Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “faults”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,711 records · Page 95
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Learning the Low Frequency Earthquake Activity on the Central San Andreas Fault

Abstract Low frequency earthquakes (LFEs) originating below the central San Andreas Fault are associated with slow‐slip beneath the seismogenic zone within the more ductile portion of the crust. Monitoring efforts over 15 years detected >1 million LFEs. We train a gradient boosted tree model using statistical features describing the seismic waveforms to estimate the hourly LFE event count. The burst‐like LFE behavior is reproduced, while lower amplitudes are predicted during the most active periods. The hourly event counts are up to 18% greater than the catalog. The ability to continuously monitor LFE activity provides insight to when geodetic measurements of slow slip are possible, without the need for developing a computational‐intensive template‐matching catalog. Similar waveform statistical features are found between detecting LFEs and tremors, which provides additional evidence tremors are composed of LFEs. The approach extracts information contained in continuous seismic waveforms that might benefit detecting precursory signals.

58 GEOSCIENCES↗
DOE OSTI2022

Fast and fault-tolerant model predictive control of MMCs under selective harmonic elimination

Selective harmonic elimination (SHE) is a suitable pulse-width modulation (PWM) tech-nique for some applications of modular multilevel converters (MMC) with lower numberof semiconductor submodules (SM). However, SHE can make it difficult to control circu-lating currents in the MMC. Moreover, the MMC is vulnerable to SM switch failures thatreduce its output power magnitude and quality. This paper proposes a fault-tolerant modelpredictive control strategy for MMCs operating with SHE (FT SHE-MPC). The effects ofswitch failure on phase voltage waveforms are studied first. Then, a method is proposedto design the FT SHE waveform to preserve its harmonic performance. Next, the pro-posed FT SHE-MPC is designed to increase the capacitor voltages during an SM failure tomaintain the fundamental component of the faulty phase voltage and control the circulat-ing currents, maintaining balance among line voltages and the output power of the MMC.Additionally, the proposed method offers as much as 60% faster FT transition time and asmuch as 36% lower capacitor voltage ripple. The advantages of the proposed method areverified through offline and real-time simulation studies on a three-phase nine-level MMCin PSCAD/EMTDC software and RTDS.

42 ENGINEERING↗
DOE OSTI2013

Basic criteria for formation of growth twins in high stacking fault energy metals

Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Multi-scale simulation of lithium diffusion in the presence of a 30° partial dislocation and stacking fault in Si

The multi-scale simulation method is employed to investigate how defects affect the performances of Li-ion batteries (LIBs). The stable positions, binding energies and dynamics properties of Li impurity in Si with a 30° partial dislocation and stacking fault (SF) have been studied in comparison with the ideal crystal. It is found that the most table position is the tetrahedral (T{sub d}) site and the diffusion barrier is 0.63 eV in bulk Si. In the 30° partial dislocation core and SF region, the most stable positions are at the centers of the octagons (Oct-A and Oct-B) and pentahedron (site S), respectively. In addition, Li dopant may tend to congregate in these defects. The motion of Li along the dislocation core are carried out by the transport among the Oct-A (Oct-B) sites with the barrier of 1.93 eV (1.12 eV). In the SF region, the diffusion barrier of Li is 0.91 eV. These two types of defects may retard the fast migration of Li dopant that is finally trapped by them. Thus, the presence of the 30° partial dislocation and SF may deactivate the Li impurity and lead to low rate capability of LIB.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stacking faults and interface roughening in semipolar (202{sup ¯}1{sup ¯}) single InGaN quantum wells for long wavelength emission

The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202{sup ¯}1{sup ¯}) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In{sub x}Ga{sub 1−x}N layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stacking fault induced tunnel barrier in platelet graphite nanofiber

A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Compression-induced stacking fault tetrahedra around He bubbles in Al

