na 1 + x Ti 2 Si x P 3 − x O 12 with x = 0.8 and x = 1.0 was explored by combining neutron and high-energy x-ray diffraction with 29 Si, 31 P and 23 Na solid-state nuclear magnetic resonance (NMR) spectroscopy. The 29 Si magic angle spinning (MAS) NMR spectra reveal that the silica component remains fully polymerized in the form of Si 4 units, i.e. the silicon atoms are bound to four bridging oxygen atoms. The 31 P{ 23 Na} rotational echo adiabatic passage double resonance (REAPDOR) NMR data suggest that the 31 P MAS NMR line shape originates from four-coordinated P n units, where n = 1, 2 or 3 is the number of bridging oxygen atoms per phosphorus atom. These sites differ in their 31 P- 23 Na dipolar coupling strengths. The results support an intermediate range order scenario of a phosphosilicate mixed network-former glass in which the phosphate groups selectively attract the Na + modifier ions. Titanium takes a sub-octahedral coordination environment with a mean Ti–O coordination number of 5.17(4) for x = 0.8 and 4.86(4) for x = 1.0. A mismatch between the P–O and Si–O bond lengths of 8% is likely to inhibit the incorporation of silicon into the phosphorus sites of the NASICON crystal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Approximate analytical description of the nonaffine response of amorphous solids

An approximation scheme for model disordered solids is proposed that leads to the fully analytical evaluation of the elastic constants under explicit account of the inhomogeneity (nonaffinity) of the atomic displacements. The theory is in quantitative agreement with simulations for central-force systems and predicts the vanishing of the shear modulus at the isostatic point with the linear law {mu}{approx}(z-2d), where z is the coordination number. The vanishing of rigidity at the isostatic point is shown to be a consequence of the canceling out of positive affine and negative nonaffine terms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Visible to vacuum-UV range optical absorption of oxygen dangling bonds in amorphous SiO{sub 2}

Synthetic silica glass with an optical absorption spectrum dominated by oxygen dangling bonds (nonbridging oxygen hole centers, or NBOHCs) and having negligible (<1%) contribution from the usually copresent Si dangling bonds (E'-centers), was prepared by room temperature ultraviolet photobleaching of high SiOH content (''wet'') silica, irradiated by F{sub 2} laser (7.9 eV) at T = 80 K. This allowed us to obtain the up-to-now controversial optical absorption spectrum of NBOHC in the ultraviolet and vacuum-ultraviolet (UV-VUV) region of the spectrum and to show that it is semicontinuous from 4 to 7.8 eV and cannot be represented by a pair of distinct Gaussian bands. Since NBOHC is one of the main UV-VUV range optical absorbers in silica, its spectral shape provides a tool to disentangle contributions of different color centers to optical losses in this spectral region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Early stage growth of amorphous thin film: Average kinetics, nanoscale dynamics, and pressure dependence

We used the coherent grazing incidence small angle x-ray scattering technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi 2 sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among the measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time parameters to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. Here, a continuum model is applied to simulate the overall behavior with mixed success.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Low Temperature Magnetic Properties of Amorphous Ferromagnetic Fe–Si–B Glass-Coated and Glass Removed Microwire

This work presents results of investigations of low temperature magnetic properties of microwires, fabricated by the Ulitovsky–Taylor method from Fe–Si–B alloy. Influence of the glass coating presence on the magnetostatic properties was shown at room temperature and at 2 K. Conclusions about the peculiarities of temperature dependence of the magnetic moment, measured in low and high magnetic fields (10 Oe–5 kOe) in the temperature range from 2 to 300 K for a sample with partially reduced fabricated processinduced stress by removing the glass, were made.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Enhanced Growth Rate and Silane Utilization in Amorphous Silicon and Nanocrystalline-Silicon Solar Cell Deposition Via Gas Phase Additives

Air Products set out to investigate the impact of additives on the deposition rate of both CSi and Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m 2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

14 SOLAR ENERGY↗