Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ThIn”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,711 records · Page 95

MultiLayer solid electrolyte for lithium thin film batteries

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

25 ENERGY STORAGE↗

GaAs thin films and methods of making and using the same

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

30 DIRECT ENERGY CONVERSION↗

TUNING THE MAGNETOELECTRIC PROPERTIES WITH STRAIN IN EPITAXIAL CO0.9SN0.1FE2O4 THIN FILMS

We have grown epitaxial Sn substituted cobalt ferrite thin films of various thicknesses on piezoelectric Pb(Mg1/3Nb2/(3))(0.72)Ti0.28O3 substrates and investigated the strain-induced changes of magnetic properties. All films described in this work have been deposited by pulsed laser deposition (PLD) from stoichiometric target of Co0.9Sn0.1Fe2O4. The lattice structure, crystallinity and orientation of the thin films were determined by X-ray diffraction analysis. The magnetization of thin films was measured for both, in-plane and out-of-plane configurations, using a superconductor quantum interference device (SQUID) magnetometer at 300 K. The measurements reveal that the magnetic anisotropy is altered by the strain imposed from the substrate upon application of an electric field. The magnetoelastic coupling is demonstrated by a change of the remanent magnetisation. However, we find that this strain effect is thickness dependent. The biggest strain effect is recorded for the thickest film (400nm) where an electric-field-controlled contraction of the substrate of 0.1% induces a relative change in magnetic moment of 9.3%. The relative change of the remanent magnetisation is reduced with decreasing film thickness and is smaller than 3% for the thinnest film (25nm).

epitaxy↗

Nickel-cobalt-titanate thin films - new sustainable magnetic oxides

Single phase nickel-cobalt-titanate (NCT) thin films with a formula A 1+2x Ti 1-x O 3 , where A is Ni 2+ , Co 2+ and -0.25 < x < 1, were grown by pulsed laser deposition on sapphire substrates. In Ti-poor region a thin film crystal structure not stable in bulk form was prepared. The structure is not stable in bulk form and is obtained by filling octahedra vacant in the corundum and ilmenite structures. When x = 1 all vacant sites are filled. A direct overlap between the adjacent cation d-orbitals result in a bond formation and magnetic interactions between the cations. This serves as a route to tailor functional properties. NCT-based materials are non-toxic and cheap, stable in the air, have tunable composition, and are producible in a sustainable manner. Here we report the structural properties of thin films as a function of Ti/(Ni+Co) ratio.

36 MATERIALS SCIENCE↗

Rapid fabrication of hierarchically structured supramolecular nanocomposite thin films in one minute

Functional nanocomposites containing nanoparticles of different chemical compositions may exhibit new properties to meet demands for advanced technology. It is imperative to simultaneously achieve hierarchical structural control and to develop rapid, scalable fabrication to minimize degradation of nanoparticle properties and for compatibility with nanomanufacturing. The assembly kinetics of supramolecular nanocomposite in thin films is governed by the energetic cost arising from defects, the chain mobility, and the activation energy for inter-domain diffusion. By optimizing only one parameter, the solvent fraction in the film, the assembly kinetics can be precisely tailored to produce hierarchically structured thin films of supramolecular nanocomposites in approximately one minute. Moreover, the strong wavelength dependent optical anisotropy in the nanocomposite highlights their potential applications for light manipulation and information transmission. The present invention opens a new avenue in designing manufacture-friendly continuous processing for the fabrication of functional nanocomposite thin films.

36 MATERIALS SCIENCE↗

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

36 MATERIALS SCIENCE↗

Ultra-thin plasma panel radiation detector

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

47 OTHER INSTRUMENTATION↗

Methods of forming colloidal nanocrystal-based thin film devices

Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

36 MATERIALS SCIENCE↗

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗

Comparative Techno-Economic Analysis of Available Feedstocks for High-Temperature Conversion: Whole Tree Thinnings and Mature Pine Residues

