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At least 1,711 records · Page 95

Characterizing vertical upper ocean temperature structures in the European Arctic through unsupervised machine learning

In-situ observations of subsurface ocean temperatures are, in many regions, inconsistently distributed in time and space. These spatio-temporal inconsistencies in the observational network lead to difficulties in utilizing those observations effectively for ocean model evaluation or understanding larger-scale ocean characteristics. Model accuracy of subsurface ocean characteristics is especially important within regions that contain complex ocean structures. One such region is the European Arctic which not only contains several types of water masses with unique characteristics, but also wintertime sea ice coverage and complex bathymetry. This study presents an unsupervised neural networking technique that can be used in combination with traditional ocean model evaluation techniques to provide additional information on the accuracy of modeled vertical ocean temperature profiles. Self-organizing maps is an unsupervised machine learning technique that we apply to approximately twenty thousand Argo and CTD temperature profiles from 2012 to 2020 in the European Arctic to categorize the observed vertical ocean temperature structures in the top 150 m. The observed ocean profile categories, or neurons, defined by the self-organizing map show strong spatial and temporal dependencies. We then use the neuron weights, or the learned temperature profile structure of each neuron, to validate the spatial and temporal variability of modeled vertical temperature structures. This analysis gives us new insights about the model’s capabilities to reproduce specific vertical structures of the top-most ocean layer within different regions and seasons. Mapping modeled ocean temperature profiles onto the neuron-space of the observationally-defined self organized map highlights the potential of this method to advance our understanding of model deficiencies in that region.

54 ENVIRONMENTAL SCIENCES↗

Studies of Low and Intermediate Temperature Oxidation of Propane up to 100 Atm in a Supercritical-Pressure Jet-Stirred Reactor

Here, the low and intermediate temperature oxidation of propane has been investigated by using a novel supercritical pressure jet stirred reactor (SP-JSR) with and without 20% CO 2 additions at fuel lean and rich conditions at 10 and 100 atm and 500–1000 K. The mole fractions of C 3 H 8 , O 2 , CO, CO 2 , CH 2 O, C 2 H 4 , CH 3 CHO, and C 3 H 6 were quantified by using a micro-gas chromatograph (µ-GC). The experiment showed that different from that of 10 atm, at 100 atm only a weak negative temperature coefficient (NTC) behavior was observed because of the significant shift of the intermediate temperature HO 2 chemistry to lower temperature. In addition, at 100 atm, existing models in literatures could successfully capture the onset temperatures of the low and intermediate chemistry, while under-predict the fuel oxidation quantitatively and fail to capture the NTC behavior between 650 and 780 K at both fuel lean and rich conditions. Similar discrepancy was observed in studies of n-butane and dimethyl ether (DME) oxidations in literatures, implying that there existed large uncertainties in hierarchy model development of fuels with low temperature chemistries at extremely high pressures. Reaction pathways and sensitivity analyses showed that RO 2 competing reactions through (P1) RO 2 = QOOH, (P2) RO 2 = C 3 H 6 + HO 2 , (P3) RO 2 + CH 2 O/HO 2 = RO 2 H + HCO / O 2 dominated the low and intermediate temperature chemistries, followed by HO 2 / H 2 O 2 chemistry at 100 atm, which differed from the dominant pathway through QOOH consumption reactions at lower pressures. Especially, P3 is a new pathway of RO 2 consumption at high pressures, which was not observed in importance at low pressures. Special attention should be paid to the accurate computations of n-C 3 H 7 O 2 / i-C 3 H 7 O 2 + CH 2 O and n-C 3 H 7 O 2 / i-C 3 H 7 O 2 + in the P3 pathway and n-C 3 H 7 O 2 / i-C 3 H 7 O 2 decomposition reactions in the P2 pathway at high pressures.

