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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,711 records · Page 95
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

In situ study of the electronic structure of polar-to-polar SrTiO 3 /($000\bar1$)ZnO heterointerface

The SrTiO 3 (STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic devices, is a classical system combining functional perovskite oxides and wurtzite-structure semiconductor materials. The electronic structure of the heterointerface often plays a significant role in controlling the functions of novel devices. In this study, the electronic structure was explored using in situ photoemission spectroscopy and X-ray absorption spectroscopy. X-ray diffraction results showed the coexistence of (111) STO and (011) STO orientations for the STO film deposited on the ZnO-($000\bar1$) substrate via pulsed laser deposition. High-resolution transmission electron microscopic results revealed two types of polar interfaces: [$11\bar2$][$10\bar1$](111) STO //[$1\bar210$][$10\bar10$]($000\bar1$) ZnO and [111][$2\bar1\bar1$](011) STO //[$10\bar21$][$10\bar10$]($000\bar1$)ZnO. In situ photoemission spectroscopic results revealed downward band bending and the transformation of the valence states of Ti from 4+ to 3+, with extra electrons transferring to the hybridization states between O 2p and Ti t 2g orbitals at the polar-to-polar STO/ZnO interface. We propose that the polar discontinuity drives the electron transfer to the STO/ZnO interface during the growth process. This study provides insight into the electronic structure of the STO/($000\bar1$)ZnO heterointerface.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Metal-embedded fiber optic sensor packaging and signal demodulation scheme towards high-frequency dynamic measurements in harsh environments

Optical fiber-based sensors are commonly used for industrial monitoring and control processes due to their small size, resistance to electromagnetic interference, and ability to perform a wide variety of high-precision measurements. However, implementing optical fiber sensors in harsh environments is challenging because they are small and fragile. Proper packaging of fiber-optic sensors could extend their use to harsh environments, including at high temperature and under high radiation. Furthermore, conventional fiber optic-based measurement systems often use computationally expensive signal processing algorithms which hinder their use in high-frequency dynamic applications. This work reports on the design of an optical fiber-pressure sensor system based on low-coherence interferometry that uses a metal-embedded optical fiber to provide a robust sensor package. Additionally, a novel phase demodulation scheme is proposed to extract length changes from the deformation of a thin diaphragm within a Fabry–Pérot cavity to measure pressure. The sensor has been tested to ±100 kPa, has a theoretical linear response over a 270 kPa dynamic range (24 dB maximum signal-to-noise ratio), and can resolve pressure transients up to 3910 kPa/s. Sampling at 100 kHz, the present sensor can resolve 2 kPa dynamic pressures at frequencies up to 2 kHz. Faster transients on the order of tens to hundreds of kHz can theoretically be resolved at the expense of decreasing the maximum resolvable amplitude. A methodology for designing a LCI pressure sensor for a given application is outlined based on the limitations imposed by the Nyquist criterion, the diaphragm's resonant frequency, the LCI optoelectronics, and the phase demodulation scheme. The sensor is the first to implement a low-coherence light source and a Fabry–Pérot interferometer designed to provide real-time high-fidelity pressure measurements using a metal-embedded optical fiber. The demonstrated sensor provides a platform for sensing in harsh conditions such as in nuclear and energy applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Photon and carrier management design for nonplanar thin-film copper indium gallium selenide photovoltaics

Nonplanar structured photovoltaic absorber design has potential to achieve high solar cell efficiency with significantly reduced material use. We report optoelectronic simulations that highlight photon and generated carrier management opportunities for improvement of thin film Cu(In x Ga 1-x )Se 2 (CIGS) device performance. Structures realized via either self-assembly or patterning via nanoimprint lithography, and also a combination of both are predicted to exhibit significant increases in short circuit current density and open circuit voltage simultaneously. The structures investigated include: 1) self-assembled nonplanar structures that strongly scatter incident light and enhance carrier generation near regions of high electric potential, 2) lithographicallypatterned embedded periodic dielectric structures, 3) planar dielectric layers that separate the CIGS absorber from the molybdenum back-contact via reduced-area contacts that minimize optical and electronic losses, 4) a combination of these for combined effects. We find that the self-assembled nonplanar CIGS cells with 700 nm planar equivalent thickness, combined with dielectric separation layers yield increases in short circuit current density and open circuit voltage up to 3.4 mA cm -2 and 29 mV, respectively. The absolute efficiency increases from 15.4% to 18.1%, compared to the predicted efficiency for planar CIGS thin film cells of equivalent thickness. The addition of a single layer MgF 2 anti-reflection coating brings the maximum predicted efficiency up to 19.7% for randomly textured devices.