Classic molecular dynamics methods are used to simulate the uniform compression process of the fcc Al containing He bubbles. The formation of stacking fault tetrahedra (SFTs) during the collapse of He bubbles is found, and their dependence on the initial He bubble size (0.6–6 nm in diameter) is presented. Our simulations indicate only elastic deformation in the samples for the He bubble size not more than 2 nm. Instead, increasing the He bubble size, we detect several small SFTs forming on the surface of the He bubble (3 nm), as well as the two intercrossed SFTs around the He bubbles (4–6 nm). All these SFTs are observed to be stable under further compression, though there may appear some SF networks outside the SFTs (5–6 nm). Furthermore, the dynamic analysis on the SFTs shows that the yield pressure keeps a near-linear increase with the initial He bubble pressure, and the potential energy of Al atoms inside the SFTs is lower than outside because of their gliding inwards. In addition, the pressure increments of 2–6 nm He bubbles with strain are less than that of Al, which just provides the opportunity for the He bubble collapse and the SFTs formation. Note that the current work only focuses on the case that the number ratio between He atoms and Al vacancies is 1:1.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

The stacking faults (SFs) in an AlSb/GaAs (001) interface were investigated using a 300 kV spherical aberration-corrected high-resolution transmission electron microscope (HRTEM). The structure and strain distribution of the single and intersecting (V-shaped) SFs associated with partial dislocations (PDs) were characterized by the [110] HRTEM images and geometric phase analysis, respectively. In the biaxial strain maps ε{sub xx} and ε{sub yy}, a SF can be divided into several sections under different strain states (positive or negative strain values). Furthermore, the strain state for the same section of a SF is in contrast to each other in ε{sub xx} and ε{sub yy} strain maps. The modification in the strain states was attributed to the variation in the local atomic displacements for the SF in the AlSb film on the GaAs substrate recorded in the lattice image. Finally, the single SF was found to be bounded by two 30° PDs. A pair of 30° PDs near the heteroepitaxial interface reacted to form a Lomer-Cottrell sessile dislocation located at the vertices of V-shaped SFs with opposite screw components. The roles of misfit dislocations, such as the PDs, in strain relaxation were also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

We present a combined photoluminescence and transmission electron microscopy study of single GaAs nanowires. Each wire was characterized both in microscopy and spectroscopy, allowing a direct correlation of the optical and the structural properties. By tuning the growth parameters, the nanowire crystal structure is optimized from a highly mixed zincblende–wurtzite structure to pure wurtzite. We find the latter one to be stacking-fault-free over nanowire lengths up to 4.1 μm. We observe the emission of purely wurtzite nanowires to occur only with polarization directions perpendicular to the wurtzite c{sup ^}-axis, as expected from the hexagonal unit cell symmetry. The free exciton recombination energy in the wurtzite structure is 1.518 eV at 5 K with a narrow linewidth of 4 meV. Most notably, these pure wurtzite nanowires display long carrier recombination lifetimes of up to 11.2 ns, exceeding reported lifetimes in bulk GaAs and state-of-the-art 2D GaAs/AlGaAs heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Knowledge-based fault diagnosis system for refuse collection vehicle

The refuse collection vehicle is manufactured by local vehicle body manufacturer. Currently; the company supplied six model of the waste compactor truck to the local authority as well as waste management company. The company is facing difficulty to acquire the knowledge from the expert when the expert is absence. To solve the problem, the knowledge from the expert can be stored in the expert system. The expert system is able to provide necessary support to the company when the expert is not available. The implementation of the process and tool is able to be standardize and more accurate. The knowledge that input to the expert system is based on design guidelines and experience from the expert. This project highlighted another application on knowledge-based system (KBS) approached in trouble shooting of the refuse collection vehicle production process. The main aim of the research is to develop a novel expert fault diagnosis system framework for the refuse collection vehicle.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2016

Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Charge-density based evaluation and prediction of stacking fault energies in Ni alloys from DFT and machine learning

A combination of high strength and high ductility has been observed in multi-principal element alloys due to twin formation attributed to low stacking fault energy (SFE). In the pursuit of low SFE alloys, a key bottleneck is the lack of understanding of the composition–SFE correlations that would guide tailoring SFE via alloy composition. Using density functional theory (DFT), we show that dopant radius, which have been postulated as a key descriptor for SFE in dilute alloys, does not fully explain SFE trends across different host metals. Instead, charge density is a much more central descriptor. It allows us to (1) explain contrasting SFE trends in Ni and Cu host metals due to various dopants in dilute concentrations, (2) explain the large SFE variations observed in the literature even within a given alloy composition due to the nearest neighbor environments in “model” concentrated alloys, and (3) develop a machine learning model that can be used to predict SFEs in multi-elemental alloys. Further, this model opens a possibility to use charge density as a descriptor for predicting SFE in alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tunable stacking fault energies by tailoring local chemical order in CrCoNi medium-entropy alloys