33 ADVANCED PROPULSION SYSTEMS↗

Low-Temperature Oxidation of Ethylene by Ozone in a Jet-Stirred Reactor

Ethylene oxidation initiated by ozone addition (ozonolysis) is carried out in a jet-stirred reactor from 300-1000 K to explore the kinetic pathways relevant to low-temperature oxidation. The temperature dependencies of species’ mole fractions are quantified using molecular-beam mass spectrometry with electron ionization and single-photon ionization employing tunable synchrotron-generated vacuum-ultraviolet radiation. Upon ozone addition, significant ethylene oxidation is found in the low-temperature regime from 300-600 K. Here, we provide new insights into the ethylene ozonolysis reaction network via identification and quantification of previously elusive intermediates by combining experimental photoionization energy scans and ab initio threshold energy calculations for isomer identification. Specifically, the C 2 H 4 +O 3 adduct C 2 H 4 O 3 is identified as a keto-hydroperoxide (hydroperoxy-acetaldehyde, HOOCH 2 CHO) based on the calculated and experimentally observed ionization energy of 9.80 (±0.05) eV. Quantification using a photoionization cross-section of 5 Mb at 10.5 eV results in 5 ppm at atmospheric conditions which decreases monotonically with temperature until 550 K. Other hydroperoxide species, that contribute in larger amounts to the low-temperature oxidation of C 2 H 4 , like H 2 O 2 , CH 3 OOH, and C 2 H 5 OOH, are identified and their temperature-dependent mole fractions are reported. The experimental evidence for additional oxygenated species such as methanol, ketene, acetaldehyde, and hydroxy-acetaldehyde suggest multiple active oxidation routes. This experimental investigation closes the gap between ozonolysis at atmospheric and elevated temperature conditions and provides a database for future modeling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Temperature-Dependent Hole Transfer from Photoexcited Quantum Dots to Molecular Species: Evidence for Trap-Mediated Transfer

The effect of temperature on the rate of hole transfer from photoexcited quantum dots (QDs) is investigated by measuring the driving force dependence of the charge transfer rate for different sized QDs across a range of temperatures from 78 to 300 K. Spherical CdSe/CdS core/shell QDs were used with a series of ferrocene-derived molecular hole acceptors with an 800 meV range in electrochemical potential. Time-resolved photoluminescence measurements and photoluminescence quantum yield measurements in an integrating sphere were both performed from 78 to 300 K to obtain temperature-dependent rates for a series of driving forces as dictated by the nature of the molecular acceptor. For both QD sizes studied and all ligands, the Arrhenius plot of hole transfer exhibited an activated (linear) regime at higher temperatures and a temperature-independent regime at low temperatures. The extracted activation energies in the high-temperature regime were consistent across all ligands for a given QD size. This observation is not consistent with direct charge transfer from the QD valence band to the ferrocene acceptor. Instead, a model in which charge transfer is mediated by a shallow and reversible trap more accurately fits the experimental results. Implications for this observed trap-mediated transfer are discussed including as a strategy to more efficiently extract charge from QDs.

cadmium selenide↗

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. In conclusion, our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for “h-BN on demand” under a frugal thermal budget.

2D h-BN↗

Voltage and temperature effects on low cobalt lithium-ion battery cathode degradation

Degradation of low cobalt lithium-ion cathodes was tested using a full factorial combination of upper cut-off voltage (4.0 V and 4.3 V vs. Li/Li + ) and operating temperature (25 °C and 60 °C). Half-cell batteries were analyzed with electrochemical and microstructural characterization methods. Electrochemical performance was assessed with galvanostatic cycling, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS) supported by distribution of relaxation times (DRT) analysis. Electrode microstructure was characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray absorption near edge structure (XANES) imaging. Higher cut-off voltage cycling shows presence of NiO x formation, a low diffusivity rock-salt phase, in both CV and XRD data. XRD patterns confirmed that the rock-salt phase was beginning to form at the low cut-off voltage at high temperature, but in much lower intensity than at the high cut-off voltage. Higher temperature accelerates degradation processes at both voltages. Degradation factors at high temperature include NiO x formation, cathode material dissolution, and electrolyte decomposition. SEM analysis suggests that supporting phases may isolate and disconnect active material particles reducing capacity retention and battery life cycle. DRT analysis and XANES imaging show that both high temperature samples revealed a NiO x phase based on an increased diffusive impedance and a visible shift in the XANES spectra. The low cut-off voltage, high temperature sample showed a split peak and shift to lower energies indicating early formation of the NiO x phase. The diffusive impedance, which hinders intercalation and deintercalation, is driven by the formation of the NiO x phase. While primarily driven by cut-off voltage, elevated temperature also contributes to this degradation mechanism.