14 SOLAR ENERGY↗
DOE OSTI2019

Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy

We demonstrate solar cell devices grown on 50 mm diameter GaAs substrates by dynamic hydride vapor phase epitaxy (D-HVPE). In contrast to our prior D-HVPE devices, grown at 650 °C in a transport-limited regime, these devices were grown at 700 °C in a kinetically-limited growth regime in which the growth rate uniformity is controlled by thermally-activated surface reactions. These devices exhibit open-circuit voltages up to 1.07 V, nearly identical performance to the devices grown at lower temperature in a different growth regime. We evaluate the uniformity of device performance and find only a 1% variation in absolute, device efficiency across the majority of the wafer in devices without anti-reflection coating. We analyze the GaAs and GaInP thickness uniformity and GaInP compositional uniformity, using high-tresolution x-ray diffraction mapping, and find that any non-uniformity in device efficiency is not related to variations in these structural parameters. We combine three-dimensional computational fluid dynamics modeling of our reactor with a kinetic model for GaAs growth, and use the combined model to predict spatial GaAs growth rate over a 50 mm wafer area. We compare these predictions with experimental data from our D-HVPE reactor and find excellent agreement. We use the model to the gain insight into the specific mechanisms that control GaAs spatial uniformity in the kinetically-limitedgrowth regime. Furthermore, these results suggest a large parameter window for the growth of high-performance optoelectronic devices by D-HVPE, possibly with large area uniformity.

14 SOLAR ENERGY↗
DOE OSTI2021

Radiation Stability of Mixed Tin-Lead Halide Perovskites: Implications for Space Applications

Mixed organic-inorganic halide perovskite solar cells (PSCs) have received considerable attention in recent years for their impressive solar to electrical power efficiency gains and potentially lower material and processing costs for optoelectronic applications. In addition to terrestrial applications, PSCs are of interest to the space power markets for their low cost, low weight, adaptability to flexible architectures, and tolerance to high energy particle irradiation (mainly protons and electrons). Here we investigate the properties of mixed formamidinium-methylammonium tin-lead iodide (FASn)0.6(MAPb)0.4I3 perovskites which lower the lead content as well as the bandgap, making them attractive for the low bandgap absorber material in tandem PSCs. Through current density-voltage (JV) characterization at lower temperatures, majority carrier transport is hindered and a barrier to photogenerated carrier extraction is evident. This is attributed to the thermally induced change of the bandgap of the absorber layer relative to the energy selective contacts in the device. We find that although the architecture used here hinders the performance at temperatures below 225 K, the tolerance to high energy (3.7 MeV) protons is impressive, considerably out-performing commercially available thin-film CIGS. These results suggest further improvements to structural and interface stability as well as lightweight encapsulation could lead to all perovskite flexible tandem arrays deployed for power generation on missions to low Earth orbit, the moon, Mars, and beyond.

perovskite solar cells↗
DOE OSTI2022

To grind or not to grind? The influence of mechanical and thermal treatments on the $\mathrm{Cu/Zn}$ disorder in $\mathrm{Cu}$ 2 $\mathrm{ZnSn}$($\mathrm{S}$ x $\mathrm{Se}$ 1-x ) 4 monograins

