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At least 1,711 records · Page 95
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Catalytic reduction of carbon dioxide to methanol over defect-laden hexagonal boron nitride: insights into reaction mechanisms

Abstract We present a density functional theory-based mechanistic understanding of CO 2 hydrogenation to value-added products on a nitrogen-vacancy (V N ) defect in hexagonal boron nitride ( dh -BN). Activation occurs through back-donation to the π * orbitals of CO 2 from the frontier orbitals (defect state) of the h- BN sheet that are localized near a nitrogen-vacancy. Subsequent hydrogenation to methanol (CH 3 OH) and formic acid (HCOOH) proceed through vacancy-facilitated co-adsorption of hydrogen and CO 2 . More importantly, our reaction pathway analyses complimented by microkinetic modeling indicate that dh -BN is potentially a low-temperature, selective catalyst for CO 2 reduction to methanol. Our findings are in agreement with experiments conducted in a mechanical reactor that show high selectivity towards methanol formation for CO 2 hydrogenation on defect induced h- BN.

Jiang, Tao (ORCID:0000000304197288)↗
DOE OSTI2024

Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

Abstract In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.

Engineering↗
DOE OSTI2026

Silicon pinhole strip defects and their impact on ATLAS Inner Tracker HV current measurement

In preparation for the High-Luminsity LHC (HL-LHC) [1], the ATLAS detector will undergo major detector upgrades, including the replacement of the current Inner Detector with the new all-silicon Inner Tracker (ITk) [2]. The ITk consists of a pixel detector close to the beamline surrounded by a large-area strip detector. During detector production, the electrical properties of silicon sensors and readout electronics must be characterized through a series of quality control (QC) and quality assurance tests. These tests ensure any defect is captured at the earliest possible stage. One such defect, callled a pinhole, occurs when the strip implant and the metal readout electrode are shorted through the intermediary dielectric layer. Notably, the introduction of pinholes during module assembly and pinhole effects on completed modules, especially on leakage current measurement circuitry, have never been studied. In this paper, we investigate the effect of such connections on the sensor leakage current measurements of completed modules and introduce new ways to locate pinholed strips. Here, with minor modifications to testing procedures, such defects are shown not to impede module testing or performance.

FOS: Physical sciences↗
DOE OSTI2023

In-Situ Transmission Electron Microscopy Study of the Evolution of Extended Defects in Oxide Nuclear Fuels

In-situ transmission electron microscopy (TEM) with simulated extreme environments is an effective tool for understanding and tracking microstructural changes down to the atomic scale. The objective of this research is to study the effect of temperature on the evolution of extended defects in ThO2 and UO2. Here, we present in-situ TEM isochronal thermal annealing experiments using a micro-electro-mechanical-system (MEMS)-based heating holder. ThO2 and UO2 single crystal specimens were grown inside an inert silver ampoule using hydrothermal synthesis. Both samples were irradiated using 2 MeV protons at 600oC up to 0.1 dpa at Texas A&M University’s Accelerator Laboratory. Fig. 1a shows a weak-beam dark field TEM image of ThO2 after irradiation, indicating the presence of faulted 1/3 <111> type dislocation loops. This presentation will discuss the effect of annealing temperature (600oC, 800oC, 1000oC, 1100oC, etc.) on dislocation loop density, size and distribution, loop nature (interstitial/vacancies) and Burgers vector, as well as the formation of voids in both ThO2 and UO2. This work will also discuss the interaction between defects during annealing. The in-situ TEM annealing cycle is shown in Fig 1b. This research significantly improves the understanding of defect behavior in oxide nuclear fuels with temperature and will aid computational modeling efforts. This work was supported as part of the Center for Thermal Energy Transport under Irradiation (TETI) Energy Frontier Research Center, funded by the U.S. Department of Energy Office of Science.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Resonant and bound states of charged defects in two-dimensional semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS 2 using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Dynamical defects in a two-dimensional Wigner crystal: Self-doping and kinetic magnetism