electrochemical impedance spectroscopy↗

Photocurrent response of B{sub 12}As{sub 2} crystals to blue light, and its temperature- dependent electrical characterizations

With the global shortage of {sup 3}He gas, researchers worldwide are looking for alternative materials for detecting neutrons. Among the candidate materials, semiconductors are attractive because of their light weight and ease in handling. Currently, we are looking into the suitability of boron arsenide (B{sub 12}As{sub 2}) for this specific application. As the first step in evaluating the material qualitatively, the photo-response of B{sub 12}As{sub 2} bulk crystals to light with different wavelengths was examined. The crystals showed photocurrent response to a band of 407- and 470- nm blue light. The maximum measured photoresponsivity and the photocurrent density at 0.7 V for 470 nm blue light at room temperature were 0.25 A ⋅ W{sup −1} and 2.47 mA ⋅ cm{sup −2}, respectively. In addition to photo current measurements, the electrical properties as a function of temperature (range: 50-320 K) were measured. Reliable data were obtained for the low-temperature I-V characteristics, the temperature dependence of dark current and its density, and the resistivity variations with temperature in B{sub 12}As{sub 2} bulk crystals. The experiments showed an exponential dependence on temperature for the dark current, current density, and resistivity; these three electrical parameters, respectively, had a variation of a few nA to μA, 1-100 μA ⋅ cm{sup −2} and 7.6x10{sup 5}-7.7x10{sup 3} Ω ⋅ cm, for temperature increasing from 50 K to 320 K. The results from this study reported the first photoresponse and demonstrated that B{sub 12}As{sub 2} is a potential candidate for thermal-neutron detectors.

36 MATERIALS SCIENCE↗

Effect of fast mold surface temperature evolution on iPP part morphology gradients

The control of mold surface temperature is an important factor that affects the sample surface morphology as well as the structural gradients (orientation crystal size, and type) as well as cooling stresses. The frozen layer thickness formed during the filling stage also has a very significant effect on the flow resistance and thus on the resulting pressure drop and flow length in thin wall parts. The possibility to have a hot mold during filling and a quick cooling soon afterward is a significant process enhancement particularly for specialized applications such as micro injection molding and for the reproduction of micro structured surfaces. Up to now, several methods (electromagnetic, infrared, hot vapor fleshing etc,) were tried to achieve fast temperature evolution of the mold. Unfortunately, all these methods require a complex balance between thermal and mechanical problems, equipment cost, energy consumption, safety, molding cycle time and part quality achievable. In this work, a thin electrical resistance was designed and used to generate a fast and confined temperature variation on mold surface (by joule effect). Since the whole temperature evolution can take place in a few seconds, one can couple the advantages of a high surface temperature during filling with the advantages of a low mold temperature, fast cooling and low heating dissipation. Some experiments were performed with a commercial iPP resin. The effects of the surface temperature and of the heating time (under constant electric power) on surface finishing and on the final morphology (thickness and structure of the different layers) are explored and discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Temperature dependent x-ray diffraction and dielectric studies of multiferroic GaFeO{sub 3}

Polycrystalline GaFeO{sub 3} (GFO) samples were synthesized by sol-gel method. The structural and dielectric properties of GaFeO{sub 3} ceramic have been investigated by a combination of XRD and permittivity measurement. The X-ray diffraction spectra shows single phase orthorhombically distorted perovskite structure with Pc2{sub 1}n symmetry over a wide range of temperature 300 K to 600 K, with no evidence of any phase transition. Refined lattice parameters (a, b, c and V) increases with increasing temperature. Temperature dependent dielectric properties were investigated in the frequency range from 100Hz–5MHz. Impedance spectroscopy study on the sample showed that the dielectric constant and ac conductivity with frequency increases on increasing the temperature. Cole-Cole plots suggest that the response from grain is dominant at low temperature whereas grain boundary response overcomes as temperature increases. The relaxation activation energy (calculated from Cole-Cole plots) value is found to be 0.32 eV for the grain boundary. We believe that the oxygen ion vacancies play an important role in conduction processes at higher temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of various sintering temperature on resistivity behaviour and magnetoresistance of La{sub 0.67}Ba{sub 0.33}MnO{sub 3}