The techno-economic and life cycle implications of utilizing low-cost feedstocks in a high temperature conversion process are of great interest. Here, we investigate the conversion cost impacts of two underutilized feedstocks from the commercial pine industry: 13-year-old whole trees, representing trees removed for the purpose of precommercial thinning, and 23-year-old pine residues, representing a waste stream produced from the deconstruction of mature trees for other purposes. Experimental fast pyrolysis (FP) yields for each feedstock were adjusted to a catalytic fast pyrolysis (CFP) basis and used to estimate process economics by employing published correlations based on rigorous techno-economic modeling. These correlations were used in tandem with results from supply and preprocessing analyses to evaluate the field-to-fuel economics of each feedstock. A small difference in minimum fuel selling price (MFSP) was found between the conversion costs for the two feedstocks, with 23-year-old residues demonstrating a net benefit of $0.27 per gasoline gallon equivalent (GGE) compared to the 13- year-old whole tree thinnings, driven primarily by feedstock supply costs. This suggests that both whole tree thinnings and pine residues may be viable feedstock options for CFP conversion. Life cycle inventories (LCIs) were also generated for each case, enabling a field-to-fuel quantification of the cost and carbon cycle associated with each feedstock.

catalytic fast pyrolysis↗

Thin-film catalyst with enhanced catalyst-support interactions

An efficient, stable catalyst material having a thin film catalyst supported on a support of metal carbide, nitride, oxide, carbonitride, oxycarbonitride core. The thin film catalyst comprises a catalytic metal selected from the group consisting of platinum-group metals, platinum-group metal oxides, transition metals, transition metal oxides, and combinations thereof. The thin film catalyst is covalently bonded to the support.

Shirvanian, Alizera Pezhman↗

A practical guide to quartz crystal microbalance with dissipation monitoring of thin polymer films

Quartz crystal microbalance with dissipation (QCM-D) monitoring is a powerful tool used to sensitively examine the real-time responses of polymer films to external responses. For example, the technique is commonly used to monitor film growth, material adsorption, thin film swelling, and ion exchange. With its rapidly expanding use, this review is intended to introduce new users to the basic principles of QCM-D, along with practical challenges and remedies specific to polymer thin films. For both new and experienced users, specific case studies are highlighted including layer-by-layer assembly, electrochemical QCM-D, swelling, sensing, and biological application. Finally, the review recommends future directions for research and areas of growth.

36 MATERIALS SCIENCE↗

The fabrication of nanoscale Bi 2 Te 3 /Sb 2 Te 3 multilayer thin film-based thermoelectric power chips

In this work, we report our method of fabricating nanoscale multilayered Bi 2 Te 3 /Sb 2 Te 3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi 2 Te 3 /Sb 2 Te 3 thin film was grown via e-beam evaporation; it had 20 alternating Bi 2 Te 3 - and Sb 2 Te 3 -layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi 2 Te 3 /Sb 2 Te 3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV and a maximum power of 21 nW were produced from this 30 nm-thick Bi 2 Te 3 /Sb 2 Te 3 multilayer TE device. We found that the nanoscale multilayer structure significantly affects the voltage and power produced. Lastly, the fabrication of the integrated thermoelectric devices is compatible to that of generating standard integrated circuits (ICs), and is scalable for producing higher voltage and power, or achieving solid-state cooling for on-chip applications.

36 MATERIALS SCIENCE↗

Electrochemistry-Induced Direct Deposition of Nanoscale Thin Zeolitic Imidazolate Framework-8 Films on Insulator Substrates

Electrochemical approaches have been explored as controlled means to prepare thin films of metal–organic frameworks (MOFs) on electrodes but have rarely been used to form insulator films on insulator surfaces. Herein, we report an electrochemistry-based approach to direct deposition of a thin film of zeolitic imidazolate framework-8 (ZIF-8) onto an insulator surface. The film deposition was induced by a cathodic reaction at an electrode that was placed above the insulator with a separation of ≈100 μm in a methanol solution containing ZnCl 2 and 2-methylimidizole. The effects of the electrode and insulator material, applied potential, electrode–substrate distance, deposition time, and the number of deposition cycles were systematically investigated to gain insight into the deposition mechanism. The results of these measurements were consistent with a hypothesized mechanism involving cathodic base generation at the working electrode for ligand deprotonation, formation of intermediate species, their diffusion toward the substrate, and the formation of ZIF-8 on the substrate. Interestingly, the size, shape, and position of the film on the substrate replicated those of the working electrode, showing the applicability of this approach to the patterned deposition of a ZIF-8 film. In addition, film thickness could be easily controlled in the range of tens to hundreds of nanometers by adjusting the potential application conditions. Furthermore, this electrochemistry-induced method will provide a simple means for the patterned formation of a MOF film of controlled thickness on an insulator without metal precoating and thus will open the possibility of designing unique devices for various applications including chemical sensing and separations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing

