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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,711 records · Page 95
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Fano resonance control in a photonic crystal structure and its application to ultrafast switching

We experimentally demonstrate a photonic crystal structure that allows easy and robust control of the Fano spectrum. Its operation relies on controlling the amplitude of light propagating along one of the light paths in the structure from which the Fano resonance is obtained. Short-pulse dynamic measurements show that besides drastically increasing the switching contrast, the transmission dynamics itself is strongly affected by the nature of the resonance. The influence of slow-recovery tails implied by a long carrier lifetime can thus be reduced using a Fano resonance due to a hitherto unrecognized reshaping effect of the nonlinear Fano transfer function. As an example, we present a system application of a Fano structure, demonstrating its advantages by the experimental realization of 10 Gbit/s all-optical modulation with optical control power less than 1 mW.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

A spin specific magnetic hysteresis (SSMH) curve and an orbital specific magnetic hysteresis (OSMH) curve are obtained for Fe/Au/Fe/MgO multilayers by magnetic Compton scattering and SQUID magnetometer measurements. The SSMH curve with each contribution of magnetic quantum number |m| = 0, 1, and 2 states is obtained by decomposition analyses of magnetic Compton profiles. Residual magnetization is observed for the SSMH curve with magnetic quantum number |m| = 0, 2 and the OSMH curve. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the present Fe/Au/Fe/MgO multilayer film, the SSMH curve with magnetic quantum number |m| = 0, 2 and OSMH curve show switching behaviors of PMA.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Elastomeric organic material for switching application

Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Cavity-photon-switched coherent transient transport in a double quantum waveguide

We study a cavity-photon-switched coherent electron transport in a symmetric double quantum waveguide. The waveguide system is weakly connected to two electron reservoirs, but strongly coupled to a single quantized photon cavity mode. A coupling window is placed between the waveguides to allow electron interference or inter-waveguide transport. The transient electron transport in the system is investigated using a quantum master equation. We present a cavity-photon tunable semiconductor quantum waveguide implementation of an inverter quantum gate, in which the output of the waveguide system may be selected via the selection of an appropriate photon number or “photon frequency” of the cavity. In addition, the importance of the photon polarization in the cavity, that is, either parallel or perpendicular to the direction of electron propagation in the waveguide system is demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Multitasking information behavior, information task switching and anxiety: An exploratory study

Multitasking information behavior involves multiple forms of information searching such as library and Web search. Few researchers, however, have explored multitasking information behavior and information task switching in libraries in conjunction with psychological variables. This study explored this behavior in terms of anxiety under time pressure. This was an exploratory case study. Participant searched information for three unrelated everyday life information topics during a library visit, in a timeframe of one hour. The data collection tools used were: diary, observation, interview, and the State-Trait Anxiety Inventory test. Participant took the Trait-anxiety test before the library visit to measure anxiety level as a personal characteristic. She also took State-anxiety test before, during and after the library visit to measure anxiety levels regarding the information seeking behavior. The results suggested that participant had high levels of anxiety at the beginning of the multitasking information behavior. The reason for that was the concern about the performance as well as the identification of the right resources. During the multitasking information behavior, participant still had anxiety to find the right information. The levels of anxiety, however, were less due to library’s good organized structure. At the end of the information seeking process, the levels of anxiety dropped significant and therefore calm and safety returned. Finally, participant searched information for topics that were more important and for which she had prior knowledge When people, under time pressure, have access to well organized information, the levels of anxiety might decrease.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2015

Resistive switching properties in CdZnTe films

The ternary II–VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Neural coding using telegraphic switching of magnetic tunnel junction

In this work, we present a synaptic transmission representing neural coding with spike trains by using a magnetic tunnel junction (MTJ). Telegraphic switching generates an artificial neural signal with both the applied magnetic field and the spin-transfer torque that act as conflicting inputs for modulating the number of spikes in spike trains. The spiking probability is observed to be weighted with modulation between 27.6% and 99.8% by varying the amplitude of the voltage input or the external magnetic field. With a combination of the reverse coding scheme and the synaptic characteristic of MTJ, an artificial function for the synaptic transmission is achieved.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Switching time in laser pulse heat-assisted magnetic recording using L1{sub 0}-FePt nanoparticles

Atomistic spin model simulations using Langevin dynamics are performed to study the factors that determine the thermomagnetic recording time window in FePt media. The onset of thermomagnetic writing occurs at a temperature T{sub o} larger than the Curie temperature T{sub c} as a result of the finite time of relaxation of the magnetization by the linear reversal mode. The Bloch relaxation rate of magnetization growth during cooling below T{sub c} is independent on the write field, provided the field is stronger than some threshold value. Application of a strong write field reduces switching time through better spin alignment in the paramagnetic regime. Finite size effects on the probability distribution of freezing temperatures T{sub f} and the free energy provide insight on the thermomagnetic reversal mechanism. Constraints on the “pulse-mode” of recording when the head field reverses direction during cooling are also considered.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe){sub 2}O{sub 3}/SrRuO{sub 3} heterostructures

Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga{sub 0.6}Fe{sub 1.4}O{sub 3} (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO{sub 3}(111)/SrTiO{sub 3}(111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 μC/cm{sup 2}. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO{sub 3} will pave a way to take advantage of the room-temperature non-zero multi-orders for future non-volatile memory device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Resistance switching in polyvinylidene fluoride (PVDF) thin films

Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Switching times of nanoscale FePt: Finite size effects on the linear reversal mechanism

The linear reversal mechanism in FePt grains ranging from 2.316 nm to 5.404 nm has been simulated using atomistic spin dynamics, parametrized from ab-initio calculations. The Curie temperature and the critical temperature (T{sup *}), at which the linear reversal mechanism occurs, are observed to decrease with system size whilst the temperature window T{sup *}<T<T{sub C} increases. The reversal paths close to the Curie temperature have been calculated, showing that for decreasing system size the reversal path becomes more elliptic at lower temperatures, consistent with the decrease in the Curie temperature arising from finite size effects. Calculations of the minimum pulse duration show faster switching in small grains and are qualitatively described by the Landau-Lifshitz-Bloch equation with finite size atomistic parameterization, which suggests that multiscale modeling of FePt down to a grain size of ≈3.5 nm is possible.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Oxygen vacancy induced magnetization switching in Fe{sub 3}O{sub 4} epitaxial ultrathin films on GaAs(100)

The magnetic and transport properties of half metallic Fe{sub 3}O{sub 4}, which are sensitive to the stoichiometry, are the key issue for applications in spintronics. An anomalous enlargement of the saturation magnetic moment is found in a relatively thick sample of epitaxial Fe{sub 3}O{sub 4} film by post-growth oxidation method. The investigation of the thickness dependence of magnetic moment suggests that the enhanced magnetism moment may come from the existence of oxygen vacancies. First-principles calculations reveal that with oxygen vacancies in Fe{sub 3}O{sub 4} crystal the spin of Fe ions in the tetrahedron site near the vacancy is much easier to switch parallel to the Fe ions in the octahedron site by temperature disturbance, supported by the temperature dependence of magnetic moment of Fe{sub 3}O{sub 4} films in experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