A detail work was conducted in order to investigate effect of various sintering temperature on resistivity behavior and its relation with the magneto-resistance effect of La{sub 0.67}Ba{sub 0.33}MnO{sub 3} (LBMO). The LBMO samples were synthesized using solid state reaction. Characterization using X-ray diffraction shows that all LBMO samples have a single phase for each variation. Variation of sintering temperature on the LBMO samples affects its lattice parameters. The resistivity measurement in an absence and under applied magnetic field resulted in a highly significant different values. In one of the sintering temperature variation of LBMO, an increasing resistivity had shown at a low temperature and had reached its maximum value at a specific temperature, and then the resistivity decreases to the lowest value near the room temperature. Similar result observed at higher varieties of sintering temperature but with significant lower maximum resistivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nanosecond-resolved temperature measurements using magnetic nanoparticles

Instantaneous and noninvasive temperature measurements are important when laser thermotherapy or welding is performed. A noninvasive nanosecond-resolved magnetic nanoparticle (MNP) temperature measurement system is described in which a transient change in temperature causes an instantaneous change in the magnetic susceptibilities of the MNPs. These transient changes in the magnetic susceptibilities are rapidly recorded using a wideband magnetic measurement system with an upper frequency limit of 0.5 GHz. The Langevin function (the thermodynamic model characterizing the MNP magnetization process) is used to obtain the temperature information. Experiments showed that the MNP DC magnetization temperature-measurement system can detect a 14.4 ns laser pulse at least. This method of measuring temperature is likely to be useful for acquiring the internal temperatures of materials irradiated with lasers, as well as in other areas of research.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O{sub 3} antiferroelectric bulk ceramics

The dielectric and energy-storage properties of Pb{sub 0.99}Nb{sub 0.02}[(Zr{sub 0.60}Sn{sub 0.40}){sub 0.95}Ti{sub 0.05}]{sub 0.98}O{sub 3} (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T{sub 0}, T{sub C}, T{sub 2} are obtained from the dielectric temperature spectrum. At different temperature regions (below T{sub 0}, between T{sub 0} and T{sub C}, and above T{sub C}), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ∼T{sub 0}. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simultaneous Raman and pyrometric temperature measurements in shock-wave-compressed toluene

We fielded experiments to compare temperatures measured simultaneously by pyrometry and Raman spectroscopy in toluene shocked to 9 GPa. A 0.5 mm thick toluene sample was compressed between sapphire windows by plate impact from a gas gun. As the shock wave reverberated between the windows, the pressure increased stepwise to about 9 GPa. While the sample was near its peak pressure, we measured the Raman spectrum and determined temperature from the ratio of the Stokes and anti-Stokes intensities. Simultaneously, we measured the sample thermal radiance from the C-H vibration bands that occur between 3.2 and 3.6 μm to determine temperature pyrometrically. The pyrometer used a biased indium antimonide detector paired with a custom transimpedance amplifier, a system capable of temperature measurements as low as about 400 K. The Raman measurements gave a temperature of 530 ± 25 K in the bulk volume of toluene. Pyrometry gave a temperature of 496 + 15/-20 K, which is in reasonable agreement with the Raman measurement. Comparisons of this type are necessary to validate pyrometry as a temperature diagnostic in dynamic experiments.

36 MATERIALS SCIENCE↗

Maximal temperature in a simple thermodynamical system

Temperature in a simple thermodynamical system is not limited from above. It is also widely believed that it does not make sense talking about temperatures higher than the Planck temperature in the absence of the full theory of quantum gravity. Here, we demonstrate that there exist a maximal achievable temperature in a system where particles obey the laws of quantum mechanics and classical gravity before we reach the realm of quantum gravity. Namely, if two particles with a given center of mass energy come at the distance shorter than the Schwarzschild diameter apart, according to classical gravity they will form a black hole. It is possible to calculate that a simple thermodynamical system will be dominated by black holes at a critical temperature which is about three times lower than the Planck temperature. That represents the maximal achievable temperature in a simple thermodynamical system.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Modeling electron temperature profiles in the pedestal with simple formulas for ETG transport