We study the quantum dynamics of interstitials and vacancies in a two-dimensional Wigner crystal (WC) using a semi-classical instanton method that is asymptotically exact at low density, i.e., in the r s → ∞ limit. Here, the dynamics of these point defects mediates magnetism with much higher energy scales than the exchange energies of the pure WC. Via exact diagonalization of the derived effective Hamiltonians in the single-defect sectors, we find the dynamical corrections to the defect energies. The resulting expression for the interstitial (vacancy) energy extrapolates to 0 at r s = r mit ≈ 70 (r s ≈ 30), suggestive of a self-doping instability to a partially melted WC for some range of r s below r mit . We thus propose a “metallic electron crystal” phase of the two-dimensional electron gas at intermediate densities between a low density insulating WC and a high density Fermi fluid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case in CdTe

Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser. For Cd and Cu, because the defect state is the non-degenerated slike state under T d symmetry, the diffusions are almost along the [111] directions between the tetrahedral sites, although the diffusion of Cu shows some deviation due to the s - d coupling. The diffusions of the neutral and charged Cd and Cu follow similar paths. However, for Te and Cl atoms, because the defect state is the degenerated p-like state under T d symmetry, large distortions occur. Therefore, the diffusion paths are very different from those of Cd and Cu interstitials, and depend strongly on the charge states of the interstitial atoms. For Te, we find that the distortion is mostly stabilized by the crystal-field splitting, but for Cl, the exchange splitting plays a more important role.

14 SOLAR ENERGY↗
DOE OSTI2018

Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Here, we have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Nanoparticle localization within chiral liquid crystal defect lines and nanoparticle interactions

Self-assembly of colloidal particles into predefined structures is a promising way to design inexpensive manmade materials with advanced macroscopic properties. Doping of nematic liquid crystals (LCs) with nanoparticles has a series of advantages in addressing these grand scientific and engineering challenges. It also provides a very rich soft matter platform for the discovery of unique condensed matter phases. The LC host naturally allows the realization of diverse anisotropic interparticle interactions, enriched by the spontaneous alignment of anisotropic particles due to the boundary conditions of the LC director. Here we demonstrate theoretically and experimentally that the ability of LC media to host topological defect lines can be used as a tool to probe the behavior of individual nanoparticles as well as effective interactions between them. LC defect lines irreversibly trap nanoparticles enabling controlled particle movement along the defect line with the use of a laser tweezer. Minimization of Landau–de Gennes free energy reveals a sensitivity of the ensuing effective nanoparticle interaction to the shape of the particle, surface anchoring strength, and temperature, which determine not only the strength of the interaction but also its repulsive or attractive character. Theoretical results are supported qualitatively by experimental observations. Furthermore, this work may pave the way toward designing controlled linear assemblies as well as one-dimensional crystals of nanoparticles such as gold nanorods or quantum dots with tunable interparticle spacing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

How relative defect migration energies drive contrasting temperature-dependent microstructural evolution in irradiated ceramics

Ceramic materials have become widely used in various fields of material science, and ceramic oxides such as cubic zirconia (c- ZrO 2 ) and magnesia (MgO) are candidate materials for nuclear energy applications. For the corresponding in-service conditions of these materials, there is a crucial need in studies at moderate or high temperatures of the physical phenomena underlying the damage buildup under irradiation. Here in the present work, we show, using x-ray diffraction, that these two materials exhibit a similar damage accumulation process under ion irradiation at fixed temperature. However, they display an unexpected opposite damaging rate to changes in the irradiation temperature. In fact, as the temperature is increased, the final damage state is reached earlier in c- ZrO 2 while it is delayed in MgO. Rate equation cluster dynamics simulations show that defect clustering is favored over defect recombination in c- ZrO 2 , but the situation is reversed for MgO, explaining the observed opposite response to temperature of the two materials. This contrasting behavior can be rationalized in terms of nonequivalent interstitial versus vacancy defect migration energies in MgO. We finally demonstrate that these results allow for a qualitative prediction of the evolution of the experimental irradiation-induced disorder with temperature, henceforth potentially reducing the cost in selecting and developing ad hoc materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Defect-induced magnetism and Yu-Shiba-Rusinov states in twisted bilayer graphene