We report that Kesterite-type based thin film solar cell technologies are mainly based on polycrystalline absorber layers. A promising low cost alternative technology uses Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) monograins (single crystals of 20–100 μm size) which are fixed in a polymer matrix to form a flexible solar cell. The Cu/Zn disorder is discussed as a possible reason for band tailing causing voltage losses limiting the efficiency of CZTSSe-based devices. The experimental determination of the order parameter Q which is a quantitative measure of Cu/Zn disorder, requires a differentiation between the isoelectronic cations Cu + and Zn 2+ . An in-depth analysis of neutron diffraction data allows the determination of type and concentration of intrinsic point defects including a distinction between Cu and Zn. Neutron diffraction requires large sample volumes, thus monograins offer the unique possibility to correlate structural disorder in CZTSSe with device performance parameters. In this study we tackle the influence of grinding the monograins on stoichiometry deviations, the Cu/Zn disorder as well as intrinsic point defects and optoelectronic properties of CZTSSe monograins. Moreover, an easy methodology based on Raman scattering spectroscopy is proposed for the assessment of Cu/Zn disorder in the CZTSSe compounds.

14 SOLAR ENERGY↗
DOE OSTI2024

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗
DOE OSTI2018

Raman analysis of phonon modes in a short period AlN/GaN superlattice

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E 2 (high) , A 1 (LO) and the E 1 (TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying Al x Ga 1-x N ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A 1 (LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.

42 ENGINEERING↗
DOE OSTI2025

Fabrication of nanoporous doped metal oxide coatings via selective infiltration of a block copolymer template: The case of Al-doped zinc oxide

Conductive nanoporous conformal coatings are important for various applications including touchscreens, displays, and electrochromic windows, though design of such coating with controlled porosity and composition remains challenging. We propose a sequential infiltration synthesis (SIS) method for the fabrication of nanoporous conductive aluminum-doped zinc oxide (AZO) films by infiltrating block copolymer (BCP) templates, specifically polystyrene-block-polyvinyl pyridine (PS-b-P4VP), with diethyl zinc and trimethyl aluminum precursors. Tunability of both porosity and electrical conductivity is achieved by precisely controlling the swelling behavior of the polymer templates and adjusting the number of SIS cycles. Further, our results reveal that porosity levels can reach up to 80 %, with resistivity as low as ~7.83 Ωcm. Using conductive atomic force microscopy (C-AFM) and Hall effect measurements, we show that lower concentrations of aluminum doping relative to zinc (around 1: 17) results in higher conductivity of the AZO films. Additionally, AZO is based on zinc oxide (ZnO) which is cost-efficient, abundant and less toxic than commonly used transparent conductive oxides such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO). Therefore, this novel approach opens new possibilities for creating highly porous, conformal, conductive AZO coatings with customizable porosity and composition, making them ideal candidates for diverse optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Transforming the electronic properties of phosphorene through charge transfer superatomic doping

Phosphorene is a two-dimensional electron poor p-type semiconductor with great promise for applications in electronics and optoelectronics. Here, in this work, we propose how the two most important properties of a semiconductor, the band gap energy and the nature of carriers, can be controlled by changing the dimensionality or through charge transfer doping with metal-chalcogenide superatoms. Our studies on nanoribbons examine how the band gap can be changed by controlling the width of the ribbons. We investigate the stability and properties of bare and H-terminated nanoribbons. We show that small non-passivated ribbons can be metallic while the passivated ribbons show variation in the band gap energy as a function of the width of the ribbon. We next investigate an alternative approach to band gap and carrier control via doping with ligated metal-chalcogenide superatom clusters whose redox properties can be changed by ligand exchange. Our results obtained from deposition of Co 6 S 8 (PH 3 ) 5-n (CO) n clusters on a phosphorene support showed that the band gap energy can be controlled by exchanging the electron donating phosphine ligands with electron withdrawing CO. We then show that by depositing Re 6 Se 8 (PH 3 ) 5-n Cl n clusters, phosphorene can be converted into a p- or n- type semiconductor as the relative composition of ligands is changed. Our studies provide a novel approach to controlling carrier type and band gap in phosphorene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Digital alloy contact layers for perovskite solar cells