Abstract This paper reports on the refinement (building on (Hatch D.R. et al 2022 Phys. Plasmas 29 062501)) and application of simple formulas for electron heat transport from electron temperature gradient (ETG) driven turbulence in the pedestal. The formulas are improved by (1) improving the parameterization for certain key parameters and (2) carefully accounting for the impact of geometry and shaping in the underlying gyrokinetic simulation database. Comparisons with nonlinear gyrokinetic simulations of ETG transport in the MAST pedestal demonstrate the model’s applicability to spherical tokamaks in addition to standard aspect ratio tokamaks. We identify bounds for model applicability: the model is accurate in the steep gradient region, where the ETG turbulence is largely slab-like, but accuracy decreases as the temperature gradient becomes weaker in the pedestal top. We use the formula to model the electron temperature profile in the pedestal for four experimental scenarios while extensively varying input parameters to represent uncertainties. In all cases, the predicted electron temperature profile exhibits extreme sensitivity to separatrix temperature and density, which has implications for core-edge integration. The model reproduces the electron temperature profile for high η e = L n e / L T e scenarios but not for low η e scenarios in which microtearing modes (MTMs) have been identified. We develop a proof-of-concept model for MTM transport and explore the relative roles of ETG and MTM in setting the electron temperature profile.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Soil incubation methods lead to large differences in inferred methane production temperature sensitivity

Abstract Quantifying the temperature sensitivity of methane (CH 4 ) production is crucial for predicting how wetland ecosystems will respond to climate warming. Typically, the temperature sensitivity (often quantified as a Q 10 value) is derived from laboratory incubation studies and then used in biogeochemical models. However, studies report wide variation in incubation-inferred Q 10 values, with a large portion of this variation remaining unexplained. Here we applied observations in a thawing permafrost peatland (Stordalen Mire) and a well-tested process-rich model ( ecosys ) to interpret incubation observations and investigate controls on inferred CH 4 production temperature sensitivity. We developed a field-storage-incubation modeling approach to mimic the full incubation sequence, including field sampling at a particular time in the growing season, refrigerated storage, and laboratory incubation, followed by model evaluation. We found that CH 4 production rates during incubation are regulated by substrate availability and active microbial biomass of key microbial functional groups, which are affected by soil storage duration and temperature. Seasonal variation in substrate availability and active microbial biomass of key microbial functional groups led to strong time-of-sampling impacts on CH 4 production. CH 4 production is higher with less perturbation post-sampling, i.e. shorter storage duration and lower storage temperature. We found a wide range of inferred Q 10 values (1.2–3.5), which we attribute to incubation temperatures, incubation duration, storage duration, and sampling time. We also show that Q 10 values of CH 4 production are controlled by interacting biological, biochemical, and physical processes, which cause the inferred Q 10 values to differ substantially from those of the component processes. Terrestrial ecosystem models that use a constant Q 10 value to represent temperature responses may therefore predict biased soil carbon cycling under future climate scenarios.

54 ENVIRONMENTAL SCIENCES↗

Low temperature CVD growth of WSe 2 enabled by moisture-assisted defects in the precursor powder

Two-dimensional transition metal dichalcogenides (TMDs) have been proposed for a wide variety of applications, such as neuromorphic computing, flexible field effect transistors, photonics, and solar cells, among others. However, for most of these applications to be feasible, it is necessary to integrate these materials with the current existing silicon technology. Although chemical vapor deposition is a promising method for the growth of high-quality and large-area TMD crystals, the high temperatures necessary for the growth make this technique incompatible with the processes used in the semiconductor industry. Herein, we demonstrate the possibility of low-temperature growth of TMDs, using tungsten selenide (WSe 2 ) as a model, by simply using moisture-assisted defective tungsten oxide (WO 3 ) precursor powders during the growth of these materials. Density functional theory calculations reveal the mechanism by which moisture promotes the defect formation on the precursor crystal structure and how it dictates the reduction of the temperature of the growth. The results were compared with the standard growth at high temperatures and with a precursor mixture with alkali salts to show the high quality of the WSe 2 grown at temperatures as low as 550 °C. To conclude, the work improves the understanding of nucleation and growth mechanisms of WSe 2 at low temperatures and provides a useful strategy for the growth of TMDs at temperatures required for the back-end-of-line compatibility with current silicon technology.

2D materials↗

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