Atomic defects have a significant impact on the low-energy properties of graphene systems. By means of first-principles calculations and tight-binding models we provide evidence that chemical impurities modify both the normal and the superconducting states of twisted bilayer graphene. Here, a single hydrogen atom attached to the bilayer surface yields a triple-point crossing, whereas self-doping and threefold symmetry breaking are created by a vacant site. Both types of defects lead to time-reversal symmetry breaking and the creation of local magnetic moments. Hydrogen-induced magnetism is found to exist also at the doping levels where superconductivity appears in magic-angle graphene superlattices. As a result, the coexistence of superconducting order and defect-induced magnetism yields in-gap Yu-Shiba-Rusinov excitations in magic-angle twisted bilayer graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Influence of crystalline order and defects on the absolute work functions and electron affinities of TiO2- and SrO-terminated n-SrTiO3(001)

We establish how the detailed structure and composition of the terminal layer of n-SrTiO3 (001) determine key surface electronic properties. We have measured and calculated from first principles the absolute work functions and electron affinities of bulk SrNb0.01Ti0.99O3(001) with both TiO2 and nominally SrO terminal planes. The match between theory and experiment is excellent at 4.6(1) eV for the TiO2 termination if an ideal, bulk-truncated surface structure is assumed. In contrast, the ideal SrO-termination leads to a calculated work function that is ~1.3 eV lower than the experimental value of 3.6(1) eV. We show that this discrepancy is associated with defects on the SrO surface that serve as electron scavengers. These defects deplete the concentration of itinerant electrons in the subsurface region and increase the negative charge density on the surface, thus increasing the work function. Several different surface defect configurations were modeled; the ones that yield the best agreement with experiment involve Sr vacancies in the terminal layer along with OH–/H– pairs or O22– occupying anion sites adjacent to the Sr vacancies.

Chambers, Scott A.↗
DOE OSTI2021

Interplay between defect transport and cation spin frustration in corundum-structured oxides

Despite the fundamental importance of mass transport, there is still a lack of knowledge regarding the mechanisms in many materials. In particular, how the magnetic spin structure interacts with migrating defects is unclear. In this work, using density functional theory to examine cation interstitial transport in antiferromagnetic corundum-structured oxides, we reveal an interplay between the migration of the interstitial and the magnetic structure of the oxide. The magnetic spin configuration impacts the migration energy of the migrating defect but, critically, the defect modifies the spin configuration. Thus, the two aspects change in concert to modify one another. This has profound implications for mass transport in magnetic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Role of structural defects in mediating disordering processes at irradiated epitaxial Fe 3 O 4 / Cr 2 O 3 interfaces

Disordering processes in oxide materials are complicated by the presence of interfaces, which can serve as either point defect sinks or accumulation sites; the response depends on factors such as interfacial structure, chemistry, and termination. Here, we have characterized the disordering of epitaxial Fe 3 O 4 (111) / Cr 2 O 3 (0001) thin film heterostructures after 400 keV Ar 2+ radiation at room temperature. The density of misfit dislocations in both the Fe 3 O 4 overlayer and Cr 2 O 3 buffer layer is varied by changing the thickness of Cr 2 O 3 to be pseudomorphically strained to the Al 2 O 3 (0001) substrate (5 nm thick) or partially relaxed (20 nm thick), as confirmed by Bragg filtering analysis of scanning transmission electron microscopy images. In both cases, irradiation leads to damage accumulation on the Fe 3 O 4 side of the heterointerface, as shown by Rutherford backscattering spectrometry measurements in the channeling geometry. However, the interface with more misfit dislocations exhibits disordering at a faster rate than the less-defective interface. Likewise, layer-resolved electron energy loss spectroscopy reveals interfacial reduction of Fe after irradiation at the more defective interface. Intermixing of Cr across the interface is observed by atom probe tomography, which is likely facilitated by the generation of Cr interstitials in Cr 2 O 3 under irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Mixture-of-Experts for Multi-Domain Defect Identification in Non-Destructive Inspection