Amorphous In-Zn-O (a-IZO) thin films are among the most promising transparent conducting materials. Applications of a-IZO include thin film transistors for display technology and photovoltaic devices. However, the use of this material in practical devices has been impeded by limitations in our understanding of the relationship between a-IZO film structure and electrical properties. Here, we use in situ X-ray reflectivity to provide experimental evidence for a vertically heterogeneous, thermally induced structural relaxation that had been predicted for amorphous oxide films but not previously observed. The structural relaxation is shown to be dependent on the thermal annealing environment. Complementary in situ current-voltage curves and ex situ Van der Pauw measurements further show that thermal annealing also influences the electrical performance of the films. Here our results suggest that both oxygen uptake and structural relaxation contribute to the reduction in free carriers within a-IZO films during postdeposition processing. The structural heterogeneity and loss of carriers that occur during thermal annealing are only partly reversible. We anticipate that this insight into the structure-processing-property relationships within a-IZO will help to enable a-IZO-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Evidence for In-Plane Electrical Polarization in 3R-β’-In 2 Se 3 Thin Films Grown by Molecular Beam Epitaxy

β-In 2 Se 3 has been identified as a potential ferroelectric. This work describes the growth of β-In 2 Se 3 via molecular beam epitaxy along with a description of its properties, including the search for switchable polarization in 3R-β’-In2Se3. The thin-film morphology, crystal structure, and phase maps of β-In 2 Se 3 on Si(111) and Al 2 O 3 (0001) were evaluated by atomic force microscopy, X-ray diffraction, and Raman spectroscopy as a function of the atomic Se/In flux ratio and growth temperature. Smooth β-In 2 Se 3 thin films were successfully realized on Si(111) at a substrate temperature of 150 °C using a Se/In flux ratio of 5.7, as well as on Al 2 O 3 (0001) at 450 °C using a Se/In flux ratio of 5.5. Scanning transmission electron microscopy (STEM) confirms the 3R polytype of β-In 2 Se 3 in films on both substrates, with a minor disorder associated with the 2H polytype at the interface. Indications of in-plane Se atom displacements characteristic of the 3R-β’-In 2 Se 3 polytype were found by STEM and second harmonic generation analysis in films on Al 2 O 3 (0001), but not in films on Si(111). Furthermore, attempts at electrical polarization switching did not produce compelling evidence for ferroelectricity. Instead, electrical transport measurements demonstrated locally varying anisotropic responses with the applied electric fields along different in-plane directions, with some hysteresis associated with the trapping of charges.

36 MATERIALS SCIENCE↗

Re-entrant unconventional superconductivity induced by rare-earth substitution in Nd 1-x Eu x NiO 2 thin films

High temperature superconductivity is typically associated with strong coupling and a large superconducting gap, yet these characteristics have not been demonstrated in the nickelates. Here, we provide experimental evidence that Eu substitution in the spacer layer of Nd 1-x Eu x NiO 2 (NENO) thin films enhances the superconducting gap, driving the system toward a strong-coupling regime. This is accompanied by a magnetic-exchange-driven magnetic-field-enhanced superconductivity. We investigate the upper critical magnetic field, H c2 , and the superconducting gap of superconducting NENO thin films with x = 0.2 to 0.35. Magnetoresistance measurements reveal magnetic-field-enhanced superconductivity in NENO films. We interpret this phenomenon as a result of an interaction between magnetic Eu ions and superconducting states in the Ni d x2-y2 orbital. The upper critical magnetic field strongly violates the weak-coupling Pauli limit. Infrared spectroscopy confirms a large gap-to-Tc ratio $2\Delta /{k}_{B}{T}_{{\rm{c}}}\simeq 5-6$, indicating a stronger coupling pairing mechanism in NENO relative to the Sr-doped NdNiO 2 . The substitution of Eu in the rare-earth layer causes pronounced modifications of the superconducting gap and magnetic interactions in Nd-based nickelates, opening new pathways to engineer high- T c superconductivity in infinite-layer nickelates.

36 MATERIALS SCIENCE↗