High-entropy alloys (HEAs) are an intriguing new class of metallic materials due to their unique mechanical behavior. Achieving a detailed understanding of structure–property relationships in these materials has been challenged by the compositional disorder that underlies their unique mechanical behavior. Accordingly, in this work, we employ first-principles calculations to investigate the nature of local chemical order and establish its relationship to the intrinsic and extrinsic stacking fault energy (SFE) in CrCoNi medium-entropy solid-solution alloys, whose combination of strength, ductility, and toughness properties approaches the best on record. We find that the average intrinsic and extrinsic SFE are both highly tunable, with values ranging from –43 to 30 mJ•m –2 and from –28 to 66 mJ•m –2 , respectively, as the degree of local chemical order increases. The state of local ordering also strongly correlates with the energy difference between the face-centered cubic ( fcc ) and hexagonal close-packed ( hcp ) phases, which affects the occurrence of transformation-induced plasticity. Here, this theoretical study demonstrates that chemical short-range order is thermodynamically favored in HEAs and can be tuned to affect the mechanical behavior of these alloys. It thus addresses the pressing need to establish robust processing–structure–property relationships to guide the science-based design of new HEAs with targeted mechanical behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Exploring the relation between transonic dislocation glide and stacking fault width in FCC metals

Theory predicts limiting gliding velocities that dislocations cannot overcome. Computational and recent experiments have shown that these limiting velocities are soft barriers and dislocations can reach transonic speeds in high rate plastic deformation scenarios. In this paper we systematically examine the mobility of edge and screw dislocations in several face centered cubic (FCC) metals (Al, Au, Pt, and Ni) in the extreme large-applied-stress regime using molecular dynamics simulations. Our results show that edge dislocations are more likely to move at transonic velocities due to their high mobility and lower limiting velocity than screw dislocations. Importantly, among the considered FCC metals, the dislocation core structure determines the dislocation’s ability to reach transonic velocities. This is likely due to the variation in stacking fault width due to relativistic effects near the limiting velocities.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defining a Use Case for the ADMS Test Bed: Fault Location, Isolation, and Service Restoration with Distributed Energy Resources

Advanced distribution management systems (ADMS) integrate multiple enterprise-level functions into a single platform and offer advanced applications such as fault location, isolation, and service restoration (FLISR), to utilities to meet their operational needs for a modernized grid. These applications need to operate reliably even as distributed energy resource (DER) penetration increases on distribution systems. The ADMS test bed at the National Renewable Energy Laboratory offers utilities and vendors the opportunity to evaluate the performance of such advanced applications on distribution feeders of the future and to understand their potential benefits for a specific utility. This is done through defining use cases that address specific questions. This paper presents the definition of a use case on the performance of a commercially-available FLISR application on a feeder of an electric cooperative with DERs. After experiments are completed, results from this use case will be disseminated to the electric utility and research community to improve understanding of the challenges and benefits that DERs present to ADMS applications and the operation of a modernized grid.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Multiagent-Based Dynamic Voltage Support of Power Converters During Fault Ride-Through

Reference point of applicability (RPA) is a predefined point in a distribution network that performance requirements shall apply. As RPA is not directly controlled by a dedicated distributed energy resource (DER), it requires an aggregate response of multiple DERs over a complex meshed network. Here, this article presents a multiagent-based distributed dynamic voltage support (DDVS) method for coordinated aggregate response of multiple DER units to support RPA voltage profile during and after fault ride-through. DDVS implements a multiagent-based leader target tracking scheme with velocity matching and flock centering features to avoid uncoordinated current injections of cooperative DERs. The DDVS is an event-based approach based on RPA requirements. Two-dimensional voltage support objective is handled: 1) coordinated positive sequence current injection for voltage magnitude boosting and 2) coordinated negative sequence current injection for unbalance voltage mitigation. The results demonstrate that the proposed DDVS algorithm addresses emerging coordinated DVS requirement of DERs.

24 POWER TRANSMISSION AND DISTRIBUTION↗