Composite materials are widely used in aircraft structures because of their superior mechanical properties. However, their complex failure modes require sophisticated inspection methods to ensure structural integrity. Ultrasonic testing (UT) is a common non-destructive inspection (NDI) technique for aircraft composites that can detect internal and external defects with high resolution and accuracy. Despite their effectiveness, traditional UT methods rely on the manual interpretation of ultrasonic signals, which is time-consuming, labor-intensive, and subjective. Furthermore, processing such large-scale data, particularly across materials of varying thicknesses, significantly increases the computational demands of deep learning model optimization. To overcome these challenges, we propose an efficient sparse mixture-of-experts (MoE) model with a multi-level loss function and introduce four novel training objectives to improve computational efficiency and accuracy in identifying surface defects in composite aircraft materials. Here, we evaluated our approach on material with multiple thicknesses or domains comprising various defects. Our experimental results demonstrate higher accuracy and F1-Score, with only 10% training epochs compared to baseline MoE.

composite materials↗
DOE OSTI2015

Calculation of Defect Concentrations and Phase Stability in Cu$_2$ ZnSnS$_4$ and Cu$_2$ ZnSnSe$_4$ From Stoichiometry

The application of the quarternary compounds Cu$_2$ ZnSnS$_4$(CZTS) and Cu$_2$ ZnSnSe$_4$(CZTSe) as efficient solar cell absorber materials is dependent on the complex behavior of the large variety of intrinsic lattice defects. In this paper, a canonical approach is presented and applied to calculate the defect concentrations and the position of the Fermi level for CZTS and CZTSe at a given temperature as a function of stoichiometry (or a combination of stoichiometry and elemental chemical potentials). With the defect concentrations, the chemical potentials (which are generally not experimentally accessible) can be calculated, allowing the relation of sample composition to the phase stability of CZTS and CZTSe with respect to secondary compounds. Based on the model, it is shown that the stable CZTS with off-stoichiometric composition requires both Cu-poor and Zn-rich conditions, while the compositional space corresponding to stable CZTSe is wider than for CZTS. Additionally, the determination of the Fermi level directly relates the desired p-type conductivity to phase stability in both materials. The method used in this study is applicable to a wide range of complex materials.

14 SOLAR ENERGY↗
DOE OSTI2025

Sequential Stress Identifies Processing Defects in Bifacial Photovoltaic Modules That Limit Durability

Here, we use sequential stress to investigate hurdles to bifacial photovoltaic (PV) module durability from lamination defects. We test mini-modules with glass/glass (G/G) and glass/transparent-backsheet (G/TB) constructions using either ethylene vinyl acetate or polyolefin elastomer (POE) based encapsulants under a modified IEC 63209-2 sequential stress. This sequence includes multiple iterations of damp heat (DH200), full spectrum light exposure (A3), thermal cycling (TC50), and humidity/freeze (HF10). We compare indoor stress with outdoor exposure. Results show similar relative trends in degradation after a year outdoors compared to our first stress cycle. Subsequent stress cycles impart more severe damage than outdoor exposure for the short outdoor duration used here. Edge-pinch lamination defects in G/G mini-modules limit durability causing delamination and cell cracks. Conversely, we observe greater degradation in G/TB mini-modules compared to G/G in the later stages of the stress sequence when the backsheets are directly exposed to UV-containing light. Our results highlight: 1) the utility of sequential stress testing to uncover degradation modes in bifacial PV, 2) implications of using mini-modules for testing PV quality, and 3) the importance of lamination defects that must be avoided to ensure durability as the industry adopts G/G or G/TB packaging.

14 SOLAR ENERGY↗