Thin film optoelectronic devices commonly require an individual material to perform multiple functions, but the physical properties of single-composition materials often cannot be tuned to optimize these diverse requirements. The electron selective contact layer in perovskite solar cells is a prime example. The material must simultaneously have optimal conduction band alignment, facilitate carrier extraction, prevent recombination, and provide a chemically stable interface with the notoriously volatile perovskite semiconductor. The pulse-by-pulse nature of the thin-film deposition method pulsed laser deposition (PLD) provides an opportunity to form material alloys where the chemical composition is controlled at the nanometer scale. These digital alloys may prove to be a powerful materials class to meet some of the multifunctional needs of thin film devices. Using PLD to make electron transport layers from ZnO and MgZnO targets, we demonstrate in this paper that digital alloy gradients can be tuned to significantly outperform either of the parent materials in perovskite solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Potential for light-induced separation of critical rare-earth elements

Current methods for separations of critical rare earth elements (REEs) require multi-step, waste-generating procedures that lack the ability to selectively separate similarly sized ions, despite such an onerous process. REEs possess unique optoelectronic properties that are often exploited for photomagnetic or photoluminescent applications but could be harnessed to drive element selective separations. Here, recent work exploring photochemical reactions of REE complexes points to promise for investigating alternative separations using photoactive molecules and macromolecular frameworks, highlighting a possible pathway towards realizing practical REE separations to increase the sustainability and longevity of mining and recycling these elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Heteroepitaxy of large grain Ge film on cube-textured Ni(001) foils through CaF 2 buffer layer

Cube-textured Ni(001) foils have been considered as a viable alternative substrate to grow high quality functional films for large area optoelectronic devices. Here in this work, we report the heteroepitaxial growth of CaF 2 (001) films on cube-textured Ni(001) foils at 350-600 degrees C with in-plane orientation of CaF 2 [110]//Ni[100] and CaF 2 [$\bar{1}$10]//Ni[010] with 45 degrees rotation respect to the Ni(001) substrate. Unlike CaF2(111)/Ni(001) films where there exist four independent rotational domains with rotational domain boundaries, CaF 2 (001)/Ni(001) contains no rotational domains or rotational domain boundaries. This makes CaF 2 (001)/Ni(001) films better candidates as templates for the growth of high quality functional semiconductors. Lastly, we also demonstrate that Ge(001) film with no rotational domains and with a grain size of ~ 50 μm similar to that of the Ni substrate can be grown on the CaF 2 (001) buffered Ni substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

14 SOLAR ENERGY↗
DOE OSTI2023

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

In this work, the evolution of structural, optical and optoelectronic properties of coherently strained Ge 0.883 Sn 0.117 /Ge multiple quantum wells (MQWs) grown by molecular beam epitaxy under rapid thermal annealing (RTA) is systematically investigated. The MQW structure remains fully-strained state with RTA at 400 °C or below and disrupts at higher annealing temperatures due to Sn segregation and interdiffusion of Ge and Sn atoms. The GeSn well layers exhibit the strongest absorption in 2.0–2.4 μm after annealing at 400 °C and become transparent above 1.8 μm after RTA at 600 °C or beyond due to serve Sn segregation. Owing to improved crystal quality after RTA at 400 °C, the dark current of the fabricated metal-semiconductor-metal photodetector is effectively lowered by more than two times. Additionally, the responsivities at 1.55 and 2.0 μm are improved by 4.15 and 3.78 folds, respectively, compared to those of the as-grown sample. Here, the results can be an insightful guidance for the development of high-performance short-wave infrared photonic devices based on Sn-containing group-IV low-dimensional structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Characterization of multiterminal tandem photovoltaic devices and their subcell coupling

Three-terminal (3T) and four-terminal (4T) tandem photovoltaic (PV) devices using various materials have been increasingly reported in the literature, but measurement standards are lacking. Here, multiterminal devices measured as functions of two load variables are characterized unambiguously as functions of three device voltages or currents on hexagonal plots. We demonstrate these measurement techniques using two GaInP/GaAs tandem solar cells, with a middle contact between the two subcells, as example 3T devices with both series-connected and reverse-connected subcells. Coupling mechanisms between the subcells are quantified within the context of a simple equivalent optoelectronic circuit. Electrical and optical coupling mechanisms are most clearly revealed using coupled dark measurements. These measurements are sensitive enough to observe very small luminescent coupling from the bottom subcell to the top subcell in the prototype 3T device. Quick simplified measurement techniques are also discussed within the context of the complete characterization.

14 SOLAR ENERGY↗